Atomic Layer Deposition of Nickel Carbide from a Nickel Amidinate Precursor and Hydrogen Plasma

Molybdenum(III) Amidinate: Synthesis, Characterization, and Vapor Phase Growth of Mo-Based Materials

The synthesis, characterization, and thermogravimetric analysis of tris(N,N'-di-isopropylacetamidinate)molybdenum(III), Mo(iPr-AMD)₃, are reported. Mo(iPr-AMD)₃ is a rare example of a homoleptic mononuclear complex of molybdenum(III) and fills a longstanding gap in the literature of transition metal(III) trisamidinate complexes. Thermogravimetric analysis (TGA) reveals excellent volatilization at elevated temperatures, pointing to potential applications as a vapor phase precursor for higher temperature atomic layer deposition (ALD), or chemical vapor deposition (CVD) growth of Mo-based materials. The measured TGA temperature window was 200-314 °C for samples in the 3-20 mg range. To validate the utility of Mo(iPr-AMD)₃, we demonstrate aerosol-assisted CVD growth of MoO₃ from benzonitrile solutions of Mo(iPr-AMD)₃ at 500 °C using compressed air as the carrier gas. The resulting films are characterized by X-ray photoelectron spectroscopy, X-ray diffraction, and Raman spectroscopy. We further demonstrate the potential for ALD growth at 200 °C with a Mo(iPr-AMD)₃/Ar purge/300 W O₂ plasma/Ar purge sequence, yielding ultrathin films which retain a nitride/oxynitride component. Our results highlight the broad scope utility and potential of Mo(iPr-AMD)₃ as a stable, high-temperature precursor for both CVD and ALD processes.

A Review on the Promising Plasma-Assisted Preparation of Electrocatalysts

Electrocatalysts are becoming increasingly important for both energy conversion and environmental catalysis. Plasma technology can realize surface etching and heteroatom doping, and generate highly dispersed components and redox species to increase the exposure of the active edge sites so as to improve the surface utilization and catalytic activity. This review summarizes the recent plasma-assisted preparation methods of noble metal catalysts, non-noble metal catalysts, non-metal catalysts, and other electrochemical catalysts, with emphasis on the characteristics of plasma-assisted methods. The influence of the morphology, structure, defect, dopant, and other factors on the catalytic performance of electrocatalysts is discussed.

Atomic Layer Deposition of Nickel Using a Heteroleptic Ni Precursor with NH3 and Selective Deposition on Defects of Graphene

Atomic layer deposition (ALD) of Ni was demonstrated by introducing a novel oxygen-free heteroleptic Ni precursor, (η³-cyclohexenyl)(η⁵-cyclopentadienyl)nickel(II) [Ni(Chex)(Cp)]. For this process, non-oxygen-containing reactants (NH₃ and H₂ molecules) were used within a deposition temperature range of 320-340 °C. Typical ALD growth behavior was confirmed at 340 °C with a self-limiting growth rate of 1.1 Å/cycle. Furthermore, a postannealing process was carried out in a H₂ ambient environment to improve the quality of the as-deposited Ni film. As a result, a high-quality Ni film with a substantially low resistivity (44.9 μΩcm) was obtained, owing to the high purity and excellent crystallinity. Finally, this Ni ALD process was also performed on a graphene surface. Selective deposition of Ni on defects of graphene was confirmed by transmission electron microscopy and atomic force microscopy analyses with a low growth rate (∼0.27 Å/cycle). This unique method can be further used to fabricate two-dimensional functional materials for several potential applications.

Synthesis of Thin-Film Metal Pyrites by an Atomic Layer Deposition Approach

Late 3d transition metal disulfides (MS₂ , M=Fe, Co, Ni, Cu, Zn) can crystallize in an interesting cubic-pyrite structure, in which all the metal cations are in a low-spin electronic configuration with progressive increase of the e_g electrons for M=Fe-Zn. These metal pyrite compounds exhibit very diverse and intriguing electrical and magnetic properties, which have stimulated considerable attention for various applications, especially in cutting-edge energy conversion and storage technologies. The synthesis of the metal pyrites is certainly very important, because highly controllable, reproducible, and reliable synthesis methods are virtually essential for both fundamental materials research and practical engineering. In this Concept, a new approach of (plasma-assisted) atomic layer deposition (ALD) to synthesize the thin-film metal pyrites (FeS₂ , CoS₂ , NiS₂ ) is introduced. The ALD synthesis approach allows for atomic-precision control over film composition and thickness, excellent film uniformity and conformality, and superior process reproducibility, and therefore it is of high promise for uniformly conformal metal pyrite thin-film coatings on complex 3D structures in general. Details and implications of this ALD approach are discussed in this Concept, mainly from a conceptual perspective, and it is envisioned that, with this new ALD synthesis approach, a significant amount of new studies will be enabled on both the fundamentals, and novel applications of the metal pyrite materials.