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Regioregular Asymmetric Diketopyrrolopyrrole Copolymers with Good Molecular Ordered Assembly Ability for High-performance Polymer Transistors. CHINESE JOURNAL OF POLYMER SCIENCE 2023. [DOI: 10.1007/s10118-023-2918-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
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Attar S, Yang R, Chen Z, Ji X, Comí M, Banerjee S, Fang L, Liu Y, Al-Hashimi M. Thiazole fused S, N-heteroacene step-ladder polymeric semiconductors for organic transistors. Chem Sci 2022; 13:12034-12044. [PMID: 36349116 PMCID: PMC9600222 DOI: 10.1039/d2sc04661j] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/21/2022] [Accepted: 09/05/2022] [Indexed: 09/07/2024] Open
Abstract
Ladder-type thiazole-fused S,N-heteroacenes with an extended π-conjugation consisting of six (SN6-Tz) and nine (SN9-Tz) fused aromatic rings have been synthesized and fully characterized. To date, the synthesis of well-defined fused building blocks and polymers of π-conjugated organic compounds based on the thiazole moiety is a considerable synthetic challenge, due to the difficulty in their synthesis. Acceptor-donor building blocks M1 and M2 were successfully polymerized into ladder homopolymers P1-P2 and further copolymerized with a diketopyrrolopyrrole unit to afford step-ladder copolymer P3. The optical, electronic, and thermal properties, in addition to their charge transport behavior in organic thin-film transistors (OTFTs), were investigated. The results showed an interesting effect on the molecular arrangement of the thiazole-based ladder-type heteroacene in the crystal structure revealing skewed π-π-stacking, and expected to possess better p-type semiconducting performance. The polymers all possess good molecular weights and excellent thermal properties. All the polymer-based OTFT devices exhibit annealing temperature dependent performance, and among the polymers P3 exhibits the highest mobility of 0.05 cm2 V-1 s-1.
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Affiliation(s)
- Salahuddin Attar
- Department of Chemistry, Texas A&M University at Qatar P.O. Box 23874 Doha Qatar
| | - Rui Yang
- Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology Beijing 100029 China
| | - Zhihui Chen
- Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology Beijing 100029 China
| | - Xiaozhou Ji
- Department of Chemistry, Texas A&M University College Station 77843-3255 Texas USA
- Department of Chemical Engineering, Stanford University Stanford 94305 California USA
| | - Marc Comí
- Department of Chemistry, Texas A&M University at Qatar P.O. Box 23874 Doha Qatar
| | - Sarbajit Banerjee
- Department of Chemistry, Texas A&M University College Station 77843-3255 Texas USA
| | - Lei Fang
- Department of Chemistry, Texas A&M University College Station 77843-3255 Texas USA
| | - Yao Liu
- Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology Beijing 100029 China
| | - Mohammed Al-Hashimi
- Department of Chemistry, Texas A&M University at Qatar P.O. Box 23874 Doha Qatar
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Jiang H, Zhu S, Cui Z, Li Z, Liang Y, Zhu J, Hu P, Zhang HL, Hu W. High-performance five-ring-fused organic semiconductors for field-effect transistors. Chem Soc Rev 2022; 51:3071-3122. [PMID: 35319036 DOI: 10.1039/d1cs01136g] [Citation(s) in RCA: 26] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/02/2023]
Abstract
Organic molecular semiconductors have been paid great attention due to their advantages of low-temperature processability, low fabrication cost, good flexibility, and excellent electronic properties. As a typical example of five-ring-fused organic semiconductors, a single crystal of pentacene shows a high mobility of up to 40 cm2 V-1 s-1, indicating its potential application in organic electronics. However, the photo- and optical instabilities of pentacene make it unsuitable for commercial applications. But, molecular engineering, for both the five-ring-fused building block and side chains, has been performed to improve the stability of materials as well as maintain high mobility. Here, several groups (thiophenes, pyrroles, furans, etc.) are introduced to design and replace one or more benzene rings of pentacene and construct novel five-ring-fused organic semiconductors. In this review article, ∼500 five-ring-fused organic prototype molecules and their derivatives are summarized to provide a general understanding of this catalogue material for application in organic field-effect transistors. The results indicate that many five-ring-fused organic semiconductors can achieve high mobilities of more than 1 cm2 V-1 s-1, and a hole mobility of up to 18.9 cm2 V-1 s-1 can be obtained, while an electron mobility of 27.8 cm2 V-1 s-1 can be achieved in five-ring-fused organic semiconductors. The HOMO-LUMO levels, the synthesis process, the molecular packing, and the side-chain engineering of five-ring-fused organic semiconductors are analyzed. The current problems, conclusions, and perspectives are also provided.
