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Li JC, Ma YX, Wu SH, Liu ZC, Ding PF, Dai D, Ding YT, Zhang YY, Huang Y, Lai PT, Wang YL. 1-Selector 1-Memristor Configuration with Multifunctional a-IGZO Memristive Devices Fabricated at Room Temperature. ACS APPLIED MATERIALS & INTERFACES 2024; 16:17766-17777. [PMID: 38534058 DOI: 10.1021/acsami.3c18328] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/28/2024]
Abstract
Serving as neuromorphic hardware accelerators, memristors play a crucial role in large-scale neuromorphic computing. Herein, two-terminal memristors utilizing amorphous indium-gallium-zinc oxide (a-IGZO) are fabricated through room-temperature sputtering. The electrical characteristics of these memristors are effectively modulated by varying the oxygen flow during the deposition process. The optimized a-IGZO memristor, fabricated under 3 sccm oxygen flow, presents a 5 × 103 ratio between its high- and low-resistance states, which can be maintained over 1 × 104 s with minimal degradation. Meanwhile, desirable properties such as electroforming-free and self-compliance, crucial for low-energy consumption, are also obtained in the a-IGZO memristor. Moreover, analog conductance switching is observed, demonstrating an interface-type behavior, as evidenced by its device-size-dependent performance. The coexistence of negative differential resistance with analog switching is attributed to the migration of oxygen vacancies and the trapping/detrapping of charges. Furthermore, the device demonstrates optical storage capabilities by exploiting the optical properties of a-IGZO, which can stably operate for up to 50 sweep cycles. Various synaptic functions have been demonstrated, including paired-pulse facilitation and spike-timing-dependent plasticity. These functionalities contribute to a simulated recognition accuracy of 90% for handwritten digits. Importantly, a one-selector one-memristor (1S1M) architecture is successfully constructed at room temperature by integrating a-IGZO memristor on a TaOx-based selector. This architecture exhibits a 107 on/off ratio, demonstrating its potential to suppress sneak currents among adjacent units in a memristor crossbar.
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Affiliation(s)
- Jia Cheng Li
- The School of Integrated Circuits and Electronics, and Yangtze Delta Region Academy, Beijing Institute of Technology, Beijing 100081, China
| | - Yuan Xiao Ma
- The School of Integrated Circuits and Electronics, and Yangtze Delta Region Academy, Beijing Institute of Technology, Beijing 100081, China
| | - Song Hao Wu
- The School of Integrated Circuits and Electronics, and Yangtze Delta Region Academy, Beijing Institute of Technology, Beijing 100081, China
- R&D Center for Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Zi Chun Liu
- The School of Integrated Circuits and Electronics, and Yangtze Delta Region Academy, Beijing Institute of Technology, Beijing 100081, China
| | - Peng Fei Ding
- The School of Integrated Circuits and Electronics, and Yangtze Delta Region Academy, Beijing Institute of Technology, Beijing 100081, China
| | - De Dai
- The School of Integrated Circuits and Electronics, and Yangtze Delta Region Academy, Beijing Institute of Technology, Beijing 100081, China
| | - Ying Tao Ding
- The School of Integrated Circuits and Electronics, and Yangtze Delta Region Academy, Beijing Institute of Technology, Beijing 100081, China
| | - Yi Yun Zhang
- R&D Center for Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Yuan Huang
- The School of Integrated Circuits and Electronics, and Yangtze Delta Region Academy, Beijing Institute of Technology, Beijing 100081, China
| | - Peter To Lai
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong 999077, Hong Kong
| | - Ye Liang Wang
- The School of Integrated Circuits and Electronics, and Yangtze Delta Region Academy, Beijing Institute of Technology, Beijing 100081, China
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Ma H, Zhang Y, Duan Y, Hu M, Zhang Y, Wang L, Guo Y, Li Z, Yang L. High-performance visible-near-infrared photodetector based on the N2200/Sb 2Se 3 nanorod arrays organic-inorganic hybrid heterostructure. OPTICS EXPRESS 2023; 31:43057-43066. [PMID: 38178408 DOI: 10.1364/oe.506539] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/26/2023] [Accepted: 11/04/2023] [Indexed: 01/06/2024]
Abstract
Antimony selenide (Sb2Se3) is a suitable candidate for a broadband photodetector owing to its remarkable optoelectronic properties. Achieving a high-performance self-powered photodetector through a desirable heterojunction still needs more efforts to explore. In this work, we demonstrate a broadband photodetector based on the hybrid heterostructure of Sb2Se3 nanorod arrays (NRAs) absorber and polymer acceptor (P(NDI2OD-T2), N2200). Owing to the well-matched energy levels between N2200 and Sb2Se3, the recombination of photogenerated electrons and holes in N2200/Sb2Se3 hybrid heterostructure is greatly inhibited. The photodetector can detect the wavelength from 405 to 980 nm, and exhibit high responsivity of 0.39 A/W and specific detectivity of 1.84 × 1011 Jones at 780 nm without bias voltage. Meanwhile, ultrafast response rise time (0.25 ms) and fall time (0.35 ms) are obtained. Moreover, the time-dependent photocurrent of this heterostructure-based photodetector keeps almost the same value after the storge for 40 days, indicating the excellent stability and reproducibility. These results demonstrate the potential application of a N2200/Sb2Se3 NRAs heterojunction in visible-near-infrared photodetectors.
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Li J, Guo Q, Tao Y, Li D, Yang Y, Zhou D, Pan J, Liu X, Tao Z. A Fast-Response Ultraviolet Phototransistor with a PVK QDs/ZnO Nanowire Heterostructure and Its Application in Pharmaceutical Solute Detection. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1364. [PMID: 37110949 PMCID: PMC10142717 DOI: 10.3390/nano13081364] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/24/2023] [Revised: 04/06/2023] [Accepted: 04/11/2023] [Indexed: 06/19/2023]
Abstract
The sensitivity and photoelectric noise of UV photodetectors are challenges that need to be overcome in pharmaceutical solute detection applications. This paper presents a new device concept for a CsPbBr3 QDs/ZnO nanowire heterojunction structure for phototransistors. The lattice match of the CsPbBr3 QDs and ZnO nanowire reduces the generation of trap centers and avoids carrier absorption by the composite center, which greatly improves the carrier mobility and high detectivity (8.13 × 1014 Jones). It is worth noting that by using high-efficiency PVK quantum dots as the intrinsic sensing core, the device has a high responsivity (6381 A/W) and responsivity frequency (300 Hz). Thus, a UV detection system for pharmaceutical solute detection is demonstrated, and the type of solute in the chemical solution is estimated by the waveform and the size of the output 2f signals.
