High-Performance Flexible Single-Crystalline Silicon Nanomembrane Thin-Film Transistors with High- k Nb2O5-Bi2O3-MgO Ceramics as Gate Dielectric on a Plastic Substrate

Highly sensitive detection of multiple proteins from single cells by MoS2-FET biosensors

Single-cell analysis of proteins is critical to gain precise information regarding the mechanisms that dictate the heterogeneity in cellular phenotypes and their differential response to internal and external stimuli. However, tools that allow sensitive and easy measurement of proteins in individual cells are still limited. The emerging semiconductor-based bioelectronics may provide a new approach to overcome the challenges in this field, however its utility in single-cell protein analysis has not been explored. In this study, we investigated multiple protein detection in single cells by MoS₂ field effect transistors (MoS₂-FETs) modified with specific biological probes. First, β-actin antibody was connected to the surface of MoS₂-FETs by covalent bonds, and the fabricated device was tested using β-actin solution with concentrations from 10^-9 to 10^-3 μg/μL. Next, we examined the application of MoS₂-FET for protein analysis in complex biological samples, and the device showed electrical signal response to human embryonic kidney cell line HEK293T in a dose-dependent manner. Furthermore, we applied this method to analyze individual liver cancer MHCC-97L cells, targeting four cellular proteins, including β-actin, epidermal growth factor receptor, sirtuin-2, and glyceraldehyde-3-phosphate dehydrogenase. The devices modified with corresponding probes could identify the target proteins and showed cell number-dependent responses. As a proof of principle, we demonstrated sensitive and multiplexed detection of proteins in single cells using MoS₂-FETs. The biosensor and this detection method are cost-efficient and user-friendly with broad application prospects in biological studies and clinical diagnosis.

2D-MoS2/BMN Ceramic Hybrid Structure Flexible TFTs with Tunable Device Properties

Two-dimensional (2D) layered semiconductor materials have emerged as prospective channel materials in flexible thin-film field effect transistors (TFTs) recently because of their unique electrical and mechanical characteristics. Meanwhile, high-quality ceramics, with outstanding dielectric property and fabrication process compatible with low-cost flexible substrates, have become one of the best candidates of gate dielectric layers in flexible TFTs. In this work, 2D MoS₂ and dielectric ceramic Bi₂MgNb₂O₉ (BMN) were utilized to fabricate flexible TFTs on low-cost polyethylene terephthalate substrates. The MoS₂/BMN hybrid structure exhibited good quality by Raman, X-ray photoelectron spectroscopy, and atomic force microscopy characterizations. In addition, the flexible MoS₂/BMN TFTs indicated good performances with a small gate voltage. More importantly, with the modulation of gate voltage, the flexible TFTs surprisingly exhibited three different device types, that is, multilayer MoS₂/BMN n-type TFT (device type 1), homojunction MoS₂/BMN TFT (device type 2), and thick MoS₂/BMN p-type TFT (device type 3). In particular, with different bias conditions, the homojunction TFT showed bipolarity of transfer characteristics and forward/backward rectifications of output characteristics similar to p-n/n-n junctions. The high dielectric constant and high quality of the BMN ceramic layer enabled the gate to effectively modulate these different structures of MoS₂ channels. The operation mechanisms of these three types of flexible TFTs were investigated. Additionally, the flexible MoS₂/BMN TFTs showed good flexibility and performance stability with external strains. The results prove the great potential of integration of 2D materials, high-quality dielectric ceramics, and low-cost plastic substrates for high-performance flexible TFTs and further applications of flexible electronics.

Dielectric ceramics/TiO2/single-crystalline silicon nanomembrane heterostructure for high performance flexible thin-film transistors on plastic substrates

A dielectric ceramics/TiO2/single-crystalline silicon nanomembrane (SiNM) heterostructure is designed and fabricated for high performance flexible thin-film transistors (TFTs). Both the dielectric ceramics (Nb2O3-Bi2O3-MgO) and TiO2 are deposited by radio frequency (RF) magnetron sputtering at room temperature, which is compatible with flexible plastic substrates. And the single-crystalline SiNM is transferred and attached to the dielectric ceramics/TiO2 layers to form the heterostructure. The experimental results demonstrate that the room temperature processed heterostructure has high quality because: (1) the Nb2O3-Bi2O3-MgO/TiO2 heterostructure has a high dielectric constant (∼76.6) and low leakage current. (2) The TiO2/single-crystalline SiNM structure has a relatively low interface trap density. (3) The band gap of the Nb2O3-Bi2O3-MgO/TiO2 heterostructure is wider than TiO2, which increases the conduction band offset between Si and TiO2, lowering the leakage current. Flexible TFTs have been fabricated with the Nb2O3-Bi2O3-MgO/TiO2/SiNM heterostructure on plastic substrates and show a current on/off ratio over 104, threshold voltage of ∼1.2 V, subthreshold swing (SS) as low as ∼0.2 V dec-1, and interface trap density of ∼1012 eV-1 cm-2. The results indicate that the dielectric ceramics/TiO2/SiNM heterostructure has great potential for high performance TFTs.

Performance Enhancement for Tungsten-Doped Indium Oxide Thin Film Transistor by Hydrogen Peroxide as Cosolvent in Room-Temperature Supercritical Fluid Systems

In this study, hydrogen peroxide (H₂O₂) cosolvent, which was dissolved into supercritical-phase carbon dioxide fluid (SCCO₂), is employed to passivate excessive oxygen vacancies of the high-mobility tungsten-doped indium oxide without any essential thermal process. With the detailed material analysis, the internal physical mechanism of the cosolvent effect or the interaction between the cosolvent solution and supercritical-phase fluid is well discussed. In addition, the optimized result has been applied for the thin film transistor device fabrication. As a result, the device with SCCO₂ + H₂O₂ treatment exhibits the lowest subthreshold swing of 82 mV/dec, the lowest interface trap density of 8.76 × 10¹¹ eV^-1 cm^-2, the lowest hysteresis of 47 mV, and an excellent reliability and uniformity characteristic compared with any other control groups. Besides, an extremely high field-effect mobility of 98.91 cm²/V s can also be observed, while there is even a desirable positive shift for the threshold voltage. Notably, compared with the untreated sample, the highest on/off current ratio of 5.11 × 10⁷ can be achieved with at least four orders of magnitude enhancement by this unique treatment.