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Affiliation(s)
- Hui Jiang
- School of Materials Science and Engineering, Tianjin University, 300072, China. .,Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
| | - Shengli Zhu
- School of Materials Science and Engineering, Tianjin University, 300072, China.
| | - Zhenduo Cui
- School of Materials Science and Engineering, Tianjin University, 300072, China.
| | - Zhaoyang Li
- School of Materials Science and Engineering, Tianjin University, 300072, China.
| | - Yanqin Liang
- School of Materials Science and Engineering, Tianjin University, 300072, China.
| | - Jiamin Zhu
- School of Materials Science and Engineering, Tianjin University, 300072, China.
| | - Peng Hu
- School of Physics, Northwest University, Xi'an 710069, China
| | - Hao-Li Zhang
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China. .,State Key Laboratory of Applied Organic Chemistry, Key Laboratory of Special Function Materials and Structure Design, College of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou 730000, China.
| | - Wenping Hu
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China. .,Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou 350207, China
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Pang B, Tang Z, Li Y, Meng H, Xiang Y, Li Y, Huang J. Synthesis of Conjugated Polymers Containing B←N Bonds with Strong Electron Affinity and Extended Absorption. Polymers (Basel) 2019; 11:polym11101630. [PMID: 31600910 PMCID: PMC6835370 DOI: 10.3390/polym11101630] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/22/2019] [Revised: 09/29/2019] [Accepted: 09/30/2019] [Indexed: 11/16/2022] Open
Abstract
The B←N is isoelectronic to the C-C, with the former having stronger dipole moment and higher electron affinity. Replacing the C-C bonds in conjugated polymers with B←N bonds is an effective pathway toward novel polymers with strong electron affinity and adjustable optoelectronic properties. In this work, we synthesize a conjugated copolymer, namely, BNIDT-DPP, based on a B←N embedded unit, BNIDT, and a typical electron-deficient unit, diketopyrrolopyrrole (DPP). For comparison, the C-C counterpart, i.e., IDT-DPP, is also synthesized. In contrast to IDT-DPP, the B←N embedded polymer BNIDT-DPP shows an extended absorption edge (836 versus 978 nm), narrowed optical bandgap (1.48 versus 1.27 eV), and higher electron affinity (3.54 versus 3.74 eV). The Gaussian simulations reveal that the B←N embedded polymer BNIDT-DPP is more electron-deficient in contrast to IDT-DPP, supporting the decreased bandgap and energy levels of BNIDT-DPP. Organic thin-film transistor (OTFT) tests indicate a well-defined p-type characteristic for both IDT-DPP and BNIDT-DPP. The hole mobilities of IDT-DPP and BNIDT-DPP tested by OTFTs are 0.059 and 0.035 cm2/V·s, respectively. The preliminary fabrication of all-polymer solar cells based on BNIDT-DPP and PBDB-T affords a PCE of 0.12%. This work develops a novel B←N embedded polymer with strong electron affinity and extended absorption, which is potentially useful for electronic device application.
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Affiliation(s)
- Bo Pang
- College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, China.
| | - Zhonghai Tang
- Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China.
| | - Yongchun Li
- College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, China.
- Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China.
| | - Huifeng Meng
- College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, China.
- Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China.
| | - Ying Xiang
- College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, China.
| | - Yuqing Li
- College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, China.
- Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China.
| | - Jianhua Huang
- College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, China.
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Thienoisoindigo-Based Semiconductor Nanowires Assembled with 2-Bromobenzaldehyde via Both Halogen and Chalcogen Bonding. Sci Rep 2018; 8:14448. [PMID: 30262857 PMCID: PMC6160462 DOI: 10.1038/s41598-018-32486-z] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/17/2018] [Accepted: 09/07/2018] [Indexed: 02/05/2023] Open
Abstract
We fabricated nanowires of a conjugated oligomer and applied them to organic field-effect transistors (OFETs). The supramolecular assemblies of a thienoisoindigo-based small molecular organic semiconductor (TIIG-Bz) were prepared by co-precipitation with 2-bromobenzaldehyde (2-BBA) via a combination of halogen bonding (XB) between the bromide in 2-BBA and electron-donor groups in TIIG-Bz, and chalcogen bonding (CB) between the aldehyde in 2-BBA and sulfur in TIIG-Bz. It was found that 2-BBA could be incorporated into the conjugated planes of TIIG-Bz via XB and CB pairs, thereby increasing the π − π stacking area between the conjugated planes. As a result, the driving force for one-dimensional growth of the supramolecular assemblies via π − π stacking was significantly enhanced. TIIG-Bz/2-BBA nanowires were used to fabricate OFETs, showing significantly enhanced charge transfer mobility compared to OFETs based on pure TIIG-Bz thin films and nanowires, which demonstrates the benefit of nanowire fabrication using 2-BBA.
