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Qin X, Hu J, Liu H, Xu X, Yang F, Sun B, Zhao Y, Huang M, Zhang Y. Performance Regulation of a ZnO/WO x-Based Memristor and Its Application in an Emotion Circuit. J Phys Chem Lett 2023; 14:3039-3046. [PMID: 36946653 DOI: 10.1021/acs.jpclett.3c00063] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The development of a memristor is very important for artificial intelligence and new electronic circuits. In this work, Ag(Al)/ZnO/WOx/FTO memristors are fabricated by magnetron sputtering, and the device performance is further improved through annealing and oxygen supply during sputtering. The experimental data show that the FTO/WOx/ZnO-O2/Ag memristor has the largest high resistance state (HRS)/low resistance state (LRS) resistance ratio and the best durability. Through data fitting and analysis, the switching mechanism of memristors with different top electrodes is investigated. Furthermore, the physical model of the best performance memristor was established by Simulink, and an emotion-monitoring circuit was constructed on this basis. The circuit can be used to monitor and record the mood changes, and the feedback of the emotion monitoring can be fed back to the user to help them adjust the mood.
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Affiliation(s)
- Xizi Qin
- Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education, School of Electrical Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031, People's Republic of China
- School of Physical Science and Technology, Southwest Jiaotong University, Chengdu, Sichuan 610031, People's Republic of China
| | - Junda Hu
- Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education, School of Electrical Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031, People's Republic of China
| | - Hao Liu
- School of Physical Science and Technology, Southwest Jiaotong University, Chengdu, Sichuan 610031, People's Republic of China
| | - Xin Xu
- School of Physical Science and Technology, Southwest Jiaotong University, Chengdu, Sichuan 610031, People's Republic of China
| | - Feng Yang
- Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education, School of Electrical Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031, People's Republic of China
| | - Bai Sun
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
| | - Yong Zhao
- Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education, School of Electrical Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031, People's Republic of China
- College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian 350117, People's Republic of China
| | - Mei Huang
- Southwestern Institute of Physics, Chengdu, Sichuan 610041, People's Republic of China
| | - Yong Zhang
- Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education, School of Electrical Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031, People's Republic of China
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Srivastava S, Thomas JP, Guan X, Leung KT. Induced Complementary Resistive Switching in Forming-Free TiO x/TiO 2/TiO x Memristors. ACS APPLIED MATERIALS & INTERFACES 2021; 13:43022-43029. [PMID: 34463478 DOI: 10.1021/acsami.1c09775] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The undesirable sneak current path is one of the key challenges in high-density memory integration for the emerging cross-bar memristor arrays. This work demonstrates a new heterojunction design of oxide multilayer stacking with different oxygen vacancy contents to manipulate the oxidation state. We show that the bipolar resistive switching (BRS) behavior of the Pt/TiOx/Pt cross-bar structure can be changed to complementary resistive switching (CRS) by introducing a thin TiO2 layer in the middle of the TiOx layer to obtain a Pt/TiOx/TiO2/TiOx/Pt device architecture with a double-junction active matrix. In contrast to the BRS in a single-layer TiOx matrix, the device with a double-junction matrix remains in a high-resistance state in the voltage range below the SET voltage, which makes it an efficient structure to overcome the sneak path constraints of undesired half-selected cells that lead to incorrect output reading. This architecture is capable of eliminating these half-selected cells between the nearby cross-bar cells in a smaller programming voltage range. A simplified model for the switching mechanism can be used to account for the observed high-quality switching performance with excellent endurance and current retention properties.
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Affiliation(s)
- Saurabh Srivastava
- WATLab and Department of Chemistry, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada
- Low Energy Electronics System (LEES), Singapore MIT Alliance for Research and Technology (SMART), 1 Create Way, Singapore 138602, Singapore
| | - Joseph Palathinkal Thomas
- WATLab and Department of Chemistry, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada
| | - Xiaoyi Guan
- WATLab and Department of Chemistry, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada
| | - Kam Tong Leung
- WATLab and Department of Chemistry, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada
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Liang A, Zhang J, Wang F, Jiang Y, Hu K, Shan X, Liu Q, Song Z, Zhang K. Transparent HfO x -based memristor with robust flexibility and synapse characteristics by interfacial control of oxygen vacancies movement. NANOTECHNOLOGY 2021; 32:145202. [PMID: 33321481 DOI: 10.1088/1361-6528/abd3c7] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Hafnium oxides (HfO x ) based flexible memristors were fabricated on polyethylene naphtholate (PEN) substrates to simulate a variety of bio-synapse functions. By optimizing the manufacturing conditions of electrode and active films, it is proved that the TiN/HfO x /W/ITO/PEN bilayer device has robust flexibility and can still be modulated after 2000 times of bending. The memristor device exhibits better symmetrical and linear characteristics with excellent uniformity at lower programming power consumption (∼38 μW). In addition, the essential synaptic behaviors have further been achieved in the devices, including the transition from short-term plasticity to long-term plasticity and spike time-dependent plasticity. Through the analysis of I-V curves and XPS data, a switching mechanism based on HfO x /W interface boundary drift is constructed. It is revealed that the redox reaction caused by W intercalation can effectively regulate the content of oxygen vacancy in HfO x . At the same time, bias-induced interfacial reactions will regulate the movement of oxygen vacancies, which emulates bio-synapse functions and improves the electrical properties of the device.
