Photo-Patternable ZnO Thin Films Based on Cross-Linked Zinc Acrylate for Organic/Inorganic Hybrid Complementary Inverters

The Role of Electron-Donating Subunits in Cross-Linked BODIPY Polymer Films

A new method for synthesizing cross-linked 4,4-difluoro-4-bora-3a,4a-diaza-s-indacenes (BODIPYs) using a radical-based thiol-ene click reaction is developed. This method is simple, efficient, and cost-effective, and it produces polymers with unique optical, electrochemical, and surface morphology properties. Significant blue shifts in absorption and photoinduced electron transfer in emissions are observed in the cross-linked BODIPY thin films. Cross-linking also leads to the restriction of conjugation, which results in the breakage of the terminal vinyl group, an increase in the oxidation potential, and a slight upshift in the HOMO position. As a result, the electrochemical band gap is widened from 1.88 to 1.94 eV for polymer bearing N,N-dimethylamino-BODIPY and from 1.97 to 2.02 eV for polymer bearing N,N-diphenylamino-BODIPY moieties. Monomer thin films form planar surfaces due to crystallinity, while amorphous cross-linked BODIPY polymers form more rough surfaces. Additionally, photopatterning on the film surface is successfully performed using different patterned masks. This new method for synthesizing cross-linked BODIPYs has the potential to be used in a variety of applications, including organic electronics, bioimaging, and photocatalysis.

Thermoelectrically Driven Dual-Mechanism Regulation on SERS and Application Potential for Rapid Detection of SARS-CoV-2 Viruses and Microplastics

Electric-induced surface-enhanced Raman scattering (E-SERS) has been widely studied for its flexible regulation of SERS after the substrate is prepared. However, the enhancement effect is not sufficiently high in the E-SERS technology reported thus far, and no suitable field of application exists. In this study, a highly sensitive thermoelectrically induced SERS substrate, Ag/graphene/ZnO (AGZ), was fabricated using ZnO nanoarrays (NRs), graphene, and Ag nanoparticles (NPs). Applying a temperature gradient to the ZnO NRs enhanced the SERS signals of the probe molecules by a factor of approximately 20. Theoretical and experimental results showed that the thermoelectric potential enables the simultaneous modulation of the Fermi energy level of graphene and the plasma resonance peak of Ag NPs, resulting in a double enhancement in terms of physical and chemical mechanisms. The AGZ substrate was then combined with a mask to create a wearable thermoelectrically enhanced SERS mask for collecting SARS-CoV-2 viruses and microplastics. Its SERS signal can be enhanced by the temperature gradient created between a body heat source (∼37 °C) and a cold environment. The suitability of this method for virus detection was also examined using a reverse transcription-polymerase chain reaction and SARS-CoV-2 virus antigen detection. This work offers new horizons for research of E-SERS, and its application potential for rapid detection of the SARS-CoV-2 virus and microplastics was also studied.

High performance enhancement-mode thin-film transistor with graphene quantum dot-decorated In2O3 channel layers

Due to the quantum confinement and edge effects, there has been ongoing enthusiasm to provide deep insight into graphene quantum dots (GQDs), serving as attractive semiconductor materials. To demonstrate the potential applications of GQDs in electronic devices, this work presents solution-processed high performance GQD-decorated In₂O₃ thin-film transistors (TFTs) based on ZrO₂ as gate dielectrics. GQDs-In₂O₃/ZrO₂ TFTs with optimized doping content have demonstrated high electrical performance and low operating voltage, including a larger field-effect mobility (μ_FE) of 34.02 cm² V⁻¹ s⁻¹, a higher I_on/I_off of 4.55 × 10⁷, a smaller subthreshold swing (SS) of 0.08 V dec⁻¹, a lower interfacial trap states (D_it) of 5.84 × 10¹¹ cm⁻² and threshold voltage shift of 0.07 V and 0.12 V under positive bias stress (PBS) and negative bias stress (NBS) for 3600 s, respectively. As a demonstration of complex logic applications, a resistor-loaded unipolar inverter based on GQDs-In₂O₃/ZrO₂ has been built, demonstrating full swing characteristic and high gain of 10.63. Low-frequency noise (LFN) characteristics of GQDs-In₂O₃/ZrO₂ TFTs have been presented and it was concluded that the noise source can be attributed to the fluctuations in mobility. As a result, it can be concluded that solution-derived GDQ-optimized oxide-based TFTs will manifest potential applications in electronic devices.

