Transparent, Flexible Piezoelectric Nanogenerator Based on GaN Membrane Using Electrochemical Lift-Off

Numerical Evaluation of the Elastic Moduli of AlN and GaN Nanosheets

Two-dimensional (2D) nanostructures of aluminum nitride (AlN) and gallium nitride (GaN), called nanosheets, have a graphene-like atomic arrangement and represent novel materials with important upcoming applications in the fields of flexible electronics, optoelectronics, and strain engineering, among others. Knowledge of their mechanical behavior is key to the correct design and enhanced functioning of advanced 2D devices and systems based on aluminum nitride and gallium nitride nanosheets. With this background, the surface Young's and shear moduli of AlN and GaN nanosheets over a wide range of aspect ratios were assessed using the nanoscale continuum model (NCM), also known as the molecular structural mechanics (MSM) approach. The NCM/MSM approach uses elastic beam elements to represent interatomic bonds and allows the elastic moduli of nanosheets to be evaluated in a simple way. The surface Young's and shear moduli calculated in the current study contribute to building a reference for the evaluation of the elastic moduli of AlN and GaN nanosheets using the theoretical method. The results show that an analytical methodology can be used to assess the Young's and shear moduli of aluminum nitride and gallium nitride nanosheets without the need for numerical simulation. An exploratory study was performed to adjust the input parameters of the numerical simulation, which led to good agreement with the results of elastic moduli available in the literature. The limitations of this method are also discussed.

Self-Charging Piezo-Supercapacitor: One-Step Mechanical Energy Conversion and Storage

With the contemplations of ecological and environmental issues related to energy harvesting, piezoelectric nanogenerators (PNGs) may be an accessible, sustainable, and abundant elective wellspring of energy in the future. The PNGs' power output, however, is dependent on the mechanical energy input, which will be intermittent if the mechanical energy is not continuous. This is a fatal flaw for electronics that need continuous power. Here, a self-charging flexible supercapacitor (PSCFS) is successfully realized that can harvest sporadic mechanical energy, convert it to electrical energy, and simultaneously store power. Initially, chemically processed multimetallic oxide, namely, copper cobalt nickel oxide (CuCoNiO₄) is amalgamated within the poly(vinylidene fluoride) (PVDF) framework in different wt % to realize high-performance PNGs. The combination of CuCoNiO₄ as filler creates a notable electroactive phase inside the PVDF matrix, and the composite realized by combining 1 wt % CuCoNiO₄ with PVDF, coined as PNCU 1, exhibits the highest electroactive phase (>86%). Under periodic hammering (∼100 kPa), PNGs fabricated with this optimized composite film deliver an instantaneous voltage of ∼67.9 V and a current of ∼4.15 μA. Furthermore, PNG 1 is ingeniously integrated into a supercapacitor to construct PSCFS, using PNCU 1 as a separator and CuCoNiO₄ nanowires on carbon cloth (CC) as the positive and negative electrodes. The self-charging behavior of the rectifier-free storage device was established under bending deformation. The PSCFS device exhibits ∼845 mV from its initial open-circuit potential ∼35 mV in ∼220 s under periodic bending of 180° at a frequency of 1 Hz. The PSCFS can power up various portable electronic appliances such as calculators, watches, and LEDs. This work offers a high-performance, self-powered device that can be used to replace bulky batteries in everyday electronic devices by harnessing mechanical energy, converting mechanical energy from its environment into electrical energy.

Transferable Ga2O3 Membrane for Vertical and Flexible Electronics via One-Step Exfoliation

