Ultrahigh Detectivity and Wide Dynamic Range Ultraviolet Photodetectors Based on BixSn1-xO2 Intermediate Band Semiconductor

Self-powered stable high-performance UV-Vis-NIR broadband photodetector based on PVP-Cobalt@Carbon nanofibers/n-GaAs heterojunction

The self-powered PVP-Co@C nanofibers/n-GaAs heterojunction photodetector (HJPD) was fabricated by electrospinning of the nanofibers onto GaAs. An excellent rectification ratio of 6.60 × 106was obtained fromI-Vmeasurements of the device in the dark. TheI-Vmeasurements of the fabricated device under 365 nm, 395 nm and 850 nm lights, as well asI-Vmeasurements in visible light depending on the light intensity, were performed. The HJPD demonstrated excellent photodetection performance in terms of a good responsivity of ∼225 mA W-1(at -1.72 V) and at zero bias, an impressive detectivity of 6.28 × 1012Jones, and a high on/off ratio of 8.38 × 105, all at 365 nm wavelength. In addition, the maximum external quantum efficiency and NPDR values were 3495% (V = -1.72 V) and 2.60 × 1010W-1(V= 0.0 V), respectively, while the minimum NEP value was ∼10-14W.Hz-1/2for 365 nm atV= 0.V volts. The HJPD also exhibited good long-term stability in air after 30 d without any encapsulation.

Ultrahigh UV Responsivity Quasi-Two-Dimensional BixSn1-xO2 Films Achieved through Surface Reaction

In this study, quasi-two-dimensional BixSn1-xO2 (BTO) thin films were fabricated using a liquid metal transfer method. The ultraviolet (UV) photodetector based on BTO thin films was constructed, and the ultrahigh responsivity of 589 A/W was observed at 300 nm UV light illumination. Interestingly, by dropping ethanol during light-off period, the recovery time induced by the persistent photoconductivity (PPC) effect is reduced from 1.65 × 103 s to 5.71 s. Furthermore, the recovery time can also be reduced by dropping methanol, propylene glycol, NaNO2, and Na2SO3 after light termination. The working mechanisms are attributed to the rapid consumption of holes stored in BTO thin films by reaction with those solutions. This work demonstrates that the BTO thin films have potential applications in high-performance UV detectors and present an innovation route to weaken the PPC effects in semiconductors by introducing chemical liquids on their surface.

Tetrachromatic vision-inspired neuromorphic sensors with ultraweak ultraviolet detection

Sensing and recognizing invisible ultraviolet (UV) light is vital for exploiting advanced artificial visual perception system. However, due to the uncertainty of the natural environment, the UV signal is very hard to be detected and perceived. Here, inspired by the tetrachromatic visual system, we report a controllable UV-ultrasensitive neuromorphic vision sensor (NeuVS) that uses organic phototransistors (OPTs) as the working unit to integrate sensing, memory and processing functions. Benefiting from asymmetric molecular structure and unique UV absorption of the active layer, the as fabricated UV-ultrasensitive NeuVS can detect 370 nm UV-light with the illumination intensity as low as 31 nW cm^-2, exhibiting one of the best optical figures of merit in UV-sensitive neuromorphic vision sensors. Furthermore, the NeuVS array exbibits good image sensing and memorization capability due to its ultrasensitive optical detection and large density of charge trapping states. In addition, the wavelength-selective response and multi-level optical memory properties are utilized to construct an artificial neural network for extract and identify the invisible UV information. The NeuVS array can perform static and dynamic image recognition from the original color image by filtering red, green and blue noise, and significantly improve the recognition accuracy from 46 to 90%.

Surface Engineering in SnO2/Si for High-Performance Broadband Photodetectors

Silicon-based photodetectors are important optoelectronic devices in many fields. Many investigations have been conducted to improve the performance of silicon-based photodetectors, such as spectral responsivity and sensitivity in the ultraviolet band. In this study, we combine the surface structure engineering of silicon with wide-bandgap semiconductor SnO₂ films to realize textured Si-based heterojunction photodetectors. The obtained SnO₂/T-Si photodetectors exhibit high responsivity ranging from ultraviolet to near-infrared light. Under a bias voltage of 1 V, SnO₂/T-Si photodetectors (PDs) with an inverted pyramid texture show the best performance, and the typical responsivities to ultraviolet, visible, and near-infrared light are 0.512, 0.538, 1.88 (800 nm, 67.7 μW/cm²) A/W@1 V, respectively. The photodetectors exhibit short rise and decay times of 18.07 and 29.16 ms, respectively. Our results demonstrate that SnO₂/T-Si can serve as a high-performance broadband photodetector.

