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Fang L, Chen C, Lu X, Ren W. Effects of pressure and temperature on topological electronic materials X 2Y 3 (X = As, Sb, Bi; Y = Se, Te) using first-principles. Phys Chem Chem Phys 2023; 25:20969-20978. [PMID: 37497587 DOI: 10.1039/d3cp01951a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/28/2023]
Abstract
We systematically study the thermal and topological properties of X2Y3 (X = As, Sb, Bi; Y = Se, Te) and the effects of pressure and temperature on their electronic properties using first-principles. We find that the external pressure-induced electronic topological transition occurs at about 5 GPa for Bi2Se3, and the type of band gap tends to become indirect with the increase of pressure. We also investigate the lattice expansion with temperature in quasi-harmonic approximation and further explore the effect of temperature on the volume, band gap, and volumetric thermal expansion coefficient of the studied selenides and tellurides. Finally, we calculate the evolution of the Wannier charge center of X2Y3 to determine their topological invariants, and theoretically suggest that Bi2Se3 changes from a topological to an ordinary insulator when the pressure decreases to -8 GPa; As2Se3 is found to be an ordinary insulator, while all other four compounds are always strong topological insulators at any pressure or temperature.
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Affiliation(s)
- Le Fang
- State Key Laboratory of Advanced Special Steel, School of Materials Science and Engineering, ICQMS and Physics Department, Shanghai University, Shanghai 200444, China.
- Institut für Physik and IRIS Adlershof, Humboldt-Universität zu Berlin, Berlin 12489, Germany
| | - Chen Chen
- State Key Laboratory of Advanced Special Steel, School of Materials Science and Engineering, ICQMS and Physics Department, Shanghai University, Shanghai 200444, China.
- NOMAD Laboratory, Fritz-Haber-Institut der Max-Planck-Gesellschaft, Berlin 14195, Germany
| | - Xionggang Lu
- State Key Laboratory of Advanced Special Steel, School of Materials Science and Engineering, ICQMS and Physics Department, Shanghai University, Shanghai 200444, China.
- School of Materials Science, Shanghai Dianji University, Shanghai 200240, China
| | - Wei Ren
- State Key Laboratory of Advanced Special Steel, School of Materials Science and Engineering, ICQMS and Physics Department, Shanghai University, Shanghai 200444, China.
- Shanghai Key Laboratory of High Temperature Superconductors, Shanghai University, Shanghai 200444, China
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Lu C, Luo M, Dong W, Ge Y, Han T, Liu Y, Xue X, Ma N, Huang Y, Zhou Y, Xu X. Bi 2 Te 3 /Bi 2 Se 3 /Bi 2 S 3 Cascade Heterostructure for Fast-Response and High-Photoresponsivity Photodetector and High-Efficiency Water Splitting with a Small Bias Voltage. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2205460. [PMID: 36574467 PMCID: PMC9951346 DOI: 10.1002/advs.202205460] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/21/2022] [Revised: 12/08/2022] [Indexed: 05/14/2023]
Abstract
Large-scale multi-heterostructure and optimal band alignment are significantly challenging but vital for photoelectrochemical (PEC)-type photodetector and water splitting. Herein, the centimeter-scale bismuth chalcogenides-based cascade heterostructure is successfully synthesized by a sequential vapor phase deposition method. The multi-staggered band alignment of Bi2 Te3 /Bi2 Se3 /Bi2 S3 is optimized and verified by X-ray photoelectron spectroscopy. The PEC photodetectors based on these cascade heterostructures demonstrate the highest photoresponsivity (103 mA W-1 at -0.1 V and 3.5 mAW-1 at 0 V under 475 nm light excitation) among the previous reports based on two-dimensional materials and related heterostructures. Furthermore, the photodetectors display a fast response (≈8 ms), a high detectivity (8.96 × 109 Jones), a high external quantum efficiency (26.17%), and a high incident photon-to-current efficiency (27.04%) at 475 nm. Due to the rapid charge transport and efficient light absorption, the Bi2 Te3 /Bi2 Se3 /Bi2 S3 cascade heterostructure demonstrates a highly efficient hydrogen production rate (≈0.416 mmol cm-2 h-1 and ≈14.320 µmol cm-2 h-1 with or without sacrificial agent, respectively), which is far superior to those of pure bismuth chalcogenides and its type-II heterostructures. The large-scale cascade heterostructure offers an innovative method to improve the performance of optoelectronic devices in the future.
