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Guo L, Gu X, Hu S, Sun W, Zhang R, Qin Y, Meng K, Lu X, Liu Y, Wang J, Ma P, Zhang C, Guo A, Yang T, Yang X, Wang G, Liu Y, Wang K, Mi W, Zhang C, Jiang L, Liu L, Zheng K, Qin W, Yan W, Sun X. Strain-restricted transfer of ferromagnetic electrodes for constructing reproducibly superior-quality spintronic devices. Nat Commun 2024; 15:865. [PMID: 38286850 PMCID: PMC10824775 DOI: 10.1038/s41467-024-45200-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/30/2023] [Accepted: 01/17/2024] [Indexed: 01/31/2024] Open
Abstract
Spintronic device is the fundamental platform for spin-related academic and practical studies. However, conventional techniques with energetic deposition or boorish transfer of ferromagnetic metal inevitably introduce uncontrollable damage and undesired contamination in various spin-transport-channel materials, leading to partially attenuated and widely distributed spintronic device performances. These issues will eventually confuse the conclusions of academic studies and limit the practical applications of spintronics. Here we propose a polymer-assistant strain-restricted transfer technique that allows perfectly transferring the pre-patterned ferromagnetic electrodes onto channel materials without any damage and change on the properties of magnetism, interface, and channel. This technique is found productive for pursuing superior-quality spintronic devices with high controllability and reproducibility. It can also apply to various-kind (organic, inorganic, organic-inorganic hybrid, or carbon-based) and diverse-morphology (smooth, rough, even discontinuous) channel materials. This technique can be very useful for reliable device construction and will facilitate the technological transition of spintronic study.
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Affiliation(s)
- Lidan Guo
- Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, 100190, Beijing, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, People's Republic of China
| | - Xianrong Gu
- Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, 100190, Beijing, People's Republic of China
| | - Shunhua Hu
- Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, 100190, Beijing, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, People's Republic of China
| | - Wenchao Sun
- School of Science, Tianjin University, 300072, Tianjin, People's Republic of China
| | - Rui Zhang
- Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, 100190, Beijing, People's Republic of China
- Beijing Key Laboratory of Microstructure and Property of Solids, Faculty of Materials and Manufacturing, Beijing University of Technology, 100124, Beijing, People's Republic of China
| | - Yang Qin
- Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, 100190, Beijing, People's Republic of China
| | - Ke Meng
- Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, 100190, Beijing, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, People's Republic of China
| | - Xiangqian Lu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, 250100, Jinan, People's Republic of China
| | - Yayun Liu
- Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, 100190, Beijing, People's Republic of China
| | - Jiaxing Wang
- Beijing Key Laboratory of Microstructure and Property of Solids, Faculty of Materials and Manufacturing, Beijing University of Technology, 100124, Beijing, People's Republic of China
| | - Peijie Ma
- Beijing Key Laboratory of Microstructure and Property of Solids, Faculty of Materials and Manufacturing, Beijing University of Technology, 100124, Beijing, People's Republic of China
| | - Cheng Zhang
- Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, 100190, Beijing, People's Republic of China
| | - Ankang Guo
- Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, 100190, Beijing, People's Republic of China
- Institute of Chemistry, Chinese Academy of Sciences, 100190, Beijing, People's Republic of China
| | - Tingting Yang
- Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, 100190, Beijing, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, People's Republic of China
| | - Xueli Yang
- Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, 100190, Beijing, People's Republic of China
- Institute of Chemistry, Chinese Academy of Sciences, 100190, Beijing, People's Republic of China
| | - Guorui Wang
- CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Modern Mechanics, University of Science and Technology of China, 230027, Hefei, People's Republic of China
| | - Yaling Liu
- Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, 100190, Beijing, People's Republic of China
| | - Kai Wang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, 100044, Beijing, People's Republic of China
| | - Wenbo Mi
- School of Science, Tianjin University, 300072, Tianjin, People's Republic of China
| | - Chuang Zhang
- Institute of Chemistry, Chinese Academy of Sciences, 100190, Beijing, People's Republic of China
| | - Lang Jiang
- Institute of Chemistry, Chinese Academy of Sciences, 100190, Beijing, People's Republic of China
| | - Luqi Liu
- Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, 100190, Beijing, People's Republic of China
| | - Kun Zheng
- Beijing Key Laboratory of Microstructure and Property of Solids, Faculty of Materials and Manufacturing, Beijing University of Technology, 100124, Beijing, People's Republic of China
| | - Wei Qin
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, 250100, Jinan, People's Republic of China.
| | - Wenjing Yan
- School of Physics & Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK
| | - Xiangnan Sun
- Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, 100190, Beijing, People's Republic of China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, People's Republic of China.
- School of Material Science and Engineering, Zhengzhou University, 450001, Zhengzhou, People's Republic of China.
