1
|
Yang J, Daqiqshirazi M, Ritschel T, Bahrami A, Lehmann S, Wolf D, Feng W, Pöhl A, Charvot J, Bureš F, Brumme T, Lubk A, Geck J, Nielsch K. Interfacial Distortion of Sb 2Te 3-Sb 2Se 3 Multilayers via Atomic Layer Deposition for Enhanced Thermoelectric Properties. ACS NANO 2024; 18:17500-17508. [PMID: 38919047 PMCID: PMC11238618 DOI: 10.1021/acsnano.3c13152] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/28/2023] [Revised: 06/17/2024] [Accepted: 06/18/2024] [Indexed: 06/27/2024]
Abstract
Atomic layer deposition (ALD) is an effective technique for depositing thin films with precise control of layer thickness and functional properties. In this work, Sb2Te3-Sb2Se3 nanostructures were synthesized using thermal ALD. A decrease in the Sb2Te3 layer thickness led to the emergence of distinct peaks from the Laue rings, indicative of a highly textured film structure with optimized crystallinity. Density functional theory simulations revealed that carrier redistribution occurs at the interface to establish charge equilibrium. By carefully optimizing the layer thicknesses, we achieved an obvious enhancement in the Seebeck coefficient, reaching a peak figure of merit (zT) value of 0.38 at room temperature. These investigations not only provide strong evidence for the potential of ALD manipulation to improve the electrical performance of metal chalcogenides but also offer valuable insights into achieving high performance in two-dimensional materials.
Collapse
Affiliation(s)
- Jun Yang
- Leibniz
Institute for Solid State and Materials Research, Dresden 01069, Germany
- Institute
of Materials Science, Technische Universität
Dresden, Dresden 01062, Germany
| | | | - Tobias Ritschel
- Institute
of Solid State and Materials Physics, Technische
Universität Dresden, Dresden 01069, Germany
| | - Amin Bahrami
- Leibniz
Institute for Solid State and Materials Research, Dresden 01069, Germany
| | - Sebastian Lehmann
- Leibniz
Institute for Solid State and Materials Research, Dresden 01069, Germany
| | - Daniel Wolf
- Leibniz
Institute for Solid State and Materials Research, Dresden 01069, Germany
| | - Wen Feng
- Leibniz
Institute for Solid State and Materials Research, Dresden 01069, Germany
| | - Almut Pöhl
- Leibniz
Institute for Solid State and Materials Research, Dresden 01069, Germany
| | - Jaroslav Charvot
- Institute
of Organic Chemistry and Technology, Faculty of Chemical Technology, University of Pardubice, Pardubice 53210, Czech Republic
| | - Filip Bureš
- Institute
of Organic Chemistry and Technology, Faculty of Chemical Technology, University of Pardubice, Pardubice 53210, Czech Republic
| | - Thomas Brumme
- Chair
of Theoretical Chemistry, Technische Universität
Dresden, Dresden 01069, Germany
| | - Axel Lubk
- Leibniz
Institute for Solid State and Materials Research, Dresden 01069, Germany
| | - Jochen Geck
- Institute
of Solid State and Materials Physics, Technische
Universität Dresden, Dresden 01069, Germany
| | - Kornelius Nielsch
- Leibniz
Institute for Solid State and Materials Research, Dresden 01069, Germany
- Institute
of Materials Science, Technische Universität
Dresden, Dresden 01062, Germany
| |
Collapse
|
2
|
Yang J, Mukherjee S, Lehmann S, Krahl F, Wang X, Potapov P, Lubk A, Ritschel T, Geck J, Nielsch K. Low-Temperature ALD of SbO x /Sb 2 Te 3 Multilayers with Boosted Thermoelectric Performance. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2306350. [PMID: 37880880 DOI: 10.1002/smll.202306350] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/26/2023] [Revised: 09/22/2023] [Indexed: 10/27/2023]
Abstract
Nanoscale superlattice (SL) structures have proven to be effective in enhancing the thermoelectric (TE) properties of thin films. Herein, the main phase of antimony telluride (Sb2 Te3 ) thin film with sub-nanometer layers of antimony oxide (SbOx ) is synthesized via atomic layer deposition (ALD) at a low temperature of 80 °C. The SL structure is tailored by varying the cycle numbers of Sb2 Te3 and SbOx . A remarkable power factor of 520.8 µW m-1 K-2 is attained at room temperature when the cycle ratio of SbOx and Sb2 Te3 is set at 1:1000 (i.e., SO:ST = 1:1000), corresponding to the highest electrical conductivity of 339.8 S cm-1 . The results indicate that at the largest thickness, corresponding to ten ALD cycles, the SbOx layers act as a potential barrier that filters out the low-energy charge carriers from contributing to the overall electrical conductivity. In addition to enhancing the scattering of the mid-to-long-wavelength at the SbOx /Sb2 Te3 interface, the presence of the SbOx sub-layer induces the confinement effect and strain forces in the Sb2 Te3 thin film, thereby effectively enhancing the Seebeck coefficient and reducing the thermal conductivity. These findings provide a new perspective on the design of SL-structured TE materials and devices.
