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Zhu Y, Yu VWZ, Galli G. First-Principles Investigation of Near-Surface Divacancies in Silicon Carbide. NANO LETTERS 2023; 23:11453-11460. [PMID: 38051297 DOI: 10.1021/acs.nanolett.3c02880] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
The realization of quantum sensors using spin defects in semiconductors requires a thorough understanding of the physical properties of the defects in the proximity of surfaces. We report a study of the divacancy (VSiVC) in 3C-SiC, a promising material for quantum applications, as a function of surface reconstruction and termination with -H, -OH, -F and oxygen groups. We show that a VSiVC close to hydrogen-terminated (2 × 1) surfaces is a robust spin-defect with a triplet ground state and no surface states in the band gap and with small variations of many of its physical properties relative to the bulk, including the zero-phonon line and zero-field splitting. However, the Debye-Waller factor decreases in the vicinity of the surface and our calculations indicate it may be improved by strain-engineering. Overall our results show that the VSiVC close to SiC surfaces is a promising spin defect for quantum applications, similar to its bulk counterpart.
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Affiliation(s)
- Yizhi Zhu
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | - Victor Wen-Zhe Yu
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Giulia Galli
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
- Department of Chemistry, University of Chicago, Chicago, Illinois 60637, United States
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2
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Li J, Poon AW. A 3C-SiC-on-Insulator-Based Integrated Photonic Platform Using an Anodic Bonding Process with Glass Substrates. MICROMACHINES 2023; 14:399. [PMID: 36838099 PMCID: PMC9962413 DOI: 10.3390/mi14020399] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/19/2023] [Revised: 02/02/2023] [Accepted: 02/04/2023] [Indexed: 06/18/2023]
Abstract
Various crystalline silicon carbide (SiC) polytypes are emerging as promising photonic materials due to their wide bandgap energies and nonlinear optical properties. However, their wafer forms cannot readily provide a refractive index contrast for optical confinement in the SiC layer, which makes it difficult to realize a SiC-based integrated photonic platform. In this paper, we demonstrate a 3C-SiC-on-insulator (3C-SiCoI)-based integrated photonic platform by transferring the epitaxial 3C-SiC layer from a silicon die to a borosilicate glass substrate using anodic bonding. By fine-tuning the fabrication process, we demonstrated nearly 100% area transferring die-to-wafer bonding. We fabricated waveguide-coupled microring resonators using sulfur hexafluoride (SF6)-based dry etching and demonstrated a moderate loaded quality (Q) factor of 1.4 × 105. We experimentally excluded the existence of the photorefractive effect in this platform at sub-milliwatt on-chip input optical power levels. This 3C-SiCoI platform is promising for applications, including large-scale integration of linear, nonlinear and quantum photonics.
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3
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Nguyen TK, Yadav S, Truong TA, Han M, Barton M, Leitch M, Guzman P, Dinh T, Ashok A, Vu H, Dau V, Haasmann D, Chen L, Park Y, Do TN, Yamauchi Y, Rogers JA, Nguyen NT, Phan HP. Integrated, Transparent Silicon Carbide Electronics and Sensors for Radio Frequency Biomedical Therapy. ACS NANO 2022; 16:10890-10903. [PMID: 35816450 PMCID: PMC9332346 DOI: 10.1021/acsnano.2c03188] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The integration of micro- and nanoelectronics into or onto biomedical devices can facilitate advanced diagnostics and treatments of digestive disorders, cardiovascular diseases, and cancers. Recent developments in gastrointestinal endoscopy and balloon catheter technologies introduce promising paths for minimally invasive surgeries to treat these diseases. However, current therapeutic endoscopy systems fail to meet requirements in multifunctionality, biocompatibility, and safety, particularly when integrated with bioelectronic devices. Here, we report materials, device designs, and assembly schemes for transparent and stable cubic silicon carbide (3C-SiC)-based bioelectronic systems that facilitate tissue ablation, with the capability for integration onto the tips of endoscopes. The excellent optical transparency of SiC-on-glass (SoG) allows for direct observation of areas of interest, with superior electronic functionalities that enable multiple biological sensing and stimulation capabilities to assist in electrical-based ablation procedures. Experimental studies on phantom, vegetable, and animal tissues demonstrated relatively short treatment times and low electric field required for effective lesion removal using our SoG bioelectronic system. In vivo experiments on an animal model were conducted to explore the versatility of SoG electrodes for peripheral nerve stimulation, showing an exciting possibility for the therapy of neural disorders through electrical excitation. The multifunctional features of SoG integrated devices indicate their high potential for minimally invasive, cost-effective, and outcome-enhanced surgical tools, across a wide range of biomedical applications.