Low-voltage-modulated perovskite/organic dual-band photodetectors for visible and near-infrared imaging

Visible and near-infrared (NIR) light dual-band photodetectors (PDs) have potential applications in signal detection, bioimaging, optical communications and safety monitoring. Herein, we report an ultrafast perovskite/organic heterojunction dual-mode PD with a voltage-modulated photoresponse range in visible and NIR spectra. The PD, comprising a perovskite layer to absorb visible light (500-810 nm) and an organic bulk heterojunction layer for NIR light absorption (810-950 nm), exhibited a switchable spectral response in the visible or NIR bands. The voltage-modulated visible and NIR photoresponses of the PD were attributable to controlled charge photogeneration in perovskite and organic blend thin films under different bias polarities. The device exhibited peak responsivities of 93.5 and 102.2 mA/W in the visible and NIR bands, respectively; a high detectivity of 4.3 × 109 Jones (at forward bias of 0.7 V and incident 625 nm light) and 1.6 × 1012 Jones (at reverse bias of -1.5 V and incident 900 nm light); a fast microsecond response time; and a wide dynamic range (>120 dB) both in the visible mode and NIR mode. Also, this voltage-modulated dual-band PD shows promising applications in visible light and NIR imaging, which is proven by demonstrating a PD array with 25 pixels (5 × 5).

Broadening the Spectral Response of Perovskite Photodetector to the Solar-Blind Ultraviolet Region through Phosphor Encapsulation

Hybrid perovskite photodetectors generally exhibit brilliant performance for photodetecting in the visible spectrum but poor detectability in the solar-blind ultraviolet (UV) region. To break through the bottleneck, we demonstrate a novel strategy to broaden the spectral response of perovskite photodetectors to the solar-blind UV region through phosphor encapsulation. The high photoluminescence quantum yield trichromatic phosphor capping layer achieves an extended spectral response to the solar-blind UV region through effectively down-converting the incident UV light into visible light. In addition, an external quantum efficiency of up to 12.13%@265 nm is achieved without bias voltage, while the initial value is near zero. The corresponding spectral responsivity and detectivity are 0.0269 A/W and 7.52 × 10¹¹ Jones, respectively. Thus, the photodetectors show a high photocurrent and on/off ratio, increasing by roughly 2 orders of magnitude. Moreover, the photodetectors exhibit a large linear dynamic range of 105 dB, fast response times of 50.16/51.99 μs, and excellent stability. The practical applications for flame detection and UV-based communication are further explored. This work provides a new way to achieve UV light detection based on perovskite photodetectors. Perhaps, it may also be a promising alternative for wide-band gap semiconductors to realize the urgent pursuit of UV detection.

Improved responsivity of MgZnO film ultraviolet photodetectors modified with vertical arrays ZnO nanowires by light trapping effect

The light trapping effect of ZnO nanowires (NWs) is attracting increasing attention as it effectively enhances the photoelectric effect. In this paper, high-density ZnO NWs are grown on a metal-semiconductor-metal structure MgZnO film UV photodetector (PD) as a light trapping unit. The photogenerated carriers diffuse along the longitudinal axis of the ZnO NWs, then diffuse onto the thin film and are collected by an applied bias electrode. When the device is connected to the NWs, the responsivity is about 12 times higher than that of the pure MgZnO film UV PD with a large light-dark current ratio (4.93 × 10⁴). The array structure of the ZnO NWs enhances the number of photogenerated carriers at the top interface and provides a longer optical path length and a larger surface area. The resulting light trapping effect endows the device with excellent photoelectric properties. In this work, the introduction of NWs not only fundamentally improves the performance of the MgZnO thin film UV PD, but the resulting photodetector also demonstrates a sharp contrast between light trapping UV PD and the MgZnO thin film UV PD.

A Robust and Low-Power Bismuth Doped Tin Oxide Memristor Derived from Coaxial Conductive Filaments

Memristor, processing data storage and logic operation all-in-one, is an advanced configuration for next generation computer. In this work, a bismuth doped tin oxide (Bi:SnO₂ ) memristor with ITO/Bi:SnO₂ /TiN structure has been fabricated. Observing from transmission electron microscope (TEM) for the Bi:SnO₂ device, it is found that the bismuth atoms surround the surface of SnO₂ crystals to form the coaxial Bi conductive filament. The self-compliance current, switching voltage and operating current of Bi:SnO₂ memristor are remarkably smaller than that of ITO/SnO₂ /TiN device. With the content of 4.8% Bi doping, the SET operating power of doped device is 16 µW for ITO/Bi:SnO₂ /TiN memory cell of 0.4 × 0.4 µm² , which is cut down by two orders of magnitude. Hence, the findings in this study suggest that Bi:SnO₂ memristors hold significant potential for application in low power memory and broadening the understanding of existing resistive switching (RS) mechanism.

