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Li Y, Li N, Liu W, Prominski A, Kang S, Dai Y, Liu Y, Hu H, Wai S, Dai S, Cheng Z, Su Q, Cheng P, Wei C, Jin L, Hubbell JA, Tian B, Wang S. Achieving tissue-level softness on stretchable electronics through a generalizable soft interlayer design. Nat Commun 2023; 14:4488. [PMID: 37495580 PMCID: PMC10372055 DOI: 10.1038/s41467-023-40191-3] [Citation(s) in RCA: 22] [Impact Index Per Article: 22.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/24/2023] [Accepted: 07/18/2023] [Indexed: 07/28/2023] Open
Abstract
Soft and stretchable electronics have emerged as highly promising tools for biomedical diagnosis and biological studies, as they interface intimately with the human body and other biological systems. Most stretchable electronic materials and devices, however, still have Young's moduli orders of magnitude higher than soft bio-tissues, which limit their conformability and long-term biocompatibility. Here, we present a design strategy of soft interlayer for allowing the use of existing stretchable materials of relatively high moduli to versatilely realize stretchable devices with ultralow tissue-level moduli. We have demonstrated stretchable transistor arrays and active-matrix circuits with moduli below 10 kPa-over two orders of magnitude lower than the current state of the art. Benefiting from the increased conformability to irregular and dynamic surfaces, the ultrasoft device created with the soft interlayer design realizes electrophysiological recording on an isolated heart with high adaptability, spatial stability, and minimal influence on ventricle pressure. In vivo biocompatibility tests also demonstrate the benefit of suppressing foreign-body responses for long-term implantation. With its general applicability to diverse materials and devices, this soft-interlayer design overcomes the material-level limitation for imparting tissue-level softness to a variety of bioelectronic devices.
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Affiliation(s)
- Yang Li
- Pritzker School of Molecular Engineering, The University of Chicago, Chicago, IL, 60637, USA
| | - Nan Li
- Pritzker School of Molecular Engineering, The University of Chicago, Chicago, IL, 60637, USA
| | - Wei Liu
- Pritzker School of Molecular Engineering, The University of Chicago, Chicago, IL, 60637, USA
| | | | - Seounghun Kang
- Pritzker School of Molecular Engineering, The University of Chicago, Chicago, IL, 60637, USA
| | - Yahao Dai
- Pritzker School of Molecular Engineering, The University of Chicago, Chicago, IL, 60637, USA
| | - Youdi Liu
- Pritzker School of Molecular Engineering, The University of Chicago, Chicago, IL, 60637, USA
| | - Huawei Hu
- Pritzker School of Molecular Engineering, The University of Chicago, Chicago, IL, 60637, USA
| | - Shinya Wai
- Pritzker School of Molecular Engineering, The University of Chicago, Chicago, IL, 60637, USA
| | - Shilei Dai
- Pritzker School of Molecular Engineering, The University of Chicago, Chicago, IL, 60637, USA
| | - Zhe Cheng
- Department of Chemistry, The University of Chicago, Chicago, IL, 60637, USA
| | - Qi Su
- Pritzker School of Molecular Engineering, The University of Chicago, Chicago, IL, 60637, USA
| | - Ping Cheng
- Pritzker School of Molecular Engineering, The University of Chicago, Chicago, IL, 60637, USA
| | - Chen Wei
- Department of Mechanical and Aerospace Engineering, University of California Los Angeles, Los Angeles, CA, 90095, USA
| | - Lihua Jin
- Department of Mechanical and Aerospace Engineering, University of California Los Angeles, Los Angeles, CA, 90095, USA
| | - Jeffrey A Hubbell
- Pritzker School of Molecular Engineering, The University of Chicago, Chicago, IL, 60637, USA
| | - Bozhi Tian
- Department of Chemistry, The University of Chicago, Chicago, IL, 60637, USA
| | - Sihong Wang
- Pritzker School of Molecular Engineering, The University of Chicago, Chicago, IL, 60637, USA.
- Nanoscience and Technology Division and Center for Molecular Engineering, Argonne National Laboratory, Lemont, IL, 60439, USA.