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Affiliation(s)
- Tuan-Khoa Nguyen
- Queensland
Micro and Nanotechnology Centre, Griffith
University, Brisbane, Queensland 4111, Australia
| | - Sharda Yadav
- Queensland
Micro and Nanotechnology Centre, Griffith
University, Brisbane, Queensland 4111, Australia
| | - Thanh-An Truong
- Queensland
Micro and Nanotechnology Centre, Griffith
University, Brisbane, Queensland 4111, Australia
- School
of Mechanical and Manufacturing Engineering, The University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Mengdi Han
- Department
of Biomedical Engineering, College of Future Technology, Peking University, Beijing 100871, China
| | - Matthew Barton
- School
of Nursing and Midwifery, Griffith University, Brisbane, Queensland 4111, Australia
- Menzies
Health Institute Queensland, Brisbane, Queensland 4222, Australia
| | - Michael Leitch
- School
of Nursing and Midwifery, Griffith University, Brisbane, Queensland 4111, Australia
| | - Pablo Guzman
- Queensland
Micro and Nanotechnology Centre, Griffith
University, Brisbane, Queensland 4111, Australia
| | - Toan Dinh
- Centre
for Future Materials, University of Southern
Queensland, Toowoomba, Queensland 4305, Australia
| | - Aditya Ashok
- Australian
Institute for Bioengineering and Nanotechnology, The University of Queensland, Brisbane, Queensland 4072, Australia
| | - Hieu Vu
- School
of Engineering and Built Environment, Griffith
University, Brisbane, Queensland 4215, Australia
| | - Van Dau
- School
of Engineering and Built Environment, Griffith
University, Brisbane, Queensland 4215, Australia
| | - Daniel Haasmann
- Queensland
Micro and Nanotechnology Centre, Griffith
University, Brisbane, Queensland 4111, Australia
| | - Lin Chen
- State
Key Laboratory for Mechanical Behavior of Materials, School of Materials
Science and Engineering, Xi’an Jiaotong
University, Xi’an 710049, Shaanxi, People’s Republic of China
| | - Yoonseok Park
- Querrey
Simpson Institute for Bioelectronics, Northwestern
University, Evanston, Illinois 60208, United States
- Department
of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17104, Republic
of Korea
| | - Thanh Nho Do
- Graduate
School of Biomedical Engineering, The University
of New South Wales, Sydney, New South Wales 2032, Australia
| | - Yusuke Yamauchi
- Australian
Institute for Bioengineering and Nanotechnology, The University of Queensland, Brisbane, Queensland 4072, Australia
- JST-ERATO
Yamauchi Materials Space-Tectonics Project, Kagami Memorial Research
Institute for Science and Technology, Waseda
University, Tokyo 169-0051, Japan
| | - John A. Rogers
- Querrey
Simpson Institute for Bioelectronics, Northwestern
University, Evanston, Illinois 60208, United States
- Department
of Materials Science and Engineering, Department of Mechanical Engineering,
Department of Biomedical Engineering, Departments of Electrical and
Computer Engineering and Chemistry, and Department of Neurological
Surgery, Northwestern University, Evanston, Illinois 60208, United States
| | - Nam-Trung Nguyen
- Queensland
Micro and Nanotechnology Centre, Griffith
University, Brisbane, Queensland 4111, Australia
| | - Hoang-Phuong Phan
- Queensland
Micro and Nanotechnology Centre, Griffith
University, Brisbane, Queensland 4111, Australia
- School
of Mechanical and Manufacturing Engineering, The University of New South Wales, Sydney, New South Wales 2052, Australia
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4