Transferable Ga₂O₃ thin film membrane is desirable for vertical and flexible solar-blind photonics and high-power electronics applications. However, Ga₂O₃ epitaxially grown on rigid substrates such as sapphire, Si, and SiC hinders its exfoliation due to the strong covalent bond between Ga₂O₃ and substrates, determining its lateral device configuration and also hardly reaching the ever-increasing demand for wearable and foldable applications. Mica substrate, which has an atomic-level flat surface and high-temperature tolerance, could be a good candidate for the van der Waals (vdW) epitaxy of crystalline Ga₂O₃ membrane. Beyond that, benefiting from the weak vdW bond between Ga₂O₃ and mica substrate, in this work, the Ga₂O₃ membrane is exfoliated and transferred to arbitrary flexible and adhesive tape, allowing for the vertical and flexible electronic configuration. This straightforward exfoliation method is verified to be consistent and reproducible by the transfer and characterization of thick (∼380 nm)/thin (∼95 nm) κ-phase Ga₂O₃ and conductive n-type β-Ga₂O₃. Vertical photodetectors are fabricated based on the exfoliated Ga₂O₃ membrane, denoting the peak response at ∼250 nm. Through the integration of Ti/Au Ohmic contact and Ni/Ag Schottky contact electrode, the vertical photodetector exhibits self-powered photodetection behavior with a responsivity of 17 mA/W under zero bias. The vdW-bond-assisted exfoliation of the Ga₂O₃ membrane demonstrated here could provide enormous opportunities in the pursuit of vertical and flexible Ga₂O₃ electronics.

Expedient secondary functions of flexible piezoelectrics for biomedical energy harvesting

Flexible piezoelectrics realise the conversion between mechanical movements and electrical power by conformally attaching onto curvilinear surfaces, which are promising for energy harvesting of biomedical devices due to their sustainable body movements and/or deformations. Developing secondary functions of flexible piezoelectric energy harvesters is becoming increasingly significant in recent years via aiming at issues that cannot be addressed or mitigated by merely increasing piezoelectric efficiencies. These issues include loose interfacial contact and pucker generation by stretching, power shortage or instability induced by inadequate mechanical energy, and premature function degeneration or failure caused by fatigue fracture after cyclic deformations. Herein, the expedient secondary functions of flexible piezoelectrics to mitigate above issues are reviewed, including stretchability, hybrid energy harvesting, and self-healing. Efforts have been devoted to understanding the state-of-the-art strategies and their mechanisms of achieving secondary functions based on piezoelectric fundamentals. The link between structural characteristic and function performance is unravelled by providing insights into carefully selected progresses. The remaining challenges of developing secondary functions are proposed in the end with corresponding outlooks. The current work hopes to help and inspire future research in this promising field focusing on developing the secondary functions of flexible piezoelectric energy harvesters.

Unusual nanoscale piezoelectricity-driven high current generation from a self S-defect-neutralised few-layered MoS2 nanosheet-based flexible nanogenerator

We report the fabrication of a high-performance flexible piezoelectric nanogenerator based on S-defect-neutralised few-layered molybdenum disulphide (MoS₂) nanosheets. High-resolution transmission electron microscopy (HR-TEM) and Raman spectroscopy confirmed the number of stacked layers in the MoS₂ sheets to be 3-5. The defect, electronic and chemical states of the as-grown MoS₂ nanosheets were investigated by X-ray photoelectron spectroscopy (XPS). An as-fabricated MoS₂ nanogenerator with a CNT electrode generates an excellent high output voltage of 22 V and a record-high output current density of 9.00 μA cm^-2 under a small vertical compressive force of 1.5 kgf. The piezoelectric charge coefficient of the 2D MoS₂ nanosheets was investigated using piezoelectric force microscopy (PFM), and a very high piezoelectric charge coefficient (d₃₃) of 120 pm V^-1 was obtained. The energy conversion efficiency of the device was about 30%. Moreover, the MoS₂ nanosheets show a high dielectric constant of about 2649 at low frequency. The results suggest that the absence of S-defects can reduce the free charge carrier and screening effect, resulting in a high output voltage and current density. The performance of the nanogenerator is discussed in terms of its high d₃₃, high dielectric constant, the crystalline mixed phase of MoS₂ and the electronic state of the MoS₂ nanosheets.

