1
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Gao Z, Zhang Y, Li X, Zhang X, Chen X, Du G, Hou F, Gu B, Lun Y, Zhao Y, Zhao Y, Qu Z, Jin K, Wang X, Chen Y, Liu Z, Huang H, Gao P, Mostovoy M, Hong J, Cheong SW, Wang X. Mechanical manipulation for ordered topological defects. SCIENCE ADVANCES 2024; 10:eadi5894. [PMID: 38170776 PMCID: PMC10796077 DOI: 10.1126/sciadv.adi5894] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/05/2023] [Accepted: 12/01/2023] [Indexed: 01/05/2024]
Abstract
Randomly distributed topological defects created during the spontaneous symmetry breaking are the fingerprints to trace the evolution of symmetry, range of interaction, and order parameters in condensed matter systems. However, the effective mean to manipulate topological defects into ordered form is elusive due to the topological protection. Here, we establish a strategy to effectively align the topological domain networks in hexagonal manganites through a mechanical approach. It is found that the nanoindentation strain gives rise to a threefold Magnus-type force distribution, leading to a sixfold symmetric domain pattern by driving the vortex and antivortex in opposite directions. On the basis of this rationale, sizeable mono-chirality topological stripe is readily achieved by expanding the nanoindentation to scratch, directly transferring the randomly distributed topological defects into an ordered form. This discovery provides a mechanical strategy to manipulate topological protected domains not only on ferroelectrics but also on ferromagnets/antiferromagnets and ferroelastics.
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Affiliation(s)
- Ziyan Gao
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Yixuan Zhang
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Xiaomei Li
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Xiangping Zhang
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Xue Chen
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Guoshuai Du
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Fei Hou
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Baijun Gu
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Yingzhuo Lun
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Yao Zhao
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Yingtao Zhao
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Zhaoliang Qu
- Institute of Advanced Structure Technology, Beijing Institute of Technology, Beijing 100081, China
| | - Ke Jin
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Xiaolei Wang
- Department of Physics and Optoelectronics, Faculty of Science, Beijing University of Technology, Beijing 100124, China
| | - Yabin Chen
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Zhanwei Liu
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Houbing Huang
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Peng Gao
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Maxim Mostovoy
- Zernile Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, Netherlands
| | - Jiawang Hong
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Sang-Wook Cheong
- Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ 08854, USA
| | - Xueyun Wang
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
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2
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Vogel A, Ruiz Caridad A, Nordlander J, Sarott MF, Meier QN, Erni R, Spaldin NA, Trassin M, Rossell MD. Origin of the Critical Thickness in Improper Ferroelectric Thin Films. ACS APPLIED MATERIALS & INTERFACES 2023; 15:18482-18492. [PMID: 36996320 DOI: 10.1021/acsami.3c00412] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Improper ferroelectrics are expected to be more robust than conventional ferroelectrics against depolarizing field effects and to exhibit a much-desired absence of critical thickness. Recent studies, however, revealed the loss of ferroelectric response in epitaxial improper ferroelectric thin films. Here, we investigate improper ferroelectric hexagonal YMnO3 thin films and find that the polarization suppression, and hence functionality, in the thinner films is due to oxygen off-stoichiometry. We demonstrate that oxygen vacancies form on the film surfaces to provide the necessary charge to screen the large internal electric field resulting from the positively charged YMnO3 surface layers. Additionally, we show that by modifying the oxygen concentration of the films, the phase transition temperatures can be substantially tuned. We anticipate that our findings are also valid for other ferroelectric oxide films and emphasize the importance of controlling the oxygen content and cation oxidation states in ferroelectrics for their successful integration in nanoscale applications.