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Affiliation(s)
- Chunhui Lu
- Shaanxi Joint Lab of GrapheneState Key Laboratory of Photon‐Technology in Western China EnergyInternational Collaborative Center on Photoelectric Technology and Nano Functional MaterialsInstitute of Photonics & Photon‐TechnologySchool of PhysicsNorthwest UniversityXi'an710069China
| | - Mingwei Luo
- Shaanxi Joint Lab of GrapheneState Key Laboratory of Photon‐Technology in Western China EnergyInternational Collaborative Center on Photoelectric Technology and Nano Functional MaterialsInstitute of Photonics & Photon‐TechnologySchool of PhysicsNorthwest UniversityXi'an710069China
| | - Wen Dong
- Shaanxi Joint Lab of GrapheneState Key Laboratory of Photon‐Technology in Western China EnergyInternational Collaborative Center on Photoelectric Technology and Nano Functional MaterialsInstitute of Photonics & Photon‐TechnologySchool of PhysicsNorthwest UniversityXi'an710069China
| | - Yanqing Ge
- Shaanxi Joint Lab of GrapheneState Key Laboratory of Photon‐Technology in Western China EnergyInternational Collaborative Center on Photoelectric Technology and Nano Functional MaterialsInstitute of Photonics & Photon‐TechnologySchool of PhysicsNorthwest UniversityXi'an710069China
| | - Taotao Han
- Shaanxi Joint Lab of GrapheneState Key Laboratory of Photon‐Technology in Western China EnergyInternational Collaborative Center on Photoelectric Technology and Nano Functional MaterialsInstitute of Photonics & Photon‐TechnologySchool of PhysicsNorthwest UniversityXi'an710069China
| | - Yuqi Liu
- Shaanxi Joint Lab of GrapheneState Key Laboratory of Photon‐Technology in Western China EnergyInternational Collaborative Center on Photoelectric Technology and Nano Functional MaterialsInstitute of Photonics & Photon‐TechnologySchool of PhysicsNorthwest UniversityXi'an710069China
| | - Xinyi Xue
- Shaanxi Joint Lab of GrapheneState Key Laboratory of Photon‐Technology in Western China EnergyInternational Collaborative Center on Photoelectric Technology and Nano Functional MaterialsInstitute of Photonics & Photon‐TechnologySchool of PhysicsNorthwest UniversityXi'an710069China
| | - Nan Ma
- Shaanxi Joint Lab of GrapheneState Key Laboratory of Photon‐Technology in Western China EnergyInternational Collaborative Center on Photoelectric Technology and Nano Functional MaterialsInstitute of Photonics & Photon‐TechnologySchool of PhysicsNorthwest UniversityXi'an710069China
| | - Yuanyuan Huang
- Shaanxi Joint Lab of GrapheneState Key Laboratory of Photon‐Technology in Western China EnergyInternational Collaborative Center on Photoelectric Technology and Nano Functional MaterialsInstitute of Photonics & Photon‐TechnologySchool of PhysicsNorthwest UniversityXi'an710069China
| | - Yixuan Zhou
- Shaanxi Joint Lab of GrapheneState Key Laboratory of Photon‐Technology in Western China EnergyInternational Collaborative Center on Photoelectric Technology and Nano Functional MaterialsInstitute of Photonics & Photon‐TechnologySchool of PhysicsNorthwest UniversityXi'an710069China
| | - Xinlong Xu
- Shaanxi Joint Lab of GrapheneState Key Laboratory of Photon‐Technology in Western China EnergyInternational Collaborative Center on Photoelectric Technology and Nano Functional MaterialsInstitute of Photonics & Photon‐TechnologySchool of PhysicsNorthwest UniversityXi'an710069China
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Yang Y, Liu W, Huang T, Qiu M, Zhang R, Yang W, He J, Chen X, Dai N. Low Deposition Temperature Amorphous ALD-Ga 2O 3 Thin Films and Decoration with MoS 2 Multilayers toward Flexible Solar-Blind Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2021; 13:41802-41809. [PMID: 34435500 DOI: 10.1021/acsami.1c11692] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Flexible sensors and photodetectors are among the robust and powerful strategies for advanced and smart devices. Meanwhile, wide band-gap metal oxides are competitive candidates for fabricating flexible solar-blind photodetectors (SBPDs) but still challenging in both fundamental and practical fields. Here, we demonstrate the amorphous ALD-Ga2O3 (am-ALD-Ga2O3) thin films realized at a moderate temperature toward flexible SBPDs. The bandgap (Eg) of 4.88-5.04 eV depends on and changes with the thickness of am-ALD-Ga2O3 thin films during atomic layer deposition (ALD) processes. The SBPDs are fabricated with the as-grown am-ALD-Ga2O3 thin films on desired substrates and exhibit an Ilight/Idark ratio of up to ∼4.5 × 104 and dark current down to ∼10-13 A. Subsequently, decorating the ALD-Ga2O3 channels with MoS2 multilayers helps improve the photocurrent of SBPDs that worked in the deep ultraviolet region. We expect that our work will offer more opportunities to understand and exploit am-ALD-Ga2O3 thin films toward advanced flexible SBPDs and functional sensors.
