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Kim J, Jo C, Kim MG, Park GS, Marks TJ, Facchetti A, Park SK. Vertically Stacked Full Color Quantum Dots Phototransistor Arrays for High-Resolution and Enhanced Color-Selective Imaging. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2106215. [PMID: 34632653 DOI: 10.1002/adma.202106215] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/09/2021] [Revised: 09/24/2021] [Indexed: 06/13/2023]
Abstract
Color-selective multifunctional and multiplexed photodetectors have attracted considerable interest with the increasing demand for color filter-free optoelectronics which can simultaneously process multispectral signal via minimized system complexity. The low efficiency of color-filter technology and conventional laterally pixelated photodetector array structures often limit opportunities for widespread realization of high-density photodetectors. Here, low-temperature solution-processed vertically stacked full color quantum dot (QD) phototransistor arrays are developed on plastic substrates for high-resolution color-selective photosensor applications. Particularly, the three different-sized/color (RGB) QDs are vertically stacked and pixelated via direct photopatterning using a unique chelating chalcometallate ligand functioning both as solubilizing component and, after photoexposure, a semiconducting cement creating robust, insoluble, and charge-efficient QD layers localized in the a-IGZO transistor region, resulting in efficient wavelength-dependent photo-induced charge transfer. Thus, high-resolution vertically stacked full color QD photodetector arrays are successfully implemented with the density of 5500 devices cm-2 on ultrathin flexible polymeric substrates with highly photosensitive characteristics such as photoresponsivity (1.1 × 104 AW-1 ) and photodetectivity (1.1 × 1018 Jones) as well as wide dynamic ranges (>150 dB).
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Affiliation(s)
- Jaehyun Kim
- Department of Chemistry and Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
| | - Chanho Jo
- Displays and Devices Research Lab. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, Republic of Korea
| | - Myung-Gil Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Gyeong-Su Park
- Department of Material Science and Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Tobin J Marks
- Department of Chemistry and Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
| | - Antonio Facchetti
- Department of Chemistry and Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
- Flexterra Corporation, 8025 Lamon Avenue, Skokie, IL, 60077, USA
| | - Sung Kyu Park
- Displays and Devices Research Lab. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, Republic of Korea
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Wang W, Zhang M, Pan Z, Biesold GM, Liang S, Rao H, Lin Z, Zhong X. Colloidal Inorganic Ligand-Capped Nanocrystals: Fundamentals, Status, and Insights into Advanced Functional Nanodevices. Chem Rev 2021; 122:4091-4162. [PMID: 34968050 DOI: 10.1021/acs.chemrev.1c00478] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Colloidal nanocrystals (NCs) are intriguing building blocks for assembling various functional thin films and devices. The electronic, optoelectronic, and thermoelectric applications of solution-processed, inorganic ligand (IL)-capped colloidal NCs are especially promising as the performance of related devices can substantially outperform their organic ligand-capped counterparts. This in turn highlights the significance of preparing IL-capped NC dispersions. The replacement of initial bulky and insulating ligands capped on NCs with short and conductive inorganic ones is a critical step in solution-phase ligand exchange for preparing IL-capped NCs. Solution-phase ligand exchange is extremely appealing due to the highly concentrated NC inks with completed ligand exchange and homogeneous ligand coverage on the NC surface. In this review, the state-of-the-art of IL-capped NCs derived from solution-phase inorganic ligand exchange (SPILE) reactions are comprehensively reviewed. First, a general overview of the development and recent advancements of the synthesis of IL-capped colloidal NCs, mechanisms of SPILE, elementary reaction principles, surface chemistry, and advanced characterizations is provided. Second, a series of important factors in the SPILE process are offered, followed by an illustration of how properties of NC dispersions evolve after ILE. Third, surface modifications of perovskite NCs with use of inorganic reagents are overviewed. They are necessary because perovskite NCs cannot withstand polar solvents or undergo SPILE due to their soft ionic nature. Fourth, an overview of the research progresses in utilizing IL-capped NCs for a wide range of applications is presented, including NC synthesis, NC solid and film fabrication techniques, field effect transistors, photodetectors, photovoltaic devices, thermoelectric, and photoelectrocatalytic materials. Finally, the review concludes by outlining the remaining challenges in this field and proposing promising directions to further promote the development of IL-capped NCs in practical application in the future.
