Controlling Water Intercalation Is Key to a Direct Graphene Transfer

Interfacial Phenomena Governing Performance of Graphene Electrodes in Aqueous Electrolyte

There is evidence of the presence of intercalated water between graphene and the substrate in electronic devices. However, a proper understanding of the impact of this phenomenon, which causes important limitations for the optimization of graphene-based devices operating in aqueous electrolytes, is missing. We used graphene-based electrodes on insulating and conducting substrates to evaluate the impact of intercalated water by combining experimental techniques with numerical simulations. Results show that the capacitance of the conductive substrate/graphene electrodes is significantly higher than that of the insulating substrate/graphene ones. Meanwhile, Raman spectroscopy demonstrates that graphene charge modulation with the applied potential is independent of the substrate conductivity. We found that this intriguing behavior is influenced by the water intercalation phenomena and governed by the substrate conductive nature. This work contributes to the understanding of the electric response of graphene-based devices in an aqueous environment and of the methods to measure and model it.

Achieving High Substitutional Incorporation in Mn-Doped Graphene

Despite its broad potential applications, substitution of carbon by transition metal atoms in graphene has so far been explored only to a limited extent. We report the realization of substitutional Mn doping of graphene to a record high atomic concentration of 0.5%, which was achieved using ultralow-energy ion implantation. By correlating the experimental data with the results of ab initio Born-Oppenheimer molecular dynamics calculations, we infer that direct substitution is the dominant mechanism of impurity incorporation. Thermal annealing in ultrahigh vacuum provides efficient removal of surface contaminants and additional implantation-induced disorder, resulting in Mn-doped graphene that, aside from the substitutional Mn impurities, is essentially as clean and defect-free as the as-grown layer. We further show that the Dirac character of graphene is preserved upon substitutional Mn doping, even in this high concentration regime, making this system ideal for studying the interaction between Dirac conduction electrons and localized magnetic moments. More generally, these results show that ultralow energy ion implantation can be used for controlled functionalization of graphene with substitutional transition-metal atoms, of relevance for a wide range of applications, from magnetism and spintronics to single-atom catalysis.

The Road for 2D Semiconductors in the Silicon Age

Continued reduction in transistor size can improve the performance of silicon integrated circuits (ICs). However, as Moore's law approaches physical limits, high-performance growth in silicon ICs becomes unsustainable, due to challenges of scaling, energy efficiency, and memory limitations. The ultrathin layers, diverse band structures, unique electronic properties, and silicon-compatible processes of 2D materials create the potential to consistently drive advanced performance in ICs. Here, the potential of fusing 2D materials with silicon ICs to minimize the challenges in silicon ICs, and to create technologies beyond the von Neumann architecture, is presented, and the killer applications for 2D materials in logic and memory devices to ease scaling, energy efficiency bottlenecks, and memory dilemmas encountered in silicon ICs are discussed. The fusion of 2D materials allows the creation of all-in-one perception, memory, and computation technologies beyond the von Neumann architecture to enhance system efficiency and remove computing power bottlenecks. Progress on the 2D ICs demonstration is summarized, as well as the technical hurdles it faces in terms of wafer-scale heterostructure growth, transfer, and compatible integration with silicon ICs. Finally, the promising pathways and obstacles to the technological advances in ICs due to the integration of 2D materials with silicon are presented.

Recent Progress in the Transfer of Graphene Films and Nanostructures

The one-atom-thick graphene has excellent electronic, optical, thermal, and mechanical properties. Currently, chemical vapor deposition (CVD) graphene has received a great deal of attention because it provides access to large-area and uniform films with high-quality. This allows the fabrication of graphene based-electronics, sensors, photonics, and optoelectronics for practical applications. Zero bandgap, however, limits the application of a graphene film as electronic transistor. The most commonly used bottom-up approaches have achieved efficient tuning of the electronic bandgap by customizing well-defined graphene nanostructures. The postgrowth transfer of graphene films/nanostructures to a certain substrate is crucial in utilizing graphene in applicable devices. In this review, the basic growth mechanism of CVD graphene is first introduced. Then, recent advances in various transfer methods of as-grown graphene to target substrates are presented. The fabrication and transfer methods of graphene nanostructures are also provided, and then the transfer-related applications are summarized. At last, the challenging issues and the potential transfer-free approaches are discussed.