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Affiliation(s)
- Jiajun Li
- School of Electronics & Information Engineering, Nanjing University of Information Science & Technology, Nanjing 210044, China
| | - Qihua Guo
- School of Electronics & Information Engineering, Nanjing University of Information Science & Technology, Nanjing 210044, China
| | - Ye Tao
- School of Electronics & Information Engineering, Nanjing University of Information Science & Technology, Nanjing 210044, China
| | - Dalin Li
- School of Electronics & Information Engineering, Nanjing University of Information Science & Technology, Nanjing 210044, China
| | - Yiting Yang
- School of Electronics & Information Engineering, Nanjing University of Information Science & Technology, Nanjing 210044, China
| | - Dandan Zhou
- College of Light Industry and Food Engineering, Nanjing Forestry University, Nanjing 210037, China
| | - Jiangyong Pan
- School of Electronics & Information Engineering, Nanjing University of Information Science & Technology, Nanjing 210044, China
| | - Xiang Liu
- School of Electronics & Information Engineering, Nanjing University of Information Science & Technology, Nanjing 210044, China
| | - Zhi Tao
- School of Electronics & Information Engineering, Nanjing University of Information Science & Technology, Nanjing 210044, China
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Wang M, Zhuang X, Liu F, Chen Y, Sa Z, Yin Y, Lv Z, Wei H, Song K, Cao B, Yang ZX. New Approach to Low-Power-Consumption, High-Performance Photodetectors Enabled by Nanowire Source-Gated Transistors. NANO LETTERS 2022; 22:9707-9713. [PMID: 36445059 DOI: 10.1021/acs.nanolett.2c04013] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Power consumption makes next-generation large-scale photodetection challenging. In this work, the source-gated transistor (SGT) is adopted first as a photodetector, demonstrating the expected low power consumption and high photodetection performance. The SGT is constructed by the functional sulfur-rich shelled GeS nanowire (NW) and low-function metal, displaying a low saturated voltage of 0.61 V ± 0.29 V and an extremely low power consumption of 7.06 pW. When the as-constructed NW SGT is used as a photodetector, the maximum value of the power consumption is as low as 11.96 nW, which is far below that of the reported phototransistors working in the saturated region. Furthermore, benefiting from the adopted SGT device, the photodetector shows a high photovoltage of 6.6 × 10-1 V, a responsivity of 7.86 × 1012 V W-1, and a detectivity of 5.87 × 1013 Jones. Obviously, the low power consumption and excellent responsivity and detectivity enabled by NW SGT promise a new approach to next-generation, high-performance photodetection technology.
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Affiliation(s)
- Mingxu Wang
- School of Physics, School of Chemistry and Chemical Engineering, State Key Laboratory of Crystal Materials, Shandong University, Jinan250100, China
| | - Xinming Zhuang
- School of Physics, School of Chemistry and Chemical Engineering, State Key Laboratory of Crystal Materials, Shandong University, Jinan250100, China
| | - Fengjing Liu
- School of Physics, School of Chemistry and Chemical Engineering, State Key Laboratory of Crystal Materials, Shandong University, Jinan250100, China
| | - Yang Chen
- School of Physics and Physical Engineering, Qufu Normal University, Qufu273165, China
| | - Zixu Sa
- School of Physics, School of Chemistry and Chemical Engineering, State Key Laboratory of Crystal Materials, Shandong University, Jinan250100, China
| | - Yanxue Yin
- School of Physics, School of Chemistry and Chemical Engineering, State Key Laboratory of Crystal Materials, Shandong University, Jinan250100, China
| | - Zengtao Lv
- School of Physics, School of Chemistry and Chemical Engineering, State Key Laboratory of Crystal Materials, Shandong University, Jinan250100, China
- School of Physical Science and Information Engineering, Liaocheng University, Liaocheng252059, China
| | - Haoming Wei
- School of Physics and Physical Engineering, Qufu Normal University, Qufu273165, China
| | - Kepeng Song
- School of Physics, School of Chemistry and Chemical Engineering, State Key Laboratory of Crystal Materials, Shandong University, Jinan250100, China
| | - Bingqiang Cao
- School of Physics and Physical Engineering, Qufu Normal University, Qufu273165, China
- Materials Research Center for Energy and Photoelectrochemical Conversion, School of Material Science and Engineering, University of Jinan, Jinan250022, China
| | - Zai-Xing Yang
- School of Physics, School of Chemistry and Chemical Engineering, State Key Laboratory of Crystal Materials, Shandong University, Jinan250100, China
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Fan Z, Shen A, Xia Y, Dong C. Amorphous InGaZnO Thin-Film Transistors with Double-Stacked Channel Layers for Ultraviolet Light Detection. MICROMACHINES 2022; 13:2099. [PMID: 36557398 PMCID: PMC9788531 DOI: 10.3390/mi13122099] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/03/2022] [Revised: 11/24/2022] [Accepted: 11/27/2022] [Indexed: 06/17/2023]
Abstract
Amorphous InGaZnO thin film transistors (a-IGZO TFTs) with double-stacked channel layers (DSCL) were quite fit for ultraviolet (UV) light detection, where the best DSCL was prepared by the depositions of oxygen-rich (OR) IGZO followed by the oxygen-deficient (OD) IGZO films. We investigated the influences of oxygen partial pressure (PO) for DSCL-TFTs on their sensing abilities by experiments as well as Technology Computer Aided Design (TCAD) simulations. With the increase in PO values for the DSCL depositions, the sensing parameters, including photogenerated current (Iphoto), sensitivity (S), responsivity (R), and detectivity (D*) of the corresponding TFTs, apparently degraded. Compared with PO variations for the OR-IGZO films, those for the OD-IGZO depositions more strongly influenced the sensing performances of the DSCL-TFT UV light detectors. The TCAD simulations showed that the variations of the electron concentrations (or oxygen vacancy (VO) density) with PO values under UV light illuminations might account for these experimental results. Finally, some design guidelines for DSCL-TFT UV light detectors were proposed, which might benefit the potential applications of these novel semiconductor devices.
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Wang M, Zhang J, Xin Q, Yi L, Guo Z, Wang Y, Song A. Self-powered UV photodetectors and imaging arrays based on NiO/IGZO heterojunctions fabricated at room temperature. OPTICS EXPRESS 2022; 30:27453-27461. [PMID: 36236916 DOI: 10.1364/oe.463926] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/16/2022] [Accepted: 07/03/2022] [Indexed: 06/16/2023]
Abstract
Self-powered UV photodetectors and imaging arrays based on p-type NiO/n-type InGaZnO (IGZO) heterojunctions are fabricated at room temperature by using ratio-frequency magnetron sputtering. The p-n heterojunction exhibits typical rectifying characteristics with a rectification ratio of 7.4×104 at a ±4 V applied bias. A high photo-responsivity of 28.8 mA/W is observed under zero bias at a wavelength of 365 nm. The photodetector possesses a fast response time of 15 ms which is among the best in reported oxide-based p-n junction-based UV photodetectors. Finally, recognition of an "H" pattern is demonstrated by a 10×10 photodetector array at zero bias. The results indicate that the NiO/IGZO based photodetectors may have a great potential in constructing large-scale self-powered UV imaging systems.
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7
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Sen A, Park H, Pujar P, Bala A, Cho H, Liu N, Gandla S, Kim S. Probing the Efficacy of Large-Scale Nonporous IGZO for Visible-to-NIR Detection Capability: An Approach toward High-Performance Image Sensor Circuitry. ACS NANO 2022; 16:9267-9277. [PMID: 35696345 DOI: 10.1021/acsnano.2c01773] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The technological ability to detect a wide spectrum range of illuminated visible-to-NIR is substantially improved for an amorphous metal oxide semiconductor, indium gallium zinc oxide (IGZO), without employing an additional photoabsorber. The fundamentally tuned morphology via structural engineering results in the creation of nanopores throughout the entire thickness of ∼30 nm. See-through nanopores have edge functionalization with vacancies, which leads to a large density of substates near the conduction band minima and valence band maxima. The presence of nanoring edges with a high concentration of vacancies is investigated using chemical composition analysis. The process of creating a nonporous morphology is sophisticated and is demonstrated using a wafer-scale phototransistor array. The performance of the phototransistors is assessed in terms of photosensitivity (S) and photoresponsivity (R); both are of high magnitudes (S = 8.6 × 104 at λex = 638 nm and Pinc = 512 mW cm2-; R = 120 A W1- at Pinc = 2 mW cm2- for the same λex). Additionally, the 7 × 5 array of 35 phototransistors is effective in sensing and reproducing the input image by responding to selectively illuminated pixels.