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Affiliation(s)
- Ange Liang
- Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electronical and Engineering, Tianjin University of Technology, No.391, West Binshui Road, Xiqing District, Tianjin 300384, People's Republic of China
| | - Jingwei Zhang
- Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electronical and Engineering, Tianjin University of Technology, No.391, West Binshui Road, Xiqing District, Tianjin 300384, People's Republic of China
| | - Fang Wang
- Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electronical and Engineering, Tianjin University of Technology, No.391, West Binshui Road, Xiqing District, Tianjin 300384, People's Republic of China
| | - Yutong Jiang
- Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electronical and Engineering, Tianjin University of Technology, No.391, West Binshui Road, Xiqing District, Tianjin 300384, People's Republic of China
| | - Kai Hu
- Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electronical and Engineering, Tianjin University of Technology, No.391, West Binshui Road, Xiqing District, Tianjin 300384, People's Republic of China
| | - Xin Shan
- Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electronical and Engineering, Tianjin University of Technology, No.391, West Binshui Road, Xiqing District, Tianjin 300384, People's Republic of China
| | - Qi Liu
- Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics Chinese Academy of Sciences, Beijing 100029, People's Republic of China
| | - Zhitang Song
- StateKey Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, People's Republic of China
| | - Kailiang Zhang
- Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electronical and Engineering, Tianjin University of Technology, No.391, West Binshui Road, Xiqing District, Tianjin 300384, People's Republic of China
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Srivastava S, Thomas JP, Leung KT. Programmable, electroforming-free TiO x/TaO x heterojunction-based non-volatile memory devices. NANOSCALE 2019; 11:18159-18168. [PMID: 31556429 DOI: 10.1039/c9nr06403f] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Electroforming-free resistive switching in memristors is essential to reliably achieving the performance of high switching speed, high endurance, good signal retention, and low power consumption expected for next-generation computing devices. Although there have been various approaches to resolve the issues observed with the electroforming process in oxide-based memory devices, most of them end up having high SET and RESET voltages and short lifetimes. We present a heterojunction interface of oxygen-vacancy-defect-rich ultrananocrystalline TiOx and TaOx films used as the switching matrix, which enables high-quality electroforming-free switching with a much lower programming voltage (+0.5-0.8 V), a high endurance of over 104 cycles and good retention performance with an estimated device lifetime of over 10 years. The electroforming-free switching behavior is governed by migration of oxygen vacancies driven by electric field localization that is imposed by the ultrananocrystalline nature of the TaOx film, serving as the switching matrix, with the TiOx film serving as an additional oxygen vacancy source to reduce the overall resistivity of TaOx and provide low-bias rectification. The ability to perform electroforming-free resistive switching along with excellent switching repeatability and retention capabilities for various digital and analog programmable voltages enables high scalability and large density integration of the cross-bar ReRAM framework.
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Affiliation(s)
- Saurabh Srivastava
- WATLab and Department of Chemistry, University of Waterloo, 200 University Ave. W., Waterloo, Ontario N2L 3G1, Canada.
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Resistive Switching Memory Devices Based on Body Fluid of Bombyx mori L. MICROMACHINES 2019; 10:mi10080540. [PMID: 31426438 PMCID: PMC6723076 DOI: 10.3390/mi10080540] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/15/2019] [Revised: 08/10/2019] [Accepted: 08/13/2019] [Indexed: 11/21/2022]
Abstract
Resistive switching memory devices are strong candidates for next-generation data storage devices. Biological memristors made from renewable natural biomaterials are very promising due to their biocompatibility, biodegradability, and ecological benignity. In this study, a nonvolatile memristor was fabricated using the body fluid of Bombyx mori as the dielectric layer. The developed Al/Bombyx mori body fluid film/indium tin oxide (ITO) biomemristor exhibited bipolar resistive switching characteristics with a maximum on/off current ratio greater than 104. The device showed a retention time of more than 1 × 104 s without any signs of deterioration, thus proving its good stability and reliability. The resistive switching behavior of the Al/Bombyx mori body fluid film/ITO biological memristor is driven by the formation and breakage of conductive filaments formed by the migration of oxygen ions. This study confirms that Bombyx mori body fluid, a 100% natural, inexpensive, and abundant material, is a potential candidate as a nonvolatile biomemristor material with broad application prospects.
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