1
|
Ji YJ, Kim HI, Kang JE, Choi SY, Kim KH, Kim DS, Ellingboe AR, Kim HM, Yeom GY, Kim DW. Plasma enhanced atomic layer deposition of silicon nitride using magnetized very high frequency plasma. NANOTECHNOLOGY 2024; 35:275701. [PMID: 38522102 DOI: 10.1088/1361-6528/ad3740] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/16/2023] [Accepted: 03/24/2024] [Indexed: 03/26/2024]
Abstract
To obtain high-quality SiNxfilms applicable to an extensive range of processes, such as gate spacers in fin field-effect transistors (FinFETs), the self-aligned quadruple patterning process, etc, a study of plasma with higher plasma density and lower plasma damage is crucial in addition to study on novel precursors for SiNxplasma-enhanced atomic layer deposition (PEALD) processes. In this study, a novel magnetized PEALD process was developed for depositing high-quality SiNxfilms using di(isopropylamino)silane (DIPAS) and magnetized N2plasma at a low substrate temperature of 200 °C. The properties of the deposited SiNxfilms were analyzed and compared with those obtained by the PEALD process using a non-magnetized N2plasma source under the same conditions. The PEALD SiNxfilm, produced using an external magnetic field (ranging from 0 to 100 G) during the plasma exposure step, exhibited a higher growth rate (∼1 Å/cycle) due to the increased plasma density. Additionally, it showed lower surface roughness, higher film density, and enhanced wet etch resistance compared to films deposited using the PEALD process with non-magnetized plasmas. This improvement can be attributed to the higher ion flux and lower ion energy of the magnetized plasma. The electrical characteristics, such as interface trap density and breakdown voltage, were also enhanced when the magnetized plasma was used for the PEALD process. Furthermore, when SiNxfilms were deposited on high-aspect-ratio (30:1) trench patterns using the magnetized PEALD process, an improved step coverage of over 98% was achieved, in contrast to the conformality of SiNxdeposited using non-magnetized plasma. This enhancement is possibly a result of deeper radical penetration enabled by the magnetized plasma.
Collapse
Affiliation(s)
- You Jin Ji
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Hae In Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Ji Eun Kang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Seung Yup Choi
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Ki Hyun Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Doo San Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea
- Department of Materials Science and Engineering, The University of Texas at Dallas, 800 West Cambell Road, Richardson, TX 75080, United States of America
| | - A R Ellingboe
- Plasma Research Laboratory, School of Physical Sciences and NCPST, Dublin City University, Dublin 9, Ireland
| | - Hye Min Kim
- Division of Marine System Engineering, Korea Maritime and Ocean University, 727 Taejong-ro, Yeongdo-gu, Busan 49112, Republic of Korea
| | - Geun Young Yeom
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Dong Woo Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea
| |
Collapse
|
2
|
Ji YJ, Kim HI, Choi SY, Kang JE, Ellingboe AR, Chandra H, Lee CW, Yeom GY. Plasma Enhanced Atomic Layer Deposition of Silicon Nitride for Two Different Aminosilane Precursors Using Very High Frequency (162 MHz) Plasma Source. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37269552 DOI: 10.1021/acsami.3c02950] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Plasma enhanced atomic layer deposition (PEALD) of silicon nitride (SiNx) using very high frequency (VHF, 162 MHz) plasma source was investigated at the process temperatures of 100, 200, and 300 °C. Two aminosilane precursors having different numbers of amino ligands, bis(tert-butylamino)silane (BTBAS) and di(sec-butylamino)silane (DSBAS), were used as Si precursors. A comparative study was also conducted to verify the effect of the number of amino ligands on the properties of SiNx film. At all process temperatures, DSBAS, having one amino ligand, performed better than BTBAS in various aspects. SiNx films deposited using DSBAS had lower surface roughness, higher film density, lower wet etch rate, improved electrical characteristics, and higher growth rate than those deposited using BTBAS. With the combination of a VHF plasma source and DSBAS with one amino ligand, the SiNx films grown at 300 °C exhibited low wet etch rates (≤2 nm/min) in a dilute HF solution (100:1 of deionized water:HF) as well as low C content below the XPS detection limit. Also, excellent step coverage close to 100% on high aspect ratio (30:1) trench structures was obtained by using VHF plasma, which could provide sufficient flux of plasma species inside the trenches in conjunction with DSBAS having fewer amino ligands than BTBAS.
