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Sun X, Fan H, Xu X, Li G, Gu X, Luo D, Shan C, Yang Q, Dong S, Miao C, Xie Z, Lu G, Wang DH, Sun PP, Kyaw AKK. A Fluorination Strategy and Low-Acidity Anchoring Group in Self-Assembled Molecules for Efficient and Stable Inverted Perovskite Solar Cells. Chemistry 2024; 30:e202400629. [PMID: 38594211 DOI: 10.1002/chem.202400629] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/15/2024] [Revised: 04/01/2024] [Accepted: 04/07/2024] [Indexed: 04/11/2024]
Abstract
Herein, we synthesized two donor-acceptor (D-A) type small organic molecules with self-assembly properties, namely MPA-BT-BA and MPA-2FBT-BA, both containing a low acidity anchoring group, benzoic acid. After systematically investigation, it is found that, with the fluorination, the MPA-2FBT-BA demonstrates a lower highest occupied molecular orbital (HOMO) energy level, higher hole mobility, higher hydrophobicity and stronger interaction with the perovskite layer than that of MPA-BT-BA. As a result, the device based-on MPA-2FBT-BA displays a better crystallization and morphology of perovskite layer with larger grain size and less non-radiative recombination. Consequently, the device using MPA-2FBT-BA as hole transport material achieved the power conversion efficiency (PCE) of 20.32 % and remarkable stability. After being kept in an N2 glove box for 116 days, the unsealed PSCs' device retained 93 % of its initial PCE. Even exposed to air with a relative humidity range of 30±5 % for 43 days, its PCE remained above 91 % of its initial condition. This study highlights the vital importance of the fluorination strategy combined with a low acidity anchoring group in SAMs, offering a pathway to achieve efficient and stable PSCs.
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Affiliation(s)
- Xiaowen Sun
- School of Flexible Electronics (Future Technologies), Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, P. R. China
- Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, Department of Electrical & Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Hua Fan
- School of Flexible Electronics (Future Technologies), Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, P. R. China
- Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, Department of Electrical & Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Xiaowei Xu
- Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, Department of Electrical & Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Gongqiang Li
- School of Flexible Electronics (Future Technologies), Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, P. R. China
- School of Pharmaceutical and Chemical Engineering, Taizhou University, Jiaojiang, Zhejiang, 318000, P. R. China
| | - Xiaoyu Gu
- Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, Department of Electrical & Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Dou Luo
- Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, Department of Electrical & Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Chengwei Shan
- Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, Department of Electrical & Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Qiong Yang
- School of Flexible Electronics (Future Technologies), Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, P. R. China
- Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, Department of Electrical & Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Shixing Dong
- Jiangsu Sierbang Petrochemical Co. LTD., Lianyungang, Jiangsu, 222248, P. R. China
| | - Chunyang Miao
- School of Flexible Electronics (Future Technologies), Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, P. R. China
| | - Zheng Xie
- School of Flexible Electronics (Future Technologies), Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, P. R. China
| | - Gang Lu
- School of Flexible Electronics (Future Technologies), Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, P. R. China
| | - Dong Hwan Wang
- School of Integrative Engineering, Chung-Ang University, 84 Heukseok-Ro, Dongjak-gu, Seoul, 06974, Republic of Korea
| | - Ping-Ping Sun
- School of Chemistry and Chemical Engineering, Hainan University, Haikou, 570228, P. R. China
| | - Aung Ko Ko Kyaw
- Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, Department of Electrical & Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
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Sun ZZ, Li Y, Xu XL. Donor engineering of a benzothiadiazole-based D-A-D-type molecular semiconductor for perovskite solar cells: a theoretical study. Phys Chem Chem Phys 2024; 26:6817-6825. [PMID: 38324386 DOI: 10.1039/d3cp05766f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/09/2024]
Abstract