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Li Y, Tatum WK, Onorato JW, Zhang Y, Luscombe CK. Low Elastic Modulus and High Charge Mobility of Low-Crystallinity Indacenodithiophene-Based Semiconducting Polymers for Potential Applications in Stretchable Electronics. Macromolecules 2018. [DOI: 10.1021/acs.macromol.8b00898] [Citation(s) in RCA: 58] [Impact Index Per Article: 9.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/28/2023]
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Li Y, Meng H, Yan D, Li Y, Pang B, Zhang K, Luo G, Huang J, Zhan C. Synthesis of B←N embedded indacenodithiophene chromophores and effects of bromine atoms on photophysical properties and energy levels. Tetrahedron 2018. [DOI: 10.1016/j.tet.2018.06.035] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/17/2022]
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Bulumulla C, Kularatne RN, Gunawardhana R, Nguyen HQ, McCandless GT, Biewer MC, Stefan MC. Incorporation of Thieno[3,2- b]pyrrole into Diketopyrrolopyrrole-Based Copolymers for Efficient Organic Field Effect Transistors. ACS Macro Lett 2018; 7:629-634. [PMID: 35632968 DOI: 10.1021/acsmacrolett.8b00236] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Recent advancements in organic field effect transistors have switched chemists' focus from synthesizing libraries of organic semiconductors to a more targeted approach where chemical alterations are performed on known semiconductors to further improve electronic properties. Among successful semiconducting polymer candidates, copolymers based on diketopyrrolopyrrole-and thieno[3,2-b]thiophene [P(DPP-TT)] have been subjected to modifications on the diketopyrrolopyrrole unit by using flanking groups and side chain engineering. Thieno[3,2-b]thiophene moiety, however, has seen minimal modifications due to the limited number of modifying sites. Isoelectronic thieno[3,2-b]pyrrole could serve as an alternative since it is easily tunable via N-alkylation reactions. Therefore, for the first time, we report the replacement of the thieno[3,2-b]thiophene unit of P(DPP-TT) with thieno[3,2-b]pyrrole unit and its performance in p-channel field effect transistors. The copolymer exhibits linear characteristics to achieve a relatively high average hole mobility of 0.12 cm2 V-1 s-1 in bottom-gate/top-contact field effect transistors with threshold voltages as low as 0 V. These preliminary results highlight the potential of this thieno[3,2-b]pyrrole monomer for utilization in organic field effect transistors.
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Zhong W, Fan B, Cui J, Ying L, Liu F, Peng J, Huang F, Cao Y, Bazan GC. Regioisomeric Non-Fullerene Acceptors Containing Fluorobenzo[c][1,2,5]thiadiazole Unit for Polymer Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2017; 9:37087-37093. [PMID: 28985459 DOI: 10.1021/acsami.7b12902] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We designed and synthesized two isomeric nonfullerene acceptors, IFBR-p and IFBR-d. These molecular semiconductors contain indacenodithiophene (IDT) as the central unit, adjacent asymmetric 5-fluorobenzo[c][1,2,5]thiadiazole units, and are flanked with rhodanine as the peripheral units. The orientation of the two fluorine atoms (proximal, p, or distal, d), relative to IDT impacts most severely the film morphologies when blended with the electron-donating polymer PTzBI. Polymer solar cells based on PTzBI:IFBR-p give rise to a power conversion efficiency (7.3 ± 0.2%) that is higher than what is achieved with PTzBI:IFBR-d (5.2 ± 0.1%). This difference is attributed to the lower tendency for (over)crystallization by IFBR-p and the resulting more favorable morphology of the photoactive layer. These results highlight the subtle impact of substitution regiochemistry on the properties of nonfullerene acceptors through modulation of their self-assembly tendencies.
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Affiliation(s)
- Wenkai Zhong
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology , Guangzhou 510640, P. R. China
| | - Baobing Fan
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology , Guangzhou 510640, P. R. China
| | - Jing Cui
- Sinopec Shanghai Research Institute of Petrochemical Technology , Shanghai, 201208, China
| | - Lei Ying
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology , Guangzhou 510640, P. R. China
| | - Feng Liu
- Department of Physics and Astronomy, Shanghai Jiao Tong University , Shanghai, 200240, P. R. China
| | - Junbiao Peng
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology , Guangzhou 510640, P. R. China
- MOE International Collaborative Laboratory for Advanced Functional Materials, South China University of Technology , Guangzhou 510640, P. R. China
| | - Fei Huang
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology , Guangzhou 510640, P. R. China
| | - Yong Cao
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology , Guangzhou 510640, P. R. China
| | - Guillermo C Bazan
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology , Guangzhou 510640, P. R. China
- MOE International Collaborative Laboratory for Advanced Functional Materials, South China University of Technology , Guangzhou 510640, P. R. China
- Department of Chemistry and Biochemistry, Center for Polymers and Organic Solids, University of California , Santa Barbra, California 93106, United States
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