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Ntemou E, Holeňák R, Primetzhofer D. Energy deposition by H and He ions at keV energies in self-supporting, single crystalline SiC foils. Radiat Phys Chem Oxf Engl 1993 2022. [DOI: 10.1016/j.radphyschem.2022.110033] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022]
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Pirnaci M, Spitaleri L, Tenaglia D, Perricelli F, Fragalà ME, Bongiorno C, Gulino A. Systematic Characterization of Plasma-Etched Trenches on 4H-SiC Wafers. ACS OMEGA 2021; 6:20667-20675. [PMID: 34396012 PMCID: PMC8359159 DOI: 10.1021/acsomega.1c02905] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/03/2021] [Accepted: 07/07/2021] [Indexed: 05/24/2023]
Abstract
Silicon carbide power semiconductors overcome some limitations of silicon chips, and therefore, SiC is an attractive candidate for next-generation power electronics. In addition, the number of possible vertical devices that can be obtained on a given surface using the trench technique is significantly larger than that attainable using a planar setup. Moreover, a SiC trench power metal oxide semiconductor field-effect transistor (power MOSFET) structure removes the junction field-effect transistor (JFET) region (that would decrease the current flow width) and improves the channel density, thus reducing the specific electrical resistance. Consequently, in the present study, we report on the chemical bonding state of elements and structural characterization of trenches, obtained using SF6-based plasma etching, on the 4H-SiC polytype substrate. An interferometric algorithm that finds the endpoint to stop etching governed the trench depth. Scanning electron microscopy, transmission electron microscopy, atomic force microscopy, and X-ray photoelectron spectroscopy analyses stated the high quality and uniformity of the trenches. These materials are particularly promising for the fabrication of the SiC MOSFET to be implemented in the manufacturing of power devices.
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Affiliation(s)
| | - Luca Spitaleri
- Department
of Chemical Sciences, University of Catania, Viale Andrea Doria 6, 95125 Catania, Italy
- INSTM
U.d.R. of Catania, Viale
Andrea Doria 6, 95125 Catania, Italy
| | - Dario Tenaglia
- STMicroelectronics, Stradale Primosole, 50, 95121 Catania, Italy
| | - Francesco Perricelli
- Department
of Chemical Sciences, University of Catania, Viale Andrea Doria 6, 95125 Catania, Italy
- INSTM
U.d.R. of Catania, Viale
Andrea Doria 6, 95125 Catania, Italy
| | - Maria Elena Fragalà
- Department
of Chemical Sciences, University of Catania, Viale Andrea Doria 6, 95125 Catania, Italy
- INSTM
U.d.R. of Catania, Viale
Andrea Doria 6, 95125 Catania, Italy
| | | | - Antonino Gulino
- Department
of Chemical Sciences, University of Catania, Viale Andrea Doria 6, 95125 Catania, Italy
- INSTM
U.d.R. of Catania, Viale
Andrea Doria 6, 95125 Catania, Italy
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6
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Nijhuis J, Tran QD, Tran NN, Dinh T, Phan HP, Nguyen NT, Tran T, Losic D, Hessel V. Toward on-board microchip synthesis of CdSe vs. PbSe nanocrystalline quantum dots as a spectral decoy for protecting space assets. REACT CHEM ENG 2021. [DOI: 10.1039/d0re00327a] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Fabrication of the reaction chamber using silicon carbide. (A) A schematic sketch of the fabrication flow; (B) a photograph of a transparent 6 inch SiC-on-glass wafer; (C) the surface morphology of the SiC film.
