Glucose Sensing Using Functionalized Amorphous In-Ga-Zn-O Field-Effect Transistors

High-performance electrolyte-gated amorphous InGaZnO field-effect transistor for label-free DNA sensing

Accurate, convenient, label-free, and cost-effective biomolecules detection platforms are currently in high demand. In this study, we showcased the utilization of electrolyte-gated InGaZnO field-effect transistors (IGZO FETs) featuring a large on-off current ratio of over 106 and a low subthreshold slope of 78.5 mV/dec. In the DNA biosensor, the modification of target DNA changed the effective gate voltage of IGZO FETs, enabling an impressive low detection limit of 0.1 pM and a wide linear detection range from 0.1 pM to 1 μM. This label-free detection method also exhibits high selectivity, allowing for the discrimination of single-base mismatch. Furthermore, the reuse of gate electrodes and channel films offers cost-saving benefits and simplifies device fabrication processes. The electrolyte-gated IGZO FET biosensor presented in this study shows great promise for achieving low-cost and highly sensitive detection of various biomolecules.

Opportunities of Electronic and Optical Sensors in Autonomous Medical Plasma Technologies

Low temperature plasma technology is proving to be at the frontier of emerging medical technologies with real potential to overcome escalating healthcare challenges including antimicrobial and anticancer resistance. However, significant improvements in efficacy, safety, and reproducibility of plasma treatments need to be addressed to realize the full clinical potential of the technology. To improve plasma treatments recent research has focused on integrating automated feedback control systems into medical plasma technologies to maintain optimal performance and safety. However, more advanced diagnostic systems are still needed to provide data into feedback control systems with sufficient levels of sensitivity, accuracy, and reproducibility. These diagnostic systems need to be compatible with the biological target and to also not perturb the plasma treatment. This paper reviews the state-of-the-art electronic and optical sensors that might be suitable to address this unmet technological need, and the steps needed to integrate these sensors into autonomous plasma systems. Realizing this technological gap could facilitate the development of next-generation medical plasma technologies with strong potential to yield superior healthcare outcomes.

Graphene electrochemical transistor incorporated with gel electrolyte for wearable and non-invasive glucose monitoring

With the rapid development of wearable electronic devices, health monitoring is undergoing a fundamental shift from hospital-centered treatment to patient-centered diagnosis. Solution-gated graphene transistors provide an effective platform for developing high-sensitivity wearable devices due to their unique signal amplification, low energy consumption, and compatibility for miniaturization. However, it is still a major challenge to perform real-time sweat composition monitoring directly on the dry skin surface. In this work, a skin-based flexible gel electrolyte graphene transistor (GEGT) was successfully designed and fabricated for glucose detection, consisting of a gate electrode decorated with Au nanoparticles modified reduced graphene oxide (AuNPs/RGO) nanocomposites and a monolayer graphene channel. Glycerin gel was used to replace the traditional liquid electrolyte, not only could better fit the human skin, but also play the role of fluid collection, providing stable testing conditions for the sensor. Based on the high electron mobility of graphene channel and the excellent electrocatalytic performance of AuNPs/RGO nanocomposites, the constructed GEGT sensor exhibits excellent sensing performance for glucose with good selectivity, low operating voltage (0.5 V), wide detection range (10 nM - 25 mM), and low detection limit (10 nM). The device maintains stable performance after up to 1000 bending cycles with a bending radius of 4 mm. In addition, the GEGT sensor displays good accuracy in sweat detection and sensitive dynamic response during actual wearing, which provides a guarantee for the construction of wearable transistor devices and real-time health tracking.

Intelligent wearable devices based on nanomaterials and nanostructures for healthcare

Emerging classes of flexible electronic sensors as alternatives to conventional rigid sensors offer a powerful set of capabilities for detecting and quantifying physiological and physical signals from human skin in personal healthcare. Unfortunately, the practical applications and commercialization of flexible sensors are generally limited by certain unsatisfactory aspects of their performance, such as biocompatibility, low sensing range, power supply, or single sensory function. This review intends to provide up-to-date literature on wearable devices for smart healthcare. A systematic review is provided, from sensors based on nanomaterials and nanostructures, algorithms, to multifunctional integrated devices with stretchability, self-powered performance, and biocompatibility. Typical electromechanical sensors are investigated with a specific focus on the strategies for constructing high-performance sensors based on nanomaterials and nanostructures. Then, the review emphasizes the importance of tailoring the fabrication techniques in order to improve stretchability, biocompatibility, and self-powered performance. The construction of wearable devices with high integration, high performance, and multi-functionalization for multiparameter healthcare is discussed in depth. Integrating wearable devices with appropriate machine learning algorithms is summarized. After interpretation of the algorithms, intelligent predictions are produced to give instructions or predictions for smart implementations. It is desired that this review will offer guidance for future excellence in flexible wearable sensing technologies and provide insight into commercial wearable sensors.

