High-Performance and Stable Sb2S3 Thin-Film Photodetectors for Potential Application in Visible Light Communication

Leveraging Intermolecular Charge Transfer for High-Speed Optical Wireless Communication

Intermolecular charge transfer (CT) complexes have emerged as versatile platforms with customizable optical properties that play a pivotal role in achieving tunable photoresponsive materials. In this study, we introduce an innovative approach for enhancing the modulation bandwidth and net data rates in optical wireless communications (OWCs) by manipulating combinations of monomeric molecules within intermolecular CT complexes. Concurrently, we extensively investigate the intermolecular charge transfer mechanism through diverse steady-state and ultrafast time-resolved spectral techniques in the mid-infrared range complemented by theoretical calculations using density functional theory. These intermolecular CT complexes empower precise control over the -3 dB bandwidth and net data rates in OWC applications. The resulting color converters exhibit promising performance, achieving a net data rate of ∼100 Mb/s, outperforming conventional materials commonly used in the manufacture of OWC devices. This research underscores the substantial potential of engineering intermolecular charge transfer complexes as an ongoing progression and commercialization within the OWC. This carries profound implications for future initiatives in high-speed and secure data transmission, paving the way for promising endeavors in this area.

Solution-Processed Sb2S3-Based Heterojunction for Self-Powered Broad Band Weak Light Detection

Antimony sulfide (Sb2S3) has recently regained the attention of photovoltaic researchers as a promising solar absorber; however, its application for the detection of white light remains relatively unexplored. Herein, we report on the self-powered heterojunction photodetector based on a device-grade Sb2S3 film made at low temperature with solution processing. The Sb2S3 absorber film was prepared by single-step spin coating of a novel precursor ink using antimony trichloride as the antimony source along with the low melting thioacetamide as the sulfur source in 2-methoxyethanol, a low boiling environmentally friendly solvent. A simple TiO2/Sb2S3 heterojunction device made by using the film shows a power conversion efficiency of 1.22% without any hole transporting layer. Interestingly, the self-powered photodetector performance of the device under white light exhibits a high on/off ratio of 2.2 × 104 under 1 sun illumination. Moreover, this optical filter-free ultraviolet-visible absorbing near-infrared blind photodetector is equally capable of detecting both strong and weak white light, with a response time of 98 ms. Further, an example of the real-life application of the device is successfully demonstrated by constructing a weak light-detecting sunlight tracking system.

Gate-controlled Sb2S3 thin film photodetectors for logic switches

Antimony sulfide (Sb2S3) photodetectors (PDs) have great potential in commercial applications. The performances are affected by photocarrier distribution and recombination. Here, the gate-controlled Sb2S3 thin film PD is fabricated on the TiO2/SiO2/Si substrate by the vacuum method. The p-channel Sb2S3 transistor obtained a threshold voltage of 0.6 V and a switching ratio of 1064, achieving an effective regulation by gate voltages. A negative gate voltage can enhance conductivity and can suppress recombination. The responsivity and detectivity of the PD reach 1.6 A/W and 1.2 × 1011 Jones, respectively. The device realizes logic outputs by the signal inputs of illumination and gate voltage.