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Wang F, Ma J, Duan D, Liang X, Zhou K, Sun Y, Wang T, Yang G, Pei G, Lin H, Shi Y, Zhu Q, Li G, Hu H. Tailoring Ionic Liquid Chemical Structure for Enhanced Interfacial Engineering in Two-Step Perovskite Photovoltaics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2307679. [PMID: 38054777 DOI: 10.1002/smll.202307679] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/03/2023] [Revised: 11/20/2023] [Indexed: 12/07/2023]
Abstract
Ionic liquids (ILs) have emerged as versatile tools for interfacial engineering in perovskite photovoltaics. Their multifaceted application targets defect mitigation at SnO2-perovskite interfaces, finely tuning energy level alignment, and enhancing charge transport, meanwhile suppressing non-radiative recombination. However, the diverse chemical structures of ILs present challenges in selecting suitable candidates for effective interfacial modification. This study adopted a systematic approach, manipulating IL chemical structures. Three ILs with distinct anions are introduced to modify perovskite/SnO2 interfaces to elevate the photovoltaic capabilities of perovskite devices. Specifically, ILs with different anions exhibited varied chemical interactions, leading to notable passivation effects, as confirmed by Density Functional Theory (DFT) calculation. A detailed analysis is also conducted on the relationship between the ILs' structure and regulation of energy level arrangement, work function, perovskite crystallization, interface stress, charge transfer, and device performance. By optimizing IL chemical structures and exploiting their multifunctional interface modification properties, the champion device achieved a PCE of 24.52% with attentional long-term stability. The study establishes a holistic link between IL structures and device performance, thereby promoting wider application of ILs in perovskite-based technologies.
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Affiliation(s)
- Fei Wang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, China
- Hoffmann Institute of Advanced Materials, Shenzhen Polytechnic, 7098 Liuxian Boulevard, Shenzhen, 518055, China
| | - Jing Ma
- Medical Intelligence and Innovation Academy, Southern University of Science and Technology Hospital, Shenzhen, 518055, China
| | - Dawei Duan
- Hoffmann Institute of Advanced Materials, Shenzhen Polytechnic, 7098 Liuxian Boulevard, Shenzhen, 518055, China
| | - Xiao Liang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, China
- Hoffmann Institute of Advanced Materials, Shenzhen Polytechnic, 7098 Liuxian Boulevard, Shenzhen, 518055, China
| | - Kang Zhou
- Hoffmann Institute of Advanced Materials, Shenzhen Polytechnic, 7098 Liuxian Boulevard, Shenzhen, 518055, China
| | - Yonggui Sun
- Hoffmann Institute of Advanced Materials, Shenzhen Polytechnic, 7098 Liuxian Boulevard, Shenzhen, 518055, China
| | - Taomiao Wang
- Hoffmann Institute of Advanced Materials, Shenzhen Polytechnic, 7098 Liuxian Boulevard, Shenzhen, 518055, China
| | - Guo Yang
- Hoffmann Institute of Advanced Materials, Shenzhen Polytechnic, 7098 Liuxian Boulevard, Shenzhen, 518055, China
| | - Guoxian Pei
- Medical Intelligence and Innovation Academy, Southern University of Science and Technology Hospital, Shenzhen, 518055, China
| | - Haoran Lin
- Hoffmann Institute of Advanced Materials, Shenzhen Polytechnic, 7098 Liuxian Boulevard, Shenzhen, 518055, China
| | - Yumeng Shi
- School of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Quanyao Zhu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, China
| | - Gang Li
- Department of Electronic and Information Engineering, Research Institute for Smart Energy (RISE), The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Guangdong, Shenzhen, 518057, China
| | - Hanlin Hu
- Hoffmann Institute of Advanced Materials, Shenzhen Polytechnic, 7098 Liuxian Boulevard, Shenzhen, 518055, China
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Wang H, Luo H, Yang L, Liu X, Li H, Liu S, Tang Y, Ye Z, Long W. Simultaneous Interfacial Defect Passivation and Bottom-Up Excess PbI 2 Management via Rubidium Chloride in Highly Efficient Perovskite Solar Cells with Suppressed Hysteresis. ACS APPLIED MATERIALS & INTERFACES 2024; 16:4854-4862. [PMID: 38252590 DOI: 10.1021/acsami.3c17743] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/24/2024]
Abstract
In halide perovskite solar cells (PSCs), moderate lead iodide (PbI2) can enhance device efficiency by providing some passivation effects, but extremely active PbI2 leads to the current density-voltage hysteresis effect and device instability. In addition, defects distributed on the buried interface of tin oxide (SnO2)/perovskite will lead to the photogenerated carrier recombination. Here, rubidium chloride (RbCl) is introduced at the buried SnO2/perovskite interface, which not only acts as an interfacial passivator to interact with the uncoordinated tin ions (Sn4+) and fill the oxygen vacancy on the SnO2 surface but also converts PbI2 into an inactive (PbI2)2RbCl compound to stabilize the perovskite phase via a bottom-up evolution effect. These synergistic effects deliver a champion PCE of 22.13% with suppressed hysteresis for the W RbCl PSCs, in combination with enhanced environmental and thermal stability. This work demonstrates that the interfacial defect passivation and bottom-up excess PbI2 management using RbCl modifiers are promising strategies to address the outstanding challenges associated with PSCs.