Nanomaterial-Based Biosensors using Field-Effect Transistors: A Review

Field-effect transistor biosensors (Bio-FET) have attracted great interest in recent years owing to their distinctive properties like high sensitivity, good selectivity, and easy integration into portable and wearable electronic devices. Bio-FET performance mainly relies on the constituent components such as the bio-recognition layer and the transducer, which ensures device stability, sensitivity, and lifetime. Nanomaterial-based Bio-FETs are excellent candidates for biosensing applications. This review discusses the basic concepts, function, and working principles of Bio-FETs, and focuses on the progress of recent research in Bio-FETs in the sensing of neurotransmitters, glucose, nucleic acids, proteins, viruses, and cancer biomarkers using nanomaterials. Finally, challenges in the development of Bio-FETs, as well as an outlook on the prospects of nano Bio-FET-based sensing in various fields, are discussed.

Transistor-Based Biomolecule Sensors: Recent Technological Advancements and Future Prospects

Transistor-based sensors have been widely recognized to be highly sensitive and reliable for point-of-care/bed-side diagnosis. In this line, a range of cutting-edge technologies has been generated to elevate the role of transistors for biomolecule detection. Detection of a wide range of clinical biomarkers has been reported using various configurations of transistors. The inordinate sensitivity of transistors to the field-effect imparts high sensitivity toward wide range of biomolecules. This overview has gleaned the present achievements with the technological advancements using high performance transistor-based sensors. This review encloses transistors incorporated with a variety of functional nanomaterials and organic elements for their excellence in selectivity and sensitivity. In addition, the technological advancements in fabrication of these microdevices or nanodevices and functionalization of the sensing elements have also been discussed. The technological gap in the realization of sensors in transistor platforms and the resulted scope for research has been discussed. Finally, foreseen technological advancements and future research perspectives are described.

Low dimensional materials for glucose sensing

Biosensors are essential components for effective healthcare management. Since biological processes occur on molecular scales, nanomaterials and nanosensors intrinsically provide the most appropriate landscapes for developing biosensors. Low-dimensional materials have the advantage of offering high surface areas, increased reactivity and unique physicochemical properties for efficient and selective biosensing. So far, nanomaterials and nanodevices have offered significant prospects for glucose sensing. Targeted glucose biosensing using such low-dimensional materials enables much more effective monitoring of blood glucose levels, thus providing significantly better predictive diabetes diagnostics and management. In this review, recent advances in using low dimensional materials for sensing glucose are summarized. Sensing fundamentals are discussed, as well as invasive, minimally-invasive and non-invasive sensing methods. The effects of morphological characteristics and size-dependent properties of low dimensional materials are explored for glucose sensing, and the key performance parameters such as selectivity, stability and sensitivity are also discussed. Finally, the challenges and future opportunities that low dimensional materials can offer for glucose sensing are outlined.

Non-invasive detection of glucose via a solution-gated graphene transistor

Owing to its high sensitivity, a solution-gated graphene transistor has rapidly emerged as a cutting edge technology in electrochemical sensing. In this work, composites of gold nanoparticles and reduced graphene oxide were synthesized on a glassy carbon electrode by using the electrodeposition method. A modified glassy carbon electrode was used as the gate electrode and assembled into the solution-gated graphene transistor device along with the graphene channel for a non-invasive glucose detection. The sensing mechanism was based on the change in current in the channel of the device caused by the addition of glucose, of which electro-oxidation on the surface of the gold nanoparticles and reduced graphene oxide led to a change in equivalent gate voltage, and consequently, affected the channel carrier concentration. The self-amplification effect of transistors was utilized in our sensors, which resulted in a detection limit that was 10 times lower than those of conventional electrochemical sensors. Compared to traditional enzymatic transistor sensors, the novel solution-gated graphene transistor nonenzymatic sensors based on gold nanoparticles and reduced graphene oxide demonstrated significant sensing advantages, such as a simple structure, wide linear range from 10 μM to 400 μM and 400 μM to 31 mM, and low detection limit down to 4 μM. The chemicals coexisting in human sweat e.g. sodium chloride, urea, and lactic acid imposed no distinct interference for the glucose detection. Therefore, we achieved a non-invasive detection of glucose in the artificial sweat samples with satisfactory sensing results. This work demonstrates an effective route for non-invasive glucose testing in practical clinical diagnosis by using nonenzymatic, solution-gated graphene transistor devices.