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Affiliation(s)
- Anamika Sen
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Heekyeong Park
- Harvard Institute of Medicine, Harvard Medical School, Harvard University, Brigham and Women's Hospital, Boston, Massachusetts 02115, United States
| | - Pavan Pujar
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Arindam Bala
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Haewon Cho
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Na Liu
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Srinivas Gandla
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Sunkook Kim
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon-si, Gyeonggi-do 16419, Republic of Korea
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Feria DN, Hsu FH, Chan YC, Chen BR, Wu CJ, Lin TY. The dual-detection mode and improved photoresponse of IGZO-based photodetectors by interfacing with water-soluble biomaterials. NANOTECHNOLOGY 2022; 33:245203. [PMID: 35172281 DOI: 10.1088/1361-6528/ac55d3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/02/2021] [Accepted: 02/16/2022] [Indexed: 06/14/2023]
Abstract
The use of conventional fabrication methods rapidly developed the performance and notable enhancements of optoelectronic devices. However, it proved challenging to develop and demonstrate stable optoelectronic devices with biodegradability and biocompatibility properties towards sustainable development and extensive applications. This study incorporates a water-soluble Cr-phycoerythrin (Cr-PE) biomaterial to observe its optical and electronic properties effects on the pristine indium gallium zinc oxide (IGZO)-based photodetector. The fabricated photodetector demonstrates an extended absorption detection region, enhanced optoelectronic performance, and switchable function properties. The resulting photocurrent and responsivity of the IGZO/Cr-PE structure have increased by 5.7 and 7.1 times as compared to the pristine IGZO photodetector. It was also observed that the photodetector could operate in UV and UV-visible with enhanced optical properties by effectively adding the water-soluble Cr-PE. Also, the sensing region of IGZO photodetector becomes changeable. It exhibits switchable dual detection by alternatively dripping and removing the Cr-PE on the IGZO layer. Different measurement parameters such as detectivity, repeatability, and sensitivity are highlighted to effectively prove the advantage of including Cr-PE on the photodetector structure. This study contributes to understanding the potential functions in improving optoelectronic devices through an environmental-friendly method.
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Affiliation(s)
- Denice N Feria
- Department of Optoelectronics and Materials Technology, National Taiwan Ocean University, Keelung, 202, Taiwan
| | - Feng-Hsuan Hsu
- Department of Optoelectronics and Materials Technology, National Taiwan Ocean University, Keelung, 202, Taiwan
| | - Yi-Chieh Chan
- Department of Optoelectronics and Materials Technology, National Taiwan Ocean University, Keelung, 202, Taiwan
| | - Bo-Rui Chen
- Doctoral Degree Program in Marine Biotechnology, National Taiwan Ocean University, Keelung, 202, Taiwan
| | - Chang-Jer Wu
- Department of Food Science and Center of Excellence for the Oceans, National Taiwan Ocean University, Keelung, 202, Taiwan
| | - Tai-Yuan Lin
- Department of Optoelectronics and Materials Technology, National Taiwan Ocean University, Keelung, 202, Taiwan
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Zhang Y, He G, Wang L, Wang W, Xu X, Liu W. Ultraviolet-Assisted Low-Thermal-Budget-Driven α-InGaZnO Thin Films for High-Performance Transistors and Logic Circuits. ACS NANO 2022; 16:4961-4971. [PMID: 35274929 DOI: 10.1021/acsnano.2c01286] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Developing a low-temperature fabrication strategy of an amorphous InGaZnO (α-IGZO) channel layer is a prerequisite for high-performance oxide-based thin film transistor (TFT) flexible device applications. Herein, an ultraviolet-assisted oxygen ambient rapid thermal annealing method (UV-ORTA), which combines ultraviolet irradiation with rapid annealing treatment in an oxygen atmosphere, was proposed to realize the achievement of high-performance α-IGZO TFTs at low temperature. Experimental results have confirmed that UV-ORTA treatment has the ability to suppress defects and obtain high-quality films similar to high-temperature-annealing-treated samples. α-IGZO/HfAlO TFTs with high-performance and low-voltage operating have been achieved at a low temperature of 180 °C for 200 s, including a high μsat of 23.12 cm2 V-1 S-1, large Ion/off of 1.1 × 108, small subthreshold swing of 0.08 V/decade, and reliable stability under bias stress, respectively. As a demonstration of complex logic applications, a low-voltage resistor-loaded unipolar inverter based on an α-IGZO/HfAlO TFT has been built, demonstrating full swing characteristics and a high gain of 13.8. Low-frequency noise (LFN) characteristics of α-IGZO/HfAlO TFTs have been presented and concluded that the noise source tended to a carrier number fluctuation (ΔN) model from a carrier number and correlated mobility fluctuation (ΔN-Δμ) model. As a result, it can be inferred that the low-temperature UV-ORTA technique to improve α-IGZO thin film quality provides a facile and designable process for the integration of α-IGZO TFTs into a flexible electronic system.
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Affiliation(s)
- Yongchun Zhang
- School of Materials Science and Engineering, Anhui University, Hefei 230601, China
- School of Mechanical and Electrical Engineering, Chuzhou University, Chuzhou 239000, China
| | - Gang He
- School of Materials Science and Engineering, Anhui University, Hefei 230601, China
- Institute of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Leini Wang
- School of Materials Science and Engineering, Anhui University, Hefei 230601, China
| | - Wenhao Wang
- School of Materials Science and Engineering, Anhui University, Hefei 230601, China
| | - Xiaofen Xu
- School of Materials Science and Engineering, Anhui University, Hefei 230601, China
| | - Wenjun Liu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
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Xu H, Kim T, Han H, Kim MJ, Hur JS, Choi CH, Chang JH, Jeong JK. High-Performance Broadband Phototransistor Based on TeO x/IGTO Heterojunctions. ACS APPLIED MATERIALS & INTERFACES 2022; 14:3008-3017. [PMID: 35000384 DOI: 10.1021/acsami.1c18576] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Ultraviolet to infrared broadband spectral detection capability is a technological challenge for sensing materials being developed for high-performance photodetection. In this work, we stacked 9 nm-thick tellurium oxide (TeOx) and 8 nm-thick InGaSnO (IGTO) into a heterostructure at a low temperature of 150 °C. The superior photoelectric characteristics we achieved benefit from the intrinsic optical absorption range (300-1500 nm) of the hexagonal tellurium (Te) phase in the TeOx film, and photoinduced electrons are driven effectively by band alignment at the TeOx/IGTO interface under illumination. A photosensor based on our optimized heterostructure exhibited a remarkable detectivity of 1.6 × 1013 Jones, a responsivity of 84 A/W, and a photosensitivity of 1 × 105, along with an external quantum efficiency of 222% upon illumination by blue light (450 nm). Simultaneously, modest detection properties (responsivity: ∼31 A/W, detectivity: ∼6 × 1011 Jones) for infrared irradiation at 970 nm demonstrate that this heterostructure can be employed as a broadband phototransistor. Furthermore, its low-temperature processability suggests that our proposed concept might be used to design array optoelectronic devices for wide band detection with high sensitivity, flexibility, and stability.