Collapse
Affiliation(s)
- You Jin Ji
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Hae In Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Seung Yup Choi
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Ji Eun Kang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Albert Rogers Ellingboe
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea
- Plasma Research Laboratory, School of Physical Sciences and NCPST, Dublin City University, Dublin D9, Ireland
| | - Haripin Chandra
- EMD Electronics, 1969 Palomar Oaks Way, Carlsbad, California 92011, United States
| | - Chang-Won Lee
- Merck Korea, Jangjagol-ro 82, Danwon-gu, Ansan-si, Gyeonggi-do 15601, Republic of Korea
| | - Geun Young Yeom
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea
| |
Collapse
|
3
|
Vasiliev VY. COMPOSITION, STRUCTURE, AND FUNCTIONAL PROPERTIES OF THIN SILICON NITRIDE FILMS GROWN BY ATOMIC LAYER DEPOSITION FOR MICROELECTRONIC APPLICATIONS (REVIEW OF 25 YEARS OF RESEARCH). J STRUCT CHEM+ 2022. [DOI: 10.1134/s0022476622070022] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/23/2022]
|
4
|
Silicon Nitride and Hydrogenated Silicon Nitride Thin Films: A Review of Fabrication Methods and Applications. MATERIALS 2021; 14:ma14195658. [PMID: 34640056 PMCID: PMC8510430 DOI: 10.3390/ma14195658] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/13/2021] [Revised: 09/18/2021] [Accepted: 09/22/2021] [Indexed: 11/17/2022]
Abstract
Silicon nitride (SiNx) and hydrogenated silicon nitride (SiNx:H) thin films enjoy widespread scientific interest across multiple application fields. Exceptional combination of optical, mechanical, and thermal properties allows for their utilization in several industries, from solar and semiconductor to coated glass production. The wide bandgap (~5.2 eV) of thin films allows for its optoelectronic application, while the SiNx layers could act as passivation antireflective layers or as a host matrix for silicon nano-inclusions (Si-ni) for solar cell devices. In addition, high water-impermeability of SiNx makes it a potential candidate for barrier layers of organic light emission diodes (OLEDs). This work presents a review of the state-of-the-art process techniques and applications of SiNx and SiNx:H thin films. We focus on the trends and latest achievements of various deposition processes of recent years. Historically, different kinds of chemical vapor deposition (CVD), such as plasma enhanced (PE-CVD) or hot wire (HW-CVD), as well as electron cyclotron resonance (ECR), are the most common deposition methods, while physical vapor deposition (PVD), which is primarily sputtering, is also widely used. Besides these fabrication methods, atomic layer deposition (ALD) is an emerging technology due to the fact that it is able to control the deposition at the atomic level and provide extremely thin SiNx layers. The application of these three deposition methods is compared, while special attention is paid to the effect of the fabrication method on the properties of SiNx thin films, particularly the optical, mechanical, and thermal properties.
Collapse
|
5
|
Lainer T, Fischer R, Leypold M, Holthausen M, Wunnicke O, Haas M, Stueger H. Unusually selective synthesis of chlorohydrooligosilanes. Chem Commun (Camb) 2020; 56:13812-13815. [PMID: 33079096 DOI: 10.1039/d0cc06506d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
New pathways towards molecular chlorohydrooligosilanes enable their one-pot synthesis in preparative amounts either by the selective chlorination of the corresponding perhydrosilanes with HCl/AlCl3 or by the partial hydrogenation of perchlorooligosilanes with substoichiometric amounts of iBu2AlH. The unexpected selective formation of Cl3Si-substituted species in the partial hydrogenation reactions could be related to mechanistic aspects.
Collapse
Affiliation(s)
- Thomas Lainer
- Institute of Inorganic Chemistry, Technische Universität Graz, Stremayrgasse 9/IV, Graz 8010, Austria.
| | | | | | | | | | | | | |
Collapse
|
6
|
Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source. MATERIALS 2020; 13:ma13153387. [PMID: 32751836 PMCID: PMC7436040 DOI: 10.3390/ma13153387] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/20/2020] [Revised: 07/21/2020] [Accepted: 07/28/2020] [Indexed: 11/17/2022]
Abstract
Aluminum nitride (AlN) thin films were grown using thermal atomic layer deposition in the temperature range of 175–350 °C. The thin films were deposited using trimethyl aluminum (TMA) and hydrazine (N2H4) as a metal precursor and nitrogen source, respectively. Highly reactive N2H4, compared to its conventionally used counterpart, ammonia (NH3), provides a higher growth per cycle (GPC), which is approximately 2.3 times higher at a deposition temperature of 300 °C and, also exhibits a low impurity concentration in as-deposited films. Low temperature AlN films deposited at 225 °C with a capping layer had an Al to N composition ratio of 1:1.1, a close to ideal composition ratio, with a low oxygen content (7.5%) while exhibiting a GPC of 0.16 nm/cycle. We suggest that N2H4 as a replacement for NH3 is a good alternative due to its stringent thermal budget.
