1
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Zhang Y, Dou F, Zhou Y, Zhao X, Chen J, Wang C, Wang S. Ternary Electrical Memory Devices Based on Polycarbazole: SnO 2 Nanoparticles Composite Material. Polymers (Basel) 2022; 14:polym14071494. [PMID: 35406367 PMCID: PMC9002687 DOI: 10.3390/polym14071494] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/05/2022] [Revised: 03/29/2022] [Accepted: 03/30/2022] [Indexed: 02/05/2023] Open
Abstract
In this paper, a D–A polymer (PIB) containing carbazole as the donor group in the main chain and benzimidazole benzisoindolinone as the acceptor group was synthesized by Suzuki reaction. The Suzuki reaction, also known as the Suzuki coupling reaction, is a relatively new organic coupling reaction in which aryl or alkenyl boronic acids or boronic acid esters react with chlorine, bromine, iodoaromatic hydrocarbons or alkenes under the catalysis of zerovalent palladium complexes cross-coupling. A series of devices were fabricated by a spin-coating approach, and the devices all exhibited ternary resistance switching storage behavior. Among them, the composite device with the mass fraction of SnO2 NPs of 5 wt% has the best storage performance, with a threshold voltage of −0.4 V and a switching current ratio of 1:101.5:104.5. At the same time, the current of the device remained stable after a 3-h test. Furthermore, after 103 cycles, the current has no obvious attenuation. The device has good stability and continuity. Moreover, the conduction mechanism is further revealed. Inorganic nanoparticle composite devices have splendid memory performances and exhibit underlying application significance in storing data.
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Affiliation(s)
- Yingna Zhang
- School of Chemical Engineering and Materials, Heilongjiang University, Harbin 150080, China; (Y.Z.); (F.D.); (Y.Z.)
| | - Feng Dou
- School of Chemical Engineering and Materials, Heilongjiang University, Harbin 150080, China; (Y.Z.); (F.D.); (Y.Z.)
| | - Yijia Zhou
- School of Chemical Engineering and Materials, Heilongjiang University, Harbin 150080, China; (Y.Z.); (F.D.); (Y.Z.)
| | - Xiaofeng Zhao
- School of Electronic Engineering, Heilongjiang University, Harbin 150080, China;
| | - Jiangshan Chen
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates, South China University of Technology, Guangzhou 510640, China;
| | - Cheng Wang
- School of Chemical Engineering and Materials, Heilongjiang University, Harbin 150080, China; (Y.Z.); (F.D.); (Y.Z.)
- Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, Heilongjiang University, Harbin 150080, China
- Correspondence: (C.W.); (S.W.)
| | - Shuhong Wang
- School of Chemical Engineering and Materials, Heilongjiang University, Harbin 150080, China; (Y.Z.); (F.D.); (Y.Z.)
- Correspondence: (C.W.); (S.W.)
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2
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Zhou Y, Zhao X, Chen J, Gao M, He Z, Wang S, Wang C. Ternary Flash Memory with a Carbazole-Based Conjugated Copolymer: WS 2 Composites as Active Layers. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2022; 38:3113-3121. [PMID: 35239348 DOI: 10.1021/acs.langmuir.1c03089] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
For nonvolatile memory devices, the design and synthesis of their substrate materials are very important. Due to the versatility and large-area fabrication of the low-temperature spin coating process, organic/inorganic nanomaterials as active layers of memory devices have been deeply studied. Inorganic nanoparticles can engage in interactions with polymers via external voltage. WS2 NPs have a large specific surface area and good conductivity. They can be used as the charge trap center in the active layer, which is conducive to the charge transfer in the active layer. Poly[2,7-9-(9-heptadecanyl)-9H-carbazole-co-benzo[4,5] imidazole[2,1-α] isoindol-11-one] (PIIO) was synthesized via the Suzuki coupling reaction. ITO/PIIO/Al and ITO/PIIO:WS2 NP/Al devices were prepared by the spin coating method and vacuum evaporation technology. All devices showed tristable switching behavior. The influence of the WS2 mass fraction on memory performance was studied. The device composite with 6 wt % WS2 NPs showed the best storage features. The OFF/ON1/ON2 current ratio was 1: 1.11 × 101: 2.03 × 104, and the threshold voltage Vth1/Vth2 was -0.60 V/-1.05 V. The device is steady for 12,000 s in three states-high-resistance state (HRS), intermediate state (IRS), and low-resistance state (LRS). After reading 3500 times, the switch-state current displayed no obvious attenuation. This work shows that the polymer and its composites have broad prospects in next-generation nonvolatile storage.