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Affiliation(s)
- Hongwei Xu
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Taikyu Kim
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - HeeSung Han
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Min Jae Kim
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Jae Seok Hur
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Cheol Hee Choi
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Joon-Hyuk Chang
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Jae Kyeong Jeong
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea
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Yoo H, Lee IS, Jung S, Rho SM, Kang BH, Kim HJ. A Review of Phototransistors Using Metal Oxide Semiconductors: Research Progress and Future Directions. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2006091. [PMID: 34048086 DOI: 10.1002/adma.202006091] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/06/2020] [Revised: 10/15/2020] [Indexed: 06/12/2023]
Abstract
Metal oxide thin-film transistors have been continuously researched and mass-produced in the display industry. However, their phototransistors are still in their infancy. In particular, utilizing metal oxide semiconductors as phototransistors is difficult because of the limited light absorption wavelength range and persistent photocurrent (PPC) phenomenon. Numerous studies have attempted to improve the detectable light wavelength range and the PPC phenomenon. Here, recent studies on metal oxide phototransistors are reviewed, which have improved the range of light wavelengths and the PPC phenomenon by introducing an absorption layer of oxide or non-oxide hybrid structure. The materials of the absorption layer applied to absorb long-wavelength light are classified into oxides, chalcogenides, organic materials, perovskites, and nanodots. Finally, next-generation convergence studies combined with other research fields are introduced and future research directions are detailed.
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Affiliation(s)
- Hyukjoon Yoo
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - I Sak Lee
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Sujin Jung
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Sung Min Rho
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Byung Ha Kang
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Hyun Jae Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
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12
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Yoo S, Kim DS, Hong WK, Yoo JI, Huang F, Ko HC, Park JH, Yoon J. Enhanced Ultraviolet Photoresponse Characteristics of Indium Gallium Zinc Oxide Photo-Thin-Film Transistors Enabled by Surface Functionalization of Biomaterials for Real-Time Ultraviolet Monitoring. ACS APPLIED MATERIALS & INTERFACES 2021; 13:47784-47792. [PMID: 34585581 DOI: 10.1021/acsami.1c15565] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Indium gallium zinc oxide (IGZO) is one of the most promising materials for diverse optoelectronic applications based on thin-film transistors (TFTs) including ultraviolet (UV) photodetectors. In particular, the monitoring of UV-A (320-400 nm) exposure is very useful for healthcare applications because it can be used to prevent various human skin and eye-related diseases. However, the relatively weak optical absorption in the UV-A range and the persistent photoconductivity (PPC) arising from the oxygen vacancy-related states of IGZO thin films limit efficient UV monitoring. In this paper, we report the enhancement of the UV photoresponse characteristics of IGZO photo-TFTs by the surface functionalization of biomolecules on an IGZO channel. The biomaterial/IGZO interface plays a crucial role in enhancing UV-A absorption and suppressing PPC under negative gate bias, resulting in not only increased photoresponsivity and specific detectivity but also a fast and repeatable UV photoresponse. In addition, turning off the device without external bias completely eliminates PPC due to the internal electric field induced by the surface functionalization of biomaterials. Such a volatile feature of PPC enables the fast and repeatable UV photoresponse. These results suggest the potential of IGZO photo-TFTs combined with biomaterials for real-time UV monitoring.
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Affiliation(s)
- Seonggwang Yoo
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
| | - Da Som Kim
- Division of Biotechnology, College of Environmental and Bioresources Sciences, Jeonbuk National University, Iksan, Jeollabuk-do 54596, Republic of Korea
| | - Woong-Ki Hong
- Center for Scientific Instrumentation, Korea Basic Science Institute, Daejeon 34133, Republic of Korea
| | - Jung Il Yoo
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
| | - Fu Huang
- Division of Biotechnology, College of Environmental and Bioresources Sciences, Jeonbuk National University, Iksan, Jeollabuk-do 54596, Republic of Korea
| | - Heung Cho Ko
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
| | - Jung Hee Park
- Division of Biotechnology, College of Environmental and Bioresources Sciences, Jeonbuk National University, Iksan, Jeollabuk-do 54596, Republic of Korea
- Advanced Institute of Environment and Bioscience, College of Environmental and Bioresources Sciences, Jeonbuk National University, Iksan, Jeollabuk-do 54596, Republic of Korea
| | - Jongwon Yoon
- Jeonju Center, Korea Basic Science Institute, Jeonju, Jeollabuk-do 54907, Republic of Korea
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Chen Y, Wang H, Yao Y, Wang Y, Ma C, Samorì P. Synaptic Plasticity Powering Long-Afterglow Organic Light-Emitting Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2103369. [PMID: 34369012 DOI: 10.1002/adma.202103369] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/03/2021] [Revised: 06/03/2021] [Indexed: 06/13/2023]
Abstract
Long-lasting luminescence in optoelectronic devices is highly sought after for applications in optical data storage and display technology. While in light-emitting diodes this is achieved by exploiting long-afterglow organic materials as active components, such a strategy has never been pursued in light-emitting transistors, which are still rather unexplored and whose technological potential is yet to be demonstrated. Herein, the fabrication of long-afterglow organic light-emitting transistors (LAOLETs) is reported whose operation relies on an unprecedented strategy based on a photoinduced synaptic effect in an inorganic indium-gallium-zinc-oxide (IGZO) semiconducting channel layer, to power a persistent electroluminescence in organic light-emitting materials. Oxygen vacancies in the IGZO layer, produced by irradiation at λ = 312 nm, free electrons in excess yielding to a channel conductance increase. Due to the slow recombination kinetics of photogenerated electrons to oxygen vacancies in the channel layer, the organic material can be fueled by postsynaptic current and displays a long-lived light-emission (hundreds of seconds) after ceasing UV irradiation. As a proof-of-concept, the LAOLETs are integrated in active-matrix light-emitting arrays operating as visual UV sensors capable of long-lifetime green-light emission in the irradiated regions.