Graphene Transfer: A Physical Perspective

Graphene, synthesized either epitaxially on silicon carbide or via chemical vapor deposition (CVD) on a transition metal, is gathering an increasing amount of interest from industrial and commercial ventures due to its remarkable electronic, mechanical, and thermal properties, as well as the ease with which it can be incorporated into devices. To exploit these superlative properties, it is generally necessary to transfer graphene from its conductive growth substrate to a more appropriate target substrate. In this review, we analyze the literature describing graphene transfer methods developed over the last decade. We present a simple physical model of the adhesion of graphene to its substrate, and we use this model to organize the various graphene transfer techniques by how they tackle the problem of modulating the adhesion energy between graphene and its substrate. We consider the challenges inherent in both delamination of graphene from its original substrate as well as relamination of graphene onto its target substrate, and we show how our simple model can rationalize various transfer strategies to mitigate these challenges and overcome the introduction of impurities and defects into the graphene. Our analysis of graphene transfer strategies concludes with a suggestion of possible future directions for the field.

Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene

One of the limiting factors of graphene integration into electronic, photonic, or sensing devices is the unavailability of large-scale graphene directly grown on the isolators. Therefore, it is necessary to transfer graphene from the donor growth wafers onto the isolating target wafers. In the present research, graphene was transferred from the chemical vapor deposited 200 mm Germanium/Silicon (Ge/Si) wafers onto isolating (SiO₂/Si and Si₃N₄/Si) wafers by electrochemical delamination procedure, employing poly(methylmethacrylate) as an intermediate support layer. In order to influence the adhesion properties of graphene, the wettability properties of the target substrates were investigated in this study. To increase the adhesion of the graphene on the isolating surfaces, they were pre-treated with oxygen plasma prior the transfer process of graphene. The wetting contact angle measurements revealed the increase of the hydrophilicity after surface interaction with oxygen plasma, leading to improved adhesion of the graphene on 200 mm target wafers and possible proof-of-concept development of graphene-based devices in standard Si technologies.

Silicon/2D-material photodetectors: from near-infrared to mid-infrared

Two-dimensional materials (2DMs) have been used widely in constructing photodetectors (PDs) because of their advantages in flexible integration and ultrabroad operation wavelength range. Specifically, 2DM PDs on silicon have attracted much attention because silicon microelectronics and silicon photonics have been developed successfully for many applications. 2DM PDs meet the imperious demand of silicon photonics on low-cost, high-performance, and broadband photodetection. In this work, a review is given for the recent progresses of Si/2DM PDs working in the wavelength band from near-infrared to mid-infrared, which are attractive for many applications. The operation mechanisms and the device configurations are summarized in the first part. The waveguide-integrated PDs and the surface-illuminated PDs are then reviewed in details, respectively. The discussion and outlook for 2DM PDs on silicon are finally given.

Impact of Polymer Residue Level on the In-Plane Thermal Conductivity of Suspended Large-Area Graphene Sheets

The presence of polymer transfer residues on graphene surfaces is a major bottleneck to overcome for the commercial and industrial viability of devices incorporating graphene layers. In particular, how clean the surface must be to recover high (>2500 W/mK) thermal conductivity and maximize the heat spreading capability of graphene for thermal management applications remains unclear. Here, we present the first systematic study of the impact of different levels of polymer residues on the in-plane thermal conductivity (κ_r) of single-layer graphene (SLG) fabricated by chemical vapor deposition (CVD). Control over the quantity of surface residue was achieved by varying the length of time each sample was rinsed in toluene to remove the poly(methyl methacrylate) (PMMA) support layer. The level of residue contamination was assessed using atomic force microscopy (AFM) and optical characterization. The thermal conductivity of the suspended SLG was measured using an optothermal Raman technique. We observed that the presence of polymer surface residue has a significant impact on the thermal properties of SLG, with the most heavily contaminated sample exhibiting a κ_r as low as (905 +155/-100) W/mK. Even without complete eradication of surface residues, a thermal conductivity as high as (3100 +1400/-900) W/mK was recovered, where the separation between adjacent clusters was sufficiently large (>700 nm). The proportion of the SLG surface covered by residues and the mean separation distance between clusters were found to be key factors in determining the level of κ_r suppression. This work has important implications for future large-scale graphene fabrication and transfer, particularly where graphene is to be used as a heat spreading layer in devices. The possibility of new opportunities for manipulation of the thermal properties of SLG via PMMA nanopatterning is also raised.

