Deciphering Vacancy Defect Evolution of 2D MoS2 for Reliable Transistors

Toward Ideal Low-Frequency Noise in Monolayer CVD MoS2 FETs: Influence of van der Waals Junctions and Sulfur Vacancy Management

The pursuit of sub-1-nm field-effect transistor (FET) channels within 3D semiconducting crystals faces challenges due to diminished gate electrostatics and increased charge carrier scattering. 2D semiconductors, exemplified by transition metal dichalcogenides, provide a promising alternative. However, the non-idealities, such as excess low-frequency noise (LFN) in 2D FETs, present substantial hurdles to their realization and commercialization. In this study, ideal LFN characteristics in monolayer MoS2 FETs are attained by engineering the metal-2D semiconductor contact and the subgap density of states (DOS). By probing non-ideal contact resistance effects using CuS and Au electrodes, it is uncovered that excess contact noise in the high drain current (ID) region can be substantially reduced by forming a van der Waals junction with CuS electrodes. Furthermore, thermal annealing effectively mitigates sulfur vacancy-induced subgap density of states (DOS), diminishing excess noise in the low ID region. Through meticulous optimization of metal-2D semiconductor contacts and subgap DOS, alignment of 1/f noise with the pure carrier number fluctuation model is achieved, ultimately achieving the sought-after ideal LFN behavior in monolayer MoS2 FETs. This study underscores the necessity of refining excess noise, heralding improved performance and reliability of 2D electronic devices.

A comparative study on the linear scaling relations for the diffusion of S-vacancies on MoS2 and WS2

This work uses density functional theory (DFT) calculations and kinetic Monte Carlo (kMC) simulations to compare the diffusion of S-vacancies on defective MoS2 and WS2, two structures that are often discussed as catalysts. Similar to what has been discussed for MoS2, the vacancy diffusion barriers on WS2 also follow Brønsted-Evans-Polanyi (BEP) type linear scaling relations. The vacancy diffusion kinetics is discussed at the example of a large vacancy cluster consisting of 37 unoccupied sites in direct vicinity and how its structure changes with time. Using barriers estimated via linear scaling relations as input for the kMC simulations yields results that qualitatively agree with results calculated self-consistently at DFT level. As the diffusion barriers for WS2 are significantly higher than those for MoS2, the vacancy diffusion on WS2 is poorly described by the linear scaling relations derived from MoS2 and vice versa. This work further shows that one needs DFT level barriers of about 40% of all S-vacancy diffusion processes on a material to derive sufficiently reliable linear scaling relations. This means that computational costs for future studies may be reduced by only explicitly computing one fraction of the diffusion barriers while estimating the remaining ones via linear scaling. However, in this case, one would lack information about the partition function of the transition states, which are needed for calculating the rate constants. Thus, we have also proposed a scheme to estimate the contribution of the partition functions based only on the initial state's vibrational modes.

Nanoporous MoS2 Field-Effect Transistor Based Artificial Olfaction: Achieving Enhanced Volatile Organic Compound Detection Inspired by the Drosophila Olfactory System

Olfaction, a primal and effective sense, profoundly impacts our emotions and instincts. This sensory system plays a crucial role in detecting volatile organic compounds (VOCs) and realizing the chemical environment. Animals possess superior olfactory systems compared to humans. Thus, taking inspiration from nature, artificial olfaction aims to achieve a similar level of excellence in VOC detection. In this study, we present the development of an artificial olfaction sensor utilizing a nanostructured bio-field-effect transistor (bio-FET) based on transition metal dichalcogenides and the Drosophila odor-binding protein LUSH. To create an effective sensing platform, we prepared a hexagonal nanoporous structure of molybdenum disulfide (MoS2) using block copolymer lithography and selective etching techniques. This structure provides plenty of active sites for the integration of the LUSH protein, enabling enhanced binding with ethanol (EtOH) for detection purposes. The coupling of the biomolecule with EtOH influences the bio-FETs potential, which generates indicative electrical signals. By mimicking the sniffing techniques observed in Drosophila, these bio-FETs exhibit an impressive limit of detection of 10-6% for EtOH, with high selectivity, sensitivity, and detection ability even in realistic environments. This bioelectric sensor demonstrates substantial potential in the field of artificial olfaction, offering advancements in VOC detection.