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Chawanpunyawat T, Chasing P, Nalaoh P, Maitarad P, Sudyodsuk T, Promarak V. Rational Design of Chrysene-Based Hybridized Local and Charge-Transfer Molecules as Efficient Non-Doped Deep-Blue Emitters for Simple-Structured Electroluminescent Devices. Chem Asian J 2021; 16:4145-4154. [PMID: 34716663 DOI: 10.1002/asia.202101154] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/07/2021] [Revised: 10/29/2021] [Indexed: 01/12/2023]
Abstract
Herein, we present a molecular design of chrysene-based deep-blue emissive materials (TC, TpPC, TpXC, and TmPC), in which chrysene as a core is functionalized with different triphenylamine moieties to realize a fine-tuning deep-blue fluorescence with superior electroluminescent (EL) performance. The photophysical analyses and density functional theory (DFT) calculations disclose that TC, TpPC, and TpXC possess HLCT characteristics with intense deep-blue emission in the solid-state, good hole-transporting ability, and high thermal and electrochemical stabilities. They are successfully employed as non-doped emitters in simple structured OLEDs (ITO/PEDOT : PSS : NF/emitter/TPBi/LiF : Al). In particular, TC-based device emits a deep-blue light with an emission peak at 446 nm and CIE color coordinates of (0.148, 0.096), a maximum external quantum efficiency (EQEmax ) of 4.31%, and a low turn-on voltage of 2.8 V.
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Affiliation(s)
- Thanyarat Chawanpunyawat
- Department of Materials Science and Engineering School of Molecular Science and Engineering, Vidyasirimedhi Institute of Science and Technology, Wangchan, Rayong, 21210, Thailand
| | - Pongsakorn Chasing
- Department of Materials Science and Engineering School of Molecular Science and Engineering, Vidyasirimedhi Institute of Science and Technology, Wangchan, Rayong, 21210, Thailand
| | - Phattananawee Nalaoh
- Department of Materials Science and Engineering School of Molecular Science and Engineering, Vidyasirimedhi Institute of Science and Technology, Wangchan, Rayong, 21210, Thailand
| | - Phornphimon Maitarad
- Research Center of Nano Science and Technology, Shanghai University, Shanghai, 200444, P. R. China
| | - Taweesak Sudyodsuk
- Department of Materials Science and Engineering School of Molecular Science and Engineering, Vidyasirimedhi Institute of Science and Technology, Wangchan, Rayong, 21210, Thailand
| | - Vinich Promarak
- Department of Materials Science and Engineering School of Molecular Science and Engineering, Vidyasirimedhi Institute of Science and Technology, Wangchan, Rayong, 21210, Thailand.,Research Network of NANOTEC-VISTEC on Nanotechnology for Energy School of Molecular Science and Engineering Department, Vidyasirimedhi Institute of Science and Technology, Wangchan, Rayong, 21210, Thailand
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Sensitive and selective detection of Cu2+ and Pb2+ ions using Field Effect Transistor (FET) based on L-Cysteine anchored PEDOT:PSS/rGO composite. Chem Phys Lett 2020. [DOI: 10.1016/j.cplett.2020.138056] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/31/2023]
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Tang X, Kwon HJ, Hong J, Ye H, Wang R, Yun DJ, Park CE, Jeong YJ, Lee HS, Kim SH. Direct Printing of Asymmetric Electrodes for Improving Charge Injection/Extraction in Organic Electronics. ACS APPLIED MATERIALS & INTERFACES 2020; 12:33999-34010. [PMID: 32633116 DOI: 10.1021/acsami.0c08683] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Engineering the energy levels of organic conducting materials can be useful for developing high-performance organic field-effect transistors (OFETs), whose electrodes must be well controlled to facilitate easy charge carrier transport from the source to drain through an active channel. However, symmetric source and drain electrodes that have the same energy levels are inevitably unfavorable for either charge injection or charge extraction. In this study, asymmetric source and drain electrodes are simply prepared using the electrohydrodynamic (EHD)-jet printing technique after the careful work function engineering of organic conducting material composites. Two types of additives effectively tune the energy levels of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate-based composites. These solutions are alternately patterned using the EHD-jet printing process, where the use of an electric field makes fine jet control that enables to directly print asymmetric electrodes. The asymmetric combination of EHD-printed electrodes helps in obtaining advanced charge transport properties in p-type and n-type OFETs, as well as their organic complementary inverters. This strategy is believed to provide useful guidelines for the facile patterning of asymmetric electrodes, enabling the desirable properties of charge injection and extraction to be achieved in organic electronic devices.