Super-Slippery Degraded Black Phosphorus/Silicon Dioxide Interface

The interfaces between two-dimensional (2D) materials and the silicon dioxide (SiO₂)/silicon (Si) substrate, generally considered as a solid-solid mechanical contact, have been especially emphasized for the structure design and the property optimization in microsystems and nanoengineering. The basic understanding of the interfacial structure and dynamics for 2D material-based systems still remains one of the inevitable challenges ahead. Here, an interfacial mobile water layer is indicated to insert into the interface of the degraded black phosphorus (BP) flake and the SiO₂/Si substrate owing to the induced hydroxyl groups during the ambient degradation. A super-slippery degraded BP/SiO₂ interface was observed with the interfacial shear stress (ISS) experimentally evaluated as low as 0.029 ± 0.004 MPa, being comparable to the ISS values of incommensurate rigid crystalline contacts. In-depth investigation of the interfacial structure through nuclear magnetic resonance spectroscopy and in situ X-ray photoelectron spectroscopy depth profiling revealed that the interfacial liquid water was responsible for the super-slippery BP/SiO₂ interface with extremely low shear stress. This finding clarifies the strong interactions between degraded BP and water molecules, which supports the potential wider applications of the few-layer BP nanomaterial in biological lubrication.

Graphene-Subgrain-Defined Oxidation of Copper

The correlation between the crystal structure of chemical vapor deposition (CVD)-grown graphene and the crystal structure of the Cu growth substrate and their mutual effect on the oxidation of the underlying Cu are systematically explored. We report that natural oxygen or water intercalation along the graphene-Cu interface results in an orientation-dependent oxidation rate of the Cu surface, particularly noticeable for bicrystal graphene domains on the same copper grain, suggesting that the relative crystal orientation of subgrains determines the degree of Cu oxidation. Atomistic force field calculations support these observations, showing that graphene domains have preferential alignment with the Cu(111) with a smaller average height above the global Cu surface as compared to intermediate orientations, and that this is the origin of the heterogeneous oxidation rate of Cu. This work demonstrates that the natural oxidation resistance of Cu coated by graphene is highly dependent on the crystal orientation and lattice alignment of Cu and graphene, which is key information for engineering the interface configuration of the graphene-Cu system for specific functionalities in mechanical, anticorrosion, and electrical applications of CVD-grown graphene.

Graphene and two-dimensional materials for silicon technology

The development of silicon semiconductor technology has produced breakthroughs in electronics-from the microprocessor in the late 1960s to early 1970s, to automation, computers and smartphones-by downscaling the physical size of devices and wires to the nanometre regime. Now, graphene and related two-dimensional (2D) materials offer prospects of unprecedented advances in device performance at the atomic limit, and a synergistic combination of 2D materials with silicon chips promises a heterogeneous platform to deliver massively enhanced potential based on silicon technology. Integration is achieved via three-dimensional monolithic construction of multifunctional high-rise 2D silicon chips, enabling enhanced performance by exploiting the vertical direction and the functional diversification of the silicon platform for applications in opto-electronics and sensing. Here we review the opportunities, progress and challenges of integrating atomically thin materials with silicon-based nanosystems, and also consider the prospects for computational and non-computational applications.

