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Zhu X, Wang Y, Nadinov I, Thomas S, Gutiérrez-Arzaluz L, He T, Wang JX, Alkhazragi O, Ng TK, Bakr OM, Alshareef HN, Ooi BS, Mohammed OF. Leveraging Intermolecular Charge Transfer for High-Speed Optical Wireless Communication. J Phys Chem Lett 2024; 15:2988-2994. [PMID: 38457267 PMCID: PMC10961838 DOI: 10.1021/acs.jpclett.4c00268] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/26/2024] [Revised: 02/26/2024] [Accepted: 03/05/2024] [Indexed: 03/10/2024]
Abstract
Intermolecular charge transfer (CT) complexes have emerged as versatile platforms with customizable optical properties that play a pivotal role in achieving tunable photoresponsive materials. In this study, we introduce an innovative approach for enhancing the modulation bandwidth and net data rates in optical wireless communications (OWCs) by manipulating combinations of monomeric molecules within intermolecular CT complexes. Concurrently, we extensively investigate the intermolecular charge transfer mechanism through diverse steady-state and ultrafast time-resolved spectral techniques in the mid-infrared range complemented by theoretical calculations using density functional theory. These intermolecular CT complexes empower precise control over the -3 dB bandwidth and net data rates in OWC applications. The resulting color converters exhibit promising performance, achieving a net data rate of ∼100 Mb/s, outperforming conventional materials commonly used in the manufacture of OWC devices. This research underscores the substantial potential of engineering intermolecular charge transfer complexes as an ongoing progression and commercialization within the OWC. This carries profound implications for future initiatives in high-speed and secure data transmission, paving the way for promising endeavors in this area.
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Affiliation(s)
- Xin Zhu
- Advanced
Membranes and Porous Materials Center, Division of Physical Science
and Engineering, King Abdullah University
of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Yue Wang
- Photonics
Laboratory, Division of Computer, Electrical, and Mathematical Sciences
and Engineering, King Abdullah University
of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Issatay Nadinov
- Advanced
Membranes and Porous Materials Center, Division of Physical Science
and Engineering, King Abdullah University
of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
- Materials
Science and Engineering, Physical Science and Engineering Division, King Abdullah University of Science and Technology
(KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Simil Thomas
- Advanced
Membranes and Porous Materials Center, Division of Physical Science
and Engineering, King Abdullah University
of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Luis Gutiérrez-Arzaluz
- Advanced
Membranes and Porous Materials Center, Division of Physical Science
and Engineering, King Abdullah University
of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
- KAUST
Catalysis Center, Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Tengyue He
- Advanced
Membranes and Porous Materials Center, Division of Physical Science
and Engineering, King Abdullah University
of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Jian-Xin Wang
- Advanced
Membranes and Porous Materials Center, Division of Physical Science
and Engineering, King Abdullah University
of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Omar Alkhazragi
- Photonics
Laboratory, Division of Computer, Electrical, and Mathematical Sciences
and Engineering, King Abdullah University
of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Tien Khee Ng
- Photonics
Laboratory, Division of Computer, Electrical, and Mathematical Sciences
and Engineering, King Abdullah University
of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Osman M. Bakr
- KAUST
Catalysis Center, Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Husam N. Alshareef
- Materials
Science and Engineering, Physical Science and Engineering Division, King Abdullah University of Science and Technology
(KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Boon S. Ooi
- Photonics
Laboratory, Division of Computer, Electrical, and Mathematical Sciences
and Engineering, King Abdullah University
of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Omar F. Mohammed
- Advanced
Membranes and Porous Materials Center, Division of Physical Science
and Engineering, King Abdullah University
of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
- KAUST
Catalysis Center, Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
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Vishwanathan Vidyanagar A, Bhat SV. Solution-Processed Sb 2S 3-Based Heterojunction for Self-Powered Broad Band Weak Light Detection. ACS APPLIED MATERIALS & INTERFACES 2024; 16:3631-3639. [PMID: 38189662 DOI: 10.1021/acsami.3c13051] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/09/2024]
Abstract
Antimony sulfide (Sb2S3) has recently regained the attention of photovoltaic researchers as a promising solar absorber; however, its application for the detection of white light remains relatively unexplored. Herein, we report on the self-powered heterojunction photodetector based on a device-grade Sb2S3 film made at low temperature with solution processing. The Sb2S3 absorber film was prepared by single-step spin coating of a novel precursor ink using antimony trichloride as the antimony source along with the low melting thioacetamide as the sulfur source in 2-methoxyethanol, a low boiling environmentally friendly solvent. A simple TiO2/Sb2S3 heterojunction device made by using the film shows a power conversion efficiency of 1.22% without any hole transporting layer. Interestingly, the self-powered photodetector performance of the device under white light exhibits a high on/off ratio of 2.2 × 104 under 1 sun illumination. Moreover, this optical filter-free ultraviolet-visible absorbing near-infrared blind photodetector is equally capable of detecting both strong and weak white light, with a response time of 98 ms. Further, an example of the real-life application of the device is successfully demonstrated by constructing a weak light-detecting sunlight tracking system.
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Affiliation(s)
- Akshay Vishwanathan Vidyanagar
- Green Energy Materials Laboratory, Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur 603 203, India
| | - S Venkataprasad Bhat
- Green Energy Materials Laboratory, Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur 603 203, India
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Deng H, Kang Y, Jia Y, Chen Z, Wang W, Xia Y, Lai Y, Cheng S. Gate-controlled Sb 2S 3 thin film photodetectors for logic switches. OPTICS LETTERS 2023; 48:5265-5268. [PMID: 37831843 DOI: 10.1364/ol.500705] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/19/2023] [Accepted: 09/05/2023] [Indexed: 10/15/2023]
Abstract
Antimony sulfide (Sb2S3) photodetectors (PDs) have great potential in commercial applications. The performances are affected by photocarrier distribution and recombination. Here, the gate-controlled Sb2S3 thin film PD is fabricated on the TiO2/SiO2/Si substrate by the vacuum method. The p-channel Sb2S3 transistor obtained a threshold voltage of 0.6 V and a switching ratio of 1064, achieving an effective regulation by gate voltages. A negative gate voltage can enhance conductivity and can suppress recombination. The responsivity and detectivity of the PD reach 1.6 A/W and 1.2 × 1011 Jones, respectively. The device realizes logic outputs by the signal inputs of illumination and gate voltage.
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