Understanding the Effect of Top Electrode on Ferroelectricity in Atomic Layer Deposited Hf0.5Zr0.5O2 Thin Films

Ferroelectric freestanding hafnia membranes with metastable rhombohedral structure down to 1-nm-thick

Two-dimensional freestanding membranes of materials, which can be transferred onto and make interfaces with any material, have attracted attention in the search for functional properties that can be utilized for next-generation nanoscale devices. We fabricated stable 1-nm-thick hafnia membranes exhibiting the metastable rhombohedral structure and out-of-plane ferroelectric polarizations as large as 13 μC/cm2. We also found that the rhombohedral phase transforms into another metastable orthorhombic phase without the ferroelectricity deteriorating as the thickness increases. Our results reveal the key role of the rhombohedral phase in the scale-free ferroelectricity in hafnia and also provide critical insights into the formation mechanism and phase stability of the metastable hafnia. Moreover, ultrathin hafnia membranes enable heterointerfaces and devices to be fabricated from structurally dissimilar materials beyond structural constrictions in conventional film-growth techniques.

Tunable defect engineering of Mo/TiON electrode in angstrom-laminated HfO2/ZrO2ferroelectric capacitors towards long endurance and high temperature retention

A novel defect control approach based on laminated HfO2/ZrO2with multifunctional TiN/Mo/TiOxNyelectrode is proposed to significantly improve the endurance and data retention in HZO-based ferroelectric capacitor. The O-rich interface reduces leakage current and prolong the endurance up to 1011cycles while retaining a 2Pr value of 34 (μC cm-2) at 3.4 MV cm-1. Using first-principles calculations and experiments, we demonstrate that the enhancement of endurance is ascribed to the higher migration barrier of oxygen vacancies within the laminated HZO film and higher work function of MoOx/TiOxNybetween top electrode and the insulating oxide. This 2.5 nm thick TiOxNybarrier further increase the grain size of HZO, lowering the activation field and thus improving polarization reversal speed. This interfacial layer further decreases the overall capacitance, increases the depolarization field, thereby enhancing the data retention. By fitting the data using the Arrhenius equation, we demonstrate a 10 years data retention is achieved at 109.6 °C, surpassing traditional SS-HZO of 78.2 °C with a 450 °C rapid thermal annealing (required by backend-of-the-line). This work elucidates that interfacial engineering serves as a crucial technology capable of resolving the endurance, storage capability, and high-temperature data retention issues for ferroelectric memory.

Electrochemistry of Thin Films and Nanostructured Materials

In the last few decades, the development and use of thin films and nanostructured materials to enhance physical and chemical properties of materials has been common practice in the field of materials science and engineering. The progress which has recently been made in tailoring the unique properties of thin films and nanostructured materials, such as a high surface area to volume ratio, surface charge, structure, anisotropic nature, and tunable functionalities, allow expanding the range of their possible applications from mechanical, structural, and protective coatings to electronics, energy storage systems, sensing, optoelectronics, catalysis, and biomedicine. Recent advances have also focused on the importance of electrochemistry in the fabrication and characterization of functional thin films and nanostructured materials, as well as various systems and devices based on these materials. Both cathodic and anodic processes are being extensively developed in order to elaborate new procedures and possibilities for the synthesis and characterization of thin films and nanostructured materials.