THz Pulse Detection by Multilayered GeTe/Sb2Te3

A Terahertz Optomechanical Detector Based on Metasurface and Bi-Material Micro-Cantilevers

Terahertz imaging technology has shown great potential in many fields. As the core component of terahertz imaging systems, terahertz detectors have received extensive attention. In this paper, a metasurface-based terahertz optomechanical detector is proposed, which is made of two fabrication-friendly materials: gold and silicon nitride. The optomechanical detector is essentially a thermal detector composed of metasurface absorber, bi-material micro-cantilevers and heat insulation pillars. Compared with traditional thermal terahertz detectors, the optomechanical detector employs a metasurface absorber as the terahertz radiation coupler and obtains an absorptivity higher than 90% from 3.24 to 3.98 THz, which is much higher than that of traditional terahertz detectors with absorbers made from natural materials. Furthermore, the detector is fabricated by MEMS process and its responsivity has been verified by a specifically designed optical read-out system; the measured optomechanical responsivity is 24.8 μm/μW, which agrees well with the multi-physics simulation. These results indicated that the detector can be employed as a pixel to form a terahertz focal plane array in the future, and further realize real-time terahertz imaging at room temperature.

Metasurface absorber with ultra-thin thickness designed for a terahertz focal plane array detector

Terahertz (THz) refers to electromagnetic waves with frequency from 0.1 to 10 THz, which lies between millimeter waves and infrared light. This paper proposes an ultra-thin metasurface absorber which is perfectly suited to be the signal coupling part of terahertz focal plane array (FPA) detector. The absorptance of the proposed metasurface is higher than 80% from 4.46 to 5.76 THz (25.4%) while the thickness is merely 1.12 µm (0.018 λ). Since the metasurface absorber will be applied to terahertz FPA detector which requires planar array formation, it is divided into meta-atoms. Each meta-atom consists of the same unit cell layout, and air gaps are introduced between adjacent meta-atoms to enhance the thermal isolation, which is crucial for FPA detector to obtain desired imaging results. Due to the symmetrical layout of meta-atoms, absorptance keeps stable for different polarized waves, moreover, good absorptance could also be achieved for incidence angles range of ± 30 °. Spectral measurements show good agreement with the simulation. As a result, features of ultra-thin thickness, polarization insensitivity, and high absorptance make the proposed metasurface absorber well suited to highly efficient coupling of terahertz signals in FPA detector.

Ultrabroadband Tellurium Photoelectric Detector from Visible to Millimeter Wave

Ultrabroadband photodetection is of great significance in numerous cutting-edge technologies including imaging, communications, and medicine. However, since photon detectors are selective in wavelength and thermal detectors are slow in response, developing high performance and ultrabroadband photodetectors is extremely difficult. Herein, one demonstrates an ultrabroadband photoelectric detector covering visible, infrared, terahertz, and millimeter wave simultaneously based on single metal-Te-metal structure. Through the two kinds of photoelectric effect synergy of photoexcited electron-hole pairs and electromagnetic induced well effect, the detector achieves the responsivities of 0.793 A W-1 at 635 nm, 9.38 A W-1 at 1550 nm, 9.83 A W-1 at 0.305 THz, 24.8 A W-1 at 0.250 THz, 87.8 A W-1 at 0.172 THz, and 986 A W-1 at 0.022 THz, respectively. It also exhibits excellent polarization detection with a dichroic ratio of 468. The excellent performance of the detector is further verified by high-resolution imaging experiments. Finally, the high stability of the detector is tested by long-term deposition in air and high-temperature aging. The strategy provides a recipe to achieve ultrabroadband photodetection with high sensitivity and fast response utilizing full photoelectric effect.

A Study of Terahertz-Wave Cylindrical Super-Oscillatory Lens for Industrial Applications

This paper describes the design and development of a cylindrical super-oscillatory lens (CSOL) for applications in the sub-terahertz frequency range, which are especially ideal for industrial inspection of films using terahertz (THz) and millimeter waves. Product inspections require high resolution (same as inspection with visible light), long working distance, and long depth of focus (DOF). However, these are difficult to achieve using conventional THz components due to diffraction limits. Here, we present a numerical approach in designing a 100 mm × 100 mm CSOL with optimum properties and performance for 0.1 THz (wavelength λ = 3 mm). Simulations show that, at a focal length of 70 mm (23.3λ), the focused beam by the optimized CSOL is a thin line with a width of 2.5 mm (0.84λ), which is 0.79 times the diffraction limit. The DOF of 10 mm (3.3λ) is longer than that of conventional lenses. The results also indicate that the generation of thin line-shaped focal beam is dominantly influenced by the outer part of the lens.