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Affiliation(s)
- Yijia Zhou
- School of Chemical Engineering and Materials, Heilongjiang University, Harbin 150080, P. R. China
| | - Xiaofeng Zhao
- School of Electronic Engineering, Heilongjiang University, Harbin 150080, P. R. China
| | - Jiangshan Chen
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, P. R. China
| | - Meng Gao
- School of Chemical Engineering and Materials, Heilongjiang University, Harbin 150080, P. R. China
| | - Zhaohua He
- School of Chemical Engineering and Materials, Heilongjiang University, Harbin 150080, P. R. China
| | - Shuhong Wang
- School of Chemical Engineering and Materials, Heilongjiang University, Harbin 150080, P. R. China
| | - Cheng Wang
- School of Chemical Engineering and Materials, Heilongjiang University, Harbin 150080, P. R. China
- South China Advanced Institute for Soft Matter Science and Technology, South China University of Technology, Guangzhou 510640, P. R. China
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3
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Dou F, Zhao X, Zhang W, Zhang Y, Gao M, Chen J, Wang S, Wang C. Non-volatile ternary memristors based on a polymer containing a carbazole donor with CuO NPs embedded. NEW J CHEM 2022. [DOI: 10.1039/d1nj04711f] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
A D–A-type polymer PCz–BMBI was synthesized and non-volatile ternary memory devices of ITO/PCz–BMBI:CuO/Al were fabricated with an ON2/ON1/OFF ratio of 105.3 : 102.3 : 1.
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Affiliation(s)
- Feng Dou
- School of Chemical Engineering and Materials, Heilongjiang University, Harbin 150080, P. R. China
| | - Xiaofeng Zhao
- Heilongjiang Provincial Key Laboratory of Micro-nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, P. R. China
| | - Wanying Zhang
- School of Chemical Engineering and Materials, Heilongjiang University, Harbin 150080, P. R. China
| | - Yingna Zhang
- School of Chemical Engineering and Materials, Heilongjiang University, Harbin 150080, P. R. China
| | - Meng Gao
- School of Chemical Engineering and Materials, Heilongjiang University, Harbin 150080, P. R. China
| | - Jiangshan Chen
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates, South China University of Technology, Guangzhou 510640, P. R. China
| | - Shuhong Wang
- School of Chemical Engineering and Materials, Heilongjiang University, Harbin 150080, P. R. China
| | - Cheng Wang
- School of Chemical Engineering and Materials, Heilongjiang University, Harbin 150080, P. R. China
- Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, Heilongjiang University, Harbin 150080, P. R. China
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Li Y, Zhang C, Ling S, Ma C, Zhang J, Jiang Y, Zhao R, Li H, Lu J, Zhang Q. Toward Highly Robust Nonvolatile Multilevel Memory by Fine Tuning of the Nanostructural Crystalline Solid-State Order. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2100102. [PMID: 33788423 DOI: 10.1002/smll.202100102] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/07/2021] [Revised: 02/01/2021] [Indexed: 06/12/2023]
Abstract
Organic resistive memory (ORM) offers great promise for next-generation high-density multilevel-cell (MLC) data storage. However, the fine tuning of crystalline order among its active layer still remains challenging, which largely restricts ORM behavior. Here, an exceptional solid-state transition from disordered orientations to highly-uniform orientation within the ORM layer is facilely triggered via molecular strategic tailoring. Two diketopyrrolopyrrole-based small molecular analogues (NI1 TDPP and NI2 TDPP) are demonstrated to display different symmetry. The asymmetric NI1 TDPP shows an irregular solid-state texture, while the centro-symmetric NI2 TDPP conforms to an ordered out-of-plane single-crystalline pattern that aligns with the foremost charge transportation along the substrate normal, and exhibits excellent MLC memory characteristics. Moreover, this highly oriented pattern guarantees the large-area film uniformity, leading to the twofold increase in the yield of as-fabricated ORM devices. This study reveals that the solid-state crystalline nanostructural order of organic materials can be controlled by reasonable molecular design to actuate high-performance organic electronic circuits.