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Affiliation(s)
- Job Nijhuis
- School of Chemical Engineering and Advanced Materials
- University of Adelaide
- Australia
- Department of Chemical Engineering and Chemistry
- Eindhoven University of Technology
| | - Quy Don Tran
- School of Chemical Engineering and Advanced Materials
- University of Adelaide
- Australia
| | - Nam Nghiep Tran
- School of Chemical Engineering and Advanced Materials
- University of Adelaide
- Australia
- Department of Chemical Engineering
- Can Tho University
| | - Toan Dinh
- Department of Mechanical Engineering
- University of Southern Queensland
- Australia
- Queensland Micro and Nanotechnology Centre
- Griffith University
| | - Hoang-Phuong Phan
- Queensland Micro and Nanotechnology Centre
- Griffith University
- Australia
| | - Nam Trung Nguyen
- Queensland Micro and Nanotechnology Centre
- Griffith University
- Australia
| | - Tung Tran
- School of Chemical Engineering and Advanced Materials
- University of Adelaide
- Australia
| | - Dusan Losic
- School of Chemical Engineering and Advanced Materials
- University of Adelaide
- Australia
| | - Volker Hessel
- School of Chemical Engineering and Advanced Materials
- University of Adelaide
- Australia
- School of Engineering
- University of Warwick
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7
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Cooper O, Phan HP, Wang B, Lowe S, Day CJ, Nguyen NT, Tiralongo J. Functional Microarray Platform with Self-Assembled Monolayers on 3C-Silicon Carbide. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2020; 36:13181-13192. [PMID: 33104368 DOI: 10.1021/acs.langmuir.0c01306] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Currently available bioplatforms such as microarrays and surface plasmon resonators are unable to combine high-throughput multiplexing with label-free detection. As such, emerging microelectromechanical systems (MEMS) and microplasmonics platforms offer the potential for high-resolution, high-throughput label-free sensing of biological and chemical analytes. Therefore, the search for materials capable of combining multiplexing and label-free quantitation is of great significance. Recently, interest in silicon carbide (SiC) as a suitable material in numerous biomedical applications has increased due to its well-explored chemical inertness, mechanical strength, bio- and hemocompatibility, and the presence of carbon that enables the transfer-free growth of graphene. SiC is also multifunctional as both a wide-band-gap semiconductor and an efficient low-loss plasmonics material and thus is ideal for augmenting current biotransducers in biosensors. Additionally, the cubic variant, 3C-SiC, is an extremely promising material for MEMS, being a suitable platform for the easy micromachining of microcantilevers, and as such capable of realizing the potential of real time miniaturized multiplexed assays. The generation of an appropriately functionalized and versatile organic monolayer suitable for the immobilization of biomolecules is therefore critical to explore label-free, multiplexed quantitation of biological interactions on SiC. Herein, we address the use of various silane self-assembled monolayers (SAMs) for the covalent functionalization of monocrystalline 3C-SiC films as a novel platform for the generation of functionalized microarray surfaces using high-throughput glycan arrays as the model system. We also demonstrate the ability to robotically print high throughput arrays on free-standing SiC microstructures. The implementation of a SiC-based label-free glycan array will provide a proof of principle that could be extended to the immobilization of other biomolecules in a similar SiC-based array format, thus making potentially significant advances to the way biological interactions are studied.
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8
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A Temperature-Insensitive Resonant Pressure Micro Sensor Based on Silicon-on-Glass Vacuum Packaging. SENSORS 2019; 19:s19183866. [PMID: 31500306 PMCID: PMC6767015 DOI: 10.3390/s19183866] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/09/2019] [Revised: 09/04/2019] [Accepted: 09/05/2019] [Indexed: 11/24/2022]
Abstract
This paper presents a temperature-insensitive resonant pressure sensor, which is mainly composed of a silicon-on-insulator (SOI) wafer for pressure measurements and a silicon-on-glass (SOG) cap for vacuum packaging. The variations of pressure under measurement bend the pressure sensitive diaphragm and regulate the intrinsic frequencies of the resonators in the device layer. While, variations of temperature cannot significantly change the intrinsic frequencies of the resonators, due to the SOG cap to offset generated thermal stress. Numerical simulations, based on finite element analysis, were conducted to calculate the residual thermal stress and optimize the sensing structures. Experimental results show that the Q-factors of the resonators are higher than 16,000, with a differential pressure sensitivity of 11.89 Hz/kPa, a nonlinearity of 0.01% F.S and a low fitting error of 0.01% F.S with the pressure varying from 100 kPa to 1000 kPa. In particular, a temperature sensitivity of ~1 Hz/°C was obtained in the range of −45 °C to 65 °C, which is one order of magnitude lower than the previously reported counterparts.
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9
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Phan HP, Masud MK, Vadivelu RK, Dinh T, Nguyen TK, Ngo K, Dao DV, Shiddiky MJA, Hossain MSA, Yamauchi Y, Nguyen NT. Transparent crystalline cubic SiC-on-glass electrodes enable simultaneous electrochemistry and optical microscopy. Chem Commun (Camb) 2019; 55:7978-7981. [PMID: 31225573 DOI: 10.1039/c9cc03082d] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/21/2023]
Abstract
This work presents crystalline SiC-on-glass as a transparent, robust, and optically stable electrode for simultaneous electrochemical characterization and optical microscope imaging. Experimental results show a large potential window, as well as excellent stability and repeatability over multiple cyclic voltammetric scans in common redox biomarkers such as ruthenium hexaammine and methylene blue. The high optical transmittance and biocompatibility of SiC-on-glass were also observed, enabling cell culture, electrical stimulation, and high resolution fluorescence imaging. This new platform opens exciting opportunities in multi-functional biosensing-probes and observation.