Due to the quantum confinement and edge effects, there has been ongoing enthusiasm to provide deep insight into graphene quantum dots (GQDs), serving as attractive semiconductor materials.

Tunicate-Inspired Photoactivatable Proteinic Nanobombs for Tumor-Adhesive Multimodal Therapy

Near-IR (NIR) light-responsive multimodal nanotherapeutics have been proposed to achieve improved therapeutic efficacy and high specificity in cancer therapy. However, their clinical application is still elusive due to poor biometabolization and short retention at the target site. Here, innovative photoactivatable vanadium-doped adhesive proteinic nanoparticles (NPs) capable of allowing biological photoabsorption and NIR-responsive anticancer therapeutic effects to realize trimodal photothermal-gas-chemo-therapy treatments in a highly biocompatible, site-specific manner are proposed. The photoactivatable tumor-adhesive proteinic NPs can enable efficient photothermal conversion via tunicate-inspired catechol-vanadium complexes as well as prolonged tumor retention by virtue of mussel protein-driven distinctive adhesiveness. The incorporation of a thermo-sensitive nitric oxide donor and doxorubicin into the photoactivatable adhesive proteinic NPs leads to synergistic anticancer therapeutic effects as a result of photothermal-triggered "bomb-like" multimodal actions. Thus, this protein-based phototherapeutic tumor-adhesive NPs have great potential as a spatiotemporally controllable therapeutic system to accomplish effective therapeutic implications for the complete ablation of cancer.

Hybrid Thin-Film Materials Combinations for Complementary Integration Circuit Implementation

Beyond conventional silicon, emerging semiconductor materials have been actively investigated for the development of integrated circuits (ICs). Considerable effort has been put into implementing complementary circuits using non-silicon emerging materials, such as organic semiconductors, carbon nanotubes, metal oxides, transition metal dichalcogenides, and perovskites. Whereas shortcomings of each candidate semiconductor limit the development of complementary ICs, an approach of hybrid materials is considered as a new solution to the complementary integration process. This article revisits recent advances in hybrid-material combination-based complementary circuits. This review summarizes the strong and weak points of the respective candidates, focusing on their complementary circuit integrations. We also discuss the opportunities and challenges presented by the prospect of hybrid integration.

Organic-based inverters: basic concepts, materials, novel architectures and applications

The review article covers the materials and techniques employed to fabricate organic-based inverter circuits and highlights their novel architectures, ground-breaking performances and potential applications.

Ultrahigh-Mobility and Solution-Processed Inorganic P-Channel Thin-Film Transistors Based on a Transition-Metal Halide Semiconductor

The development of p-channel devices with comparable electrical performances to their n-channel counterparts has been delayed due to the lack of p-type semiconductor materials and device optimization. In this present work, we successfully demonstrated p-channel inorganic thin-film transistors (TFTs) with high hole mobilities similar to the values of n-channel devices. To boost the device performance, the solution-processed copper iodide (CuI) semiconductor was gated by a solid polymer electrolyte. The electrolyte gating could realize electrical double layer (EDL) formation and a three-dimensional carrier transport channel and thus substantially increased charge accumulation in the channel region and realized a high mobility above 90 cm²/(V s) (45.12 ± 22.19 cm²/(V s) on average). In addition, due to the high-capacitance EDL formed by electrolyte gating, the CuI TFTs exhibited a low operation voltage below 0.5 V (V_th = -0.045 V) and a high ON current level of 0.7 mA with an ON/OFF ratio of 1.52 × 10³. We also evaluated the operational stabilities of CuI TFTs and the devices showed 80% retention under electrical/mechanical stress. All the active layers of the transistors were fabricated by solution processes at low temperatures (<100 °C), indicating their potential use for flexible, wearable, and high-performance electronic applications.