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Affiliation(s)
- Yang Li
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu, 215009, China
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, Jiangsu, 215123, China
| | - Cheng Zhang
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, Jiangsu, 215123, China
| | - Songtao Ling
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu, 215009, China
| | - Chunlan Ma
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu, 215009, China
| | - Jinlei Zhang
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu, 215009, China
| | - Yucheng Jiang
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu, 215009, China
| | - Run Zhao
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu, 215009, China
| | - Hua Li
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, Jiangsu, 215123, China
| | - Jianmei Lu
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, Jiangsu, 215123, China
| | - Qichun Zhang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
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5
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Wei J, Li Y, Song P, Yang Y, Ma F. Effect of Polymerization on the Charge-Transfer Mechanism in the One (Two)-Photon Absorption Process of D-A-Type Triphenylamine Derivatives. J Phys Chem A 2021; 125:777-794. [PMID: 33433218 DOI: 10.1021/acs.jpca.0c09309] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/11/2023]
Abstract
To investigate the effect of polymerization (n = 1, 2, 3, and 4) on the charge-transfer (CT) mechanisms in the one (two)-photon absorption (OPA and TPA) process of D-A-type triphenylamine derivatives, charge density difference is used to graphically represent the CT characteristics. A transition density matrix is utilized to reveal the direction of CT on different groups quantitatively. With the n increasing, electrons are mainly transferred between the groups in the middle position of the molecular chain during OPA and TPA processes. Simulated results show that the energy gap and excitation energy have a good linear relationship with the reciprocal of the polymerization degree. Importantly, the polymerization effect can effectively increase the electronic transmission capability, TPA performance, and second hyperpolarizability. Besides, the simplified sum over state model reveals the variation factor of the TPA cross-section and the second static hyperpolarizability. The McRae formula and Bakhshiev formula are used to estimate the difference of dipole moments, which is an important parameter of the second hyperpolarizability. The comprehensive analysis of the nonlinear optical (NLO) parameters of triphenylamine derivatives can provide some significant guidance for molecular design and improve the NLO performance of D-A molecular materials. Also, the thermodynamic parameters can provide some theoretical supports for solving practical problems.
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Affiliation(s)
- Jia Wei
- College of Science, Northeast Forestry University, Harbin, 150040 Heilongjiang, China
| | - Yuanzuo Li
- College of Science, Northeast Forestry University, Harbin, 150040 Heilongjiang, China
| | - Peng Song
- Department of Physics, Liaoning University, Shenyang, 110036 Liaoning, China
| | - Yanhui Yang
- Institute of Advanced Synthesis, School of Chemistry and Molecular Engineering, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing, 211816 Jiangsu, China.,School of Chemical and Biomedical Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Fengcai Ma
- Department of Physics, Liaoning University, Shenyang, 110036 Liaoning, China
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6
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Liu YH, Dadvand A, Titi HM, Hamzehpoor E, Perepichka DF. Halogen bonding vs. π-stacking interactions in new bis(acenaphthylene)dione semiconductors. CrystEngComm 2021. [DOI: 10.1039/d1ce01047f] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/30/2022]
Abstract
A series of new halogenated bis(acenaphthylene)dione (BAN) derivatives was synthesized, and the effect of halogen bonding on both molecular and crystal structure, and charge transport in n-type thin film transistors was investigated.