Vertically grown zinc oxide nanorods functionalized with ferric oxide for in vivo and non-enzymatic glucose detection

An enzyme-free glucose sensor based on vertically grown zinc oxide nanorods (NRs) functionalized with ferric oxide (Fe₂O₃) is investigated. The well-aligned and high density ZnO NRs were synthesized on an FTO/glass substrate by a sol-gel and hydrothermal growth method. A dip-coating technique was utilized to modify the surface of the as-grown ZnO NRs with Fe₂O₃. The immobilized surface was coated with a layer of nafion membrane. The fabricated glucose sensor was characterized amperometrically at room temperature using three electrodes stationed in the phosphate buffer solution, where ZnO NRs/Fe₂O₃/nafion membrane was the sensing or working electrode, and platinum plate and silver/silver chloride were used as the counter and reference electrodes, respectively. The proposed non-enzymatic and modified glucose sensor exhibited a high sensitivity in the order of 0.052 μA cm^-2 (mg/dL)^-1, a lower detection limit of around 0.95 mmol L^-1, a sharp and fast response time of ∼1 s, and a linear response to changes in glucose concentrations from 100-400 mg dL^-1. The linear amperometric response of the sensor covers the physiological and clinical interest of glucose levels for diabetic patients. The device continues to function accurately after multiple measurements with a good reproducibility. The proposed glucose sensor is expected to be used clinically for in vivo monitoring of glucose.

Recent advances in nanowires-based field-effect transistors for biological sensor applications

Nanowires (NWs)-based field-effect transistors (FETs) have attracted considerable interest to develop innovative biosensors using NWs of different materials (i.e. semiconductors, polymers, etc.). NWs-based FETs provide significant advantages over the other bulk or non-NWs nanomaterials-based FETs. As the building blocks for FET-based biosensors, one-dimensional NWs offer excellent surface-to-volume ratio and are more suitable and sensitive for sensing applications. During the past decade, FET-based biosensors are smartly designed and used due to their great specificity, sensitivity, and high selectivity. Additionally, they have the advantage of low weight, low cost of mass production, small size and compatible with commercial planar processes for large-scale circuitry. In this respect, we summarize the recent advances of NWs-based FET biosensors for different biomolecule detection i.e. glucose, cholesterol, uric acid, urea, hormone, proteins, nucleotide, biomarkers, etc. A comparative sensing performance, present challenges, and future prospects of NWs-based FET biosensors are discussed in detail.

Interfacial Chemistry-Induced Modulation of Schottky Barrier Heights: In Situ Measurements of the Pt-Amorphous Indium Gallium Zinc Oxide Interface Using X-ray Photoelectron Spectroscopy

A method to understand the role of interfacial chemistry on the modulation of Schottky barrier heights for platinum and amorphous indium gallium zinc oxide (a-IGZO) interfaces is demonstrated through thermal processing and background ambient pressure control. In situ X-ray photoelectron spectroscopy was used to characterize the interfacial chemistries that modulate barrier heights in this system. The primary changes were a significant chemical reduction of indium, from In³⁺ to In⁰, that occurs during deposition of Pt on to the a-IGZO surface in ultrahigh vacuum. Postannealing and controlling the background ambient O₂ pressure allows further tuning of the reduction of indium and the corresponding Schottky barrier heights from 0.17 to 0.77 eV. Understanding the detailed interfacial chemistries at Pt/a-IGZO interfaces may allow for improved electronic device performance, including Schottky diodes, memristors, and metal-semiconductor field-effect transistors.

