Dual Wavelength (Ultraviolet and Green) Photodetectors Using Solution Processed Zinc Oxide Nanoparticles

Sn-Doped Zinc Oxide as an Electron Transporting Layer for Enhanced Performance in PbS Quantum Dot Solar Cells

Colloidal PbS quantum dot solar cells (QDSCs) have been primarily demonstrated in n-i-p structures by incorporating a solution-processed ZnO electron transporting layer (ETL). Nevertheless, the inherent energy barrier for the electron extraction at the ZnO/PbS junction along with the defective nature significantly diminishes the performance of the PbS QDSCs. In this study, by employing Sn-doped ZnO (ZTO) ETL, we have tuned the conduction band offset at the junction from spike-type to cliff-type so that the electron extraction barrier can be eliminated and the overall photovoltaic parameters can be enhanced (open-circuit voltage of 0.7 V, fill factor over 70%, and efficiency of 11.3%) as compared with the counterpart with the undoped ZnO ETL. The X-ray photoelectron spectroscopy (XPS) analysis revealed a mitigation of oxygen vacancies in the ZTO ETL of our PbS QDSCs. Our work signifies the importance of Sn doping into the conventional ZnO ETL for the superior electron extraction in PbS QDSCs.

CVD-Grown Monolayer MoS2 and GaN Thin Film Heterostructure for a Self-Powered and Bidirectional Photodetector with an Extended Active Spectrum

Photodetector technology has evolved significantly over the years with the emergence of new active materials. However, there remain trade-offs between spectral sensitivity, operating energy, and, more recently, an ability to harbor additional features such as persistent photoconductivity and bidirectional photocurrents for new emerging application areas such as switchable light imaging and filter-less color discrimination. Here, we demonstrate a self-powered bidirectional photodetector based on molybdenum disulfide/gallium nitride (MoS2/GaN) epitaxial heterostructure. This fabricated detector exhibits self-powered functionality and achieves detection in two discrete wavelength bands: ultraviolet and visible. Notably, it attains a peak responsivity of 631 mAW-1 at a bias of 0V. The device's response to illumination at these two wavelengths is governed by distinct mechanisms, activated under applied bias conditions, thereby inducing a reversal in the polarity of the photocurrent. This work underscores the feasibility of self-powered and bidirectional photocurrent detection but also opens new vistas for technological advancements for future optoelectronic, neuromorphic, and sensing applications.

Plasmons Enhancing Sub-Bandgap Photoconductivity in TiO2 Nanoparticles Film

The coupling between sub-bandgap defect states and surface plasmon resonances in Au nanoparticles and its effects on the photoconductivity performance of TiO2 are investigated in both the ultraviolet (UV) and visible spectrum. Incorporating a 2 nm gold nanoparticle layer in the photodetector device architecture creates additional trapping pathways, resulting in a faster current decay under UV illumination and a significant enhancement in the visible photocurrent of TiO2, with an 8-fold enhancement of the defects-related photocurrent. We show that hot electron injection (HEI) and plasmonic resonance energy transfer (PRET) jointly contribute to the observed photoconductivity enhancement. In addition to shedding light on the below-band-edge photoconductivity of TiO2, our work provides insight into new methods to probe and examine the surface defects of metal oxide semiconductors using plasmonic resonances.

Colloidal Approaches to Zinc Oxide Nanocrystals

Zinc oxide is an extensively studied semiconductor with a wide band gap in the near-UV. Its many interesting properties have found use in optics, electronics, catalysis, sensing, as well as biomedicine and microbiology. In the nanoscale regime the functional properties of ZnO can be precisely tuned by manipulating its size, shape, chemical composition (doping), and surface states. In this review, we focus on the colloidal synthesis of ZnO nanocrystals (NCs) and provide a critical analysis of the synthetic methods currently available for preparing ZnO colloids. First, we outline key thermodynamic considerations for the nucleation and growth of colloidal nanoparticles, including an analysis of different reaction methodologies and of the role of dopant ions on nanoparticle formation. We then comprehensively review and discuss the literature on ZnO NC systems, including reactions in polar solvents that traditionally occur at low temperatures upon addition of a base, and high temperature reactions in organic, nonpolar solvents. A specific section is dedicated to doped NCs, highlighting both synthetic aspects and structure-property relationships. The versatility of these methods to achieve morphological and compositional control in ZnO is explicated. We then showcase some of the key applications of ZnO NCs, both as suspended colloids and as deposited coatings on supporting substrates. Finally, a critical analysis of the current state of the art for ZnO colloidal NCs is presented along with existing challenges and future directions for the field.