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Affiliation(s)
- Alexander Vogel
- Electron Microscopy Center, Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland
- Department of Materials, Eidgenössische Technische Hochschule Zürich, 8092 Zürich, Switzerland
| | - Alicia Ruiz Caridad
- Electron Microscopy Center, Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland
| | - Johanna Nordlander
- Department of Materials, Eidgenössische Technische Hochschule Zürich, 8092 Zürich, Switzerland
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Martin F Sarott
- Department of Materials, Eidgenössische Technische Hochschule Zürich, 8092 Zürich, Switzerland
| | - Quintin N Meier
- Université Grenoble Alpes, CNRS, Institut Néel, 38042 Grenoble, France
| | - Rolf Erni
- Electron Microscopy Center, Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland
| | - Nicola A Spaldin
- Department of Materials, Eidgenössische Technische Hochschule Zürich, 8092 Zürich, Switzerland
| | - Morgan Trassin
- Department of Materials, Eidgenössische Technische Hochschule Zürich, 8092 Zürich, Switzerland
| | - Marta D Rossell
- Electron Microscopy Center, Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland
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3
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Deng S, Li J, Småbråten DR, Shen S, Wang W, Zhao J, Tao J, Aschauer U, Chen J, Zhu Y, Zhu J. Critical Role of Sc Substitution in Modulating Ferroelectricity in Multiferroic LuFeO 3. NANO LETTERS 2021; 21:6648-6655. [PMID: 34283627 DOI: 10.1021/acs.nanolett.1c02123] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Understanding how individual dopants or substitutional atoms interact with host lattices enables us to manipulate, control, and improve the functionality of materials. However, because of the intimate coupling among various degrees of freedom in multiferroics, the atomic-scale influence of individual foreign atoms has remained elusive. Here, we unravel the critical roles of individual Sc substitutional atoms in modulating ferroelectricity at the atomic scale of typical multiferroics, Lu1-xScxFeO3, by combining advanced microscopy and theoretical studies. Atomic variations in polar displacement of intriguing topological vortex domains stabilized by Sc substitution are directly correlated with Sc atom-mediated local chemical and electronic fluctuations. The local FeO5 trimerization magnitude and Lu/Sc-O hybridization strength are found to be significantly reinforced by Sc, clarifying the origin of the strong dependence of improper ferroelectricity on Sc content. This study could pave the way for correlating dopant-regulated atomic-scale local structures with global properties to engineer emergent functionalities of numerous chemically doped functional materials.
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Affiliation(s)
- Shiqing Deng
- School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
- School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Jun Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Didrik R Småbråten
- Department of Chemistry, Biochemistry and Pharmaceutical Sciences, University of Bern, 3012 Bern, Switzerland
| | - Shoudong Shen
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Wenbin Wang
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Jun Zhao
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Jing Tao
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Ulrich Aschauer
- Department of Chemistry, Biochemistry and Pharmaceutical Sciences, University of Bern, 3012 Bern, Switzerland
| | - Jun Chen
- School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
| | - Yimei Zhu
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Jing Zhu
- School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
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4
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Zhang Y, Wang W, Xing W, Cheng S, Deng S, Angst M, Yu CP, Lan F, Cheng Z, Mandrus D, Sales B, Shen J, Zhong X, Tai NH, Yu R, Zhu J. Effect of Oxygen Interstitial Ordering on Multiple Order Parameters in Rare Earth Ferrite. PHYSICAL REVIEW LETTERS 2019; 123:247601. [PMID: 31922871 DOI: 10.1103/physrevlett.123.247601] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/17/2019] [Revised: 09/09/2019] [Indexed: 06/10/2023]
Abstract
Oxygen interstitials and vacancies play a key role in modulating the microstructure and properties of nonstoichiometric oxide systems, such as those used for superconductors and multiferroics. Key to understanding the tuning mechanisms resulting from oxygen doping is a knowledge of the precise positions of these lattice defects, and of the interaction both between these defects and with many order parameters. Here, we report how such information can, for the first time, be obtained from a sample of LuFe_{2}O_{4.22} using a range of techniques including advanced electron microscopy, atomic-resolution spectroscopy, and density functional theory calculations. The results provide quantitative atomic details of the crystal unit cell, together with a description of the ferroelastic, ferroelectric, and ferromagnetic order parameters. We elucidate also the interaction between these order parameters and the positions of the oxygen interstitials in the oxygen-enriched sample. The comprehensive analysis of oxygen interstitial ordering provides insights into understanding the coupling among different degrees of freedom in rare earth ferrites and demonstrates that oxygen content regulation is a powerful tool for tuning the microstructure and properties for this class of quantum material.