Analysis of the Sensing Properties of a Highly Stable and Reproducible Ozone Gas Sensor Based on Amorphous In-Ga-Zn-O Thin Film

In this study, the sensing properties of an amorphous indium gallium zinc oxide (a-IGZO) thin film at ozone concentrations from 500 to 5 ppm were investigated. The a-IGZO thin film showed very good reproducibility and stability over three test cycles. The ozone concentration of 60–70 ppb also showed a good response. The resistance change (ΔR) and sensitivity (S) were linearly dependent on the ozone concentration. The response time (T_90-res), recovery time (T_90-rec), and time constant (τ) showed first-order exponential decay with increasing ozone concentration. The resistance–time curve shows that the maximum resistance change rate (dRg/dt) is proportional to the ozone concentration during the adsorption. The results also show that it is better to sense rapidly and stably at a low ozone concentration using a high light intensity. The ozone concentration can be derived from the resistance change, sensitivity, response time, time constant (τ), and first derivative function of resistance. However, the time of the first derivative function of resistance is shorter than other parameters. The results show that a-IGZO thin films and the first-order differentiation method are promising candidates for use as ozone sensors for practical applications.

Modulating Thin Film Transistor Characteristics by Texturing the Gate Metal

The development of reliable, high performance integrated circuits based on thin film transistors (TFTs) is of interest for the development of flexible electronic circuits. In this work we illustrate the modulation of TFT transconductance via the texturing of the gate metal created by the addition of a conductive pattern on top of a planar gate. Texturing results in the semiconductor-insulator interface acquiring a non-planar geometry with local variations in the radius of curvature. This influences various TFT parameters such as the subthreshold slope, gate voltage at the onset of conduction, contact resistance and gate capacitance. Specific studies are performed on textures based on periodic striations oriented along different directions. Textured TFTs showed upto ±40% variation in transconductance depending on the texture orientation as compared to conventional planar gate TFTs. Analytical models are developed and compared with experiments. Gain boosting in common source amplifiers based on textured TFTs as compared to conventional TFTs is demonstrated.

Quasi-Two-Dimensional Metal Oxide Semiconductors Based Ultrasensitive Potentiometric Biosensors

Ultrasensitive field-effect transistor-based biosensors using quasi-two-dimensional metal oxide semiconductors were demonstrated. Quasi-two-dimensional low-dimensional metal oxide semiconductors were highly sensitive to electrical perturbations at the semiconductor-bio interface and showed competitive sensitivity compared with other nanomaterial-based biosensors. Also, the solution process made our platform simple and highly reproducible, which was favorable compared with other nanobioelectronics. A quasi-two-dimensional In₂O₃-based pH sensor showed a small detection limit of 0.0005 pH and detected the glucose concentration at femtomolar levels. Detailed electrical characterization unveiled how the device's parameters affect the biosensor sensitivity, and lowest detectable charge was extrapolated, which was consistent with the experimental data.

Enzyme immobilization on metal oxide semiconductors exploiting amine functionalized layer

The immobilization of glucose oxidase (GOx) on indium-gallium zinc oxide (IGZO) thin films is studied in order to fabricate a high performance biosensor.

A field effect glucose sensor with a nanostructured amorphous In-Ga-Zn-O network

Amorphous indium gallium zinc oxide (IGZO) field effect transistors (FETs) are a promising technology for a wide range of electronic applications. Herein, we fabricated and characterized FETs with a nanostructured IGZO network as a sensing transducer. The IGZO was patterned using colloidal lithography and electrohydrodynamic printing, where an 8 μm wide nanostructured close-packed hexagonal IGZO network was obtained. Electrical characterization of the nanostructured IGZO network FET demonstrated a drain-source current on-off ratio of 6.1 × 10³ and effective electron mobilities of 3.6 cm² V^-1 s^-1. The nanostructured IGZO network was functionalized by aminosilane groups with cross-linked glucose oxidase. The devices demonstrated a decrease in drain-source conductance and a more positive V_ON with increasing glucose concentration. These changes are ascribed to the acceptor-like surface states associated with positively charged aminosilane groups attached to the nanostructured IGZO surface. Continuous monitoring of the drain-source current indicates a stepwise and fully reversible response to glucose concentrations with a short response time. The specific catalytic reaction between the GOx enzyme and glucose eliminates interference from acetaminophen/ascorbic acid. We demonstrate that nanostructured IGZO FETs have improved sensitivity compared to non-nanostructured IGZO for sensing glucose and can be potentially extended to other biosensor technologies.