Harvesting circuits for triboelectric nanogenerators for wearable applications

Internet of Things (IoT) and recently Internet of Nano Things (IoNT) bear the promise of new devices able to communicate and assist our daily lives toward wearable technologies which demand a versatile integration such as in wireless body networks (WBN), sensing, and health monitorization. These must comply with stringent constraints on energy usage. Dimensions and complexity intensify the need for small and maintenance-free power sources. Environment energy harvesting and storage is an important approach to sustain operation for a long time. Triboelectric nanogenerators (TENGs) arise as a strong and promising solution to power the new field of outcoming self-sustainable devices, implantable, and wearable devices. They can transform mechanical energy in different modes, have simple structures, and use vulgar and sustainable materials. This paper makes a review about TENGs technology, construction, materials, operation, and focus on strategies for harvesting circuits. Main challenges like efficiency, reliability, energy storage, and sustainability are discussed.

Ultra-Stable and Durable Piezoelectric Nanogenerator with All-Weather Service Capability Based on N Doped 4H-SiC Nanohole Arrays

Ultra-stable piezoelectric nanogenerator (PENG) driven by environmental actuation sources with all-weather service capability is highly desirable. Here, the PENG based on N doped 4H-SiC nanohole arrays (NHAs) is proposed to harvest ambient energy under low/high temperature and relative humidity (RH) conditions. Finite element method simulation of N doped 4H-SiC NHAs in compression mode is developed to evaluate the relationship between nanohole diameter and piezoelectric performance. The density of short circuit current of the assembled PENG reaches 313 nA cm^-2, which is 1.57 times the output of PENG based on N doped 4H-SiC nanowire arrays. The enhancement can be attributed to the existence of nanohole sidewalls in NHAs. All-weather service capability of the PENG is verified after being treated at -80/80 ℃ and 0%/100% RH for 50 days. The PENG is promising to be widely used in practice worldwide to harvest biomechanical energy and mechanical energy.

Toward Large-Scale Ga2O3 Membranes via Quasi-Van Der Waals Epitaxy on Epitaxial Graphene Layers

Epitaxial growth using graphene (GR), weakly bonded by van der Waals force, is a subject of interest for fabricating technologically important semiconductor membranes. Such membranes can potentially offer effective cooling and dimensional scale-down for high voltage power devices and deep ultraviolet optoelectronics at a fraction of the bulk-device cost. Here, we report on a large-area β-Ga₂O₃ nanomembrane spontaneous-exfoliation (1 cm × 1 cm) from layers of compressive-strained epitaxial graphene (EG) grown on SiC, and demonstrated high-responsivity flexible solar-blind photodetectors. The EG was favorably influenced by lattice arrangement of SiC, and thus enabled β-Ga₂O₃ direct-epitaxy on the EG. The β-Ga₂O₃ layer was spontaneously exfoliated at the interface of GR owing to its low interfacial toughness by controlling the energy release rate through electroplated Ni layers. The use of GR templates contributes to the seamless exfoliation of the nanomembranes, and the technique is relevant to eventual nanomembrane-based integrated device technology.

Epitaxial Lift-Off of Flexible GaN-Based HEMT Arrays with Performances Optimization by the Piezotronic Effect

High-electron-mobility transistors (HEMTs) are a promising device in the field of radio frequency and wireless communication. However, to unlock the full potential of HEMTs, the fabrication of large-size flexible HEMTs is required. Herein, a large-sized (> 2 cm²) of AlGaN/AlN/GaN heterostructure-based HEMTs were successfully stripped from sapphire substrate to a flexible polyethylene terephthalate substrate by an electrochemical lift-off technique. The piezotronic effect was then induced to optimize the electron transport performance by modulating/tuning the physical properties of two-dimensional electron gas (2DEG) and phonons. The saturation current of the flexible HEMT is enhanced by 3.15% under the 0.547% tensile condition, and the thermal degradation of the HEMT was also obviously suppressed under compressive straining. The corresponding electrical performance changes and energy diagrams systematically illustrate the intrinsic mechanism. This work not only provides in-depth understanding of the piezotronic effect in tuning 2DEG and phonon properties in GaN HEMTs, but also demonstrates a low-cost method to optimize its electronic and thermal properties.