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Affiliation(s)
- Yusheng Chen
- Université de Strasbourg, CNRS, ISIS, 8 allée Gaspard Monge, Strasbourg, 67000, France
| | - Hanlin Wang
- Université de Strasbourg, CNRS, ISIS, 8 allée Gaspard Monge, Strasbourg, 67000, France
| | - Yifan Yao
- Université de Strasbourg, CNRS, ISIS, 8 allée Gaspard Monge, Strasbourg, 67000, France
| | - Ye Wang
- Université de Strasbourg, CNRS, ISIS, 8 allée Gaspard Monge, Strasbourg, 67000, France
| | - Chun Ma
- Université de Strasbourg, CNRS, ISIS, 8 allée Gaspard Monge, Strasbourg, 67000, France
| | - Paolo Samorì
- Université de Strasbourg, CNRS, ISIS, 8 allée Gaspard Monge, Strasbourg, 67000, France
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14
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Shin SG, Bark CW, Choi HW. Study on Performance Improvements in Perovskite-Based Ultraviolet Sensors Prepared Using Toluene Antisolvent and CH 3NH 3Cl. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:1000. [PMID: 33924664 PMCID: PMC8069466 DOI: 10.3390/nano11041000] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/20/2021] [Revised: 04/09/2021] [Accepted: 04/10/2021] [Indexed: 11/16/2022]
Abstract
In this study, a simply structured perovskite-based ultraviolet C (UVC) sensor was prepared using a one-step, low-temperature solution-processing coating method. The UVC sensor utilized CH3NH3PbBr3 perovskite as the light-absorbing layer. To improve the characteristics of CH3NH3PbBr3, an antisolvent process using toluene and the addition of CH3NH3Cl were introduced. The device with these modifications exhibited a response rise/fall time of 15.8/16.2 ms, mobility of 158.7 cm2/V·s, responsivity of 4.57 mA/W, detectivity of 1.02 × 1013 Jones, and external quantum efficiency of 22.32% under the 254-nm UV illumination. Therefore, this methodology could be a good approach in facilitating UVC detection.
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Affiliation(s)
| | | | - Hyung Wook Choi
- Department of Electrical Engineering, Gachon University, 1342 Seongnam Daero, Seongnam-Si 13120, Korea; (S.G.S.); (C.W.B.)
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15
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Huang W, Xia X, Zhu C, Steichen P, Quan W, Mao W, Yang J, Chu L, Li X. Memristive Artificial Synapses for Neuromorphic Computing. NANO-MICRO LETTERS 2021; 13:85. [PMID: 34138298 PMCID: PMC8006524 DOI: 10.1007/s40820-021-00618-2] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/03/2020] [Accepted: 01/29/2021] [Indexed: 05/06/2023]
Abstract
Neuromorphic computing simulates the operation of biological brain function for information processing and can potentially solve the bottleneck of the von Neumann architecture. This computing is realized based on memristive hardware neural networks in which synaptic devices that mimic biological synapses of the brain are the primary units. Mimicking synaptic functions with these devices is critical in neuromorphic systems. In the last decade, electrical and optical signals have been incorporated into the synaptic devices and promoted the simulation of various synaptic functions. In this review, these devices are discussed by categorizing them into electrically stimulated, optically stimulated, and photoelectric synergetic synaptic devices based on stimulation of electrical and optical signals. The working mechanisms of the devices are analyzed in detail. This is followed by a discussion of the progress in mimicking synaptic functions. In addition, existing application scenarios of various synaptic devices are outlined. Furthermore, the performances and future development of the synaptic devices that could be significant for building efficient neuromorphic systems are prospected.
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Affiliation(s)
- Wen Huang
- New Energy Technology Engineering Laboratory of Jiangsu Province and School of Science, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing, 210023, People's Republic of China.
| | - Xuwen Xia
- New Energy Technology Engineering Laboratory of Jiangsu Province and School of Science, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing, 210023, People's Republic of China
| | - Chen Zhu
- College of Electronic and Optical Engineering and College of Microelectronics, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing, 210023, People's Republic of China
| | - Parker Steichen
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, 98195-2120, USA
| | - Weidong Quan
- New Energy Technology Engineering Laboratory of Jiangsu Province and School of Science, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing, 210023, People's Republic of China
| | - Weiwei Mao
- New Energy Technology Engineering Laboratory of Jiangsu Province and School of Science, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing, 210023, People's Republic of China
| | - Jianping Yang
- New Energy Technology Engineering Laboratory of Jiangsu Province and School of Science, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing, 210023, People's Republic of China
| | - Liang Chu
- New Energy Technology Engineering Laboratory of Jiangsu Province and School of Science, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing, 210023, People's Republic of China.
| | - Xing'ao Li
- New Energy Technology Engineering Laboratory of Jiangsu Province and School of Science, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing, 210023, People's Republic of China.
- Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials, Jiangsu National Synergistic Innovation Center for Advanced Materials, School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications (NUPT), 9 Wenyuan Road, Nanjing, 210023, People's Republic of China.
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16
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He J, Liu X, Song L, Li H, Zu H, Li J, Zhang H, Zhang J, Qin Y, Wang F. High Annealing Stability of InAlZnO Nanofiber Field-Effect Transistors with Improved Morphology by Al Doping. J Phys Chem Lett 2021; 12:1339-1345. [PMID: 33502855 DOI: 10.1021/acs.jpclett.1c00030] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
In2O3 nanofibers usually suffer a high off-current and consequent low on/off current ratio, as well as a large negative threshold voltage (Vth). Furthermore, regarding Zn doped binary-cation In2O3 nanofibers, severe thermal diffusion of Zn elements can result in deteriorated electrical performance when annealed at high temperature. Here, we applied an electrospinning technique to obtain ternary-cation IAZO nanofibers with controllable Vth and chemical stoichiometry. The presence of the Al element in IAZO nanofibers can lead to more superior microstructure with improved uniformity, lower surface defect, and superior metal-oxide-metal lattice at high annealing temperature. Consequently, our Al-doped ternary-cation IAZO devices exhibited an improved on/off current ratio of 107 and a high electron mobility of ∼10 cm2 V-1 s-1. Moreover, the electron mobility can be increased to 30 cm2 V-1 s-1 in our low-voltage operated FETs with high-k AlOx as the dielectric layer, which can be envisioned to exhibit vast implications for high-performance transparent electronics.
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Affiliation(s)
- Junyu He
- College of Physics and State Key Laboratory of Bio Fibers and Eco Textiles, Qingdao University, Qingdao 266071, China
| | - Xuhai Liu
- College of Microtechnology & Nanotechnology, Qingdao University, Qingdao 266071, China
| | - Longfei Song
- College of Physics and State Key Laboratory of Bio Fibers and Eco Textiles, Qingdao University, Qingdao 266071, China
| | - Hao Li
- College of Physics and State Key Laboratory of Bio Fibers and Eco Textiles, Qingdao University, Qingdao 266071, China
| | - Hongliang Zu
- College of Physics and State Key Laboratory of Bio Fibers and Eco Textiles, Qingdao University, Qingdao 266071, China
| | - Jiayi Li
- College of Physics and State Key Laboratory of Bio Fibers and Eco Textiles, Qingdao University, Qingdao 266071, China
| | - Hongwei Zhang
- College of Physics and State Key Laboratory of Bio Fibers and Eco Textiles, Qingdao University, Qingdao 266071, China
| | - Jun Zhang
- College of Physics and State Key Laboratory of Bio Fibers and Eco Textiles, Qingdao University, Qingdao 266071, China
| | - Yuanbin Qin
- School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an 710000, China
| | - Fengyun Wang
- College of Physics and State Key Laboratory of Bio Fibers and Eco Textiles, Qingdao University, Qingdao 266071, China
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Wu Q, Dang B, Lu C, Xu G, Yang G, Wang J, Chuai X, Lu N, Geng D, Wang H, Li L. Spike Encoding with Optic Sensory Neurons Enable a Pulse Coupled Neural Network for Ultraviolet Image Segmentation. NANO LETTERS 2020; 20:8015-8023. [PMID: 33063511 DOI: 10.1021/acs.nanolett.0c02892] [Citation(s) in RCA: 26] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Drawing inspiration from biology, neuromorphic systems are of great interest in direct interaction and efficient processing of analogue signals in the real world and could be promising for the development of smart sensors. Here, we demonstrate an artificial sensory neuron consisting of an InGaZnO4 (IGZO4)-based optical sensor and NbOx-based oscillation neuron in series, which can simultaneously sense the optical information even beyond the visible light region and encode them into electrical impulses. Such artificial vision sensory neurons can convey visual information in a parallel manner analogous to biological vision systems, and the output spikes can be effectively processed by a pulse coupled neural network, demonstrating the capability of image segmentation out of a complex background. This study could facilitate the construction of artificial visual systems and pave the way for the development of light-driven neurorobotics, bioinspired optoelectronics, and neuromorphic computing.