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Affiliation(s)
- Wenran Wang
- Key Laboratory for Biobased Materials and Energy of Ministry of Education, College of Materials and Energy, South China Agricultural University, 483 Wushan Road, Guangzhou 510642, China.,School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.,Guangdong Laboratory for Lingnan Modern Agriculture, Guangzhou 510642, China
| | - Meng Zhang
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Zhenxiao Pan
- Key Laboratory for Biobased Materials and Energy of Ministry of Education, College of Materials and Energy, South China Agricultural University, 483 Wushan Road, Guangzhou 510642, China.,Guangdong Laboratory for Lingnan Modern Agriculture, Guangzhou 510642, China
| | - Gill M Biesold
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Shuang Liang
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Huashang Rao
- Key Laboratory for Biobased Materials and Energy of Ministry of Education, College of Materials and Energy, South China Agricultural University, 483 Wushan Road, Guangzhou 510642, China.,Guangdong Laboratory for Lingnan Modern Agriculture, Guangzhou 510642, China
| | - Zhiqun Lin
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Xinhua Zhong
- Key Laboratory for Biobased Materials and Energy of Ministry of Education, College of Materials and Energy, South China Agricultural University, 483 Wushan Road, Guangzhou 510642, China.,Guangdong Laboratory for Lingnan Modern Agriculture, Guangzhou 510642, China
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3
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Study of Construction and Performance on Photoelectric Devices of Cs-Pb-Br Perovskite Quantum Dot. MATERIALS 2021; 14:ma14216716. [PMID: 34772246 PMCID: PMC8587011 DOI: 10.3390/ma14216716] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/29/2021] [Revised: 10/19/2021] [Accepted: 11/04/2021] [Indexed: 01/08/2023]
Abstract
White LEDs were encapsulated using Cs4PbBr6 quantum dots and Gd2O3:Eu red phosphor as lamp powder. Under the excitation of a GaN chip, the color coordinates of the W-LED were (0.33, 0.34), and the color temperature was 5752 K, which is close to the color coordinate and color temperature range of standard sunlight. The electric current stability was excellent with an increase in the electric current, voltage, and luminescence intensity of the quantum dots and phosphors by more than 10 times. However, the stability of the quantum dots was slightly insufficient over long working periods. The photocatalytic devices were constructed using TiO2, CsPbBr3, and NiO as an electron transport layer, light absorption layer, and catalyst, respectively. The Cs–Pb–Br-based perovskite quantum dot photocatalytic devices were constructed using a two-step spin coating method, one-step spin coating method, and full PLD technology. In order to improve the water stability of the device, a hydrophobic carbon paste and carbon film were selected as the hole transport layer. The TiO2 layer and perovskite layer with different thicknesses and film forming qualities were obtained by changing the spin coating speed. The influence of the spin coating speed on the device’s performance was explored through SEM and a J–V curve to find the best spin coating process. The device constructed by the two-step spin coating method had a higher current density but no obvious increase in the current density under light, while the other two methods could obtain a more obvious light response, but the current density was very low.
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Nugraha MI, Yarali E, Firdaus Y, Lin Y, El-Labban A, Gedda M, Lidorikis E, Yengel E, Faber H, Anthopoulos TD. Rapid Photonic Processing of High-Electron-Mobility PbS Colloidal Quantum Dot Transistors. ACS APPLIED MATERIALS & INTERFACES 2020; 12:31591-31600. [PMID: 32564590 PMCID: PMC7467567 DOI: 10.1021/acsami.0c06306] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/06/2020] [Accepted: 06/22/2020] [Indexed: 05/24/2023]
Abstract
Recent advances in solution-processable semiconducting colloidal quantum dots (CQDs) have enabled their use in a range of (opto)electronic devices. In most of these studies, device fabrication relied almost exclusively on thermal annealing to remove organic residues and enhance inter-CQD electronic coupling. Despite its widespread use, however, thermal annealing is a lengthy process, while its effectiveness to eliminate organic residues remains limited. Here, we exploit the use of xenon flash lamp sintering to post-treat solution-deposited layers of lead sulfide (PbS) CQDs and their application in n-channel thin-film transistors (TFTs). The process is simple, fast, and highly scalable and allows for efficient removal of organic residues while preserving both quantum confinement and high channel current modulation. Bottom-gate, top-contact PbS CQD TFTs incorporating SiO2 as the gate dielectric exhibit a maximum electron mobility of 0.2 cm2 V-1 s-1, a value higher than that of control transistors (≈10-2 cm2 V-1 s-1) processed via thermal annealing for 30 min at 120 °C. Replacing SiO2 with a polymeric dielectric improves the transistor's channel interface, leading to a significant increase in electron mobility to 3.7 cm2 V-1 s-1. The present work highlights the potential of flash lamp annealing as a promising method for the rapid manufacture of PbS CQD-based (opto)electronic devices and circuits.