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Affiliation(s)
- Yang Zhang
- National Center for Electron Microscopy in Beijing, Key Laboratory of Advanced Materials (MOE), The State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Wenbin Wang
- Institute of Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Wandong Xing
- National Center for Electron Microscopy in Beijing, Key Laboratory of Advanced Materials (MOE), The State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Shaobo Cheng
- National Center for Electron Microscopy in Beijing, Key Laboratory of Advanced Materials (MOE), The State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Shiqing Deng
- National Center for Electron Microscopy in Beijing, Key Laboratory of Advanced Materials (MOE), The State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Manuel Angst
- Jülich Centre for Neutron Science JCNS and Peter Grünberg Institut PGI, JARA-FIT, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
| | - Chu-Ping Yu
- National Center for Electron Microscopy in Beijing, Key Laboratory of Advanced Materials (MOE), The State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
- Department of Materials Science and Engineering National Tsing-Hua University, Hsinchu 30013, Taiwan
| | - Fanli Lan
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Zhiying Cheng
- National Center for Electron Microscopy in Beijing, Key Laboratory of Advanced Materials (MOE), The State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - David Mandrus
- Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - Brian Sales
- Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - Jian Shen
- Institute of Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Xiaoyan Zhong
- National Center for Electron Microscopy in Beijing, Key Laboratory of Advanced Materials (MOE), The State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Nyan-Hwa Tai
- Department of Materials Science and Engineering National Tsing-Hua University, Hsinchu 30013, Taiwan
| | - Rong Yu
- National Center for Electron Microscopy in Beijing, Key Laboratory of Advanced Materials (MOE), The State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Jing Zhu
- National Center for Electron Microscopy in Beijing, Key Laboratory of Advanced Materials (MOE), The State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
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5
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Deng S, Wu L, Cheng H, Zheng JC, Cheng S, Li J, Wang W, Shen J, Tao J, Zhu J, Zhu Y. Charge-Lattice Coupling in Hole-Doped LuFe_{2}O_{4+δ}: The Origin of Second-Order Modulation. PHYSICAL REVIEW LETTERS 2019; 122:126401. [PMID: 30978042 DOI: 10.1103/physrevlett.122.126401] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/27/2018] [Revised: 01/20/2019] [Indexed: 06/09/2023]
Abstract
Understanding singularities in ordered structures, such as dislocations in lattice modulation and solitons in charge ordering, offers great opportunities to disentangle the interactions between the electronic degrees of freedom and the lattice. Specifically, a modulated structure has traditionally been expressed in the form of a discrete Fourier series with a constant phase and amplitude for each component. Here, we report atomic scale observation and analysis of a new modulation wave in hole-doped LuFe_{2}O_{4+δ} that requires significant modifications to the conventional modeling of ordered structures. This new modulation with an unusual quasiperiodic singularity can be accurately described only by introducing a well-defined secondary modulation vector in both the phase and amplitude parameter spaces. Correlated with density-functional-theory (DFT) calculations, our results reveal that those singularities originate from the discontinuity of lattice displacement induced by interstitial oxygen in the system. The approach of our work is applicable to a wide range of ordered systems, advancing our understanding of the nature of singularity and modulation.