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Affiliation(s)
- Hanyu Wang
- School of New Energy and Materials, Southwest Petroleum University, Chengdu 610500, China
| | - Hu Luo
- School of New Energy and Materials, Southwest Petroleum University, Chengdu 610500, China
| | - Lang Yang
- School of New Energy and Materials, Southwest Petroleum University, Chengdu 610500, China
| | - Xingchong Liu
- School of New Energy and Materials, Southwest Petroleum University, Chengdu 610500, China
| | - Haimin Li
- School of New Energy and Materials, Southwest Petroleum University, Chengdu 610500, China
| | - Shuqian Liu
- School of New Energy and Materials, Southwest Petroleum University, Chengdu 610500, China
| | - Yanling Tang
- School of New Energy and Materials, Southwest Petroleum University, Chengdu 610500, China
| | - Zongbiao Ye
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China
| | - Wei Long
- Tongwei Solar Co., Ltd., Chengdu 610200, China
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Neupane GR, Thon SM, Fu S, Song Z, Yan Y, Hamadani BH. Intensity-Modulated Photocurrent Spectroscopy Measurements of High-Efficiency Perovskite Solar Cells. J Phys Chem Lett 2024; 15:290-297. [PMID: 38166413 DOI: 10.1021/acs.jpclett.3c03059] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/04/2024]
Abstract
Frequency domain characterization has long served as an important method for the examination of diverse kinetic processes that occur in solar cells. In this study, we investigated the dynamic response of high-efficiency perovskite solar cells utilizing ultra-low-intensity-modulated photocurrent spectroscopy. Distinctive intensity-modulated photocurrent spectroscopy (IMPS) attributes were detected only as a result of this low-intensity modulation, and their evolution under light and voltage bias was investigated in detail. We generally observed only two arcs in the Q-plane plots and attributed the smaller, low-frequency arc to trap-dominated charge transport in the device. Light and voltage bias-dependent measurements confirm this attribution. An equivalent circuit model was used to better understand the features and trends of these measurements and to validate our physical interpretation of the results. Additionally, we tracked the IMPS response of one of the cells over time and showed that slow degradation impacts the size and attributes of the low-frequency arc. Finally, we found that changes in the IMPS response correlate closely with the current versus voltage characteristics of the devices.
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Affiliation(s)
- Ganga R Neupane
- Engineering Laboratory, National Institute of Standards & Technology, Gaithersburg, Maryland 20899, United States
- Department of Electrical and Computer Engineering, Johns Hopkins University, Baltimore, Maryland 21218, United States
| | - Susanna M Thon
- Department of Electrical and Computer Engineering, Johns Hopkins University, Baltimore, Maryland 21218, United States
| | - Sheng Fu
- Department of Physics and Astronomy and Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo, Ohio 43606, United States
| | - Zhaoning Song
- Department of Physics and Astronomy and Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo, Ohio 43606, United States
| | - Yanfa Yan
- Department of Physics and Astronomy and Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo, Ohio 43606, United States
| | - Behrang H Hamadani
- Engineering Laboratory, National Institute of Standards & Technology, Gaithersburg, Maryland 20899, United States
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Duan H, Lin Z, Xu X, Song Q, Dong H, Gao X, Mu C, Ouyang X. Highly Stable Perovskite Solar Cells Based on the Efficient Interaction between Pb 2+ and Cyano Groups of 4-Aminophthalonitrile. Chemistry 2023; 29:e202302703. [PMID: 37857570 DOI: 10.1002/chem.202302703] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/18/2023] [Revised: 10/18/2023] [Accepted: 10/19/2023] [Indexed: 10/21/2023]
Abstract
Defects present on the top surface of perovskite films have a pronounced detrimental impact on the photovoltaic performance and stability of perovskite solar cells (PSCs). Consequently, the development of effective defect passivation strategies has become key in enhancing both the power conversion efficiency (PCE) and stability of PSCs. In this study, a small molecule material, 4-Aminophthalonitrile (4-APN), was introduced as a means to mitigate surface defects within perovskite films. Obviously, 4-APN effectively passivates the defects at grain boundaries by combining cyano groups (-C≡N) with Pb2+ , significantly reducing the density of defect states, inhibiting non-radiative recombination at the interface, and promoting the charge transfer efficiency from the perovskite layer to the hole transport layer. The 4-APN modification led to a significant upswing in the PCE, while concurrently bolstering the overall device stability. Importantly, the devices on 4-APN as passivation additive exhibited negligible performance degradation aging for 1200 h.