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Affiliation(s)
- Ying-Hsuan Liu
- Department of Chemistry, McGill University, Montreal, Quebec H3A 0B8, Canada
| | - Afshin Dadvand
- Department of Chemistry, McGill University, Montreal, Quebec H3A 0B8, Canada
| | - Hatem M. Titi
- Department of Chemistry, McGill University, Montreal, Quebec H3A 0B8, Canada
| | - Ehsan Hamzehpoor
- Department of Chemistry, McGill University, Montreal, Quebec H3A 0B8, Canada
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7
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Synthesis, crystal structures, optoelectronic properties and resistive memory application of π-conjugated heteroaromatic molecules. Tetrahedron 2020. [DOI: 10.1016/j.tet.2020.131471] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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8
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Guo C, Zhang Q, Li H, Lu J. Solvent Vapor Annealing Upgraded Orderly Intermolecular Stacking and Crystallinity to Enhance Memory Device Performance. Chem Asian J 2020; 15:2493-2498. [DOI: 10.1002/asia.202000577] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/10/2020] [Revised: 06/08/2020] [Indexed: 11/07/2022]
Affiliation(s)
- Chunxiu Guo
- College of ChemistryChemical Engineering and Materials ScienceCollaborative Innovation Center of Suzhou Nano Science and TechnologySoochow University Suzhou 215123 P. R. China
| | - Qijian Zhang
- College of ChemistryChemical Engineering and Materials ScienceCollaborative Innovation Center of Suzhou Nano Science and TechnologySoochow University Suzhou 215123 P. R. China
| | - Hua Li
- College of ChemistryChemical Engineering and Materials ScienceCollaborative Innovation Center of Suzhou Nano Science and TechnologySoochow University Suzhou 215123 P. R. China
| | - Jianmei Lu
- College of ChemistryChemical Engineering and Materials ScienceCollaborative Innovation Center of Suzhou Nano Science and TechnologySoochow University Suzhou 215123 P. R. China
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9
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Zhang H, Zhao X, Bai J, Hou Y, Wang S, Wang C, Ma D. Ternary Memory Devices Based on Bipolar Copolymers with Naphthalene Benzimidazole Acceptors and Fluorene/Carbazole Donors. Macromolecules 2019. [DOI: 10.1021/acs.macromol.9b02033] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/15/2022]
Affiliation(s)
| | | | | | | | | | | | - Dongge Ma
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, P. R. China
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10
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Zhao K, Yu F, Liu W, Huang Y, Said AA, Li Y, Zhang Q. Unexpected Synthesis, Properties, and Nonvolatile Memory Device Application of Imidazole-Fused Azaacenes. J Org Chem 2019; 85:101-107. [DOI: 10.1021/acs.joc.9b02156] [Citation(s) in RCA: 25] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- Kexiang Zhao
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Fei Yu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Wenbo Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Yinjuan Huang
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Ahmed Ali Said
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Yang Li
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Mathematics and Physics, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, China
| | - Qichun Zhang
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
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11
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Shao JY, Cui BB, Tang JH, Zhong YW. Resistive memory switching of transition-metal complexes controlled by ligand design. Coord Chem Rev 2019. [DOI: 10.1016/j.ccr.2019.05.010] [Citation(s) in RCA: 28] [Impact Index Per Article: 5.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/20/2022]
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12
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Ternary Memristic Effect of Trilayer-Structured Graphene-Based Memory Devices. NANOMATERIALS 2019; 9:nano9040518. [PMID: 30987015 PMCID: PMC6524159 DOI: 10.3390/nano9040518] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/21/2019] [Revised: 03/08/2019] [Accepted: 03/15/2019] [Indexed: 01/19/2023]
Abstract
A tristable memory device with a trilayer structure utilizes poly(methyl methacrylate) (PMMA) sandwiched between double-stacked novel nanocomposite films that consist of 2-(4-tert-butylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole (PBD) doped with graphene oxide (GO). We successfully fabricated devices consisting of single and double GO@PBD nanocomposite films embedded in polymer layers. These devices had binary and ternary nonvolatile resistive switching behaviors, respectively. Binary memristic behaviors were observed for the device with a single GO@PBD nanocomposite film, while ternary behaviors were observed for the device with the double GO@PBD nanocomposite films. The heterostructure GO@PBD/PMMA/GO@PBD demonstrated ternary charge transport on the basis of I–V fitting curves and energy-band diagrams. Tristable memory properties could be enhanced by this novel trilayer structure. These results show that the novel graphene-based memory devices with trilayer structure can be applied to memristic devices. Charge trap materials with this innovative architecture for memristic devices offer a novel design scheme for multi-bit data storage.