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Affiliation(s)
- Hoang-Phuong Phan
- Queensland Micro-Nanotechnology Centre, Griffith University, Qld, Australia.
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10
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11
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Racz AS, Menyhard M. Design of Corrosion Resistive SiC Nanolayers. ACS APPLIED MATERIALS & INTERFACES 2018; 10:22851-22856. [PMID: 29894147 DOI: 10.1021/acsami.8b06425] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Recently, we have shown that the protecting layer of nanosize can be produced by means of ion beam mixing (IBM) of a Si/C multilayer system. The corrosion resistance of the layer correlated with the SiC amount and distribution, determined by Auger electron spectroscopy depth profiling. It has also been shown that the IBM of the Si/C system can be well described by TRIDYN simulation. By combining these two findings, it is possible to design protective layers for various arrangements of layer structure and irradiation conditions. Three different multilayer structures (with individual layer thicknesses falling in the range of 10-20 nm) have been irradiated by Ar+ and Xe+ ions at room temperature in the energy and fluence ranges of 40-120 keV and 0.25 × 1016 to 6 × 1016 ion/cm2, respectively. The carbon and silicon depth distributions have been calculated by TRIDYN simulation. From these profiles applying a simple rule for compound formation, the SiC in-depth distributions were calculated. The resulting corrosion resistance has been measured by potentiodynamic corrosion test in 4 M KOH solution. Excellent correlation between these results and the in-depth distribution (calculated by TRIDYN simulation) of SiC has been found. Thus, the design of a protective SiC coatings operating in harsh environments is possible by applying fast and cheap simulation techniques.
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Affiliation(s)
- A S Racz
- Institute for Technical Physics and Materials Science, Centre for Energy Research , Hungarian Academy of Sciences , Konkoly Thege M. út 29-33 , H-1121 Budapest , Hungary
| | - M Menyhard
- Institute for Technical Physics and Materials Science, Centre for Energy Research , Hungarian Academy of Sciences , Konkoly Thege M. út 29-33 , H-1121 Budapest , Hungary
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12
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Md Foisal AR, Phan HP, Dinh T, Nguyen TK, Nguyen NT, Dao DV. A rapid and cost-effective metallization technique for 3C-SiC MEMS using direct wire bonding. RSC Adv 2018; 8:15310-15314. [PMID: 35539501 PMCID: PMC9079978 DOI: 10.1039/c8ra00734a] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/24/2018] [Accepted: 04/12/2018] [Indexed: 11/21/2022] Open
Abstract
This paper presents a simple, rapid and cost-effective wire bonding technique for single crystalline silicon carbide (3C-SiC) MEMS devices. Utilizing direct ultrasonic wedge-wedge bonding, we have demonstrated for the first time the direct bonding of aluminum wires onto SiC films for the characterization of electronic devices without the requirement for any metal deposition and etching process. The bonded joints between the Al wires and the SiC surfaces showed a relatively strong adhesion force up to approximately 12.6-14.5 mN and excellent ohmic contact. The bonded wire can withstand high temperatures above 420 K, while maintaining a notable ohmic contact. As a proof of concept, a 3C-SiC strain sensor was demonstrated, where the sensing element was developed based on the piezoresistive effect in SiC and the electrical contact was formed by the proposed direct-bonding technique. The SiC strain sensor possesses high sensitivity to the applied mechanical strains, as well as exceptional repeatability. The work reported here indicates the potential of an extremely simple direct wire bonding method for SiC for MEMS and microelectronic applications.
