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Yu X, Ji Y, Shen X, Le X. Progress in Advanced Infrared Optoelectronic Sensors. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:845. [PMID: 38786801 PMCID: PMC11123936 DOI: 10.3390/nano14100845] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/08/2024] [Revised: 05/09/2024] [Accepted: 05/10/2024] [Indexed: 05/25/2024]
Abstract
Infrared optoelectronic sensors have attracted considerable research interest over the past few decades due to their wide-ranging applications in military, healthcare, environmental monitoring, industrial inspection, and human-computer interaction systems. A comprehensive understanding of infrared optoelectronic sensors is of great importance for achieving their future optimization. This paper comprehensively reviews the recent advancements in infrared optoelectronic sensors. Firstly, their working mechanisms are elucidated. Then, the key metrics for evaluating an infrared optoelectronic sensor are introduced. Subsequently, an overview of promising materials and nanostructures for high-performance infrared optoelectronic sensors, along with the performances of state-of-the-art devices, is presented. Finally, the challenges facing infrared optoelectronic sensors are posed, and some perspectives for the optimization of infrared optoelectronic sensors are discussed, thereby paving the way for the development of future infrared optoelectronic sensors.
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Affiliation(s)
- Xiang Yu
- School of Physics, Beihang University, Beijing 100191, China
- Beijing Advanced Innovation Center for Big Data-Based Precision Medicine, School of Medicine and Engineering, Beihang University, Beijing 100191, China
- Beijing Key Laboratory of Advanced Nuclear Energy Materials and Physics, Beihang University, Beijing 100191, China
| | - Yun Ji
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583, Singapore
| | - Xinyi Shen
- School of Physics, Beihang University, Beijing 100191, China
- Beijing Advanced Innovation Center for Big Data-Based Precision Medicine, School of Medicine and Engineering, Beihang University, Beijing 100191, China
- Beijing Key Laboratory of Advanced Nuclear Energy Materials and Physics, Beihang University, Beijing 100191, China
| | - Xiaoyun Le
- School of Physics, Beihang University, Beijing 100191, China
- Beijing Advanced Innovation Center for Big Data-Based Precision Medicine, School of Medicine and Engineering, Beihang University, Beijing 100191, China
- Beijing Key Laboratory of Advanced Nuclear Energy Materials and Physics, Beihang University, Beijing 100191, China
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Altvater M, Muratore C, Snure M, Glavin NR. Two-Step Conversion of Metal and Metal Oxide Precursor Films to 2D Transition Metal Dichalcogenides and Heterostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2400463. [PMID: 38733217 DOI: 10.1002/smll.202400463] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/19/2024] [Revised: 04/11/2024] [Indexed: 05/13/2024]
Abstract
The widely studied class of two-dimensional (2D) materials known as transition metal dichalcogenides (TMDs) are now well-poised to be employed in real-world applications ranging from electronic logic and memory devices to gas and biological sensors. Several scalable thin film synthesis techniques have demonstrated nanoscale control of TMD material thickness, morphology, structure, and chemistry and correlated these properties with high-performing, application-specific device metrics. In this review, the particularly versatile two-step conversion (2SC) method of TMD film synthesis is highlighted. The 2SC technique relies on deposition of a solid metal or metal oxide precursor material, followed by a reaction with a chalcogen vapor at an elevated temperature, converting the precursor film to a crystalline TMD. Herein, the variables at each step of the 2SC process including the impact of the precursor film material and deposition technique, the influence of gas composition and temperature during conversion, as well as other factors controlling high-quality 2D TMD synthesis are considered. The specific advantages of the 2SC approach including deposition on diverse substrates, low-temperature processing, orientation control, and heterostructure synthesis, among others, are featured. Finally, emergent opportunities that take advantage of the 2SC approach are discussed to include next-generation electronics, sensing, and optoelectronic devices, as well as catalysis for energy-related applications.