Collapse
Affiliation(s)
- Jun Yang
- Institute for Metallic Materials, Leibniz Institute for Solid State and Materials Research, 01069, Dresden, Germany
- Institute of Materials Science, Technische Universität Dresden, 01062, Dresden, Germany
| | - Samik Mukherjee
- Institute for Metallic Materials, Leibniz Institute for Solid State and Materials Research, 01069, Dresden, Germany
- Jio Institute, Navi Mumbai, Maharashtra, 410206, India
| | - Sebastian Lehmann
- Institute for Metallic Materials, Leibniz Institute for Solid State and Materials Research, 01069, Dresden, Germany
| | - Fabian Krahl
- Institute for Metallic Materials, Leibniz Institute for Solid State and Materials Research, 01069, Dresden, Germany
| | - Xiaoyu Wang
- Institute for Integrative Nanosciences, Leibniz Institute for Solid State and Materials Research, 01069, Dresden, Germany
- School of Physics and Optoelectronic Engineering, Hainan University, Haikou, 570228, China
| | - Pavel Potapov
- Institute for Solid State Research, Leibniz Institute for Solid State and Materials Research, 01069, Dresden, Germany
| | - Axel Lubk
- Institute for Solid State Research, Leibniz Institute for Solid State and Materials Research, 01069, Dresden, Germany
| | - Tobias Ritschel
- Institute of Solid State and Materials Physics, Technische Universität Dresden, 01069, Dresden, Germany
| | - Jochen Geck
- Institute of Solid State and Materials Physics, Technische Universität Dresden, 01069, Dresden, Germany
| | - Kornelius Nielsch
- Institute for Metallic Materials, Leibniz Institute for Solid State and Materials Research, 01069, Dresden, Germany
- Institute of Materials Science, Technische Universität Dresden, 01062, Dresden, Germany
| |
Collapse
|
3
|
Li S, Wang L, Ma D, Jiang Y, Zhang J, Guo K. Construct Amorphous Polymer Interface to Enhance the Thermoelectric Performance of Commercial Bi 0.5Sb 1.5Te 3 Materials. ACS APPLIED MATERIALS & INTERFACES 2024; 16:3586-3592. [PMID: 38199965 DOI: 10.1021/acsami.3c17859] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/12/2024]
Abstract
Interfaces, such as grain boundaries and phase boundaries in thermoelectric (TE) materials, play a crucial role in the carrier/phonon transport. Accurate control of the features of interfaces, including composition, crystalline nature, and thickness may give rise to a promising pathway to break the trade-off between phonon and carrier transport properties, which is essential to design high-performance TE materials. In this work, the amorphous polymer interface (API) layer is introduced to the p-type commercial Bi0.5Sb1.5Te3 (BST) TE material by the liquid-phase sintering process. Due to the larger mismatch in the acoustic impedance or phonon spectra between the amorphous polymer layer and the BST phase, the additional interfacial thermal resistance is introduced, which results in a large decrease in lattice thermal conductivity. It is found that the interfacial thermal resistance at the API is much higher than that of normal grain boundary and hetero interface reported in the literature. Conversely, taking advantage of the strong electron and phonon scattering, a large net get of ZT was achieved. A maximum ZT of ∼1.22 at 350 K was obtained in the BST/polyimide-0.5% sample, which is considerably greater than that of the commercial BST matrix (∼0.99 at 350 K). Furthermore, the optimized BST/polymer sample also exhibited almost 20% enhancement in hardness compared with the pure BST sample. This work has opened a new window for designing high-performance TE composites, which may extend to other material systems.