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Xiong B, Wang G, Wan L, Xiong T, Zhou C, Liu Y, Zhang P, Yang C, Tang K. Brønsted‐Acid‐Catalyzed
para
‐Selective Diazotization of Anilines with Aryl Diazonium Tetrafluoroborates. ChemistrySelect 2018. [DOI: 10.1002/slct.201800655] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/01/2023]
Affiliation(s)
- Biquan Xiong
- Department of Chemistry and Chemical EngineeringHunan Institute of Science and Technology Yueyang 414006 P.R.China
| | - Gang Wang
- Department of Chemistry and Chemical EngineeringHunan Institute of Science and Technology Yueyang 414006 P.R.China
| | - Liming Wan
- Department of Chemistry and Chemical EngineeringHunan Institute of Science and Technology Yueyang 414006 P.R.China
| | - Tao Xiong
- Department of Chemistry and Chemical EngineeringHunan Institute of Science and Technology Yueyang 414006 P.R.China
| | - Congshan Zhou
- Department of Chemistry and Chemical EngineeringHunan Institute of Science and Technology Yueyang 414006 P.R.China
| | - Yu Liu
- Department of Chemistry and Chemical EngineeringHunan Institute of Science and Technology Yueyang 414006 P.R.China
| | - Panliang Zhang
- Department of Chemistry and Chemical EngineeringHunan Institute of Science and Technology Yueyang 414006 P.R.China
| | - Changan Yang
- Department of Chemistry and Chemical EngineeringHunan Institute of Science and Technology Yueyang 414006 P.R.China
| | - Kewen Tang
- Department of Chemistry and Chemical EngineeringHunan Institute of Science and Technology Yueyang 414006 P.R.China
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14
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Li Y, Wang Z, Zhang C, Gu P, Chen W, Li H, Lu J, Zhang Q. Thiadizoloquinoxaline-Based N-Heteroacenes as Active Elements for High-Density Data-Storage Device. ACS APPLIED MATERIALS & INTERFACES 2018; 10:15971-15979. [PMID: 29682969 DOI: 10.1021/acsami.8b05178] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
A novel thiadiazoloquinoxaline (TQ)-based donor-acceptor (D-A)-type N-heteroacene (Py-1-TQ) has been demonstrated for promising applications in organic multilevel resistive memory devices. Compared with its counterparts (Py-0-TQ and Py-2-TQ), which show flash-type binary memory behaviors, Py-1-TQ exhibits excellent nonvolatile write-once-read-many-times-type ternary memory effects with high ON2/ON1/OFF current ratios (105.8:103.4:1), which can be attributed to the different electron-withdrawing abilities between the pyrazine unit and TQ species that can induce stepwise D-A charge-transfer processes. These results suggest that TQ-based N-heteroacenes can be potentially useful in ultrahigh-density data-storage devices through the rational D-A tuning.
