Interface-Induced Enhancement of Ferromagnetism in Insulating LaMnO3 Ultrathin Films

Fully Magnetically Polarized Ultrathin La0.8Sr0.2MnO3 Films

We report the observation of fully magnetically polarized ultrathin La0.8Sr0.2MnO3 films by using LaMnO3 and La0.45Sr0.55MnO3 buffer layers grown epitaxially on SrTiO3(001) substrates by molecular beam epitaxy. Specifically, we show that La0.8Sr0.2MnO3 films grown on 12-unit-cell LaMnO3 have bulk-like magnetic moments starting from a single unit cell thickness, while for the 15-unit-cell La0.45Sr0.55MnO3 buffer layer, the La0.8Sr0.2MnO3 transitions from an antiferromagnetic state to a fully spin-polarized ferromagnetic state at 4 unit cells. The magnetic results are confirmed by X-ray magnetic circular dichroism, while linear dichroic measurements carried out for the La0.8Sr0.2MnO3/La0.45Sr0.55MnO3 series show the presence of an orbital reorganization at the transition from the antiferromagnetic to ferromagnetic state corresponding to a change from a preferred in-plane orbital hole occupancy, characteristic of the A-type antiferromagnetic state of La0.45Sr0.55MnO3, to preferentially out of plane. We interpret our findings in terms of the different electronic charge transfers between the adjacent layers, confined to the unit cell in the case of insulating LaMnO3 and extended to a few unit cells in the case of conducting La0.45Sr0.55MnO3. Our work demonstrates an approach to growing ultrathin mixed-valence manganite films that are fully magnetically polarized from the single unit cell, paving the way to fully exploring the unique electronic properties of this class of strongly correlated oxide materials.

Top-Layer Engineering Reshapes Charge Transfer at Polar Oxide Interfaces

Charge-transfer phenomena at heterointerfaces are a promising pathway to engineer functionalities absent in bulk materials but can also lead to degraded properties in ultrathin films. Mitigating such undesired effects with an interlayer reshapes the interface architecture, restricting its operability. Therefore, developing less-invasive methods to control charge transfer will be beneficial. Here, an appropriate top-interface design allows for remote manipulation of the charge configuration of the buried interface and concurrent restoration of the ferromagnetic trait of the whole film. Double-perovskite insulating ferromagnetic La₂ NiMnO₆ (LNMO) thin films grown on perovskite oxide substrates are investigated as a model system. An oxygen-vacancy-assisted electronic reconstruction takes place initially at the LNMO polar interfaces. As a result, the magnetic properties of 2-5 unit cell LNMO films are affected beyond dimensionality effects. The introduction of a top electron-acceptor layer redistributes the electron excess and restores the ferromagnetic properties of the ultrathin LNMO films. Such a strategy can be extended to other interfaces and provides an advanced approach to fine-tune the electronic features of complex multilayered heterostructures.

Integration of Single Oriented Oxide Superlattices on Silicon Using Various Template Techniques

To benefit from the diverse functionalities of perovskite oxides in silicon-based complementary metal oxide semiconductor (CMOS) technology, integrating oxides into a silicon platform has become one of the major tasks for oxide research. Using the deposition of LaMnO₃/SrTiO₃ (STO) superlattices (SLs) as a case study, we demonstrate that (001) single oriented oxide SLs can be integrated on Si using various template techniques, including a single-layer buffer of STO prepared by molecular beam epitaxy (MBE) and pulsed laser deposition, a multilayer buffer of Y-stabilized zirconia/CeO₂/LaNiO₃/STO, and STO-coated two-dimensional nanosheets of Ca₂Nb₃O₁₀ (CNO) and reduced graphene oxide. The textured SL grown on STO-coated CNO nanosheets shows the highest crystallinity, owing to the small lattice mismatch between CNO and STO as well as less clamping from a Si substrate. The epitaxial SL grown on STO buffer prepared by MBE suffers the largest thermal strain, giving rise to a strongly suppressed saturation magnetization but an enhanced coercive field, as compared to the reference SL grown on an STO single crystal. These optional template techniques used for integrating oxides on Si are of significance to fulfill practical applications of oxide films in different fields.