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Affiliation(s)
- Quantan Wu
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Bingjie Dang
- Key Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
- Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing 100871, China
| | - Congyan Lu
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Guangwei Xu
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Guanhua Yang
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jiawei Wang
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xichen Chuai
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Nianduan Lu
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Di Geng
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hong Wang
- Key Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
| | - Ling Li
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
- University of Chinese Academy of Sciences, Beijing 100049, China
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18
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Yan Y, Chen Q, Wu X, Wang X, Li E, Ke Y, Liu Y, Chen H, Guo T. High-Performance Organic Electrochemical Transistors with Nanoscale Channel Length and Their Application to Artificial Synapse. ACS APPLIED MATERIALS & INTERFACES 2020; 12:49915-49925. [PMID: 33084310 DOI: 10.1021/acsami.0c15553] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Organic electrochemical transistors (OECTs) have attracted considerable interests for various applications ranging from biosensors to digital logic circuits and artificial synapses. However, the majority of reported OECTs utilize large channel length up to several or several tens of micrometers, which limits the device performance and leads to low transistor densities. Here, we demonstrate a new design of vertical OECT architecture with a nanoscale channel length down to ∼100 nm. The devices exhibit a high on-state current of over 20 mA under a low bias voltage of 0.5 V, a fast transient response of less than 300 μs, and an extraordinary transconductance up to 68.88 mS, representing a record-high value for OECTs. The excellent electrical performance is attributed to the novel structure with a nanoscale channel length defined by the channel material thickness, which is intrinsically different from that of conventional OECTs with the channel length limited by the lithography resolution. Owing to the low thermal budget, we fabricate flexible devices on a flexible substrate, which exhibit unprecedented endurance characteristics and mechanical robustness after 1000 blending cycles. Furthermore, the proposed device is capable of mimicking biological inhibitory synapses for application in intelligent artificial neural networks. Our work not only pushes the performance limit of OECTs but also opens up a new design of OECTs for high-performance biosensors, digital logic, and neuromorphic devices.
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Affiliation(s)
- Yujie Yan
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| | - Qizhen Chen
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Xiaomin Wu
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Xiumei Wang
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Enlong Li
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Yudan Ke
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Yuan Liu
- State Key Laboratory for Chemo/Biosensing and Chemometrics, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Huipeng Chen
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| | - Tailiang Guo
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
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19
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Chen J, Xu J, Shi S, Cao R, Liu D, Bu Y, Yang P, Xu J, Zhang X, Li L. Novel Self-Powered Photodetector with Binary Photoswitching Based on SnS x/TiO 2 Heterojunctions. ACS APPLIED MATERIALS & INTERFACES 2020; 12:23145-23154. [PMID: 32338868 DOI: 10.1021/acsami.0c05247] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
Binary photoresponse characteristics can help realize optical signal processing and logic operations. UV photodetectors (PDs) with SnSx nanoflakes and TiO2 nanorod arrays (NRs) show a novel binary photoswitching behavior (change in current from positive to negative) by manipulating the light wavelength without an external power source, utilizing the interfacial recombination of the photogenerated carriers in the type-I SnSx/TiO2 heterojunctions. The enhanced responsivity (R*), detectivity (D*), and fast photoresponse time for self-powered SnSx/TiO2PDs can be achieved by adjusting the phase ratio of SnS and SnS2 nanoflakes. The binary photoswitching in the self-powered UV PDs can be applied in the encrypted optical signal processing and imaging in some special conditions without external bias.
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Affiliation(s)
- Jing Chen
- School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, and Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384, China
| | - Jianping Xu
- School of Science, Tianjin University of Technology, Tianjin 300384, China
| | - Shaobo Shi
- School of Science, Tianjin University of Technology and Education, Tianjin 300222, China
| | - Rui Cao
- School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, and Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384, China
| | - Ding Liu
- School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, and Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384, China
| | - Yichen Bu
- School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, and Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384, China
| | - Pengcheng Yang
- School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, and Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384, China
| | - Jianghua Xu
- School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, and Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384, China
| | - Xiaosong Zhang
- School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, and Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384, China
| | - Lan Li
- School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, and Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384, China
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20
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Chen Z, Sheleg G, Shekhar H, Tessler N. Structure-Property Relation in Organic-Metal Oxide Hybrid Phototransistors. ACS APPLIED MATERIALS & INTERFACES 2020; 12:15430-15438. [PMID: 32134241 PMCID: PMC7467547 DOI: 10.1021/acsami.9b22165] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/07/2019] [Accepted: 03/05/2020] [Indexed: 06/10/2023]
Abstract
We report an optoelectronic device consisting of a solution-processed indium gallium zinc oxide (IGZO) thin-film transistor and vacuum-deposited small organic molecules. Depending on the configurations of the organic materials, either bulk heterojunction or planar heterojunction (PHJ), the device assumes the functionality of either a photosensor or a photoinduced memory, respectively. Under λ = 625 nm light illumination, the photosensor shows response and recovery time of ∼50 ms, responsivity of ∼5 mA/W, sensitivity above 104, and a linear response. The mechanism of the photoinduced memory is studied experimentally and verified using a device simulation. We find that the memory is due to long charge retention time at the organic PHJ interface which is stable for over 9 days. It is correlated with the low leakage current found in ordered organic junctions having low subgap tail states. The presented integration of the PHJ with the transistor constitutes a new design of write-once-read-many-times memory device that is likely to be attractive for low-cost applications.
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21
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Yoo H, Kim WG, Kang BH, Kim HT, Park JW, Choi DH, Kim TS, Lim JH, Kim HJ. High Photosensitive Indium-Gallium-Zinc Oxide Thin-Film Phototransistor with a Selenium Capping Layer for Visible-Light Detection. ACS APPLIED MATERIALS & INTERFACES 2020; 12:10673-10680. [PMID: 32052953 DOI: 10.1021/acsami.9b22634] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Visible light can be detected using an indium-gallium-zinc oxide (IGZO)-based phototransistor, with a selenium capping layer (SCL) that functions as a visible light absorption layer. Selenium (Se) exhibits photoconductive properties as its conductivity increases with illumination. We report an IGZO phototransistor with an SCL (SCL/IGZO phototransistor) that demonstrated optimal photoresponse characteristics when the SCL was 150 nm thick. The SCL/IGZO phototransistor exhibited a photoresponsivity of 1.39 × 103 A/W, photosensitivity of 4.39 × 109, detectivity of 3.44 × 1013 Jones, and external quantum efficiency of 3.52 × 103% when illuminated by green light (532 nm). Ultraviolet-visible spectroscopy and ultraviolet photoelectron spectroscopy analysis showed that Se has a narrow energy band gap, in which visible light is absorbed and forms a p-n junction with IGZO so that photogenerated electron-hole pairs are easily separated, which makes recombination more challenging. We show that electrons generated in the SCL flow through the IGZO layer, which enables the phototransistor to detect visible light. Furthermore, the SCL/IGZO phototransistor exhibited excellent durability and reversibility owing to the constant light and dark current and the time-dependent photoresponse characteristics over 8000 s when a red light (635 nm) source was turned on and off at a frequency of 0.1 Hz.