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Affiliation(s)
- Mohamad I. Nugraha
- Physical Sciences
and Engineering Division (PSE), KAUST Solar Center (KSC), King Abdullah University of Science and Technology
(KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Emre Yarali
- Physical Sciences
and Engineering Division (PSE), KAUST Solar Center (KSC), King Abdullah University of Science and Technology
(KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Yuliar Firdaus
- Physical Sciences
and Engineering Division (PSE), KAUST Solar Center (KSC), King Abdullah University of Science and Technology
(KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Yuanbao Lin
- Physical Sciences
and Engineering Division (PSE), KAUST Solar Center (KSC), King Abdullah University of Science and Technology
(KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Abdulrahman El-Labban
- Physical Sciences
and Engineering Division (PSE), KAUST Solar Center (KSC), King Abdullah University of Science and Technology
(KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Murali Gedda
- Physical Sciences
and Engineering Division (PSE), KAUST Solar Center (KSC), King Abdullah University of Science and Technology
(KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Elefterios Lidorikis
- Department of Materials Science and Engineering, University of Ioannina, Ioannina 45110, Greece
| | - Emre Yengel
- Physical Sciences
and Engineering Division (PSE), KAUST Solar Center (KSC), King Abdullah University of Science and Technology
(KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Hendrik Faber
- Physical Sciences
and Engineering Division (PSE), KAUST Solar Center (KSC), King Abdullah University of Science and Technology
(KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Thomas D. Anthopoulos
- Physical Sciences
and Engineering Division (PSE), KAUST Solar Center (KSC), King Abdullah University of Science and Technology
(KAUST), Thuwal 23955-6900, Saudi Arabia
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5
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Wong PM, Juan JC, Lai JC, Lim TH. Galvanic Replacement-Enabled Synthesis of In(OH) 3/Ag/C Nanocomposite as an Effective Photocatalyst for Ultraviolet C Degradation of Methylene Blue. ACS OMEGA 2020; 5:13719-13728. [PMID: 32566837 PMCID: PMC7301362 DOI: 10.1021/acsomega.0c00881] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/27/2020] [Accepted: 05/21/2020] [Indexed: 06/11/2023]
Abstract
Sub-10 nm indium metal nanoparticles (In NPs) stabilized on conductive carbon were reacted with silver nitrate in dark conditions in water at room temperature in a galvanic replacement manner to produce an indium hydroxide/silver/carbon nanocomposite (In(OH)3/Ag/C). The chosen carbon imparted colloidal stability, high surface area, and water dispersibility suitable for photodegradation of harmful dyes in water. The size and shape of indium hydroxide and silver nanoparticles produced were found to be 6.6 ± 0.9 nm, similar to that of the In NPs that were started with. The nanocomposite was characterized by transmission electron microscopy, energy dispersive X-ray spectroscopy, powder X-ray diffraction, and thermogravimetric analysis. The galvanic reaction between In NPs and silver nitrate was tracked with UV-vis spectroscopy in a control experiment without a carbon substrate to confirm that the reaction was indeed thermodynamically spontaneous as indicated by the positive electromotive force (EMF) of +1.14 V calculated for In/Ag+ redox couple. The photocatalytic performance of the nanocomposite was evaluated to be approximately 90% under UVC radiation when 10 ppm of methylene blue and 13 wt % of indium hydroxide/silver loading on carbon were used.