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Affiliation(s)
- Michael Altvater
- Air Force Research Laboratory, Materials and Manufacturing Directorate, WPAFB, OH, 45433, USA
- UES Inc., Dayton, OH, 45432, USA
| | - Christopher Muratore
- Department of Chemical and Materials Engineering, University of Dayton, Dayton, 45469, OH, USA
| | - Michael Snure
- Air Force Research Laboratory, Sensors Directorate, WPAFB, OH, 45433, USA
| | - Nicholas R Glavin
- Air Force Research Laboratory, Materials and Manufacturing Directorate, WPAFB, OH, 45433, USA
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Ahmed A, Zahir Iqbal M, Dahshan A, Aftab S, Hegazy HH, Yousef ES. Recent advances in 2D transition metal dichalcogenide-based photodetectors: a review. NANOSCALE 2024; 16:2097-2120. [PMID: 38204422 DOI: 10.1039/d3nr04994a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/12/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as a highly promising platform for the development of photodetectors (PDs) owing to their remarkable electronic and optoelectronic properties. Highly effective PDs can be obtained by making use of the exceptional properties of 2D materials, such as their high transparency, large charge carrier mobility, and tunable electronic structure. The photodetection mechanism in 2D TMD-based PDs is thoroughly discussed in this article, with special attention paid to the key characteristics that set them apart from PDs based on other integrated materials. This review examines how single TMDs, TMD-TMD heterostructures, TMD-graphene (Gr) hybrids, TMD-MXene composites, TMD-perovskite heterostructures, and TMD-quantum dot (QD) configurations show advanced photodetection. Additionally, a thorough analysis of the recent developments in 2D TMD-based PDs, highlighting their exceptional performance capabilities, including ultrafast photo response, ultrabroad detectivity, and ultrahigh photoresponsivity, attained through cutting-edge methods is provided. The article conclusion highlights the potential for ground-breaking discoveries in this fast developing field of research by outlining the challenges faced in the field of PDs today and providing an outlook on the prospects of 2D TMD-based PDs in the future.
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Affiliation(s)
- Anique Ahmed
- Faculty of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, 23640, Khyber Pakhtunkhwa, Pakistan.
| | - Muhammad Zahir Iqbal
- Faculty of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, 23640, Khyber Pakhtunkhwa, Pakistan.
| | - Alaa Dahshan
- Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
| | - Sikandar Aftab
- Department of Intelligent Mechatronics Engineering, Sejong University, Seoul 05006, South Korea
| | - Hosameldin Helmy Hegazy
- Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
| | - El Sayed Yousef
- Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
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Qiu D, Hou P. Ferroelectricity-Driven Self-Powered Weak Temperature and Broadband Light Detection in MoS 2/CuInP 2S 6/WSe 2 van der Waals Heterojunction Nanoarchitectonics. ACS APPLIED MATERIALS & INTERFACES 2023; 15:59671-59680. [PMID: 38102080 DOI: 10.1021/acsami.3c12695] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/17/2023]
Abstract
Two-dimensional ferroelectric materials enrich the modulation degrees of freedom in self-powered van der Waals temperature/light detectors by incorporating pyroelectric and bulk photovoltaic effects. However, in addition to the low polarization, the practical applications of these materials are limited due to the significant challenge posed by their ultrathin nature, which affects their polarization stability. In this report, we introduce a design for a dual heterostructure-stabilized van der Waals heterojunction that addresses this challenge by improving the performance and extending the operational lifetime of self-powered van der Waals temperature/light detectors. The design is demonstrated using the MoS2/CuInP2S6 (CIPS)/WSe2 van der Waals heterojunction, which exhibits sensitivity to small temperature changes induced by weak light across the ultraviolet to mid-infrared spectrum. It can generate a noticeable pyroelectric current without the need for an external voltage, and its pyroelectric coefficient exceeds 130 and 978 μC/m2 K for 45 and 70 nm CIPS, respectively. The heterojunction offers high detection accuracy, with a temperature variation sensitivity as small as 0.1 K and an optical power intensity detection range from low to 1 μW/cm2. Additionally, the heterojunction exhibits exceptional detectivity (D*) for different light wavelengths. Remarkably, the self-powered detection performance remains stable for months without obvious degradation in the natural environment. These results offer a promising solution for high-performance, self-sustaining temperature/light detection applications and pave the way for the development of future ferroelectricity-driven photodetection technologies.
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Affiliation(s)
- Dan Qiu
- School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, Hunan, China
| | - Pengfei Hou
- School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, Hunan, China
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