Field-Effect Transistors Based on Networks of Highly Aligned, Chemically Synthesized N = 7 Armchair Graphene Nanoribbons

Impact of valley degeneracy on the thermoelectric properties of zig-zag graphene nanoribbons with staggered sublattice potentials and transverse electric fields

This study investigates the band inversion of flat bands in zig-zag graphene nanoribbons (ZGNRs) using a tight-binding model. The band inversion results from symmetry breaking in the transverse direction, achievable through deposition on specific substrates such as separated silicon carbide or hexagonal boron nitride sheets. Upon band inversion, ZGNRs exhibit electronic structures characterized by valley degeneracy and band gap properties, which can be modulated by transverse electric fields. To explore the impact of this level degeneracy on thermoelectric properties, we employ Green's function techniques to calculate thermoelectric quantities in ZGNR segments with staggered sublattice potentials and transverse electric fields. Two carrier transport scenarios are considered: the chemical potential is positioned above and below the highest occupied molecular orbital. We analyze thermionic-assisted transport (TAT) and direct ballistic transport (DBT). Level degeneracy enhances the electric power factors of ZGNRs by increasing electrical conductance, while the Seebeck coefficient remains robust in the TAT scenario. Conversely, in DBT, the enhancement of the power factor primarily stems from improvements in the Seebeck coefficient at elevated temperatures.

On-surface synthesis of porous graphene nanoribbons mediated by phenyl migration

Advancements in the on-surface synthesis of atomically precise graphene nanostructures are propelled by the introduction of innovative precursor designs and reaction types. Until now, the latter has been confined to cross-coupling and cyclization reactions that involve the cleavage of specific atoms or groups. In this article, we elucidate how the migration of phenyl substituents attached to graphene nanoribbons can be harnessed to generate arrays of [18]-annulene pores at the edges of the nanostructures. This sequential pathway is revealed through a comprehensive study employing bond-resolved scanning tunneling microscopy and ab-initio computational techniques. The yield of pore formation is maximized by anchoring the graphene nanoribbons at steps of vicinal surfaces, underscoring the potential of these substrates to guide reaction paths. Our study introduces a new reaction to the on-surface synthesis toolbox along with a sequential route, altogether enabling the extension of this strategy towards the formation of other porous nanostructures.

Bottom-up Synthesis and Characterization of Porous 12-Atom-Wide Armchair Graphene Nanoribbons

Although several porous carbon/graphene nanoribbons (GNRs) have been prepared, a direct comparison of the electronic properties between a nonporous GNR and its periodically perforated counterpart is still missing. Here, we report the synthesis of porous 12-atom-wide armchair-edged GNRs from a bromoarene precursor on a Au(111) surface via hierarchical Ullmann and dehydrogenative coupling. The selective formation of porous 12-GNRs was achieved through thermodynamic and kinetic reaction control combined with tailored precursor design. The structure and electronic properties of the porous 12-GNR were elucidated by scanning tunneling microscopy/spectroscopy and density functional theory calculations, revealing that the pores induce a 2.17 eV band gap increase compared to the nonporous 12-AGNR on the same surface.

Atomically Precise Graphene Nanoribbon Transistors with Long-Term Stability and Reliability

Atomically precise graphene nanoribbons (GNRs) synthesized from the bottom-up exhibit promising electronic properties for high-performance field-effect transistors (FETs). The feasibility of fabricating FETs with GNRs (GNRFETs) has been demonstrated, with ongoing efforts aimed at further improving their performance. However, their long-term stability and reliability remain unexplored, which is as important as their performance for practical applications. In this work, we fabricated short-channel FETs with nine-atom-wide armchair GNRs (9-AGNRFETs). We revealed that the on-state (ION) current performance of the 9-AGNRFETs deteriorates significantly over consecutive full transistor on and off logic cycles, which has neither been demonstrated nor previously considered. To address this issue, we deposited a thin ∼10 nm thick atomic layer deposition (ALD) layer of aluminum oxide (Al2O3) directly on these devices. The integrity, compatibility, electrical performance, stability, and reliability, of the GNRFETs before and/or after Al2O3 deposition were comprehensively studied. The results indicate that the observed decline in electrical device performance is most likely due to the degradation of contact resistance over multiple measurement cycles. We successfully demonstrated that the devices with the Al2O3 layer operate well up to several thousand continuous full cycles without any degradation. Our study offers valuable insights into the stability and reliability of GNR transistors, which could facilitate their large-scale integration into practical applications.