Collapse
Affiliation(s)
- Shuankui Li
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, China
- Research Center for Advanced Information Materials (CAIM), Huangpu Research & Graduate School of Guangzhou University, Sino-Singapore Guangzhou Knowledge City, Huangpu District, Guangzhou 510555, China
| | - Liangliang Wang
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, China
| | - Danning Ma
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, China
| | - Yuanxin Jiang
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, China
| | - Jiye Zhang
- School of Materials Science and Engineering, Shanghai University, 99 Shangda Road, Shanghai 200444, China
| | - Kai Guo
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, China
- Research Center for Advanced Information Materials (CAIM), Huangpu Research & Graduate School of Guangzhou University, Sino-Singapore Guangzhou Knowledge City, Huangpu District, Guangzhou 510555, China
- Key Lab of Si-based Information Materials & Devices and Integrated Circuits Design, Department of Education of Guangdong Province, Guangzhou 510006, China
| |
Collapse
|
4
|
Zhao H, Xue Y, Zhao Y, Chen J, Chang B, Huang H, Xu T, Sun L, Chen Y, Sha J, Zhu B, Tao L. Large-area 2D bismuth antimonide with enhanced thermoelectric properties via multiscale electron-phonon decoupling. MATERIALS HORIZONS 2023; 10:2053-2061. [PMID: 36930046 DOI: 10.1039/d2mh01226j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
It is a challenge to obtain high thermoelectric efficiency owing to the conflicting parameters of the materials that are required. In this work, the composition-adjustable 2D bismuth antimonide (Bi100-xSbx) is synthesized using an e-beam evaporation system with homemade targets. Engineering multiscale defects is done to optimize the thermoelectric performance in the compound. Sb alloying introduces atomic defects, lattice distortion and increased grain boundary. They drastically decrease the thermal conductivity, with an ultralow value of ∼0.23 W m-1 K-1 obtained for the composition with x = 18. It is noticed that the atomic and nanoscale defects do not deteriorate the electrical conductivity (105 S m-1), and the value is even comparable to the bulk counterpart over a wide composition range (0 ≤ x ≤ 35). Annealing induces pore structure with microscale defects, which increase the Seebeck coefficient by 84% due to the energy barrier. The resultant ZT of 0.13 is enhanced by 420% in the annealed Bi82Sb18 when compared with the as-grown Bi. This work demonstrates a cost-effective and controllable way to decouple electrons and phonons in the thermoelectric field.
Collapse
Affiliation(s)
- Hanliu Zhao
- School of Materials Science and Engineering, Jiangsu Key Laboratory of Advanced Metallic Materials, Southeast University, Nanjing 211189, People's Republic of China.
| | - Yuxin Xue
- School of Materials Science and Engineering, Jiangsu Key Laboratory of Advanced Metallic Materials, Southeast University, Nanjing 211189, People's Republic of China.
| | - Yu Zhao
- School of Mechanical Engineering, Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments, Southeast University, Nanjing 211189, People's Republic of China.
| | - Jiayi Chen
- School of Materials Science and Engineering, Jiangsu Key Laboratory of Advanced Metallic Materials, Southeast University, Nanjing 211189, People's Republic of China.
| | - Bo Chang
- School of Materials Science and Engineering, Jiangsu Key Laboratory of Advanced Metallic Materials, Southeast University, Nanjing 211189, People's Republic of China.
| | - Hao Huang
- School of Materials Science and Engineering, Jiangsu Key Laboratory of Advanced Metallic Materials, Southeast University, Nanjing 211189, People's Republic of China.
| | - Tao Xu
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University, Nanjing 211189, People's Republic of China
| | - Litao Sun
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University, Nanjing 211189, People's Republic of China
| | - Yunfei Chen
- School of Mechanical Engineering, Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments, Southeast University, Nanjing 211189, People's Republic of China.
| | - Jingjie Sha
- School of Mechanical Engineering, Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments, Southeast University, Nanjing 211189, People's Republic of China.
| | - Beibei Zhu
- School of Materials Science and Engineering, Jiangsu Key Laboratory of Advanced Metallic Materials, Southeast University, Nanjing 211189, People's Republic of China.
| | - Li Tao
- School of Materials Science and Engineering, Jiangsu Key Laboratory of Advanced Metallic Materials, Southeast University, Nanjing 211189, People's Republic of China.
| |
Collapse
|