Due to the easy formation of compact molecular packing arrangements and the favorable photophysical and electrochemical properties, donor-acceptor-donor (D-A-D)-type small molecule hole-transporting materials (HTMs) have been widely synthesized and researched to improve the efficiency and stability of perovskite solar cells (PSCs). The main approach in recent experiments has been to seek good acceptors, whereas the influence of the electron-donating units has been less reported. In this work, six new benzothiadiazole-based D-A-D-type HTMs are tailored by employing the ethyl-substituted phenoxazine (POZ), phenothiazine (PTZ) and carbazole (CZ) as the donors. To obtain an elementary understanding of new HTMs, the electronic, optical, hole-transporting and interfacial properties are simulated with quantum chemistry methods. The results indicate that all tailored HTMs exhibit suitable energy alignment compared with the band structures of the perovskite, and the continuous highest occupied molecular orbital (HOMO) levels will be helpful for interfacial energy regulation. In comparison with the YN1, the maximum absorption wavelengths of the newly designed HTMs are red-shifted due to the decreased excitation energies from the ground-state to the first singlet excited-state. Importantly, the hole mobilities of all designed HTMs are distinctly higher than the referenced YN1, which is contributed by the better planarity of the molecular skeleton and the easier orbital overlapping between adjacent molecules. The interfacial simulations manifest that the FAPbI3/SM37 system displays a more stable adsorption configuration and greater charge redistributions at the interface compared to YN1, which further promotes the separation of photogenerated electron-hole pairs. Moreover, larger Stokes shifts and better solubility are also acquired for the new HTMs. In summary, our calculations not only propose several potential highly efficient HTMs, but also provide useful insights at the atomic level for the experimental synthesis of new D-A-D-type HTMs.
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Affiliation(s)
- Zhu-Zhu Sun
- College of Physics and Electronic Engineering, Heze University, Heze, 274015, China.
| | - Yushan Li
- College of Physics and Electronic Engineering, Heze University, Heze, 274015, China.
| | - Xing-Lei Xu
- College of Physics and Electronic Engineering, Heze University, Heze, 274015, China.
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Hua W, Niu Q, Zhang L, Chai B, Yang J, Zeng W, Xia R, Min Y. Enhancing the Performance of Perovskite Solar Cells by Introducing 4-(Trifluoromethyl)-1 H-imidazole Passivation Agents. Molecules 2023; 28:4976. [PMID: 37446637 DOI: 10.3390/molecules28134976] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/25/2023] [Revised: 06/16/2023] [Accepted: 06/22/2023] [Indexed: 07/15/2023] Open
Abstract
Defects in perovskite films are one of the main factors that affect the efficiency and stability of halide perovskite solar cells (PSCs). Uncoordinated ions (such as Pb2+, I-) act as trap states, causing the undesirable non-radiative recombination of photogenerated carriers. The formation of Lewis acid-base adducts in perovskite directly involves the crystallization process, which can effectively passivate defects. In this work, 4-(trifluoromethyl)-1H-imidazole (THI) was introduced into the perovskite precursor solution as a passivation agent. THI is a typical amphoteric compound that exhibits a strong Lewis base property due to its lone pair electrons. It coordinates with Lewis acid Pb2+, leading to the reduction in defect density and increase in crystallinity of perovskite films. Finally, the power conversion efficiency (PCE) of PSC increased from 16.49% to 18.97% due to the simultaneous enhancement of open-circuit voltage (VOC), short circuit current density (JSC) and fill factor (FF). After 30 days of storage, the PCE of the 0.16 THI PSC was maintained at 61.9% of its initial value, which was 44.3% for the control device. The working mechanism of THI was investigated. This work provides an attractive alternative method to passivate the defects in perovskite.
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Affiliation(s)
- Wei Hua
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Qiaoli Niu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Ling Zhang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Baoxiang Chai
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Jun Yang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Wenjin Zeng
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Ruidong Xia
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Yonggang Min
- The School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China
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