On-surface synthesis and characterization of teranthene and hexanthene: ultrashort graphene nanoribbons with mixed armchair and zigzag edges

Graphene nanoribbons (GNRs) exhibit a broad range of physicochemical properties that critically depend on their width and edge topology. GNRs with armchair edges (AGNRs) are usually more stable than their counterparts with zigzag edges (ZGNRs) where the low-energy spin-polarized edge states render the ribbons prone to being altered by undesired chemical reactions. On the other hand, such edge-localized states make ZGNRs highly appealing for applications in spintronic and quantum technologies. For GNRs fabricated via on-surface synthesis under ultrahigh vacuum conditions on metal substrates, the expected reactivity of zigzag edges is a serious concern in view of substrate transfer and device integration under ambient conditions, but corresponding investigations are scarce. Using 10-bromo-9,9':10',9''-teranthracene as a precursor, we have thus synthesized hexanthene (HA) and teranthene (TA) as model compounds for ultrashort GNRs with mixed armchair and zigzag edges, characterized their chemical and electronic structure by means of scanning probe methods, and studied their chemical reactivity upon air exposure by Raman spectroscopy. We present a detailed identification of molecular orbitals and vibrational modes, assign their origin to armchair or zigzag edges, and discuss the chemical reactivity of these edges based on characteristic Raman spectral features.

Step-Assisted On-Surface Synthesis of Graphene Nanoribbons Embedded with Periodic Divacancies

The bottom-up approach through on-surface synthesis of porous graphene nanoribbons (GNRs) presents a controllable manner for implanting periodic nanostructures to tune the electronic properties of GNRs in addition to bandgap engineering by width and edge configurations. However, owing to the existing steric hindrance in small pores like divacancies, it is still difficult to embed periodic divacancies with a nonplanar configuration into GNRs. Here, we demonstrate the on-surface synthesis of atomically precise eight-carbon-wide armchair GNRs embedded with periodic divacancies (DV8-aGNRs) by utilizing the monatomic step edges on the Au(111) surface. From a single molecular precursor correspondingly following a trans- and cis-coupling, the DV8-aGNR and another porous nanographene are respectively formed at step edges and on terraces at 720 and 570 K. Combining scanning tunneling microscopy/spectroscopy, atomic force microscopy, and first-principles calculations, we determine the out-of-plane conformation, wide bandgap (∼3.36 eV), and wiggly shaped frontier orbitals of the DV8-aGNR. Nudged elastic band calculations further quantitatively reveal that the additional steric hindrance effect in the cyclodehydrogenative reactions has a higher barrier of 1.3 eV than that in the planar porous nanographene, which also unveils the important role played by the monatomic Au step and adatoms in reducing the energy barriers and enhancing the thermodynamic preference of the oxidative cyclodehydrogenation. Our results provide the first case of GNRs containing periodic pores as small as divacancies with a nonplanar configuration and demonstrate the strategy by utilizing the chemical heterogeneity of a substrate to promote the formation of novel carbon nanomaterials.

Band Structure and Energy Level Alignment of Chiral Graphene Nanoribbons on Silver Surfaces

Chiral graphene nanoribbons are extremely interesting structures due to their narrow band gaps and potential development of spin-polarized edge states. Here, we study their band structure on low work function silver surfaces. The use of a curved Ag single crystal provides, within the same sample, regions of disparate step structure and step density. Whereas the former leads to distinct azimuthal growth orientations of the graphene nanoribbons atop, the latter modulates the substrate's work function and thereby the interface energy level alignment. In turn, we disclose the associated charge transfer from the substrate to the ribbon and assess its effect on the nanoribbon's properties and the edge state magnetization.

Photoluminescent Semiconducting Graphene Nanoribbons via Longitudinally Unzipping Single-Walled Carbon Nanotubes

The lack of a sizeable band gap has so far prevented graphene from building effective electronic and optoelectronic devices despite its numerous exceptional properties. Intensive theoretical research reveals that a band gap larger than 1 eV can only be achieved in sub-3 nm wide graphene nanoribbons (GNRs), but real fabrication of such ultranarrow GNRs still remains a critical challenge. Herein, we demonstrate an approach for the synthesis of ultranarrow and photoluminescent semiconducting GNRs by longitudinally unzipping single-walled carbon nanotubes. Atomic force microscopy reveals the unzipping process, and the resulting 2.2 nm wide GNRs are found to emit strong and sharp photoluminescence at ∼685 nm, demonstrating a very desirable semiconducting nature. This band gap of 1.8 eV is further confirmed by follow-up photoconductivity measurements, where a considerable photocurrent is generated, as the excitation wavelength becomes shorter than 700 nm. More importantly, our fabricated GNR field-effect transistors (FETs), by employing the hexagonal boron nitride-encapsulated heterostructure to achieve edge-bonded contacts, demonstrate a high current on/off ratio beyond 105 and carrier mobility of 840 cm2/V s, approaching the theoretical scattering limit in semiconducting GNRs at room temperature. Especially, highly aligned GNR bundles with lengths up to a millimeter are also achieved by prepatterning a template, and the fabricated GNR bundle FETs show a high on/off ratio reaching 105, well-defined saturation currents, and strong light-emitting properties. Therefore, GNRs produced by this method open a door for promising applications in graphene-based electronics and optoelectronics.

