Expanding the Repertoire of Molecular Linkages to Silicon: Si-S, Si-Se, and Si-Te Bonds

Porous silicon surface modification via a microwave-induced in situ cyclic disulfide (S-S) cleavage and Si-S bond formation

Porous silicon (pSi) materials have gained a great deal of attention from various research fields, and their surface-functionalization is one of the critical points for their applications. In this study, a new surface modification method of Si-H-terminated pSi materials via microwave-induced Si-S bond formation is disclosed. The silicon hydride (Si-H) functionality on the pSi surface could react with the 5-membered cyclic disulfide (S-S) compound (DL-α-lipoic acid in this study) by microwave-induced in situ S-S bond cleavage and Si-S bond formation. This surface chemistry is fast responsive (<10 min) and more efficient than other methods such as vortexing, heating stirring, or ultrasonication. The reaction maintains the primary porous structure of pSi materials including pSi wafer, pSi rugate filer, and pSi nanoparticles. An additional functional group such as carboxylic acid is demonstrated to be readily introducible on the pSi surface for further applications. Overall, this study has successfully demonstrated the porous silicon surface modification via a microwave-induced in situ cyclic disulfide (S-S) cleavage and Si-S bond formation.

Double-Faced Bond Coupling to Induce an Ultrastable Lithium/Li6PS5Cl Interface for High-Performance All-Solid-State Batteries

Sulfide-type solid electrolytes (SSEs) are supposed to be preferential candidates for all-solid-state Li metal batteries (ASSLMBs) due to their satisfactory Li⁺ conductivity and preferable mechanical stiffness. Nonetheless, the poor stability between the Li anode and SSEs and uncontrolled Li dendrite growth severely restrict their commercial application. Herein, an amphiphilic Li_xSiO_y-enriched solid electrolyte interphase (SEI) as a "Janus" layer was first introduced at the Li/SSEs interface, and it exhibited bond coupling reactivity with both the Li anode and SSEs by forming Li-S, Li-O-Si, and Si-S covalent bonds, which is called the pincer effect. In addition to the physical isolation of Li and SSEs to prevent side reactions between them, Li_xSiO_y with high ionic conductivity offers abundant and evenly distributed transport channels for fast Li⁺ migration. As evidenced by in situ microscopy, the high-strength anodic interface constructed by the pincer effect and in situ decomposition mentioned above is free from mechanical damage during the Li plating/stripping. As a result, the symmetric cells exert an outstanding cycling performance for over 2000 h at 0.2 mA cm^-2 and even 500 h at 0.5 mA cm^-2 without evident resistance growth. The artificial SEI layer with the pincer effect and its effective application in interfacial stabilization put forward a new perspective for the commercialization of ASSLMBs.

Angle-dependent strength of a single chemical bond by stereographic force spectroscopy

A wealth of chemical bonds and polymers have been studied with single-molecule force spectroscopy, usually by applying a force perpendicular to the anchoring surface. However, the direction-dependence of the bond strength lacks fundamental understanding. Here we establish stereographic force spectroscopy to study the single-bond strength for various pulling angles. Surprisingly, we find that the apparent bond strength increases with increasing pulling angle relative to the anchoring surface normal, indicating a sturdy mechanical anisotropy of a chemical bond. This finding can be rationalized by a fixed pathway for the rupture of the bond, resulting in an effective projection of the applied pulling force onto a nearly fixed rupture direction. Our study is fundamental for the molecular understanding of the role of the direction of force application in molecular adhesion and friction. It is also a prerequisite for the nanoscale tailoring of the anisotropic strength of bottom-up designed materials.

Stereographic force spectroscopy reveals that a chemical bond ruptures along a fixed pathway such that the apparent bond strength strongly depends on the angle of force application.

Cu-catalyzed efficient construction of S (Se)-containing functional organosilicon compounds

A Cu-catalyzed cascade reaction of four-membered silacyclobutanes (SCBs) and thiosulfonates to construct S (Se)-containing organosilicon compounds is described.