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Affiliation(s)
- Hyukjoon Yoo
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Won-Gi Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Byung Ha Kang
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Hyung Tae Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Jeong Woo Park
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Dong Hyun Choi
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Tae Sang Kim
- Frontier Technology Team, Display Research Center, Samsung Display, 1 Samsung-ro, Giheung-gu, Yongin-si, Gyeonggi-do 17113, Republic of Korea
| | - Jun Hyung Lim
- Frontier Technology Team, Display Research Center, Samsung Display, 1 Samsung-ro, Giheung-gu, Yongin-si, Gyeonggi-do 17113, Republic of Korea
| | - Hyun Jae Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
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22
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Tao J, Liu D, Qin Z, Shao B, Jing J, Li H, Dong H, Xu B, Tian W. Organic UV-Sensitive Phototransistors Based on Distriphenylamineethynylpyrene Derivatives with Ultra-High Detectivity Approaching 10 18. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1907791. [PMID: 32058647 DOI: 10.1002/adma.201907791] [Citation(s) in RCA: 41] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/27/2019] [Revised: 01/19/2020] [Indexed: 05/12/2023]
Abstract
Organic photodetectors with UV-sensitivity are of great potential for various optoelectronic applications. Integration of high charge carrier mobility, long exciton diffusion length as well as unique UV-sensitivity for active materials is crucial for construction of UV-sensitive devices with high performance, however, very few organic semiconductors can integrate these properties simultaneously. Herein, two novel organic semiconductors containing large steric hindrance triphenylamine groups, 1,6-distriphenylamineethynylpyrene (1,6-DTEP) and 2,7-distriphenylamineethynylpyrene (2,7-DTEP) are designed and synthesized. It demonstrates that the single crystals of both 1,6-DTEP and 2,7-DTEP exhibit superior integrated optoelectronic properties of high charge carrier mobility, unique UV absorption, high photoluminescence quantum yields as well as small exciton binding energies. Organic phototransistors constructed using 1,6-DTEP and 2,7-DTEP single crystals show ultrasensitive performance with ultra-high photoresponsivity of 2.86 × 106 and 1.04 × 105 A W-1 , detectivity (D*) of above 1.49 × 1018 and 5.28 × 1016 Jones under 370 nm light illumination, respectively. It indicates the great potential of 1,6-DTEP and 2,7-DTEP-based phototransistors for organic UV-photodetector applications and also provides a new design strategy to develop series of better performance UV photoelectric organic materials for related research in organic optoelectronics.
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Affiliation(s)
- Jingwei Tao
- State Key Laboratory of Supramolecular Structure and Materials, Jilin University, Changchun, 130012, China
| | - Dan Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhengsheng Qin
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Bo Shao
- State Key Laboratory of Supramolecular Structure and Materials, Jilin University, Changchun, 130012, China
| | - Jiangbo Jing
- State Key Laboratory of Supramolecular Structure and Materials, Jilin University, Changchun, 130012, China
| | - Hongxiang Li
- Key Laboratory of Synthetic and Self-assembly Chemistry for Organic Functional Molecules, Shanghai Institute of Organic Chemistry, Chinese Academy of Sciences, Shanghai, 200032, China
| | - Huanli Dong
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Bin Xu
- State Key Laboratory of Supramolecular Structure and Materials, Jilin University, Changchun, 130012, China
| | - Wenjing Tian
- State Key Laboratory of Supramolecular Structure and Materials, Jilin University, Changchun, 130012, China
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Wang XL, Shao Y, Wu X, Zhang MN, Li L, Liu WJ, Zhang DW, Ding SJ. Light response behaviors of amorphous In–Ga–Zn–O thin-film transistors via in situ interfacial hydrogen doping modulation. RSC Adv 2020; 10:3572-3578. [PMID: 35497714 PMCID: PMC9048488 DOI: 10.1039/c9ra09646a] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/19/2019] [Accepted: 01/12/2020] [Indexed: 12/31/2022] Open
Abstract
Thin-film transistors (TFTs) based on amorphous In–Ga–Zn–O (a-IGZO) channels present high mobility, large-area uniformity, mechanical flexibility and photosensitivity, and thus have extensive applicability in photodetectors, wearable devices, etc. However, pure a-IGZO based photosensors only exhibit a UV light response with limited sensitivity performance. By utilizing in situ interfacial hydrogen doping, it is demonstrated that the a-IGZO TFTs with the Al2O3 dielectric deposited by plasma-enhanced atomic layer deposition at room temperature (RT) have excellent photosensing performance, such as a photoresponsivity of over 6 × 105 A W−1 and a light to dark current ratio up to 107. This is attributed to spontaneous interfacial hydrogen doping into the a-IGZO channel during sputtering deposition of a-IGZO on hydrogen-rich Al2O3 films, thus generating subgap states in the band gap of IGZO. Further, color pattern imaging was achieved by employing an array of the color distinguishable devices, and flexibility was demonstrated by fabricating the TFTs onto polymer substrates. Moreover, it is also found that both the RT and 150 °C Al2O3 a-IGZO TFTs exhibit typical light-stimulated synaptic behaviors, including excitatory post-synaptic current and pair-pules facilitation, etc., and the memory time of the synaptic devices can be easily modulated by the degree of the interfacial hydrogen doping. Thin-film transistors (TFTs) based on amorphous In–Ga–Zn–O (a-IGZO) channels present high mobility, large-area uniformity, mechanical flexibility and photosensitivity, and thus have extensive applicability in photodetectors, wearable devices, etc.![]()
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Affiliation(s)
- Xiao-Lin Wang
- State Key Laboratory of ASIC and System
- School of Microelectronics
- Fudan University
- Shanghai 200433
- China
| | - Yan Shao
- State Key Laboratory of ASIC and System
- School of Microelectronics
- Fudan University
- Shanghai 200433
- China
| | - Xiaohan Wu
- State Key Laboratory of ASIC and System
- School of Microelectronics
- Fudan University
- Shanghai 200433
- China
| | - Mei-Na Zhang
- State Key Laboratory of ASIC and System
- School of Microelectronics
- Fudan University
- Shanghai 200433
- China
| | - Lingkai Li
- State Key Laboratory of ASIC and System
- School of Microelectronics
- Fudan University
- Shanghai 200433
- China
| | - Wen-Jun Liu
- State Key Laboratory of ASIC and System
- School of Microelectronics
- Fudan University
- Shanghai 200433
- China
| | - David Wei Zhang
- State Key Laboratory of ASIC and System
- School of Microelectronics
- Fudan University
- Shanghai 200433
- China
| | - Shi-Jin Ding
- State Key Laboratory of ASIC and System
- School of Microelectronics
- Fudan University
- Shanghai 200433
- China
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24
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Highly Transparent and Surface-Plasmon-Enhanced Visible-Photodetector Based on Zinc Oxide Thin-Film Transistors with Heterojunction Structure. MATERIALS 2019; 12:ma12213639. [PMID: 31694214 PMCID: PMC6862527 DOI: 10.3390/ma12213639] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/27/2019] [Revised: 10/31/2019] [Accepted: 11/04/2019] [Indexed: 01/13/2023]
Abstract
Highly transparent zinc oxide (ZnO)-based thin-film transistors (TFTs) with gold nanoparticles (AuNPs) capable of detecting visible light were fabricated through spray pyrolysis on a fluorine-doped tin oxide substrate. The spray-deposited channel layer of ZnO had a thickness of approximately 15 nm, and the thickness exhibited a linear increase with an increasing number of sprays. Furthermore, the ZnO thin-film exhibited a markedly smoother channel layer with a significantly lower surface roughness of 1.84 nm when the substrate was 20 cm from the spray nozzle compared with when it was 10 cm away. Finally, a ZnO and Au-NP heterojunction nanohybrid structure using plasmonic energy detection as an electrical signal, constitutes an ideal combination for a visible-light photodetector. The ZnO-based TFTs convert localized surface plasmon energy into an electrical signal, thereby extending the wide band-gap of materials used for photodetectors to achieve visible-light wavelength detection. The photo-transistors demonstrate an elevated on-current with an increase of the AuNP density in the concentration of 1.26, 12.6, and 126 pM and reach values of 3.75, 5.18, and 9.79 × 10−7 A with applied gate and drain voltages. Moreover, the threshold voltage (Vth) also drifts to negative values as the AuNP density increases.