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Affiliation(s)
- Yang Li
- College of Chemistry, Chemical Engineering and Materials Science , Soochow University , Suzhou 215123 , P. R. China
- School of Materials Science and Engineering , Nanyang Technological University , Singapore 639798 , Singapore
| | - Zilong Wang
- School of Materials Science and Engineering , Nanyang Technological University , Singapore 639798 , Singapore
| | - Cheng Zhang
- College of Chemistry, Chemical Engineering and Materials Science , Soochow University , Suzhou 215123 , P. R. China
| | - Peiyang Gu
- School of Materials Science and Engineering , Nanyang Technological University , Singapore 639798 , Singapore
| | - Wangqiao Chen
- School of Materials Science and Engineering , Nanyang Technological University , Singapore 639798 , Singapore
| | - Hua Li
- College of Chemistry, Chemical Engineering and Materials Science , Soochow University , Suzhou 215123 , P. R. China
| | - Jianmei Lu
- College of Chemistry, Chemical Engineering and Materials Science , Soochow University , Suzhou 215123 , P. R. China
| | - Qichun Zhang
- School of Materials Science and Engineering , Nanyang Technological University , Singapore 639798 , Singapore
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15
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Li L, Wen D. Memristic Characteristics from Bistable to Tristable Memory with Controllable Charge Trap Carbon Nanotubes. NANOMATERIALS (BASEL, SWITZERLAND) 2018; 8:E114. [PMID: 29462989 PMCID: PMC5853745 DOI: 10.3390/nano8020114] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/12/2018] [Revised: 02/11/2018] [Accepted: 02/13/2018] [Indexed: 02/02/2023]
Abstract
The incorporation of the one-dimensional carbon nanomaterial carbon nanotubes (CNTs) in poly(methyl methacrylate) (PMMA) was found to successfully develop a resistive switching. It implements memristic characteristics which shift from bistable to tristable memory. The localized current pathways in the organic nanocomposite layers for each intermediate resistive state (IRS) are attributed to the trapping mechanism consistent with the fluorescent measurements. Multi-bit organic memories have attracted considerable interest, which provide an effective way to increase the memory density per unit cell area. This study will be useful for the development and tuning of multi-bit storable organic nanocomposite memory device systems.
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Affiliation(s)
- Lei Li
- Key Laboratories of Senior-Education for Electronic Engineering, Harbin 150080, China.
| | - Dianzhong Wen
- Key Laboratories of Senior-Education for Electronic Engineering, Harbin 150080, China.
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16
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Tang JH, Sun TG, Shao JY, Gong ZL, Zhong YW. Resistive memory devices based on a triphenylamine-decorated non-precious cobalt(ii) bis-terpyridine complex. Chem Commun (Camb) 2017; 53:11925-11928. [PMID: 29044252 DOI: 10.1039/c7cc05806c] [Citation(s) in RCA: 21] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/31/2022]
Abstract
The ITO/active material/Au sandwiched devices of a cobalt(ii) bis-terpyridine complex decorated with two triphenylamine motifs display appealing flash-type resistive switching with a large ON/OFF ratio (>103) and low operating voltages (<±3 V). In contrast, devices with the triphenylamine-appended terpyridine ligand show WORM-type memory behaviour.
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Affiliation(s)
- Jian-Hong Tang
- CAS Key Laboratory of Photochemistry, CAS Research/Education Centre for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China.
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17
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Wang M, Li Z, Li H, He J, Li N, Xu Q, Lu J. Different Steric-Twist-Induced Ternary Memory Characteristics in Nonconjugated Copolymers with Pendant Naphthalene and 1,8-Naphthalimide Moieties. Chem Asian J 2017; 12:2744-2748. [DOI: 10.1002/asia.201701044] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/21/2017] [Revised: 08/15/2017] [Indexed: 01/04/2023]
Affiliation(s)
- Ming Wang
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
| | - Zhuang Li
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
| | - Hua Li
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
| | - Jinghui He
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
| | - Najun Li
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
| | - Qingfeng Xu
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
| | - Jianmei Lu
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
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