Silicon - single molecule - silicon circuits

In 2020, silicon - molecule - silicon junctions were fabricated and shown to be on average one third as conductive as traditional junctions made using gold electrodes, but in some instances to be even more conductive, and significantly 3 times more extendable and 5 times more mechanically stable. Herein, calculations are performed of single-molecule junction structure and conductivity pertaining to blinking and scanning-tunnelling-microscopy (STM) break junction (STMBJ) experiments performed using chemisorbed 1,6-hexanedithiol linkers. Some strikingly different characteristics are found compared to analogous junctions formed using the metals which, to date, have dominated the field of molecular electronics. In the STMBJ experiment, following retraction of the STM tip after collision with the substrate, unterminated silicon surface dangling bonds are predicted to remain after reaction of the fresh tips with the dithiol solute. These dangling bonds occupy the silicon band gap and are predicted to facilitate extraordinary single-molecule conductivity. Enhanced junction extendibility is attributed to junction flexibility and the translation of adsorbed molecules between silicon dangling bonds. The calculations investigate a range of junction atomic-structural models using density-functional-theory (DFT) calculations of structure, often explored at 300 K using molecular dynamics (MD) simulations. These are aided by DFT calculations of barriers for passivation reactions of the dangling bonds. Thermally averaged conductivities are then evaluated using non-equilibrium Green's function (NEGF) methods. Countless applications through electronics, nanotechnology, photonics, and sensing are envisaged for this technology.

Surface chemistry effects on work function, ionization potential and electronic affinity of Si(100), Ge(100) surfaces and SiGe heterostructures

We combine density functional theory and many body perturbation theory to investigate the electronic properties of Si(100) and Ge(100) surfaces terminated with halogen atoms (-I, -Br, -Cl, -F) and other chemical functionalizations (-H, -OH, -CH3) addressing the absolute values of their work function, electronic affinity and ionization potential. Our results point out that electronic properties of functionalized surfaces strongly depend on the chemisorbed species and much less on the surface crystal orientation. The presence of halogens at the surface always leads to an increment of the work function, ionization potential and electronic affinity with respect to fully hydrogenated surfaces. On the contrary, the presence of polar -OH and -CH3 groups at the surface leads to a reduction of the aforementioned quantities with respect to the H-terminated system. Starting from the work functions calculated for the Si and Ge passivated surfaces, we apply a simple model to estimate the properties of functionalized SiGe surfaces. The possibility of modulating the work function by changing the chemisorbed species and composition is predicted. The effects induced by different terminations on the band energy line-up profile of SiGe surfaces are then analyzed. Interestingly, our calculations predict a type-II band offset for the H-terminated systems and a type-I band offset for the other cases.

Spontaneous S-Si bonding of alkanethiols to Si(111)-H: towards Si-molecule-Si circuits

We report the synthesis of covalently linked self-assembled monolayers (SAMs) on silicon surfaces, using mild conditions, in a way that is compatible with silicon-electronics fabrication technologies. In molecular electronics, SAMs of functional molecules tethered to gold via sulfur linkages dominate, but these devices are not robust in design and not amenable to scalable manufacture. Whereas covalent bonding to silicon has long been recognized as an attractive alternative, only formation processes involving high temperature and/or pressure, strong chemicals, or irradiation are known. To make molecular devices on silicon under mild conditions with properties reminiscent of Au–S ones, we exploit the susceptibility of thiols to oxidation by dissolved O₂, initiating free-radical polymerization mechanisms without causing oxidative damage to the surface. Without thiols present, dissolved O₂ would normally oxidize the silicon and hence reaction conditions such as these have been strenuously avoided in the past. The surface coverage on Si(111)–H is measured to be very high, 75% of a full monolayer, with density-functional theory calculations used to profile spontaneous reaction mechanisms. The impact of the Si–S chemistry in single-molecule electronics is demonstrated using STM-junction approaches by forming Si–hexanedithiol–Si junctions. Si–S contacts result in single-molecule wires that are mechanically stable, with an average lifetime at room temperature of 2.7 s, which is five folds higher than that reported for conventional molecular junctions formed between gold electrodes. The enhanced “ON” lifetime of this single-molecule circuit enables previously inaccessible electrical measurements on single molecules.

Spontaneously formed Si–S bonds enable monolayer and single-molecule Si–molecule–Si circuits.

Modification of a H-terminated silicon surface by organic sulfide molecules: the mechanism and origin of reactivity

For the reactions of disulfide molecules (RSSR), the steric effect rather than the electronic effect of the R group is the main origin of the different reactivity. In the reactions of sulfide molecules (RSXR′, X = S, P, Si, O, N, C), charges on the S atom and dissociation energies of the S–X bonds have a great impact on the reactivity of these reactions.

1,2-Epoxyalkane: Another Precursor for Fabricating Alkoxy Self-Assembled Monolayers on Hydrogen-Terminated Si(111)

This work describes the UV alkoxylation of a series of 1,2-epoxyalkanes on the hydrogen-terminated silicon (H-Si) substrate. The formation of alkoxy self-assembled monolayers (SAMs) and the nature of bonding at the surface of H-Si were examined using water contact angle goniometer, spectroscopic ellipsometer, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy. UV exposure to 1,2-epoxyalkane mesitylene solution for 60 min formed alkoxy-SAMs onto H-Si with hydrophobic properties. The local molecular environment of the alkyl chains transitioned from a disordered, liquid-like state to an ordered, crystalline-like structure with increasing the chain length. XPS and FTIR indicated that the reaction of H-Si with 1,2-epoxyalkane produced Si-O-C linkages. The Si-H bond homolysis and electron/hole were the plausible mechanistic routes for the grafting of 1,2-epoxyalkanes.