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Affiliation(s)
- Pui Munn Wong
- Department
of Physical Science, Faculty of Applied Sciences, Tunku Abdul Rahman University College, Jalan Genting Kelang, Setapak, Kuala Lumpur 53300, Malaysia
| | - Joon Ching Juan
- Nanotechnology
& Catalysis Research Centre (NANOCAT), Level 3, IPS Building, University of Malaya, 50603 Kuala Lumpur, Malaysia
| | - Jau Choy Lai
- Department
of Bioprocess and Polymer Engineering, School of Chemical & Energy
Engineering, Universiti Teknologi Malaysia, Skudai 81310, Malaysia
| | - Teck Hock Lim
- Department
of Physical Science, Faculty of Applied Sciences, Tunku Abdul Rahman University College, Jalan Genting Kelang, Setapak, Kuala Lumpur 53300, Malaysia
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Kim J, Kwon SM, Jo C, Heo JS, Kim WB, Jung HS, Kim YH, Kim MG, Park SK. Highly Efficient Photo-Induced Charge Separation Enabled by Metal-Chalcogenide Interfaces in Quantum-Dot/Metal-Oxide Hybrid Phototransistors. ACS APPLIED MATERIALS & INTERFACES 2020; 12:16620-16629. [PMID: 32180407 DOI: 10.1021/acsami.0c01176] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Quantum dot (QD)-based optoelectronics have received great interest for versatile applications because of their excellent photosensitivity, facile solution processability, and the wide range of band gap tunability. In addition, QD-based hybrid devices, which are combined with various high-mobility semiconductors, have been actively researched to enhance the optoelectronic characteristics and maximize the zero-dimensional structural advantages, such as tunable band gap and high light absorption. However, the difficulty of highly efficient charge transfer between QDs and the semiconductors and the lack of systematic analysis for the interfaces have impeded the fidelity of this platform, resulting in complex device architectures and unsatisfactory device performance. Here, we report ultrahigh detective phototransistors with highly efficient photo-induced charge separation using a Sn2S64--capped CdSe QD/amorphous oxide semiconductor (AOS) hybrid structure. The photo-induced electron transfer characteristics at the interface of the two materials were comprehensively investigated with an array of electrochemical and spectroscopic analyses. In particular, photocurrent imaging microscopy revealed that interface engineering in QD/AOS with chelating chalcometallate ligands causes efficient charge transfer, resulting in photovoltaic-dominated responses over the whole channel area. On the other hand, monodentate ligand-incorporated QD/AOS-based devices typically exhibit limited charge transfer with atomic vibration, showing photo-thermoelectric-dominated responses in the drain electrode area.
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Affiliation(s)
- Jaehyun Kim
- Displays and Devices Research Laboratory School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Korea
| | - Sung Min Kwon
- Displays and Devices Research Laboratory School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Korea
| | - Chanho Jo
- Displays and Devices Research Laboratory School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Korea
| | - Jae-Sang Heo
- Department of Medicine, University of Connecticut School of Medicine, Farmington 06030, Connecticut, United States
| | - Won Bin Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea
| | - Hyun Suk Jung
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea
| | - Yong-Hoon Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea
| | - Myung-Gil Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea
| | - Sung Kyu Park
- Displays and Devices Research Laboratory School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Korea
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Kim J, Kwon SM, Kang YK, Kim YH, Lee MJ, Han K, Facchetti A, Kim MG, Park SK. A skin-like two-dimensionally pixelized full-color quantum dot photodetector. SCIENCE ADVANCES 2019; 5:eaax8801. [PMID: 31803836 PMCID: PMC6874493 DOI: 10.1126/sciadv.aax8801] [Citation(s) in RCA: 42] [Impact Index Per Article: 8.4] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/01/2019] [Accepted: 10/02/2019] [Indexed: 05/12/2023]
Abstract
Direct full-color photodetectors without sophisticated color filters and interferometric optics have attracted considerable attention for widespread applications. However, difficulties of combining various multispectral semiconductors and improving photon transfer efficiency for high-performance optoelectronic devices have impeded the translation of these platforms into practical realization. Here, we report a low-temperature (<150°C) fabricated two-dimensionally pixelized full-color photodetector by using monolithic integration of various-sized colloidal quantum dots (QDs) and amorphous indium-gallium-zinc-oxide semiconductors. By introducing trap-reduced chelating chalcometallate ligands, highly efficient charge carrier transport and photoresistor-free fine-patterning of QD layers were successfully realized, exhibiting extremely high photodetectivity (>4.2 × 1017 Jones) and photoresponsivity (>8.3 × 103 A W-1) in a broad range of wavelengths (365 to 1310 nm). On the basis of these technologies, a wavelength discriminable phototransistor circuit array (>600 phototransistors) was implemented on a skin-like soft platform, which is expected to be a versatile and scalable approach for wide spectral image sensors and human-oriented biological devices.
