Enhancing the Photovoltage of Ni/ n-Si Photoanode for Water Oxidation through a Rapid Thermal Process

Photocatalytic fuel cell based on integrated silicon nanowire arrays/zinc oxide heterojunction anode for simultaneous wastewater treatment and electricity production

Photocatalytic fuel cells (PFCs) convert organic waste into electricity, thereby providing a potential solution for remediating environmental pollution and solving energy crises. Most PFCs for energy generation applications use powder photocatalysts, which have poor mechanical stability, high internal resistance, and may detach from the substrate during reactions, leading to unstable performance. Integrated photoelectrodes can overcome the drawbacks of powder catalysts. In this study, an integrated photoanode was prepared based on a silicon nanowire arrays/zinc oxide (Si NWs/ZnO) heterojunction by combining metal-assisted chemical etching (MACE) and hydrothermal methods. The resulting photoanode was used to assemble a PFC for simultaneous electricity generation and Rhodamine (RhB) dye wastewater degradation. This PFC showed excellent cell performance under irradiation, with a short-circuit current density of 0.183 Am-2, an open-circuit voltage (OCV) of 0.72 V, and a maximum power density of 0.87 W m-2. It could also be used continuously 20 times while degrading > 90% of RhB. This performance was ascribed to the three-dimensional (3D) structure and large surface area of Si NWs, as well as the matched band structure of ZnO, which facilitated the efficient separation and transport of photogenerated carriers in Si NWs/ZnO. The integrated structure also shortened the carrier transport pathways and suppressed carrier recombination. This research provides a foundation for the development of efficient, stable, low-cost, small-scale PFCs.

Metal Silicidation in Conjunction with Dopant Segregation: A Promising Strategy for Fabricating High-Performance Silicon-Based Photoanodes

Silicon (Si)-based Schottky junction photoelectrodes have attracted considerable attention for photoelectrochemical (PEC) water splitting in recent years. To realize highly efficient Si-based Schottky junction photoelectrodes, the critical challenge is to enable the photoelectrodes to not only have a high Schottky barrier height (SBH), by which a high photovoltage can be obtained, but also ensure an efficient charge transport. Here, we propose and demonstrate a strategy to fabricate a high-performance NiSi/n-Si Schottky junction photoanode by metal silicidation in conjunction with dopant segregation (DS). The metal silicidation produces photoanodes with a high-quality NiSi/Si interface without a disordered SiO₂ layer, which ensures highly efficient charge transport, and thus a high saturated photocurrent density of 33 mA cm^-2 was attained for the photoanode. The subsequent DS gives the photoanodes a high SBH of 0.94 eV through the introduction of electric dipoles at the NiSi/n-Si interface. As a result, a high photovoltage and favorable onset potential of 1.03 V vs RHE was achieved. In addition, the strong alkali corrosion resistance of NiSi also endows the photoanode with a high stability during PEC operation in 1 M KOH. Our work provides a universal strategy to fabricate metal-silicide/Si Schottky junction photoelectrodes for high-performance PEC water splitting.

Nanoscale semiconductor/catalyst interfaces in photoelectrochemistry

Semiconductor structures (for example, films, wires, particles) used in photoelectrochemical devices are often decorated with nanoparticles that catalyse fuel-forming reactions, including water oxidation, hydrogen evolution or carbon-dioxide reduction. For high performance, the catalyst nanoparticles must form charge-carrier-selective contacts with the underlying light-absorbing semiconductor, facilitating either hole or electron transfer while inhibiting collection of the opposite carrier. Despite the key role played by such selective contacts in photoelectrochemical energy conversion and storage, the underlying nanoscale interfaces are poorly understood because direct measurement of their properties is challenging, especially under operating conditions. Using an n-Si/Ni photoanode model system and potential-sensing atomic force microscopy, we measure interfacial electron-transfer processes and map the photovoltage generated during photoelectrochemical oxygen evolution at nanoscopic semiconductor/catalyst interfaces. We discover interfaces where the selectivity of low-Schottky-barrier n-Si/Ni contacts for holes is enhanced via a nanoscale size-dependent pinch-off effect produced when surrounding high-barrier regions develop during device operation. These results thus demonstrate (1) the ability to make nanoscale operando measurements of contact properties under practical photoelectrochemical conditions and (2) a design principle to control the flow of electrons and holes across semiconductor/catalyst junctions that is broadly relevant to different photoelectrochemical devices.