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25
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Ling C, Guo T, Zhao L, Zhang T, Hou Z, Xue Q. TiO 2@TiO 2-xHx core-shell nanoparticle film/Si heterojunction for ultrahigh detectivity and sensitivity broadband photodetector. NANOTECHNOLOGY 2019; 30:415203. [PMID: 31261145 DOI: 10.1088/1361-6528/ab2e32] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
A simple hydrogenation treatment is used to synthesize unique oxygen-deficient TiO2 with a core/shell structure (TiO2@TiO2-xHx), superior to the high H2-pressure process (under 20 bar for five days). It is demonstrated that oxygen-deficient TiO2 nanoparticle film/Si heterojunction possesses improved photoresponse performance compared to the untreated TiO2 nanoparticle film/Si heterojunction. Particularly, under 900 nm of 0.5 μW cm-2, the oxygen-deficient TiO2 nanoparticle film (TiO2@TiO2-xHx core-shell nanoparticle film)/Si heterojunction shows high responsivity (R) of 336 A W-1, prominent sensitivity (S) of 1.3 × 107 cm2 W-1, accompanied with a fast rise and decay time of 6 and 5 ms, respectively. Significantly, the detectivity (D*) of the photodetector is up to 1.17 × 1014 cm Hz1/2 W-1, which is better than that reported in metal oxide nanomaterials/Si heterojunction photodetectors, and is 4-5 orders of magnitude higher than some 2D nanosheets/Si heterojunctions of 109-1010 cm Hz1/2 W-1, indicating the excellent ability to detect weak signals. The oxygen vacancies generated in amorphous shell TiO2-xHx make the Fermi level of TiO2-x shift near the conduction band minimum and can lead to reduced dark current. The high absorption and reduced dark current of the heterojunction ensure excellent photoresponse properties of oxygen-deficient TiO2 nanoparticle film/Si heterojunction. The H-reduced oxygen-deficient amorphous shell may be an excellent candidate to enhance the photoresponse performance of metal oxide/Si heterojunction.
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Affiliation(s)
- Cuicui Ling
- State Key Laboratory of Heavy Oil Processing, China University of Petroleum, Qingdao 266580, Shandong, People's Republic of China. School of Materials Science and Engineering & College of Science, China University of Petroleum, Qingdao 266580, Shandong, People's Republic of China
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26
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Huang K, Wu J, Chen Z, Xu H, Wu Z, Tao K, Yang T, Wu Q, Zhou H, Huang B, Chen H, Chen J, Liu C. Nanostructured High-Performance Thin-Film Transistors and Phototransistors Fabricated by a High-Yield and Versatile Near-Field Nanolithography Strategy. ACS NANO 2019; 13:6618-6630. [PMID: 31082195 DOI: 10.1021/acsnano.9b00665] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Thin-film transistors (TFTs) and field-effect transistors (FETs) are basic units to build functional electronic circuits and investigate transport physics. In conventional TFTs or FETs, performance in terms of current level, on-off ratio, and the sensitivity of detection is limited by homogeneous semiconducting layers. In this paper, we develop TFTs with submicron heterostructures by using a strategy based on near-field photolithography. We use an array of total-reflective polydimethylsiloxane pyramids or trenches as a soft photomask in photolithography to induce multiple reflections and diffractions to focus the light. The textured feature enables the generation of gaps, dots, and grids at the nanoscale, with dimensions as small as sub-100 nm on substrates at the centimeter scale. We demonstrated the very high performance oxide TFTs on the nanoscale and periodic degenerately doped heterojunctions, and they yielded a nearly 20-fold increase in transconductance and apparent device mobility. The on-off ratio was higher than 109, with notably enhanced output current and clear scaling effect with channel length. We also built nanostructured wide-gap/narrow-gap heterojunctions to balance the high on-off ratio and sensitive photoresponse in a unidirectional phototransistor. This study shows the viability of programming a variety of nanoscale submicron patterns or interfaces in TFTs and FETs to significantly enlarge the scope of research on multifunctional TFTs and FETs.
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Affiliation(s)
- Kairong Huang
- State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology , Sun Yat-sen University , Guangzhou 510275 , China
| | - Jin Wu
- State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology , Sun Yat-sen University , Guangzhou 510275 , China
| | - Zihao Chen
- State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology , Sun Yat-sen University , Guangzhou 510275 , China
| | - Huihua Xu
- State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology , Sun Yat-sen University , Guangzhou 510275 , China
| | - Zixuan Wu
- State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology , Sun Yat-sen University , Guangzhou 510275 , China
| | - Kai Tao
- The Ministry of Education Key Laboratory of Micro and Nano Systems for Aerospace , Northwestern Polytechnical University , Xi'an 710072 , China
| | - Tengzhou Yang
- State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology , Sun Yat-sen University , Guangzhou 510275 , China
| | - Qian Wu
- State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology , Sun Yat-sen University , Guangzhou 510275 , China
| | - Hang Zhou
- Shenzhen Key Lab of Thin Film Transistor and Advanced Display, Peking University Shenzhen Graduate School , Peking University , Shenzhen 518055 , China
| | - Bolong Huang
- Department of Applied Biology and Chemical Technology , The Hong Kong Polytechnic University , Hung Hom, Kowloon , Hong Kong SAR
- The Hong Kong Polytechnic University Shenzhen Research Institute , Shenzhen 518000 , China
| | - Huanjun Chen
- State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology , Sun Yat-sen University , Guangzhou 510275 , China
| | - Jun Chen
- State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology , Sun Yat-sen University , Guangzhou 510275 , China
| | - Chuan Liu
- State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology , Sun Yat-sen University , Guangzhou 510275 , China
- State Key Lab of Silicon Materials , Zhejiang University , Hangzhou 310027 , China
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