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Affiliation(s)
- Abu Riduan Md Foisal
- Queensland Micro-Nanotechnology Centre, Griffith University Queensland Australia
| | - Hoang-Phuong Phan
- Queensland Micro-Nanotechnology Centre, Griffith University Queensland Australia
| | - Toan Dinh
- Queensland Micro-Nanotechnology Centre, Griffith University Queensland Australia
| | - Tuan-Khoa Nguyen
- Queensland Micro-Nanotechnology Centre, Griffith University Queensland Australia
| | - Nam-Trung Nguyen
- Queensland Micro-Nanotechnology Centre, Griffith University Queensland Australia
| | - Dzung Viet Dao
- Queensland Micro-Nanotechnology Centre, Griffith University Queensland Australia
- School of Engineering, Griffith University Queensland Australia
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13
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Nguyen TK, Phan HP, Han J, Dinh T, Md Foisal AR, Dimitrijev S, Zhu Y, Nguyen NT, Dao DV. Highly sensitive p-type 4H-SiC van der Pauw sensor. RSC Adv 2018; 8:3009-3013. [PMID: 35541213 PMCID: PMC9077490 DOI: 10.1039/c7ra11922d] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/30/2017] [Accepted: 01/08/2018] [Indexed: 11/27/2022] Open
Abstract
This paper presents for the first time a p-type 4H silicon carbide (4H-SiC) van der Pauw strain sensor by utilizing the strain induced effect in four-terminal devices. The sensor was fabricated from a 4H-SiC (0001) wafer, using a 1 μm thick p-type epilayer with a concentration of 1018 cm−3. Taking advantage of the four-terminal configuration, the sensor can eliminate the need for resistance-to-voltage conversion which is typically required for two-terminal devices. The van der Pauw sensor also exhibits an excellent repeatability and linearity with a significantly large output voltage in induced strain ranging from 0 to 334 ppm. Various sensors aligned in different orientations were measured and a high sensitivity of 26.3 ppm−1 was obtained. Combining these performances with the excellent mechanical strength, electrical conductivity, thermal stability, and chemical inertness of 4H-SiC, the proposed sensor is promising for strain monitoring in harsh environments. This paper presents for the first time a p-type 4H silicon carbide (4H-SiC) van der Pauw strain sensor by utilizing the strain induced effect in four-terminal devices.![]()
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Affiliation(s)
- Tuan-Khoa Nguyen
- Queensland Micro-Nanotechnology Centre
- Griffith University
- Brisbane
- Australia
| | - Hoang-Phuong Phan
- Queensland Micro-Nanotechnology Centre
- Griffith University
- Brisbane
- Australia
| | - Jisheng Han
- Queensland Micro-Nanotechnology Centre
- Griffith University
- Brisbane
- Australia
| | - Toan Dinh
- Queensland Micro-Nanotechnology Centre
- Griffith University
- Brisbane
- Australia
| | | | - Sima Dimitrijev
- Queensland Micro-Nanotechnology Centre
- Griffith University
- Brisbane
- Australia
| | - Yong Zhu
- Queensland Micro-Nanotechnology Centre
- Griffith University
- Brisbane
- Australia
- School of Engineering
| | - Nam-Trung Nguyen
- Queensland Micro-Nanotechnology Centre
- Griffith University
- Brisbane
- Australia
| | - Dzung Viet Dao
- Queensland Micro-Nanotechnology Centre
- Griffith University
- Brisbane
- Australia
- School of Engineering
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14
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Phan HP, Dowling K, Nguyen TK, Chapin CA, Dinh T, Miller RA, Han J, Iacopi A, Senesky DG, Dao DV, Nguyen NT. Characterization of the piezoresistance in highly doped p-type 3C-SiC at cryogenic temperatures. RSC Adv 2018; 8:29976-29979. [PMID: 35547286 PMCID: PMC9085268 DOI: 10.1039/c8ra05797d] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/07/2018] [Accepted: 08/18/2018] [Indexed: 11/21/2022] Open
Abstract
The piezoresistance in crystalline 3C-SiC epitaxially grown on Si was investigated at low temperatures down to 150 K. The large gauge factor in 3C-SiC indicates its feasibility for sensing applications in cryogenic environments.