Preparation and novel photoluminescence properties of the self-supporting nanoporous InP thin films

Self-supporting nanoporous InP membranes are prepared by electrochemical etching, and are then first transferred to highly reflective (> 96%) mesoporous GaN (MP-GaN) distributed Bragg reflector (DBR) or quartz substrate. By the modulation of bandgap, the nanoporous InP samples show a strong photoluminescence (PL) peak at 541.2 nm due to the quantum size effect of the nanoporous InP structure. Compared to the nanoporous InP membrane with quartz substrate, the nanoporous membrane transferred to DBR shows a twofold enhancement in PL intensity owing to the high light reflection effect of bottom DBR.

A thin transferable blue light-emitting diode by electrochemical lift-off

We demonstrate a transferable blue light-emitting diode (LED) fabricated using a cost-effective approach. By means of solution-based electrochemical etching, an ultrathin free-standing membrane can be obtained from a commercial III-nitride LED wafer. The membrane, containing a full LED structure (including p-/n-type layers and multiple quantum wells) epitaxially grown on a sapphire substrate, is transferable to foreign substrates with a simple lift-off process facilitated by electrochemical etching. After fabrication, optical properties of the thin film are massively improved, accompanied by a 17-fold enhanced photoluminescence normal to the film surface. Prototype transferable blue LEDs are realized on both a copper-coated glass substrate and a polypropylene substrate. The devices exhibit a high performance with bright emission at 447 nm under electrical injection at room temperature.

RGB Arrays for Micro-Light-Emitting Diode Applications Using Nanoporous GaN Embedded with Quantum Dots

The multiple light scattering of nanoporous (NP) GaN was systematically studied and applied to the color down-conversion for micro-light-emitting diode (LED) display applications. The transport mean free path (TMFP) in NP GaN is 660 nm at 450 nm (light wavelength), and it decreases with a decreasing wavelength. It was observed that the short TMFP of the NP GaN increased the light extinction coefficient at 370 nm by 11 times. Colloidal QDs were loaded into a half 4″ wafer scale NP GaN, and 96 and 100% of light conversion efficiencies for green and red were achieved, respectively. By loading green and red QDs selectively into NP GaN mesas, we demonstrated the RGB microarrays based on the blue-violet pumping light with green and red color converting regions.

Wearable and Ultrasensitive Strain Sensor Based on High-Quality GaN pn Junction Microwire Arrays

With the rapid growth in wearable electronics sensing devices, flexible sensing devices that monitor the human body have shown great promise in personalized healthcare. In the study, high-quality GaN pn junction microwire arrays with different aspect ratios and large-area uniformity are fabricated through an easy, repeatable fabrication process. The piezoelectric coefficient (d₃₃ ) of GaN pn junction microwire arrays increases from 7.23 to 14.46 pm V^-1 with the increasing of the aspect ratio, which is several times higher than that of GaN bulk material. Furthermore, flexible ultrasensitive strain sensor based on GaN microwires with the highest d₃₃ is demonstrated to achieve the maximum open circuit voltage of 10.4 V, and presents excellent durability with stable output signals over 10 000 cycles with a response time of 50 ms. As a flexible and wearable sensor attached to the human skin, the GaN microwire pn junction arrays with such a high degree of uniformity can precisely monitor subtle human pulse and motions, which show great promise in future personalized healthcare.

Enhanced stability of piezoelectric nanogenerator based on GaN/V2O5 core-shell nanowires with capacitive contact

Enhanced stability of a piezoelectric nanogenerator (PNG) was demonstrated using c- and m-axis GaN/V₂O₅ core-shell nanowires (NWs) by analyzing the capacitive coupling of the PNG's output. The NW array grown on GaN thin film was embedded in polydimethylsiloxane (PDMS) matrix, following which the matrix was transferred to an indium (In)-coated PET substrate for achieving superior flexibility of the PNG. The stability of the PNG was enhanced by holding the NW PDMS composite with a PDMS polymer as a bonding material on the PET substrate. The inserted PDMS layer improved the lifetime of the PNG, however, because of the insulating nature of PDMS, the piezoelectric output of GaN NWs was coupled capacitively to In contact on PET substrate and it resulted in a slight degradation of piezoelectric output due to the voltage drop across the bottom capacitive contact. The maximum piezoelectric current was 64 nA and output voltage was 11.9 V from the PNG with c-axis NWs. While the PNG with direct bottom contact exhibited 57% output reduction after 72 000 operation cycles, the PNG with capacitive contact did not show any degradation in stability even after 150 000 cycles.