Surface termination and stoichiometry of LaAlO3(001) surface studied by HRTEM

As an important topic of condensed matter physics, metal oxide surfaces often exhibit exotic properties such as high catalytic activity, enhanced ferroelectricity and electronic phase transition, originating from the different local symmetry with respect to the bulk. As the structure determination of oxide surfaces presents challenges to conventional surface science techniques like scanning tunneling microscopy, aberration-corrected transmission electron microscopy (TEM) has been increasingly used to solve structures of oxide surfaces. In this work, the (001) surface of LaAlO₃, one of the most used components of oxide heterostructures, has been investigated. Our TEM experiments and extensive image simulations show that the La-O terminated LaAlO₃(001) surface undergoes significant reconstructions, forming La vacancies on the surface layer. Energetically, the LaAlO₃(001) surface is stable with the reconstructed La-O termination in a wide range of oxygen chemical potentials. Polarity compensation, reduced density of states at the Fermi level and bond enhancement of subsurface oxygen anions all contribute to the stabilization of the reconstructed surface.

Magnetoelectric Coupling Induced Orbital Reconstruction and Ferromagnetic Insulating State in PbZr0.52Ti0.48O3/La0.67Sr0.33MnO3 Heterostructures

Novel phenomena at the ferromagnetic/ferroelectric interface have generated much interest. Here, a ferromagnetic insulating state with the Curie temperature about 268-286 K in PbZr_0.52Ti_0.48O₃/La_0.67Sr_0.33MnO₃ heterostructures is induced and modulated by varying the PbZr_0.52Ti_0.48O₃ thickness. An abnormally enlarged c/a ratio in La_0.67Sr_0.33MnO₃ by strain-based coupling effect leads to d_3z²-r² orbital preferable occupancy. This orbital reconstruction modulates effective electron transfer and finally leads to a ferromagnetic insulating state. Valence change induced by charge-based coupling effect could be partially responsible for change in the Curie temperature in the strongly correlated electron system of La_1-xSr_xMnO₃. This work provides a deeper understanding of strain effects near the ferromagnetic/ferroelectric interface, especially in a PbZr_1-yTi_yO₃/La_1-xSr_xMnO₃ heterostructure system.

Strain effect on orbital and magnetic structures of Mn ions in epitaxial Nd0.35Sr0.65MnO3/SrTiO3 films using X-ray diffraction and absorption

This study probes the temperature-dependent strain that is strongly correlated with the orbital and magnetic structures of epitaxial films of Nd_0.35Sr_0.65MnO₃ (NSMO) that are fabricated by pulsed laser deposition with two thicknesses, 17 (NS17) and 103 nm (NS103) on SrTiO₃ (STO) substrate. This investigation is probed using X-ray diffraction (XRD) and absorption-based techniques, X-ray linear dichroism (XLD) and the X-ray magnetic circular dichroism (XMCD). XRD indicates a significant shift in the (004) peak position that is associated with larger strain in NS17 relative to that of NS103 at both 30 and 300 K. Experimental and atomic multiplet simulated temperature-dependent Mn L_3,2-edge XLD results reveal that the stronger strain in a thinner NS17 film causes less splitting of Mn 3d e_g state at low temperature, indicating an enhancement of orbital fluctuations in the band above the Fermi level. This greater Mn 3d orbital fluctuation can be the cause of both the enhanced ferromagnetism (FM) as a result of spin moments and the reduced Néel temperature of C-type antiferromagnetism (AFM) in NS17, leading to the FM coupling of the canted-antiferromagnetism (FM-cAFM) state in NSMO/STO epitaxial films at low temperature (T = 30 K). These findings are also confirmed by Mn L_3,2-edge XMCD measurements.