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Affiliation(s)
- Xiaowu Tang
- Department of Advanced Organic Materials Engineering, Yeungnam University, Gyeongsan 38541, Korea
| | - Hyeok-Jin Kwon
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
| | - Jisu Hong
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
| | - Heqing Ye
- Department of Advanced Organic Materials Engineering, Yeungnam University, Gyeongsan 38541, Korea
| | - Rixuan Wang
- Department of Advanced Organic Materials Engineering, Yeungnam University, Gyeongsan 38541, Korea
| | - Dong-Jin Yun
- Analytical Engineering Group, Samsung Advanced Institute of Technology, Suwon 16678, Republic of Korea
| | - Chan Eon Park
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
| | - Yong Jin Jeong
- Department of Materials Science & Engineering, Korea National University of Transportation, Chungju 27469, Republic of Korea
| | - Hwa Sung Lee
- Department of Materials Science and Chemical Engineering, Hanyang University, Ansan 15588, Republic of Korea
| | - Se Hyun Kim
- Department of Advanced Organic Materials Engineering, Yeungnam University, Gyeongsan 38541, Korea
- School of Chemical Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea
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Woon KL, Wong WS, Chanlek N, Nakajima H, Tunmee S, Lee VS, Ariffin A, Songsiriritthigul P. Work function modification of PEDOT:PSS by mixing with barium acetylacetonate. RSC Adv 2020; 10:17673-17680. [PMID: 35515618 PMCID: PMC9053639 DOI: 10.1039/d0ra02575e] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/20/2020] [Accepted: 04/23/2020] [Indexed: 11/21/2022] Open
Abstract
Poly(3,4-ethylenedioxythiophene)polystyrene sulfonate (PEDOT:PSS) is often used as a hole injection and extractor for various organic electronic devices. This study investigated whether it is possible to n-dope PEDOT:PSS with barium acetylacetonate (Ba(acac)2) to change its work function so that to be more suitable for electron injection and extraction. Molecular dynamics simulations suggested that barium cations can interact with the aromatic rings of PEDOT and the negatively charged sulfonate in PSS. At high doping concentration, we found that PEDOT became dedoped and precipitated resulting in a clear solution after filtration. The absence of the absorption peak of PEDOT at 263 nm indicates the removal of PEDOT after filtration. The shift in O 1s to a lower binding energy as seen in X-ray photoelectron spectroscopy suggested that the polystyrene sulfonic acids are being ionized to form barium polystyrene sulfonate (Ba–PSS). By spin-coating the solution on top of indium tin oxide, the work function can be adjusted to as low as 3.6 eV. The ability of such a mixture to inject and extract electrons is demonstrated using 2,7-bis(diphenylphosphoryl)-9,9′-spirobifluorene as an electron transporting layer. We attributed the lowering of the work function as the result of the formation of an interfacial dipole as large as 1.37 eV at the ITO/Ba–PSS interface. Modification of poly(3,4-ethylenedioxythiophene)polystyrene sulfonate as electron injection layer.![]()
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Affiliation(s)
- K. L. Woon
- Low Dimensional Material Research Center
- Department of Physics
- University Malaya
- Kuala Lumpur
- Malaysia
| | - W. S. Wong
- Low Dimensional Material Research Center
- Department of Physics
- University Malaya
- Kuala Lumpur
- Malaysia
| | - N. Chanlek
- Synchrotron Light Research Institute
- Nakhon Ratchasima
- Thailand
| | - H. Nakajima
- Synchrotron Light Research Institute
- Nakhon Ratchasima
- Thailand
| | - S. Tunmee
- Synchrotron Light Research Institute
- Nakhon Ratchasima
- Thailand
| | - V. S. Lee
- Department of Chemistry
- Faculty of Science
- University Malaya
- Kuala Lumpur
- Malaysia
| | - A. Ariffin
- Department of Chemistry
- Faculty of Science
- University Malaya
- Kuala Lumpur
- Malaysia
| | - P. Songsiriritthigul
- Research Network NANOTECH-SUT on Advanced Nanomaterials and Characterization
- School of Physics
- Suranaree University of Technology
- Nakhon Ratchasima
- Thailand
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Li Y, Lou H, Wang F, Pang Y, Qiu X. Synergetic Effect of Perfluorooctanoic Acid on the Preparation of Poly(3,4‐ethylenedioxythiophene): Lignosulfonate Aqueous Dispersions with High Film Conductivity. ChemistrySelect 2019. [DOI: 10.1002/slct.201902856] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