Sensing of Oxygen Partial Pressure in Air with ZnO Nanoparticles

The demand for sensors in response to oxygen partial pressure in air is increasingly high in recent years and small-size sensors on a micrometer scale and even a nanometer scale are particularly desirable. In this paper, the sensing of oxygen partial pressure in air was realized by a solution-processed ZnO nanoparticle (NP). Thin-film ZnO NP was prepared by spin-coating and a highly sensitive sensor was then fabricated. The oxygen sensing performance was characterized in air and compared with that in nitrogen, which showed an increase in electrical conductance by more than 100 times as a result of decreasing oxygen partial pressure from 10³ mBar to 10⁻⁵ mBar. Moreover, higher sensitivity was achieved by increasing the annealing temperature and the effect of thermal annealing was also investigated. Furthermore, ZnO NP lines with 7 μm in width were successfully patterned with low cost by a mould-guided drying technique from ZnO NP dispersion, which makes ZnO NP extremely promising for miniaturized and integrated sensing applications.

Self-Powered Dual-Color UV-Green Photodetectors Based on SnO2 Millimeter Wire and Microwires/CsPbBr3 Particle Heterojunctions

Multiband detection has always been a challenge and has drawn much attention in the development of photodetectors (PDs). Herein, we present controllable synthesis of SnO₂ wires with different sizes via chemical vapor deposition and formed composites with CsPbBr₃ particles to realize dual spectral response. We constructed PDs based on a single SnO₂ millimeter wire decorated with CsPbBr₃ particles (SnO₂ MMW/CsPbBr₃), which showed a stepped spectrum, fast response speed, and self-powered function. Meanwhile, SnO₂ microwires/CsPbBr₃ composites (SnO₂ MWs/CsPbBr₃) were also utilized to fabricate PDs. It is noteworthy that detection occurred in two different wavelength bands (320 and 520 nm) with equivalent intensity at a bias of 0 V. The self-powered feature of this device comes from the built-in electric field at the interface of SnO₂/CsPbBr₃, and the dual-color response originates from asymmetric junction barriers between conduction bands of SnO₂ and CsPbBr₃. This work demonstrated promising self-powered PDs that are capable of multiband detection.

Surface-Engineered Nanostructure-Based Efficient Nonpolar GaN Ultraviolet Photodetectors

Surface-engineered nanostructured nonpolar (112̅0) gallium nitride (GaN)-based high-performance ultraviolet (UV) photodetectors (PDs) have been fabricated. The surface morphology of a nonpolar GaN film was modified from pyramidal shape to flat and trigonal nanorods displaying facets along different crystallographic planes. We report the ease of enhancing the photocurrent (5.5-fold) and responsivity (6-fold) of the PDs using a simple and convenient wet chemical-etching-induced surface engineering. The fabricated metal-semiconductor-metal structure-based surface-engineered UV PD exhibited a significant increment in detectivity, that is, from 0.43 to 2.83 (×10⁸) Jones, and showed a very low noise-equivalent power (∼10^-10 W Hz^-1/2). The reliability of the nanostructured PD was ensured via fast switching with a response and decay time of 332 and 995 ms, which were more than five times faster with respect to the unetched pyramidal structure-based UV PD. The improvement in device performance was attributed to increased light absorption, efficient transport of photogenerated carriers, and enhancement in conduction cross section via elimination of recombination/trap centers related to defect states. Thus, the proposed method could be a promising approach to enhance the performance of GaN-based PD technology.