Strongly Hole-Doped and Highly Decoupled Graphene on Platinum by Water Intercalation

Scanning tunneling microscopy and spectroscopy experiments under ultrahigh vacuum and low-temperature conditions have been performed on water-intercalated graphene on Pt(111). We find that the confined water layer, with a thickness around 0.35 nm, induces a strong hole doping in graphene, i.e., the Dirac point locates at round 0.64 eV above the Fermi level. This can be explained by the presence of a single "puckered bilayer" of ice-Ih, which has not been experimentally found on bare Pt(111), being confined in between graphene and Pt(111) surface. Moreover, the water intercalation makes graphene highly decoupled from the substrate, allowing us to reveal the intrinsic graphene phonons and double Rydberg series of even and odd symmetry image-potential states. Our work not only demonstrates that the electronic properties of graphene can be tuned by the confined water layer between graphene and the substrate, but also provides a generally applicable method to study the intrinsic properties of graphene as well as of other supported two-dimensional materials.

Exfoliation of Two-Dimensional Materials: The Role of Entropy

Liquid-phase exfoliation (LPE) is the best-known method for the synthesis of two-dimensional (2D) nanosheets. Compared to enthalpy, entropy is hardly considered to be a factor in choosing energy-efficient solvents and has not even been verified to be negligible. In this Letter, we explore the entropy contribution in LPE by performing molecular dynamics (MD) simulation of the structural flexibility effect in graphene, hexagonal boron nitride (hBN), and molybdenum disulfide (MoS₂). Our results show that surface vibration favors the exfoliation of graphene and hBN and destabilizes the reaggregation of nanosheets in water at 300 K, whereas the opposite is found for MoS₂. The entropy change is found to be 41%, 48%, and 4% of the enthalpy gain for graphene, hBN, and MoS₂ in LPE, respectively, and 64%, 32%, and 56% in reaggregation, which amounts to a step advancement for solvent screening in LPE of 2D materials.

A Peeling Approach for Integrated Manufacturing of Large Monolayer h-BN Crystals

Hexagonal boron nitride (h-BN) is the only known material aside from graphite with a structure composed of simple, stable, noncorrugated atomically thin layers. While historically used as a lubricant in powder form, h-BN layers have become particularly attractive as an ultimately thin insulator, barrier, or encapsulant. Practically all emerging electronic and photonic device concepts currently rely on h-BN exfoliated from small bulk crystallites, which limits device dimensions and process scalability. We here focus on a systematic understanding of Pt-catalyzed h-BN crystal formation, in order to address this integration challenge for monolayer h-BN via an integrated chemical vapor deposition (CVD) process that enables h-BN crystal domain sizes exceeding 0.5 mm and a merged, continuous layer in a growth time of less than 45 min. The process makes use of commercial, reusable Pt foils and allows a delamination process for easy and clean h-BN layer transfer. We demonstrate sequential pick-up for the assembly of graphene/h-BN heterostructures with atomic layer precision, while minimizing interfacial contamination. The approach can be readily combined with other layered materials and enables the integration of CVD h-BN into high-quality, reliable 2D material device layer stacks.

A systematic study of various 2D materials in the light of defect formation and oxidation

Thermodynamic insight into defect formation, oxidation and healing in various 2D materials with relevant impact on electronic properties.

Graphene delamination using 'electrochemical methods': an ion intercalation effect

The mechanism of graphene delamination from a Pt catalyst growth surface with electrochemical methods is studied. After a water intercalation step, an electrochemical graphene delamination process is done with a variety of different electrolytes. It is shown that (hydrogen or oxygen) bubble formation is not the main driving force to decouple graphene from its catalyst growth substrate. Ion intercalation is identified as the primary component for a fast graphene delamination process from its catalytic growth substrate. When the Pt/graphene sample is negatively charged, cations will intercalate, assuming they do not reduce within the electrochemical window of the solvent. This cation intercalation does result in graphene delamination. In the same way, anions intercalate in positively charged Pt/graphene samples when they do not react within the electrochemical window of the solvent. Furthermore, it is shown that applying a potential is sufficient (current is not needed) to induce ion intercalation and, as a result, graphene delamination. These findings open the door to avoid Na⁺ or K⁺ contamination introduced during currently described electrochemical graphene delamination. Alternative electrolytes (i.e. ammonium hydroxide and tetraethylammonium hydroxide) are proposed, due to the absence of alkali contaminants and rapid cation intercalation to delaminate graphene.