Affiliation(s)
- Yuda Li
- School of Chemical Engineering and PharmacyKey Laboratory for Green Chemical Process of Ministry of EducationWuhan Institute of TechnologyLiuFang Campus, No.206 Guanggu 1st road, Donghu New & High Technology Development Zone Wuhan P.R. China
- School of Chemistry and Chemical EngineeringGuangdong Provincial Engineering Research Center for Green Fine ChemicalsSouth China University of TechnologyWushan Campus 381 Wushan Road, Tianhe District Guangzhou P.R. China
| | - Hongming Lou
- School of Chemistry and Chemical EngineeringGuangdong Provincial Engineering Research Center for Green Fine ChemicalsSouth China University of TechnologyWushan Campus 381 Wushan Road, Tianhe District Guangzhou P.R. China
| | - Feng Wang
- School of Chemical Engineering and PharmacyKey Laboratory for Green Chemical Process of Ministry of EducationWuhan Institute of TechnologyLiuFang Campus, No.206 Guanggu 1st road, Donghu New & High Technology Development Zone Wuhan P.R. China
| | - Yuxia Pang
- School of Chemistry and Chemical EngineeringGuangdong Provincial Engineering Research Center for Green Fine ChemicalsSouth China University of TechnologyWushan Campus 381 Wushan Road, Tianhe District Guangzhou P.R. China
| | - Xueqing Qiu
- School of Chemistry and Chemical EngineeringGuangdong Provincial Engineering Research Center for Green Fine ChemicalsSouth China University of TechnologyWushan Campus 381 Wushan Road, Tianhe District Guangzhou P.R. China
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Boosting the ambipolar field-effect transistor performance of a DPP-based copolymer via electrohydrodynamic-jet direct writing. J IND ENG CHEM 2019. [DOI: 10.1016/j.jiec.2019.06.019] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/23/2022]
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Engmann S, Barito AJ, Bittle EG, Giebink NC, Richter LJ, Gundlach DJ. Higher order effects in organic LEDs with sub-bandgap turn-on. Nat Commun 2019; 10:227. [PMID: 30651556 PMCID: PMC6335427 DOI: 10.1038/s41467-018-08075-z] [Citation(s) in RCA: 31] [Impact Index Per Article: 6.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/22/2018] [Accepted: 12/14/2018] [Indexed: 11/08/2022] Open
Abstract
Spin-dependent nonlinear processes in organic materials such as singlet-fission and triplet-triplet annihilation could increase the performance for photovoltaics, detectors, and light emitting diodes. Rubrene/C60 light emitting diodes exhibit a distinct low voltage (half-bandgap) threshold for emission. Two origins for the low voltage turn-on have been proposed: (i) Auger assisted energy up-conversion, and (ii) triplet-triplet annihilation. We test these proposals by systematically altering the rubrene/C60 interface kinetics by introducing thin interlayers. Quantitative analysis of the unmodified rubrene/C60 device suggests that higher order processes can be ruled out as the origin of the sub-bandgap turn-on. Rather, band-to-band recombination is the most likely radiative recombination process. However, insertion of a bathocuproine layer yields a 3-fold increase in luminance compared to the unmodified device. This indicates that suppression of parasitic interface processes by judicious modification of the interface allows a triplet-triplet annihilation channel to be observed.
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Affiliation(s)
- Sebastian Engmann
- Theiss Research, 7411 Eads Avenue, La Jolla, CA, 92037, USA.
- Nanoscale Device Characterization Division, National Institute of Standards and Technology, 101 Bureau Drive, Gaithersburg, MD, 20899, USA.
| | - Adam J Barito
- Nanoscale Device Characterization Division, National Institute of Standards and Technology, 101 Bureau Drive, Gaithersburg, MD, 20899, USA
| | - Emily G Bittle
- Nanoscale Device Characterization Division, National Institute of Standards and Technology, 101 Bureau Drive, Gaithersburg, MD, 20899, USA
| | - Noel C Giebink
- Department of Electrical Engineering, The Pennsylvania State University, Electrical Engineering West, State College, PA, 16801, USA
| | - Lee J Richter
- Materials Science and Engineering Division, National Institute of Standards and Technology, 101 Bureau Drive, Gaithersburg, MD, 20899, USA
| | - David J Gundlach
- Nanoscale Device Characterization Division, National Institute of Standards and Technology, 101 Bureau Drive, Gaithersburg, MD, 20899, USA.
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