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Affiliation(s)
- Hairui Duan
- Key Laboratory of Advanced Light Conversion Materials and Biophotonics, Department of Chemistry, Renmin University of China, Beijing, 100872, P. R. China
| | - Zhichao Lin
- Key Laboratory of Advanced Light Conversion Materials and Biophotonics, Department of Chemistry, Renmin University of China, Beijing, 100872, P. R. China
- Fujian Agriculture and Forestry University, Fuzhou, Fujian, 350002, P. R. China
| | - Xiangning Xu
- Key Laboratory of Advanced Light Conversion Materials and Biophotonics, Department of Chemistry, Renmin University of China, Beijing, 100872, P. R. China
| | - Qili Song
- Key Laboratory of Advanced Light Conversion Materials and Biophotonics, Department of Chemistry, Renmin University of China, Beijing, 100872, P. R. China
| | - Hongye Dong
- Key Laboratory of Advanced Light Conversion Materials and Biophotonics, Department of Chemistry, Renmin University of China, Beijing, 100872, P. R. China
| | - Xiaowen Gao
- Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Cheng Mu
- Key Laboratory of Advanced Light Conversion Materials and Biophotonics, Department of Chemistry, Renmin University of China, Beijing, 100872, P. R. China
| | - Xinhua Ouyang
- Fujian Agriculture and Forestry University, Fuzhou, Fujian, 350002, P. R. China
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Song Q, Li Y, Lin Z, Xu X, Dong H, Duan H, Guan L, Gao X, Ai XC, Mu C. High-Fill-Factor Perovskite Solar Cells via Pseudohalide Salt Modification of the Substrate to Mitigate Nonradiative Recombination at the Interface. J Phys Chem Lett 2023; 14:9951-9959. [PMID: 37905503 DOI: 10.1021/acs.jpclett.3c02633] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/02/2023]
Abstract
The utilization of the sol-gel method for fabricating planar SnO2 as the electron transport layer (ETL) induces numerous defects on the SnO2 layer surface and perovskite film bottom, causing considerable deterioration of the device performance. Conventional inorganic salt-doped SnO2 precursor solutions used for passivation may cause incomplete substrate coverage due to the presence of inorganic salt crystals, further degrading the device performance. Here, a substrate modification approach involving the pretreatment of a fluorine-doped SnO2 (FTO) substrate with NH4PF6 is proposed. The interaction between PF6- ions and the FTO substrate enhances SnO2 film quality; excess PF6- ions decrease the number of defects on the film surface. NH4+ ions react with an -OH stabilizing agent in the SnO2 solution and are eliminated during annealing. The combined effects suppress nonradiative recombination and ion migration at the ETL-perovskite interface. The corresponding high-quality perovskite solar cells (PSCs) exhibit a fill factor of ∼0.825; PSC efficiency increases from 19.59% to 22.32%.
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Affiliation(s)
- Qili Song
- Key Laboratory of Advanced Light Conversion Materials and Biophotonics, Department of Chemistry, Renmin University of China, Beijing 100872, P. R. China
| | - Yiyi Li
- Key Laboratory of Advanced Light Conversion Materials and Biophotonics, Department of Chemistry, Renmin University of China, Beijing 100872, P. R. China
| | - Zhichao Lin
- Key Laboratory of Advanced Light Conversion Materials and Biophotonics, Department of Chemistry, Renmin University of China, Beijing 100872, P. R. China
| | - Xiangning Xu
- Key Laboratory of Advanced Light Conversion Materials and Biophotonics, Department of Chemistry, Renmin University of China, Beijing 100872, P. R. China
| | - Hongye Dong
- Key Laboratory of Advanced Light Conversion Materials and Biophotonics, Department of Chemistry, Renmin University of China, Beijing 100872, P. R. China
| | - Hairui Duan
- Key Laboratory of Advanced Light Conversion Materials and Biophotonics, Department of Chemistry, Renmin University of China, Beijing 100872, P. R. China
| | - Li Guan
- Key Laboratory of Advanced Light Conversion Materials and Biophotonics, Department of Chemistry, Renmin University of China, Beijing 100872, P. R. China
| | - Xiaowen Gao
- Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
| | - Xi-Cheng Ai
- Key Laboratory of Advanced Light Conversion Materials and Biophotonics, Department of Chemistry, Renmin University of China, Beijing 100872, P. R. China
| | - Cheng Mu
- Key Laboratory of Advanced Light Conversion Materials and Biophotonics, Department of Chemistry, Renmin University of China, Beijing 100872, P. R. China
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