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Affiliation(s)
- Yan Yang
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Weiming Liu
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China
| | - Tiantian Huang
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Mengxia Qiu
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Rui Zhang
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Wanli Yang
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Junbo He
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China
| | - Xin Chen
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Ning Dai
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
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Shi YJ, Zhang RJ, Chen X, Wang L, Chen L, Huang QH, Li DH, Zheng YX, Wang SY, Dai N, Chen LY. Evolution of optical properties and electronic structures: band gaps and critical points in Mg xZn 1-xO (0 ≤ x ≤ 0.2) thin films. Phys Chem Chem Phys 2018; 20:25467-25475. [PMID: 30272075 DOI: 10.1039/c8cp04942d] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/27/2023]
Abstract
MgxZn1-xO (ZMO) thin films with tunable Mg content were deposited by atomic layer deposition (ALD) on silicon substrates at 190 °C. The elemental and structural properties were acquired by X-ray photoelectron spectroscopy, transmission electron microscopy, atomic force microscopy and X-ray diffraction. Spectroscopic ellipsometry measurements were performed to reveal the evolution of the dielectric functions and critical points in the ZMO thin films by point-by-point fit in the photon energy range of 1.2-6.0 eV. The dependence of the dielectric functions on doping content is clearly demonstrated and physically explained. The critical point energies and the types of interband optical transitions were extracted from standard lineshape analysis of the second derivatives of the dielectric functions. The critical point features were discussed in terms of band structure modification and structural homogeneity arisen by introducing the Mg dopant into the films. Controlling these transitions by changing the doping content will be of practical significance in emerging ZMO-based thin-film photonic and optoelectronic devices.
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Affiliation(s)
- Yue-Jie Shi
- Key Laboratory of Micro and Nano Photonic Structures, Ministry of Education, Shanghai Engineering Research Center of Ultra-Precision Optical Manufacturing, Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China.
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Gorle G, Bathinapatla A, Chen YZ, Ling YC. Near infrared light activatable PEI-wrapped bismuth selenide nanocomposites for photothermal/photodynamic therapy induced bacterial inactivation and dye degradation. RSC Adv 2018; 8:19827-19834. [PMID: 35540975 PMCID: PMC9080770 DOI: 10.1039/c8ra02183j] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/12/2018] [Accepted: 05/01/2018] [Indexed: 11/21/2022] Open
Abstract
Inactivation of bacteria and degradation of organic pollutants by engineered nanomaterials (NMs) are very effective approaches in producing safe and clean drinking water.
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Affiliation(s)
- Govinda Gorle
- Department of Chemistry
- National Tsing Hua University
- Hsinchu 30013
- Taiwan
| | | | - Yi-Zhan Chen
- Department of Chemistry
- National Tsing Hua University
- Hsinchu 30013
- Taiwan
| | - Yong-Chien Ling
- Department of Chemistry
- National Tsing Hua University
- Hsinchu 30013
- Taiwan
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