Terahertz generation measurements of multilayered GeTe-Sb2Te3 phase change materials

Multilayered structures of GeTe and Sb₂Te₃ phase change material, also referred to as interfacial phase change memory (iPCM), provide superior performance for nonvolatile electrical memory technology in which the atomically controlled structure plays an important role in memory operation. Here, we report on terahertz (THz) wave generation measurements. Three- and 20-layer iPCM samples were irradiated with a femtosecond laser, and the generated THz radiation was observed. The emitted THz pulse was found to be always p polarized independent of the polarization of the excitation pulse. Based on the polarization dependence as well as the flip of the THz field from photoexcited Sb₂Te₃ and Bi₂Te₃, the THz emission process can be attributed to the surge current flow due to the built-in surface depletion layer formed in p-type semiconducting iPCM materials.

Topological Phase Buried in a Chalcogenide Superlattice Monitored by Helicity-Dependent Kerr Measurement

Chalcogenide superlattices (SLs), formed by the alternate stacking of GeTe and Sb₂Te₃ layers, also referred to as interfacial phase-change memory (iPCM), are a leading candidate for spin-based memory device applications. Theoretically, the iPCM structure has been predicted to form a three-dimensional topological insulator or Dirac semimetal phase depending on the constituent layer thicknesses. Here, we experimentally investigate the topological insulating nature of chalcogenide SLs using a helicity-dependent time-resolved Kerr measurement. The helicity-dependent Kerr signal is observed to exhibit a four-cycle oscillation with π/2 periodicity, suggesting the existence of a Dirac-like cone in some chalcogenide SLs. Furthermore, we found that increasing the thickness of the GeTe layer dramatically changed the periodicity, indicating a phase transition from a Dirac semimetal into a trivial insulator. Our results demonstrate that thickness-tuned chalcogenide SLs can play an important role in the manipulation of topological states, which may open up new possibilities for spintronic devices based on chalcogenide SLs.

Impact of Stoichiometry on the Structure of van der Waals Layered GeTe/Sb2 Te3 Superlattices Used in Interfacial Phase-Change Memory (iPCM) Devices

Van der Waals layered GeTe/Sb₂ Te₃ superlattices (SLs) have demonstrated outstanding performances for use in resistive memories in so-called interfacial phase-change memory (iPCM) devices. GeTe/Sb₂ Te₃ SLs are made by periodically stacking ultrathin GeTe and Sb₂ Te₃ crystalline layers. The mechanism of the resistance change in iPCM devices is still highly debated. Recent experimental studies on SLs grown by molecular beam epitaxy or pulsed laser deposition indicate that the local structure does not correspond to any of the previously proposed structural models. Here, a new insight is given into the complex structure of prototypical GeTe/Sb₂ Te₃ SLs deposited by magnetron sputtering, which is the used industrial technique for SL growth in iPCM devices. X-ray diffraction analysis shows that the structural quality of the SL depends critically on its stoichiometry. Moreover, high-angle annular dark-field-scanning transmission electron microscopy analysis of the local atomic order in a perfectly stoichiometric SL reveals the absence of GeTe layers, and that Ge atoms intermix with Sb atoms in, for instance, Ge₂ Sb₂ Te₅ blocks. This result shows that an alternative structural model is required to explain the origin of the electrical contrast and the nature of the resistive switching mechanism observed in iPCM devices.

Manipulation of dangling bonds of interfacial states coupled in GeTe-rich GeTe/Sb2Te3 superlattices

Superlattices consisting of stacked nano-sized GeTe and Sb2Te3 blocks have attracted considerable attention owing to their potential for an efficient non-melting switching mechanism, associated with complex bonding between blocks. Here, we propose possible atomic models for the superlattices, characterized by different interfacial bonding types. Based on interplanar distances extracted from ab initio calculations and electron diffraction measurements, we reveal possible intercalation of dangling bonds as the GeTe content in the superlattice increases. The dangling bonds were further confirmed by X-ray photoelectron spectroscopy, anisotropic temperature dependent resistivity measurements down to 2 K and magnetotransport analysis. Changes of partially coherent decoupled topological surfaces states upon dangling bonds varying contributed to the switching mechanism. Furthermore, the topological surface states controlled by changing the bonding between stacking blocks may be optimized for multi-functional applications.

Resistive switching mechanism of GeTe-Sb2Te3 interfacial phase change memory and topological properties of embedded two-dimensional states

A theoretical study of an interfacial phase change memory made of a GeTe-Sb₂Te₃ superlattice with W electrodes is presented to identify the high and low resistance states and the switching mechanism. The ferro structure of the GeTe layer block in the Te-Ge-Te-Ge sequence can be in the low resistance state only if the SET/RESET mode consists of a two step dynamical process, corresponding to a vertical flip of the Ge layer with respect to the Te layer, followed by lateral motion driven by thermal relaxation. The importance of spin-orbit coupling at the GeTe/Sb₂Te₃ interface to the "bias polarity-dependent" SET/RESET operation is shown, and an analysis of the two-dimensional states confined at the GeTe/Sb₂Te₃ interface inside the resistive switching layer is presented. Our results allow us to propose a phase diagram for the transition from a topologically nontrivial to a trivial gap state of these two-dimensional compounds.