Design Strategy for the Molecular Functionalization of Semiconductor Photoelectrodes: A Case Study of p-Si(111) Photocathodes for H2 Generation

Functionalization of semiconductor photoelectrodes is actively pursued as an approach to improve the efficiency of photoelectrochemical reactions by modulating the semiconductor's barrier height, but the selection of molecules for functionalization remains largely empirical. We propose a simple but effective design strategy for the organic functionalization of photocathodes for high-efficiency hydrogen generation based on first-principles density functional theory (DFT) calculations. The surface dipole of the functionalized photocathode determines its barrier height, which can be optimized to enhance charge separation at the semiconductor-electrolyte interface. Focusing on p-Si(111) photocathodes functionalized with different mixed aryl/methyl monolayers, we use DFT to systematically investigate the effect of - the presence and distribution of pi bonds, binding atom (the atom in the functional group that bonds with the Si surface), functional group length, and electrophilic substituent groups - on the surface dipole and charge rearrangement at the functionalized surface. We find that the most important factors affecting the surface dipole are the intrinsic molecular dipole moment of the organic moiety, the presence of electrophilic substituent groups, and the binding atom. Using these findings, a three-step design strategy is proposed for the experimental realization of high-performing functionalized p-Si(111) photocathodes by maximizing the surface dipole.

Light-Converting Polymer/Si Nanocrystal Composites with Stable 60-70% Quantum Efficiency and Their Glass Laminates

Thiol-ene polymer/Si nanocrystal bulk hybrids were synthesized from alkyl-passivated Si nanocrystal (Si NC) toluene solutions. Radicals in the polymer provided a copassivation of "dark" Si NCs, making them optically active and leading to a substantial ensemble quantum yield increase. Optical stability over several months was confirmed. The presented materials exhibit the highest photoluminescence quantum yield (∼65%) of any solid-state Si NC hybrid reported to date. The broad tunability of thiol-ene polymer reactivity provides facile glass integration, as demonstrated by a laminated structure. This, together with extremely fast polymerization, makes the demonstrated hybrid material a promising candidate for light converting applications.

Rapid Surface Functionalization of Hydrogen-Terminated Silicon by Alkyl Silanols

Surface functionalization of inorganic semiconductor substrates, particularly silicon, has focused attention toward many technologically important applications, involving photovoltaic energy, biosensing and catalysis. For such modification processes, oxide-free (H-terminated) silicon surfaces are highly required, and different chemical approaches have been described in the past decades. However, their reactivity is often poor, requiring long reaction times (2–18 h) or the use of UV light (10–30 min). Here, we report a simple and rapid surface functionalization for H-terminated Si(111) surfaces using alkyl silanols. This catalyst-free surface reaction is fast (15 min at room temperature) and can be accelerated with UV light irradiation, reducing the reaction time to 1–2 min. This grafting procedure leads to densely packed organic monolayers that are hydrolytically stable (even up to 30 days at pH 3 or 11) and can display excellent antifouling behavior against a range of organic polymers.

Chemical Modification of Semiconductor Surfaces for Molecular Electronics

Inserting molecular monolayers within metal/semiconductor interfaces provides one of the most powerful expressions of how minute chemical modifications can affect electronic devices. This topic also has direct importance for technology as it can help improve the efficiency of a variety of electronic devices such as solar cells, LEDs, sensors, and possible future bioelectronic ones. The review covers the main aspects of using chemistry to control the various aspects of interface electrostatics, such as passivation of interface states and alignment of energy levels by intrinsic molecular polarization, as well as charge rearrangement with the adjacent metal and semiconducting contacts. One of the greatest merits of molecular monolayers is their capability to form excellent thin dielectrics, yielding rich and unique current-voltage characteristics for transport across metal/molecular monolayer/semiconductor interfaces. We explain the interplay between the monolayer as tunneling barrier on the one hand, and the electrostatic barrier within the semiconductor, due to its space-charge region, on the other hand, as well as how different monolayer chemistries control each of these barriers. Practical tools to experimentally identify these two barriers and distinguish between them are given, followed by a short look to the future. This review is accompanied by another one, concerning the formation of large-area molecular junctions and charge transport that is dominated solely by molecules.