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Affiliation(s)
- Jaehyun Kim
- Displays and Devices Research Lab. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Korea
| | - Sung-Min Kwon
- Displays and Devices Research Lab. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Korea
| | - Yeo Kyung Kang
- Department of Chemistry, Chung-Ang University, Seoul 06974, Korea
| | - Yong-Hoon Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea
| | - Myung-Jae Lee
- Division of Nano and Energy Convergence Research, Daegu Gyeongbuk Institute of Science and Technology (DGIST), 333, Techno Jungang Daero, Hyeonpung-Myeon, Dalseong-Gun, Daegu 42988, Korea
| | - Kwangjoon Han
- Hyundai Motor Group R&D Division, Hwaseong-si, 18280, Korea
| | - Antonio Facchetti
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL 60208, USA
- Flexterra Corporation, 8025 Lamon Avenue, Skokie, IL 60077, USA
| | - Myung-Gil Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea
| | - Sung Kyu Park
- Displays and Devices Research Lab. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Korea
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Fan X, Kneppe D, Sayevich V, Kleemann H, Tahn A, Leo K, Lesnyak V, Eychmüller A. High-Performance Ultra-Short Channel Field-Effect Transistor Using Solution-Processable Colloidal Nanocrystals. J Phys Chem Lett 2019; 10:4025-4031. [PMID: 31259561 DOI: 10.1021/acs.jpclett.9b01649] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We demonstrate high-mobility solution-processed inorganic field-effect transistors (FETs) with ultra-short channel (USC) length using semiconductor CdSe nanocrystals (NCs). Capping of the NCs with hybrid inorganic-organic CdCl3--butylamine ligands enables coarsening of the NCs during annealing at a moderate temperature, resulting in the devices having good transport characteristics with electron mobilities in the saturation regime reaching 8 cm2 V-1 s-1. Solution-based processing of the NCs and fabrication of thin films involve neither harsh conditions nor the use of hydrazine. Employing photolithographic methods, we fabricated FETs with a vertical overlap of source and drain electrodes to achieve a submicrometer channel length. To the best of our knowledge, this is the first report on an USC FET based on colloidal semiconductor NCs. Because of a short channel length, the FETs show a normalized transconductance of 4.2 m V-1 s-1 with a high on/off ratio of 105.
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Affiliation(s)
- Xuelin Fan
- Physical Chemistry , TU Dresden , Bergstrasse 66b , 01062 Dresden , Germany
| | - David Kneppe
- Dresden Integrated Center for Applied Photophysics and Photonic Materials , TU Dresden , Nöthnitzer Strasse 61 , 01187 Dresden , Germany
| | - Vladimir Sayevich
- Physical Chemistry , TU Dresden , Bergstrasse 66b , 01062 Dresden , Germany
| | - Hans Kleemann
- Dresden Integrated Center for Applied Photophysics and Photonic Materials , TU Dresden , Nöthnitzer Strasse 61 , 01187 Dresden , Germany
| | - Alexander Tahn
- Dresden Center for Nanoanalysis , TU Dresden , Helmholtzstrasse 18 , 01069 Dresden , Germany
| | - Karl Leo
- Dresden Integrated Center for Applied Photophysics and Photonic Materials , TU Dresden , Nöthnitzer Strasse 61 , 01187 Dresden , Germany
| | - Vladimir Lesnyak
- Physical Chemistry , TU Dresden , Bergstrasse 66b , 01062 Dresden , Germany
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