Nanogenerators as a Sustainable Power Source: State of Art, Applications, and Challenges

A sustainable power source to meet the needs of energy requirement is very much essential in modern society as the conventional sources are depleting. Bioenergy, hydropower, solar, and wind are some of the well-established renewable energy sources that help to attain the need for energy at mega to gigawatts power scale. Nanogenerators based on nano energy are the growing technology that facilitate self-powered systems, sensors, and flexible and portable electronics in the booming era of IoT (Internet of Things). The nanogenerators can harvest small-scale energy from the ambient nature and surroundings for efficient utilization. The nanogenerators were based on piezo, tribo, and pyroelectric effect, and the first of its kind was developed in the year 2006 by Wang et al. The invention of nanogenerators is a breakthrough in the field of ambient energy-harvesting techniques as they are lightweight, easily fabricated, sustainable, and care-free systems. In this paper, a comprehensive review on fundamentals, performance, recent developments, and application of nanogenerators in self-powered sensors, wind energy harvesting, blue energy harvesting, and its integration with solar photovoltaics are discussed. Finally, the outlook and challenges in the growth of this technology are also outlined.

Stable and High Piezoelectric Output of GaN Nanowire-Based Lead-Free Piezoelectric Nanogenerator by Suppression of Internal Screening

A piezoelectric nanogenerator (PNG) that is based on c-axis GaN nanowires is fabricated on flexible substrate. In this regard, c-axis GaN nanowires were grown on GaN substrate using the vapor-liquid-solid (VLS) technique by metal organic chemical vapor deposition. Further, Polydimethylsiloxane (PDMS) was coated on nanowire-arrays then PDMS matrix embedded with GaN nanowire-arrays was transferred on Si-rubber substrate. The piezoelectric performance of nanowire-based flexible PNG was measured, while the device was actuated using a cyclic stretching-releasing agitation mechanism that was driven by a linear motor. The piezoelectric output was measured as a function of actuation frequency ranging from 1 Hz to 10 Hz and a linear tendency was observed for piezoelectric output current, while the output voltages remained constant. A maximum of piezoelectric open circuit voltages and short circuit current were measured 15.4 V and 85.6 nA, respectively. In order to evaluate the feasibility of our flexible PNG for real application, a long term stability test was performed for 20,000 cycles and the device performance was degraded by less than 18%. The underlying reason for the high piezoelectric output was attributed to the reduced free carriers inside nanowires due to surface Fermi-level pinning and insulating metal-dielectric-semiconductor interface, respectively; the former reduced the free carrier screening radially while latter reduced longitudinally. The flexibility and the high aspect ratio of GaN nanowire were the responsible factors for higher stability. Such higher piezoelectric output and the novel design make our device more promising for the diverse range of real applications.

High-Output Lead-Free Flexible Piezoelectric Generator Using Single-Crystalline GaN Thin Film

Piezoelectric generators (PEGs) are a promising power source for future self-powered electronics by converting ubiquitous ambient mechanical energy into electricity. However, most of the high-output PEGs are made from lead zirconate titanate, in which the hazardous lead could be a potential risk to both humans and environment, limiting their real applications. III-Nitride (III-N) can be a potential candidate to make stable, safe, and efficient PEGs due to its high chemical stability and piezoelectricity. Also, PEGs are preferred to be flexible rather than rigid, to better harvest the low-magnitude mechanical energy. Herein, a high-output, lead-free, and flexible PEG (F-PEG) is made from GaN thin film by transferring a single-crystalline epitaxial layer from silicon substrate to a flexible substrate. The output voltage, current density, and power density can reach 28 V, 1 μA·cm^-2, and 6 μW·cm^-2, respectively, by bending the F-PEG. The generated electric power by human finger bending is high enough to light commercial visible light-emitting diodes and charge commercial capacitors. The output performance is maintained higher than 95% of its original value after 10 000-cycle test. This highly stable, high-output, and lead-free GaN thin-film F-PEG has the great potential for future self-powered electronic devices and systems.