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Cao J, Liu CK, Xu Y, Loi HL, Wang T, Li MG, Liu L, Yan F. High-Performance Ideal Bandgap Sn-Pb Mixed Perovskite Solar Cells Achieved by MXene Passivation. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2403920. [PMID: 39148188 DOI: 10.1002/smll.202403920] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/14/2024] [Revised: 08/07/2024] [Indexed: 08/17/2024]
Abstract
Ideal bandgap (1.3-1.4 eV) Sn-Pb mixed perovskite solar cells (PSC) hold the maximum theoretical efficiency given by the Shockley-Queisser limit. However, achieving high efficiency and stable Sn-Pb mixed PSCs remains challenging. Here, piperazine-1,4-diium tetrafluoroborate (PDT) is introduced as spacer for bottom interface modification of ideal bandgap Sn-Pb mixed perovskite. This spacer enhances the quality of the upper perovskite layer and forms better energy band alignment, leading to enhanced charge extraction at the hole transport layer (HTL)/perovskite interface. Then, 2D Ti3C2Tx MXene is incorporated for surface treatment of perovskite, resulting in reduced surface trap density and enhanced interfacial electron transfer. The combinations of double-sided treatment afford the ideal bandgap PSC with a high efficiency of 20.45% along with improved environment stability. This work provides a feasible guideline to prepare high-performance and stable ideal-bandgap PSCs.
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Affiliation(s)
- Jiupeng Cao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - Chun-Ki Liu
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - Yang Xu
- Division of Integrative Systems and Design, Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - Hok-Leung Loi
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - Tianyue Wang
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - Mitch Guijun Li
- Division of Integrative Systems and Design, Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - Lixian Liu
- School of Optoelectronic Engineering, Xidian University, Xi'an, 710071, P. R. China
| | - Feng Yan
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, 999077, P. R. China
- Research Institute of Intelligent Wearable Systems, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, 999077, P. R. China
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Wang H, Zhang Q, Lin Z, Liu H, Wei X, Song Y, Lv C, Li W, Zhu L, Wang K, Cui Z, Wang L, Lin C, Yin P, Song T, Bai Y, Chen Q, Yang S, Chen H. Spatially selective defect management of CsPbI 3 films for high-performance carbon-based inorganic perovskite solar cells. Sci Bull (Beijing) 2024; 69:1050-1060. [PMID: 38341351 DOI: 10.1016/j.scib.2024.01.038] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/08/2023] [Revised: 11/08/2023] [Accepted: 01/24/2024] [Indexed: 02/12/2024]
Abstract
Defects formed at the surface, buried interface and grain boundaries (GB) of CsPbI3 perovskite films considerably limit photovoltaic performance. Such defects could be passivated effectively by the most prevalent post modification strategy without compromising the photoelectric properties of perovskite films, but it is still a great challenge to make this strategy comprehensive to different defects spatially distributed throughout the films. Herein, a spatially selective defect management (SSDM) strategy is developed to roundly passivate various defects at different locations within the perovskite film by a facile one-step treatment procedure using a piperazine-1,4-diium tetrafluoroborate (PZD(BF4)2) solution. The small-size PZD2+ cations could penetrate into the film interior and even make it all the way to the buried interface of CsPbI3 perovskite films, while the BF4- anions, with largely different properties from I- anions, mainly anchor on the film surface. Consequently, virtually all the defects at the surface, buried interface and grain boundaries of CsPbI3 perovskite films are effectively healed, leading to significantly improved film quality, enhanced phase stability, optimized energy level alignment and promoted carrier transport. With these films, the fabricated CsPbI3 PSCs based on carbon electrode (C-PSCs) achieve an efficiency of 18.27%, which is among the highest-reported values for inorganic C-PSCs, and stability of 500 h at 85 °C with 65% efficiency maintenance.
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Affiliation(s)
- Hailiang Wang
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Qixian Zhang
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Zedong Lin
- Guangdong Provincial Key Lab of Nano-Micro Materials Research, School of Advanced Materials, Shenzhen Graduate School, Peking University, Shenzhen 518055, China; Institute of Biomedical Engineering, Shenzhen Bay Laboratory, Shenzhen 518107, China
| | - Huicong Liu
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Xiaozhen Wei
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Yongfa Song
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Chunyu Lv
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Weiping Li
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Liqun Zhu
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Kexiang Wang
- School of Chemistry, Beihang University, Beijing 100191, China
| | - Zhenhua Cui
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Experimental Center of Advanced Materials, School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Lan Wang
- School of Internet of Things Engineering, Jiangnan University, Wuxi 214122, China
| | - Changqing Lin
- School of Physical Science and Technology, Guangxi University, Nanning 530004, China
| | - Penggang Yin
- School of Chemistry, Beihang University, Beijing 100191, China
| | - Tinglu Song
- Experimental Center of Advanced Materials, School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Yang Bai
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Experimental Center of Advanced Materials, School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, China.
| | - Qi Chen
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Experimental Center of Advanced Materials, School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Shihe Yang
- Guangdong Provincial Key Lab of Nano-Micro Materials Research, School of Advanced Materials, Shenzhen Graduate School, Peking University, Shenzhen 518055, China; Institute of Biomedical Engineering, Shenzhen Bay Laboratory, Shenzhen 518107, China.
| | - Haining Chen
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China.
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Zhang Z, Zhai W, Li G, Zheng W, Li X, Huang L, Chen L, Lin L, Yuan G, Yan Z, Liu JM. Performance Enhancement of Tin-Based Perovskite Photodetectors through Bifunctional Cesium Fluoride Engineering. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38437709 DOI: 10.1021/acsami.3c17687] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/06/2024]
Abstract
Tin halide perovskites are rising as promising candidates for next-generation optoelectronic materials due to their good optoelectronic properties and relatively low toxicity. However, the high defect density and the easy oxidation of Sn2+ have limited their optoelectronic performance. Herein, we report the treatment of the FASnI3 (formamidinium tin, FA) perovskite film by a bifunctional cesium fluoride (CsF) additive, which improves the film quality and significantly enhances the photoelectric performance. The responsivity of the perovskite-based photodetector (PD) with an optimal CsF concentration of 15% is over 60 times larger than that of the PD without CsF. It indicates that both the Cs substitution and the fluoride anion additive from CsF inhibit the oxidation of Sn2+, optimize the crystal growth, and passivate the defects, demonstrating the dual roles of the CsF additive in improving the photoelectric performance. This work offers valuable insights into the additive selection for developing high-quality tin-based perovskite films and devices.
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Affiliation(s)
- Zhihang Zhang
- National Laboratory of Solid-State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Wenjing Zhai
- National Laboratory of Solid-State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Guangyuan Li
- National Laboratory of Solid-State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Wenhao Zheng
- National Laboratory of Solid-State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Xinyu Li
- National Laboratory of Solid-State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Lin Huang
- National Laboratory of Solid-State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Liufang Chen
- National Laboratory of Solid-State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Lin Lin
- Department of Applied Physics, College of Science, Nanjing Forestry University, Nanjing 210037, China
| | - Guoliang Yuan
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Zhibo Yan
- National Laboratory of Solid-State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Jun-Ming Liu
- National Laboratory of Solid-State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- Institute for Advanced Materials, Hubei Normal University, Huangshi 435002, Hubei, China
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