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Affiliation(s)
- Hoang-Phuong Phan
- Queensland Micro-Nanotechnology Centre
- Griffith University
- Australia
- Department of Aeronautics and Astronautic
- Stanford University
| | | | - Tuan-Khoa Nguyen
- Queensland Micro-Nanotechnology Centre
- Griffith University
- Australia
| | | | - Toan Dinh
- Queensland Micro-Nanotechnology Centre
- Griffith University
- Australia
| | - Ruth A. Miller
- Department of Aeronautics and Astronautic
- Stanford University
- USA
| | - Jisheng Han
- Queensland Micro-Nanotechnology Centre
- Griffith University
- Australia
| | - Alan Iacopi
- Queensland Micro-Nanotechnology Centre
- Griffith University
- Australia
| | - Debbie G. Senesky
- Department of Aeronautics and Astronautic
- Stanford University
- USA
- Department of Electrical Engineering
- Stanford University
| | - Dzung Viet Dao
- Queensland Micro-Nanotechnology Centre
- Griffith University
- Australia
- School of Engineering
- Griffith University
| | - Nam-Trung Nguyen
- Queensland Micro-Nanotechnology Centre
- Griffith University
- Australia
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15
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Racz AS, Kerner Z, Nemeth A, Panjan P, Peter L, Sulyok A, Vertesy G, Zolnai Z, Menyhard M. Corrosion Resistance of Nanosized Silicon Carbide-Rich Composite Coatings Produced by Noble Gas Ion Mixing. ACS APPLIED MATERIALS & INTERFACES 2017; 9:44892-44899. [PMID: 29206438 DOI: 10.1021/acsami.7b14236] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Ion beam mixing has been used to produce a silicon carbide (SiC)-rich nanolayer for protective coating. Different C/Si/C/Si/C/Si(substrate) multilayer structures (with individual layer thicknesses falling in the range of 10-20 nm) have been irradiated by Ar+ and Xe+ ions at room temperature in the energy and fluence ranges of 40-120 keV and 1-6 × 1016 ion/cm2, respectively. The effects of ion irradiation, including the in-depth distribution of the SiC produced, was determined by Auger electron spectroscopy depth profiling. The thickness of the SiC-rich region was only some nanometers, and it could be tailored by changing the layer structure and the ion irradiation conditions. The corrosion resistance of the layers was investigated by potentiodynamic electrochemical test in 4 M KOH solution. The measured corrosion resistance of the SiC-rich layers was orders of magnitude better than that of pure silicon, and a correlation was found between the corrosion current density and the effective areal density of the SiC.
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Affiliation(s)
- A S Racz
- Institute for Technical Physics and Materials Science, Centre for Energy Research, Hungarian Academy of Sciences , Konkoly Thege M. út 29-33, H-1121 Budapest, Hungary
| | - Z Kerner
- Institute for Technical Physics and Materials Science, Centre for Energy Research, Hungarian Academy of Sciences , Konkoly Thege M. út 29-33, H-1121 Budapest, Hungary
| | - A Nemeth
- Wigner Research Centre for Physics, Hungarian Academy of Sciences , Konkoly-Thege M. út 29-33, H-1121 Budapest, Hungary
| | - P Panjan
- Jožef Stefan Institute , Jamova 39, 1000 Ljubljana, Slovenia
| | - L Peter
- Wigner Research Centre for Physics, Hungarian Academy of Sciences , Konkoly-Thege M. út 29-33, H-1121 Budapest, Hungary
| | - A Sulyok
- Institute for Technical Physics and Materials Science, Centre for Energy Research, Hungarian Academy of Sciences , Konkoly Thege M. út 29-33, H-1121 Budapest, Hungary
| | - G Vertesy
- Institute for Technical Physics and Materials Science, Centre for Energy Research, Hungarian Academy of Sciences , Konkoly Thege M. út 29-33, H-1121 Budapest, Hungary
| | - Z Zolnai
- Institute for Technical Physics and Materials Science, Centre for Energy Research, Hungarian Academy of Sciences , Konkoly Thege M. út 29-33, H-1121 Budapest, Hungary
| | - M Menyhard
- Institute for Technical Physics and Materials Science, Centre for Energy Research, Hungarian Academy of Sciences , Konkoly Thege M. út 29-33, H-1121 Budapest, Hungary
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16
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Nguyen TK, Phan HP, Kamble H, Vadivelu R, Dinh T, Iacopi A, Walker G, Hold L, Nguyen NT, Dao DV. Superior Robust Ultrathin Single-Crystalline Silicon Carbide Membrane as a Versatile Platform for Biological Applications. ACS APPLIED MATERIALS & INTERFACES 2017; 9:41641-41647. [PMID: 29140077 DOI: 10.1021/acsami.7b15381] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Micromachined membranes are promising platforms for cell culture thanks to their miniaturization and integration capabilities. Possessing chemical inertness, biocompatibility, and integration, silicon carbide (SiC) membranes have attracted great interest toward biological applications. In this paper, we present the batch fabrication, mechanical characterizations, and cell culture demonstration of robust ultrathin epitaxial deposited SiC membranes. The as-fabricated ultrathin SiC membranes, with an ultrahigh aspect ratio (length/thickness) of up to 20 000, possess high a fracture strength up to 2.95 GPa and deformation up to 50 μm. A high optical transmittance of above 80% at visible wavelengths was obtained for 50 nm membranes. The as-fabricated membranes were experimentally demonstrated as an excellent substrate platform for bio-MEMS/NEMS cell culture with the cell viability rate of more than 92% after 72 h. The ultrathin SiC membrane is promising for in vitro observations/imaging of bio-objects with an extremely short optical access.