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Affiliation(s)
- Shiqing Deng
- School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, USA
| | - Lijun Wu
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, USA
| | - Hao Cheng
- Department of Physics, Xiamen University, Xiamen 361005, People's Republic of China
| | - Jin-Cheng Zheng
- Department of Physics, Xiamen University, Xiamen 361005, People's Republic of China
| | - Shaobo Cheng
- School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, USA
| | - Jun Li
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, USA
| | - Wenbin Wang
- Institute of Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, People's Republic of China
| | - Jian Shen
- Department of Physics, Fudan University, Shanghai 200433, People's Republic of China
| | - Jing Tao
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, USA
| | - Jing Zhu
- School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Yimei Zhu
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, USA
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Ribeiro RAP, Longo E, Andrés J, de Lazaro SR. A DFT investigation of the role of oxygen vacancies on the structural, electronic and magnetic properties of ATiO 3 (A = Mn, Fe, Ni) multiferroic materials. Phys Chem Chem Phys 2018; 20:28382-28392. [PMID: 30177981 DOI: 10.1039/c8cp04443k] [Citation(s) in RCA: 21] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/17/2022]
Abstract
In order to achieve deep insight into the multiferroic behavior and electronic properties of intrinsic oxygen vacancies in ATiO3 (A = Mn, Fe, Ni), first-principles calculations based on hybrid density functional theory were carried out for bulk and non-polar (110) surface models. We found that the formation of an oxygen vacancy is accompanied by structural and electronic disorders in the constituent clusters of [TiO6] and [AO6] in ATiO3, that become [TiO5] and [AO5], respectively. This perturbation contributes to the generation of intermediary energy levels in the band gap region, thus narrowing the required excitation energy. In addition, the remaining electrons are mainly trapped in the empty 3d orbitals of the Ti cations neighboring the oxygen vacancy, generating [TiO5]' (3d1) that mediates an antiferromagnetic to ferromagnetic transition in MnTiO3 and FeTiO3 materials. In particular, MnTiO3 surfaces show exposed [TiO4]' species that are responsible for its half-metallic behavior. The present work provides compelling evidence that controlling oxygen vacancies can be a valuable strategy to tailor the multiferroic properties of ATiO3 materials.
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Affiliation(s)
- R A P Ribeiro
- Department of Chemistry, State University of Ponta Grossa, Av. General Carlos Cavalcanti, 4748, 84030-900, Ponta Grossa, PR, Brazil
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7
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Cheng S, Xu C, Deng S, Han MG, Bao S, Ma J, Nan C, Duan W, Bellaiche L, Zhu Y, Zhu J. Interface reconstruction with emerging charge ordering in hexagonal manganite. SCIENCE ADVANCES 2018; 4:eaar4298. [PMID: 29795782 PMCID: PMC5959304 DOI: 10.1126/sciadv.aar4298] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/07/2017] [Accepted: 04/05/2018] [Indexed: 06/08/2023]
Abstract
Multiferroic materials, which simultaneously have multiple orderings, hold promise for use in the next generation of memory devices. We report a novel self-assembled MnO double layer forming at the interface between a multiferroic YMnO3 film and a c-Al2O3 substrate. The crystal structures and the valence states of this MnO double layer were studied by atomically resolved scanning transmission electron microscopy and spectroscopy, as well as density functional theory (DFT) calculations. A new type of charge ordering has been identified within this MnO layer, which also contributes to a polarization along the [001] direction. DFT calculations further establish the occurrence of multiple couplings between charge and lattice in this novel double layer, in addition to the polarization in nearby YMnO3 single layer. The interface reconstruction reported here creates a new playground for emergent physics, such as giant ferroelectricity and strong magnetoelectric coupling, in manganite systems.
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Affiliation(s)
- Shaobo Cheng
- School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
- Department of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, NY 11973, USA
| | - Changsong Xu
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR 72701, USA
- State Key Laboratory of Low-Dimensional Quantum Physics and Collaborative Innovation Center of Quantum Matter, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Shiqing Deng
- School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Myung-Geun Han
- Department of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, NY 11973, USA
| | - Shanyong Bao
- School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Jing Ma
- School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Cewen Nan
- School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Wenhui Duan
- State Key Laboratory of Low-Dimensional Quantum Physics and Collaborative Innovation Center of Quantum Matter, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Laurent Bellaiche
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR 72701, USA
| | - Yimei Zhu
- Department of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, NY 11973, USA
| | - Jing Zhu
- School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
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