Atomistic Mechanisms of Chemical Mechanical Polishing of a Cu Surface in Aqueous H2O2: Tight-Binding Quantum Chemical Molecular Dynamics Simulations

Insights into Interfacial Mechanism of CeO2/Silicon and Atomic-Scale Removal Process during Chemo-Mechanical Grinding of Silicon

Chemo-mechanical grinding (CMG) is a valid processing method to achieve a low-damage surface of silicon. However, the atomic interfacial mechanism during the CMG is still unclear. Herein, the CMG process of silicon was investigated using first principles and frictional wear tests in which the effects of pressure and speed on the interfacial reaction were comprehensively analyzed. Simulations showed that the formation and breakage of chemical bonds occurred at the CeO2/silicon interface during CMG, and the newly formed chemical bonds were stronger than those on the silicon surface. Also, it was found that the pressure and speed improved the materials removal rate by means of accelerating the interfacial chemical reactions, which is also verified by frictional wear tests. This study provides new insights into the atomic interfacial mechanism during silicon CMG.

The Boundary between Two Modes of Gas Evolution: Oscillatory (H2 and O2) and Conventional Redox (O2 Only), in the Hydrocarbon/H2O2/Cu(II)/CH3CN System

During the oxidation of hydrocarbons using hydrogen peroxide solutions, the evolution of gaseous oxygen is a side and undesirable process, in which the consumption of the oxidizer is not associated with the formation of target products. Therefore, no attention is paid to the systematic study of the chemical composition of the gas and the mechanisms of its formation. Filling this gap, the authors discovered a number of new, previously unidentified, interesting facts concerning both gas evolution and the oxidation of hydrocarbons. In a 33% H2O2/Cu2Cl4·2DMG/CH3CN system, where DMG is dimethylglyoxime (Butane-2,3-dione dioxime), and is at 50 °C, evidence of significant evolution of gaseous hydrogen, along with the evolution of gaseous oxygen was found. In the authors’ opinion, which requires additional verification, the ratio of gaseous hydrogen and oxygen in the discussed catalytic system can reach up to 1:1. The conditions in which only gaseous oxygen is formed are selected. Using a number of oxidizable hydrocarbons with the first adiabatic ionization potentials (AIPs) of a wide range of values, it was found that the first stage of such a process of evolving only gaseous oxygen was the single electron transfer from hydrogen peroxide molecules to trinuclear copper clusters with the formation, respectively, of hydrogen peroxide radical cations H2O2•+ and radical anions Cu3Cl5•− (AIP = 5 eV). When the conditions for the implementation of such a single electron transfer mechanism are exhausted, the channel of decomposition of hydrogen peroxide molecules into gaseous hydrogen and oxygen is switched on, which is accompanied by the transition of the system to an oscillatory mode of gas evolution. In some cases, the formation of additional amounts of gaseous products is provided by the catalytically activated decomposition of water molecules into hydrogen and oxygen after the complete consumption of hydrogen peroxide molecules in the reaction of gaseous oxygen evolution. The adiabatic electron affinity of various forms of copper molecules involved in chemical processes is calculated by the density functional theory method.

Atomic-level flatness on oxygen-free copper surface in lapping and chemical mechanical polishing

Oxygen-free copper (OFC) serves as a core component of high-end manufacturing, and requires high surface quality. It is always a significant challenge to manufacture high-quality atomic-level surfaces. In this study, SiO₂ nanospheres with good dispersibility were prepared and a late-model environmentally friendly chemical mechanical polishing (CMP) slurry was developed. The CMP slurry consists of SiO₂ nanospheres, CeO₂ nanospheres, H₂O₂, NaHCO₃, polyaspartic acid and deionized water. After CMP, the average roughness (Sa) of the OFC wafer reached 0.092 nm with an area of 50 × 50 μm². Atomic-level flatness on the oxygen-free copper surface was acquired, which has never been reported before. Moreover, the mechanical removal mechanism of abrasive particles and the chemical reactions during lapping and CMP are proposed in detail. The thickness and composition of the damaged layer after lapping and polishing were analyzed. The lapping-damaged layer consists of a lattice distortion region, moiré fringes, grain boundary, superlattice and edge dislocations, and the polishing-damaged layer contains a handful of stacking faults with single-layer or multi-layer atoms. The chemical action involves three reactions: oxidation, corrosion and chelation. The processing method and its mechanistic explanation pave the way for the fabrication of high-performance OFC surfaces for use in vacuum, aerospace, military and electronic industries.

Role of Interfacial Bonding in Tribochemical Wear

Tribochemical wear of contact materials is an important issue in science and engineering. Understanding the mechanisms of tribochemical wear at an atomic scale is favorable to avoid device failure, improve the durability of materials, and even achieve ultra-precision manufacturing. Hence, this article reviews some of the latest developments of tribochemical wear of typical materials at micro/nano-scale that are commonly used as solid lubricants, tribo-elements, or structural materials of the micro-electromechanical devices, focusing on their universal mechanisms based on the studies from experiments and numerical simulations. Particular focus is given to the fact that the friction-induced formation of interfacial bonding plays a critical role in the wear of frictional systems at the atomic scale.