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Affiliation(s)
- Tuan-Khoa Nguyen
- Queensland Micro-Nanotechnology Centre, Griffith University , Nathan, Queensland 4111, Australia
| | - Hoang-Phuong Phan
- Queensland Micro-Nanotechnology Centre, Griffith University , Nathan, Queensland 4111, Australia
| | - Harshad Kamble
- Queensland Micro-Nanotechnology Centre, Griffith University , Nathan, Queensland 4111, Australia
| | - Raja Vadivelu
- Queensland Micro-Nanotechnology Centre, Griffith University , Nathan, Queensland 4111, Australia
| | - Toan Dinh
- Queensland Micro-Nanotechnology Centre, Griffith University , Nathan, Queensland 4111, Australia
| | - Alan Iacopi
- Queensland Micro-Nanotechnology Centre, Griffith University , Nathan, Queensland 4111, Australia
| | - Glenn Walker
- Queensland Micro-Nanotechnology Centre, Griffith University , Nathan, Queensland 4111, Australia
| | - Leonie Hold
- Queensland Micro-Nanotechnology Centre, Griffith University , Nathan, Queensland 4111, Australia
| | - Nam-Trung Nguyen
- Queensland Micro-Nanotechnology Centre, Griffith University , Nathan, Queensland 4111, Australia
| | - Dzung Viet Dao
- Queensland Micro-Nanotechnology Centre, Griffith University , Nathan, Queensland 4111, Australia
- School of Engineering, Griffith University , Gold Coast, Queensland 4217, Australia
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17
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Md Foisal AR, Qamar A, Phan HP, Dinh T, Tuan KN, Tanner P, Streed EW, Dao DV. Pushing the Limits of Piezoresistive Effect by Optomechanical Coupling in 3C-SiC/Si Heterostructure. ACS APPLIED MATERIALS & INTERFACES 2017; 9:39921-39925. [PMID: 29098850 DOI: 10.1021/acsami.7b12128] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
This letter reports a giant opto-piezoresistive effect in p-3C-SiC/p-Si heterostructure under visible-light illumination. The p-3C-SiC/p-Si heterostructure has been fabricated by growing a 390 nm p-type 3C-SiC on a p-type Si substrate using the low pressure chemical vapor deposition (LPCVD) technique. The gauge factor of the heterostructure was found to be 28 under a dark condition; however, it significantly increased to about -455 under illumination of 635 nm wavelength at 3.0 mW/cm2. This gauge factor is over 200 times higher than that of commercial metal strain gauge, 16 times higher than that of 3C-SiC thinfilm, and approximately 5 times larger than that of bulk Si. This enhancement of the gauge factor was attributed to the opto-mechanical coupling effect in p-3C-SiC/p-Si heterostructure. The opto-mechanical coupling effect is the amplified effect of the photoconductivity enhancement and strain-induced band structure modification in the p-type Si substrate. These findings enable extremely high sensitive and robust mechanical sensors, as well as optical sensors at low cost, as no complicated nanofabrication process is required.
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Affiliation(s)
| | | | | | | | | | | | - Erik W Streed
- Centre for Quantum Dynamics, Griffith University , Brisbane, Queensland, Australia 4111
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