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Yasuji K, Sakanoue T, Yonekawa F, Kanemoto K. Visualizing electroluminescence process in light-emitting electrochemical cells. Nat Commun 2023; 14:992. [PMID: 36859421 PMCID: PMC9977921 DOI: 10.1038/s41467-023-36472-6] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/27/2022] [Accepted: 02/02/2023] [Indexed: 03/03/2023] Open
Abstract
Electroluminescence occurs via recombination reactions between electrons and holes, but these processes have not been directly evaluated. Here, we explore the operation dynamics of ionic liquid-based light-emitting electrochemical cells (LECs) with stable electroluminescence by multi-timescale spectroscopic measurements synchronized with the device operation. Bias-modulation spectroscopy, measuring spectral responses to modulated biases, reveals the bias-dependent behavior of p-doped layers varying from growth to saturation and to recession. The operation dynamics of the LEC is directly visualized by time-resolved bias-modulation spectra, revealing the following findings. Electron injection occurs more slowly than hole injection, causing delay of electroluminescence with respect to the p-doping. N-doping proceeds as the well-grown p-doped layer recedes, which occur while the electroluminescence intensity remains constant. With the growth of n-doped layer, hole injection is reduced due to charge balance, leading to hole-accumulation on the anode, after which LEC operation reaches equilibrium. These spectroscopic techniques are widely applicable to explore the dynamics of electroluminescence-devices.
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Affiliation(s)
- Kosuke Yasuji
- Department of Physics, Graduate School of Science, Osaka Metropolitan University, 3-3-138 Sugimoto, Sumiyoshi-ku, Osaka, 558-8585 Japan
| | - Tomo Sakanoue
- grid.480288.e0000 0004 1761 6725Nippon Chemical Industrial Co., Ltd., 9-11-1 Kameido, Koto, Tokyo, 136-8515 Japan
| | - Fumihiro Yonekawa
- grid.480288.e0000 0004 1761 6725Nippon Chemical Industrial Co., Ltd., 9-11-1 Kameido, Koto, Tokyo, 136-8515 Japan
| | - Katsuichi Kanemoto
- Department of Physics, Graduate School of Science, Osaka Metropolitan University, 3-3-138 Sugimoto, Sumiyoshi-ku, Osaka, 558-8585, Japan. .,Nambu Yoichiro Institute of Theoretical and Experimental Physics (NITEP), Osaka Metropolitan University, 3-3-138 Sugimoto, Sumiyoshi-ku, Osaka, 558-8585, Japan.
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3
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Tian Q, Xie S. Spin Injection and Transport in Organic Materials. MICROMACHINES 2019; 10:mi10090596. [PMID: 31510018 PMCID: PMC6780273 DOI: 10.3390/mi10090596] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/12/2019] [Revised: 09/04/2019] [Accepted: 09/04/2019] [Indexed: 06/10/2023]
Abstract
This review introduces some important spin phenomena of organic molecules and solids and their devices: Organic spin injection and transport, organic spin valves, organic magnetic field effects, organic excited ferromagnetism, organic spin currents, etc. We summarize the experimental and theoretical progress of organic spintronics in recent years and give prospects.
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Affiliation(s)
- Qipeng Tian
- School of Physics, Shandong University, Jinan 250100, China.
| | - Shijie Xie
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
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Guo L, Qin Y, Gu X, Zhu X, Zhou Q, Sun X. Spin Transport in Organic Molecules. Front Chem 2019; 7:428. [PMID: 31275920 PMCID: PMC6591472 DOI: 10.3389/fchem.2019.00428] [Citation(s) in RCA: 31] [Impact Index Per Article: 6.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/28/2019] [Accepted: 05/27/2019] [Indexed: 11/13/2022] Open
Abstract
Because of the considerable advantages of functional molecules as well as supramolecules, such as the low cost, light weight, flexibility, and large area preparation via the solution method, molecular electronics has grown into an active and rapidly developing research field over the past few decades. Beyond those well-known advantages, a very long spin relaxation time of π-conjugated molecules, due to the weak spin-orbit coupling, facilitates a pioneering but fast-growing research field, known as molecular spintronics. Recently, a series of sustained progresses have been achieved with various π-conjugated molecular matrixes where spin transport is undoubtedly an important point for the spin physical process and multifunctional applications. Currently, most studies on spin transport are carried out with a molecule-based spin valve, which shows a typical geometry with a thin-film molecular layer sandwiched between two ferromagnetic electrodes. In such a device, the spin transport process has been demonstrated to have a close correlation with spin relaxation time and charge carrier mobility of π-conjugated molecules. In this review, the recent advances of spin transport in these two aspects have been systematically summarized. Particularly, spin transport in π-conjugated molecular materials, considered as promising for spintronics development, have also been highlighted, including molecular single crystal, cocrystal, solid solution as well as other highly ordered supramolecular structures.