Atom-by-Atom and Sheet-by-Sheet Chemical Mechanical Polishing of Diamond Assisted by OH Radicals: A Tight-Binding Quantum Chemical Molecular Dynamics Simulation Study

Ultraflat and damage-free single-crystal diamond is a promising material for use in electronic devices such as field-effect transistors. Diamond surfaces are conventionally prepared by the chemical mechanical polishing (CMP) method, although the CMP efficiency remains a critical issue owing to the extremely high hardness of diamond. Recently, OH radicals have been demonstrated to be potentially useful for improving the CMP efficiency for diamond; however, the underlying mechanisms are still elusive. In this work, we applied our previously developed CMP-specialized tight-binding quantum chemical molecular dynamics simulator to comprehensively elucidate the CMP mechanisms of diamond assisted by OH radicals. Our simulation results indicate that the diamond surface is oxidized by reactions with OH radicals and then a concomitant surface reconstruction takes place due to the distorted and unstable nature of the oxidized diamond surface structure. Furthermore, we interestingly reveal that the reconstruction of the diamond surface ultimately leads to two distinct removal mechanisms: (i) gradual atom-by-atom removal through the desorption of gaseous molecules (e.g., CO₂ and H₂CO₃) and (ii) drastic sheet-by-sheet removal through the exfoliation of graphitic ring structures. Hence, we propose that promoting the oxidation-induced graphitization of the diamond surface may provide a route to further improving the CMP efficiency.

Atomic-Level Material Removal Mechanisms of Si(110) Chemical Mechanical Polishing: Insights from ReaxFF Reactive Molecular Dynamics Simulations

Reactive molecular dynamics (ReaxFF) simulations are performed to explore the atomistic mechanism of chemical mechanical polishing (CMP) processes on a Si(110) surface polished with an a-SiO₂ particle. The Si surface is oxidized by reacting with water before the CMP process, and the O atoms of the oxidized Si surface mainly exist in the form of Si-O- dangling bonds and Si-O-Si bonds. In the CMP process, the insertion of O atoms into the surface, the formation of interfacial Si-O-Si and Si-Si bridge bonds, and the adsorption of H atoms on the surface-saturated Si atoms can all cause the surface bond breakage and even the Si atomic removal. The contributions of the four different kinds of tribochemical wear mechanisms to the surface wear decrease in turn and are much larger than that of mechanical wear. The results indicate that the material removal in the actual Si CMP process is the combined results of multiple atomic-level wear mechanisms. Furthermore, we find that the oxide layer of the Si surface plays an important role in the surface wear mainly by providing O atoms to insert into the surface, rather than by providing additional reaction pathways to form interfacial Si-O-Si bridge bonds. This work provides new and further insights into the process and mechanism of silicon removal during CMP.

Cooperative roles of chemical reactions and mechanical friction in chemical mechanical polishing of gallium nitride assisted by OH radicals: tight-binding quantum chemical molecular dynamics simulations

Chemical mechanical polishing (CMP) of Ga-face GaN is accelerated by the chemical reactions with OH radicals.

Molecular Simulation on the Thermal Stability of Meta-Aramid Insulation Paper Fiber at Transformer Operating Temperature

The influence of the thermal field of a transformer during operation on the thermal stability of meta-aramid insulation paper was studied through molecular dynamics simulations. Models of the crystalline and amorphous regions of meta-aramid fibers were constructed using known parameters. The model of the crystalline area was verified by comparing X-ray diffraction results with experimental data. The reasonableness of the simulation results was judged by the variation of energy, temperature, density, and cell size in relation to the dynamic time. The molecular dynamics simulations revealed that the modulus values in the crystalline regions were two to three times higher than those in the amorphous regions at various temperatures. In addition, the incompressibility, rigidity, deformation resistance, plasticity, and toughness of the crystalline regions were obviously higher than those of amorphous regions, whereas the toughness of the amorphous regions was better than that of the crystalline regions. The mechanical parameters of both the crystalline and amorphous regions of meta-aramid fibers were affected by temperature, although the amorphous regions were more sensitive to temperature than the crystalline regions. The molecular chain motion in the crystalline regions of meta-aramid fibers increased slightly with temperature, whereas that of the amorphous regions was more sensitive to temperature. Analyzing hydrogen bonding revealed that long-term operation at high temperature may destroy the structure of the crystalline regions of meta-aramid fibers, degrading the performance of meta-aramid insulation paper. Therefore, increasing the crystallinity and lowering the transformer operating temperature may improve the thermal stability of meta-aramid insulation paper. However, it should be noted that increasing the crystallinity of insulation paper may lower its toughness. These study results lay a good foundation for further exploration of the ways to improve the performance of meta-aramid insulation paper.