Integration of Oxide Semiconductor Thin Films with Relaxor-Based Ferroelectric Single Crystals with Large Reversible and Nonvolatile Modulation of Electronic Properties

We report the fabrication of 0.71Pb(Mg_1/3Nb_2/3)O₃-0.29PbTiO₃ (PMN-0.29PT)-based ferroelectric field effect transistors (FeFETs) by the epitaxial growth of cobalt-doped tin dioxide (SnO₂) semiconductor thin films on PMN-0.29PT single crystals. Using such FeFETs we realized in situ, reversible, and nonvolatile manipulation of the electron carrier density and achieved a large nonvolatile modulation of the resistance (∼330%) of the SnO₂:Co films through the polarization switching of PMN-0.29PT at 300 K. Particularly, combining the ferroelectric gating with piezoresponse force microscopy, X-ray diffraction, Hall effect, and magnetoresistance (MR), we rigorously disclose that both sign and magnitude of the MR are intrinsically determined by the electron carrier density, which could modify the s-d exchange interaction of the SnO₂:Co films. Furthermore, we realized multilevel resistance states of the SnO₂:Co films by combining the ferroelectric gating with ultraviolet light illumination, demonstrating that the FeFETs have potential applications in multistate resistive memories and electro-optical devices.

Distinguishable Detection of Ultraviolet, Visible, and Infrared Spectrum with High-Responsivity Perovskite-Based Flexible Photosensors

Distinguishable detection of the ultraviolet, visible, and infrared spectrum is promising and significant for the super visual system of artificial intelligences. However, it is challenging to provide a photosensor with such broad spectral response ability. In this work, the ultraviolet, visible, and infrared spectrum is distinguished by developing serial photosensors based on perovskite/carbon nanotube hybrids. Oraganolead halide perovskites (CH₃ NH₃ PbX₃ ) possess remarkable optoelectronic properties and tunable optical band gaps by changing the halogens, and integration with single-walled carbon nanotubes can further improve their photoresponsivities. The CH₃ NH₃ PbCl₃ -based photosensor shows a responsivity up to 10⁵ A W^-1 to ultraviolet and no obvious response to visible light, which is superior to that of most ultraviolet sensors. The CH₃ NH₃ PbBr₃ -based photosensor exhibits a high responsivity to visible light. Serial devices of the two hybrid photosensors with comparable electric and sensory performances can distinguish the spectrum of ultraviolet, visible, and infrared even with varying light intensities. The photosensors also demonstrate excellent mechanical flexibility and bending stability. By taking full advantages of the oraganolead halide perovskites, this work provides flexible high-responsivity photosensors specialized for ultraviolet, and gives a simple strategy for distinguishable detection of ultraviolet, visible, and infrared spectrum based on the serial flexible photosensors.

Surface-Engineered Nanostructure-Based Efficient Nonpolar GaN Ultraviolet Photodetectors

Surface-engineered nanostructured nonpolar (112̅0) gallium nitride (GaN)-based high-performance ultraviolet (UV) photodetectors (PDs) have been fabricated. The surface morphology of a nonpolar GaN film was modified from pyramidal shape to flat and trigonal nanorods displaying facets along different crystallographic planes. We report the ease of enhancing the photocurrent (5.5-fold) and responsivity (6-fold) of the PDs using a simple and convenient wet chemical-etching-induced surface engineering. The fabricated metal-semiconductor-metal structure-based surface-engineered UV PD exhibited a significant increment in detectivity, that is, from 0.43 to 2.83 (×10⁸) Jones, and showed a very low noise-equivalent power (∼10^-10 W Hz^-1/2). The reliability of the nanostructured PD was ensured via fast switching with a response and decay time of 332 and 995 ms, which were more than five times faster with respect to the unetched pyramidal structure-based UV PD. The improvement in device performance was attributed to increased light absorption, efficient transport of photogenerated carriers, and enhancement in conduction cross section via elimination of recombination/trap centers related to defect states. Thus, the proposed method could be a promising approach to enhance the performance of GaN-based PD technology.

Deep Ultraviolet Copper(I) Thiocyanate (CuSCN) Photodetectors Based on Coplanar Nanogap Electrodes Fabricated via Adhesion Lithography

Adhesion lithography (a-Lith) is a versatile fabrication technique used to produce asymmetric coplanar electrodes separated by a <15 nm nanogap. Here, we use a-Lith to fabricate deep ultraviolet (DUV) photodetectors by combining coplanar asymmetric nanogap electrode architectures (Au/Al) with solution-processable wide-band-gap (3.5-3.9 eV) p-type semiconductor copper(I) thiocyanate (CuSCN). Because of the device's unique architecture, the detectors exhibit high responsivity (≈79 A W^-1) and photosensitivity (≈720) when illuminated with a DUV-range (λ_peak = 280 nm) light-emitting diode at 220 μW cm^-2. Interestingly, the photosensitivity of the photodetectors remains fairly high (≈7) even at illuminating intensities down to 0.2 μW cm^-2. The scalability of the a-Lith process combined with the unique properties of CuSCN paves the way to new forms of inexpensive, yet high-performance, photodetectors that can be manufactured on arbitrary substrate materials including plastic.