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Affiliation(s)
- Lidan Guo
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, CAS (Chinese Academy of Sciences) Center for Excellence in Nanoscience, Beijing, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China.,Department of Materials Science and Engineering, College of New Energy and Materials, China University of Petroleum Beijing, Beijing, China
| | - Yang Qin
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, CAS (Chinese Academy of Sciences) Center for Excellence in Nanoscience, Beijing, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
| | - Xianrong Gu
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, CAS (Chinese Academy of Sciences) Center for Excellence in Nanoscience, Beijing, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
| | - Xiangwei Zhu
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, CAS (Chinese Academy of Sciences) Center for Excellence in Nanoscience, Beijing, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
| | - Qiong Zhou
- Department of Materials Science and Engineering, College of New Energy and Materials, China University of Petroleum Beijing, Beijing, China
| | - Xiangnan Sun
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, CAS (Chinese Academy of Sciences) Center for Excellence in Nanoscience, Beijing, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
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Riminucci A, Yu ZG, Prezioso M, Cecchini R, Bergenti I, Graziosi P, Dediu VA. Controlling Magnetoresistance by Oxygen Impurities in Mq3-Based Molecular Spin Valves. ACS APPLIED MATERIALS & INTERFACES 2019; 11:8319-8326. [PMID: 30720264 DOI: 10.1021/acsami.8b20423] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The understanding of magnetoresistance (MR) in organic spin valves (OSVs) based on molecular semiconductors is still incomplete after its demonstration more than a decade ago. Although carrier concentration may play an essential role in spin transport in these devices, direct experimental evidence of its importance is lacking. We probed the role of the charge carrier concentration by studying the interplay between MR and multilevel resistive switching in OSVs. The present work demonstrates that all salient features of these devices, particularly the intimate correlation between MR and resistance, can be accounted for by the impurity band model, based on oxygen migration. Finally, we highlight the critical importance of the carrier concentration in determining spin transport and MR in OSVs and the role of interface-mediated oxygen migration in controlling the OSV response.
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Affiliation(s)
| | - Zhi-Gang Yu
- ISP/Applied Sciences Laboratory , Washington State University , Spokane , Washington 99210 , United States
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6
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Rueff JP, Rault JE, Ablett JM, Utsumi Y, Céolin D. HAXPES for Materials Science at the GALAXIES Beamline. ACTA ACUST UNITED AC 2018. [DOI: 10.1080/08940886.2018.1483648] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/28/2022]
Affiliation(s)
- J.-P. Rueff
- Synchrotron SOLEIL, Gif sur Yvette, France
- Sorbonne Université, CNRS, Paris, France
| | | | | | - Y. Utsumi
- Synchrotron SOLEIL, Gif sur Yvette, France
| | - D. Céolin
- Synchrotron SOLEIL, Gif sur Yvette, France
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Yao X, Duan Q, Tong J, Chang Y, Zhou L, Qin G, Zhang X. Magnetoresistance Effect and the Applications for Organic Spin Valves Using Molecular Spacers. MATERIALS (BASEL, SWITZERLAND) 2018; 11:E721. [PMID: 29751514 PMCID: PMC5978098 DOI: 10.3390/ma11050721] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/14/2018] [Revised: 04/27/2018] [Accepted: 04/28/2018] [Indexed: 02/04/2023]
Abstract
Organic spin devices utilizing the properties of both spin and charge inherent in electrons have attracted extensive research interest in the field of future electronic device development. In the last decade, magnetoresistance effects, including giant magetoresistance and tunneling magnetoresistance, have been observed in organic spintronics. Significant progress has been made in understanding spin-dependent transport phenomena, such as spin injection or tunneling, manipulation, and detection in organic spintronics. However, to date, materials that are effective for preparing organic spin devices for commercial applications are still lacking. In this report, we introduce basic knowledge of the fabrication and evaluation of organic spin devices, and review some remarkable applications for organic spin valves using molecular spacers. The current bottlenecks that hinder further enhancement for the performance of organic spin devices is also discussed. This report presents some research ideas for designing organic spin devices operated at room temperature.
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Affiliation(s)
- Xiannian Yao
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang 110819, China.
| | - Qingqing Duan
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang 110819, China.
| | - Junwei Tong
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang 110819, China.
| | - Yufang Chang
- Computer Teaching and Researching Section, Shenyang Conservatory of Music, Shenyang 110818, China.
| | - Lianqun Zhou
- Suzhou Institute of Biomedical, Engineering and Technology, Chinese Academy of Sciences, Suzhou 215163, China.
| | - Gaowu Qin
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang 110819, China.
- Northeastern Institute of Metal Materials Co., Ltd., Shenyang 110108, China.
| | - Xianmin Zhang
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang 110819, China.
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