Collapse
|
7
|
Kim HS, Meng X, Kim SJ, Lucero AT, Cheng L, Byun YC, Lee JS, Hwang SM, Kondusamy ALN, Wallace RM, Goodman G, Wan AS, Telgenhoff M, Hwang BK, Kim J. Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper. ACS APPLIED MATERIALS & INTERFACES 2018; 10:44825-44833. [PMID: 30485061 DOI: 10.1021/acsami.8b15291] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Correlations between physical properties linking film quality with wet etch rate (WER), one of the leading figures of merit, in plasma-enhanced atomic layer deposition (PEALD) grown silicon nitride (SiN x) films remain largely unresearched. Achieving a low WER of a SiN x film is especially significant in its use as an etch stopper for technology beyond 7 nm node semiconductor processing. Herein, we explore the correlation between the hydrogen concentration, hydrogen bonding states, bulk film density, residual impurity concentration, and the WERs of PEALD SiN x using Fourier transform infrared spectrometry, X-ray reflectivity, and spectroscopic ellipsometry, etc. PEALD SiN x films for this study were deposited using hexachlorodisilane and hollow cathode plasma source under a range of process temperatures (270-360 °C) and plasma gas compositions (N2/NH3 or Ar/NH3) to understand the influence of hydrogen concentration, hydrogen bonding states, bulk film density, and residual impurity concentration on the WER. Varying hydrogen concentration and differences in the hydrogen bonding states resulted in different bulk film densities and, accordingly, a variation in WER. We observe a linear relationship between hydrogen bonding concentration and WER as well as a reciprocal relationship between bulk film density and WER. Analogous to the PECVD SiN x processes, a reduction in hydrogen bonding concentration arises from either (1) thermal activation or (2) plasma excited species. However, unlike the case with silane (SiH4)-based PECVD SiN x, PEALD SiN x WERs are affected by residual impurities of Si precursors (i.e., chlorine impurity). Thus, possible wet etching mechanisms in HF in which the WER is affected by hydrogen bonding states or residual impurities are proposed. The shifts of amine basicity in SiN x due to different hydrogen bonding states and the changes in Si electrophilicity due to Cl impurity content are suggested as the main mechanisms that influence WER in the PEALD processes.
Collapse
Affiliation(s)
- Harrison Sejoon Kim
- Department of Materials Science and Engineering , The University of Texas at Dallas , 800 West Campbell Road , Richardson , Texas 75080 , United States
| | - Xin Meng
- Department of Electrical Engineering , The University of Texas at Dallas , 800 West Campbell Road , Richardson , Texas 75080 , United States
| | - Si Joon Kim
- Department of Electrical and Electronics Engineering , Kangwon National University , 1 Gangwondaehakgil , Chuncheon-si , Gangwon-do 24341 , Republic of Korea
| | - Antonio T Lucero
- Department of Materials Science and Engineering , The University of Texas at Dallas , 800 West Campbell Road , Richardson , Texas 75080 , United States
| | - Lanxia Cheng
- Department of Materials Science and Engineering , The University of Texas at Dallas , 800 West Campbell Road , Richardson , Texas 75080 , United States
| | - Young-Chul Byun
- Department of Materials Science and Engineering , The University of Texas at Dallas , 800 West Campbell Road , Richardson , Texas 75080 , United States
| | - Joy S Lee
- Department of Materials Science and Engineering , The University of Texas at Dallas , 800 West Campbell Road , Richardson , Texas 75080 , United States
| | - Su Min Hwang
- Department of Materials Science and Engineering , The University of Texas at Dallas , 800 West Campbell Road , Richardson , Texas 75080 , United States
| | - Aswin L N Kondusamy
- Department of Materials Science and Engineering , The University of Texas at Dallas , 800 West Campbell Road , Richardson , Texas 75080 , United States
| | - Robert M Wallace
- Department of Materials Science and Engineering , The University of Texas at Dallas , 800 West Campbell Road , Richardson , Texas 75080 , United States
| | - Gary Goodman
- Evans Analytical Group , 104 Windsor Center Drive , East Windsor , New Jersey 08520 , United States
| | - Alan S Wan
- Evans Analytical Group , 104 Windsor Center Drive , East Windsor , New Jersey 08520 , United States
| | - Michael Telgenhoff
- Dow Chemical , 2200 West Salzburg Road , Midland , Michigan 48686 , United States
| | - Byung Keun Hwang
- Dow Chemical , 2200 West Salzburg Road , Midland , Michigan 48686 , United States
| | - Jiyoung Kim
- Department of Materials Science and Engineering , The University of Texas at Dallas , 800 West Campbell Road , Richardson , Texas 75080 , United States
- Department of Electrical Engineering , The University of Texas at Dallas , 800 West Campbell Road , Richardson , Texas 75080 , United States
| |
Collapse
|