Solution-processed metal-oxide thin-film transistors: a review of recent developments

Driven by the rapid development of novel active-matrix displays, thin-film transistors (TFTs) based on metal-oxide (MO) semiconductors have drawn great attention during recent years. N-type MO TFTs manufactured through vacuum-based processes have the advantages of higher mobility compared to the amorphous silicon TFTs, better uniformity and lower processing temperature compared to the polysilicon TFTs, and visible light transparency which is suitable for transparent electronic devices, etc. However, the fabrication cost is high owing to the expensive and complicated vacuum-based systems. In contrast, solution process has the advantages of low cost, high throughput, and easy chemical composition control. In the first part of this review, a brief introduction of solution-processed MO TFTs is given, and the main issues and challenges encountered in this field are discussed. The recent advances in channel layer engineering to obtain the state-of-the-art solution-processed MO TFTs are reviewed and summarized. Afterward, a detailed discussion of the direct patterning methods is presented, including the direct photopatterning and printing techniques. Next, the effect of gate dielectric materials and their interfaces on the performance of the resulting TFTs are surveyed. The last topic is the various applications of solution-processed MO TFTs, from novel displays to sensing, memory devices, etc. Finally, conclusions are drawn and future expectations for solution-processed MO TFTs and their applications are described.

Solution-Based Micro- and Nanoscale Metal Oxide Structures Formed by Direct Patterning for Electro-Optical Applications

Due to their transparency and tunable electrical, optical, and magnetic properties, metal oxide thin films and structures have many applications in electro-optical devices. In recent years, solution processing combined with direct-patterning techniques such as micro-/nanomolding, inkjet printing, e-jet printing, e-beam writing, and photopatterning has drawn much attention because of the inexpensive and simple fabrication process that avoids using capital-intensive vacuum deposition systems and chemical etching. Furthermore, practical applications of solution direct-patterning techniques with metal oxide structures are demonstrated in thin-film transistors and biochemical sensors on a wide range of substrates. Since direct-patterning techniques enable low-cost fabrication of nanoscale metal oxide structures, these methods are expected to accelerate the development of nanoscale devices and systems based on metal oxide components in important application fields such as flexible electronics, the Internet of Things (IoT), and human health monitoring. Here, a review of the fabrication procedures, advantages, limitations, and applications of the main direct-patterning methods for making metal oxide structures is presented. The goal is to highlight the examples with the most promising perspective from the recent literature.

Combustion Synthesis of p-Type Transparent Conducting CuCrO2+x and Cu:CrOx Thin Films at 180 °C

Low-temperature solution processing of p-type transparent conducting oxides (TCOs) will open up new opportunities for applications on flexible substrates that utilize low-cost, large-area manufacturing. Here, we report a facile solution synthesis method that produces two p-type TCO thin films: copper chromium oxide and copper-doped chromium oxide. Using combustion chemistry, both films are solution processed at 180 °C, which is lower than most recent efforts. While adopting the same precursor preparation and annealing temperature, we find that annealing environment (solvent vapor vs open air) dictates the resulting film phase, hence the optoelectronic properties. The effect of annealing environment on the reaction mechanism is discussed. We further characterize the electronic, optical, and transport properties of the two materials, and compare the differences. Their applications in optoelectronic devices are successfully demonstrated in transparent p-n junction diodes and as hole transport layers in organic photovoltaic devices.

Flexible Organic/Inorganic Hybrid Field-Effect Transistors with High Performance and Operational Stability

The production of high-quality semiconducting nanostructures with optimized electrical, optical, and electromechanical properties is important for the advancement of next-generation technologies. In this context, we herein report on highly obliquely aligned single-crystalline zinc oxide nanosheets (ZnO NSs) grown via the vapor-liquid-solid approach using r-plane (01-12) sapphire as the template surface. The high structural and optical quality of as-grown ZnO NSs has been confirmed using high-resolution transmission electron microscopy and temperature-dependent photoluminescence, respectively. To assess the potential of our NSs as effective building materials in high-performance flexible electronics, we fabricate organic (parylene C)/inorganic (ZnO NS) hybrid field-effect transistor (FET) devices on flexible substrates using room-temperature assembly processes. Extraction of key FET performance parameters suggests that as-grown ZnO NSs can successfully function as excellent n-type semiconducting modules. Such devices are found to consistently show very high on-state currents (I_on) > 40 μA, high field-effect mobility (μ_eff) > 200 cm²/(V s), exceptionally high on/off current modulation ratio (I_on/off) of around 10⁹, steep subthreshold swing (s-s) < 200 mV/decade, very low hysteresis, and negligible threshold voltage shifts with prolonged electrical stressing (up to 340 min). The present study delivers a concept of integrating high-quality ZnO NS as active semiconducting elements in flexible electronic circuits.