Novel electrical properties and applications in kaleidoscopic graphene nanoribbons

As one of the representatives of nano-graphene materials, graphene nanoribbons (GNRs) have more novel electrical properties, highly adjustable electronic properties, and optoelectronic properties than graphene due to their diverse geometric structures and atomic precision configurations. The electrical properties and band gaps of GNRs depend on their width, length, boundary configuration and other elemental doping, etc. With the improvement of the preparation technology and level of GNRs with atomic precision, increasing number of GNRs with different configurations are being prepared. They all show novel electrical properties and high tunability, which provides a broad prospect for the application of GNRs in the field of microelectronics. Here, we summarize the latest GNR-based achievements in recent years and summarize the latest electrical properties and potential applications of GNRs.

Atomically precise graphene nanoribbons: interplay of structural and electronic properties

Graphene nanoribbons hold great promise for future applications in nanoelectronic devices, as they may combine the excellent electronic properties of graphene with the opening of an electronic band gap - not present in graphene but required for transistor applications. With a two-step on-surface synthesis process, graphene nanoribbons can be fabricated with atomic precision, allowing precise control over width and edge structure. Meanwhile, a decade of research has resulted in a plethora of graphene nanoribbons having various structural and electronic properties. This article reviews not only the on-surface synthesis of atomically precise graphene nanoribbons but also how their electronic properties are ultimately linked to their structure. Current knowledge and considerations with respect to precursor design, which eventually determines the final (electronic) structure, are summarized. Special attention is dedicated to the electronic properties of graphene nanoribbons, also in dependence on their width and edge structure. It is exactly this possibility of precisely changing their properties by fine-tuning the precursor design - offering tunability over a wide range - which has generated this vast research interest, also in view of future applications. Thus, selected device prototypes are presented as well.

Materials Science Challenges to Graphene Nanoribbon Electronics

Graphene nanoribbons (GNRs) have recently emerged as promising candidates for channel materials in future nanoelectronic devices due to their exceptional electronic, thermal, and mechanical properties and chemical inertness. However, the adoption of GNRs in commercial technologies is currently hampered by materials science and integration challenges pertaining to synthesis and devices. In this Review, we present an overview of the current status of challenges, recent breakthroughs toward overcoming these challenges, and possible future directions for the field of GNR electronics. We motivate the need for exploration of scalable synthetic techniques that yield atomically precise, placed, registered, and oriented GNRs on CMOS-compatible substrates and stimulate ideas for contact and dielectric engineering to realize experimental performance close to theoretically predicted metrics. We also briefly discuss unconventional device architectures that could be experimentally investigated to harness the maximum potential of GNRs in future spintronic and quantum information technologies.

Transfer-Free Synthesis of Atomically Precise Graphene Nanoribbons on Insulating Substrates

The rational bottom-up synthesis of graphene nanoribbons (GNRs) provides atomically precise control of widths and edges that give rise to a wide range of electronic properties promising for electronic devices such as field-effect transistors (FETs). Since the bottom-up synthesis commonly takes place on catalytic metallic surfaces, the integration of GNRs into such devices requires their transfer onto insulating substrates, which remains one of the bottlenecks in the development of GNR-based electronics. Herein, we report on a method for the transfer-free placement of GNRs on insulators. This involves growing GNRs on a gold film deposited onto an insulating layer followed by gentle wet etching of the gold, which leaves the nanoribbons to settle in place on the underlying insulating substrate. Scanning tunneling microscopy and Raman spectroscopy confirm that atomically precise GNRs of high density uniformly grow on the gold films deposited onto SiO₂/Si substrates and remain structurally intact after the etching process. We have also demonstrated transfer-free fabrication of ultrashort channel GNR FETs using this process. A very important aspect of the present work is that the method can scale up well to 12 in. wafers, which is extremely difficult for previous techniques. Our work here thus represents an important step toward large-scale integration of GNRs into electronic devices.

Three-terminal spin/charge current router

Topological insulator materials have wide applications in electronic and spintronic devices by utilizing the protected edge states. In this paper, based on these topological edge states and energy gaps, we propose some types of spin/charge current router in a three-terminal system consisting of silicene-like nanoribbons (SiNRs). The current is well controlled by the helical edge states of zigzag SiNRs (ZSiNRs) and external fields. Using the tight-binding model and non-equilibrium Green's function theory, we investigate three types of such router. The first type is a spin current shunter which separates the spin-up and spin-down current into different leads. The second type is a spin filter which separates the spin-polarized electrons into one of those leads. The last type is a charge current switcher which switches the charge current from one lead to the other lead. The local current distribution is calculated for the specific electron path. We find that the small Rashba does not destroy the filtering properties of the system. Besides, as an example, we employ the Landauer-Büttiker formula to obtain the current-voltage curves of the first type router and investigate the transmittance reciprocity relations in such a three-terminal system. We believe these proposed spin/charge current routers, which can separate the specific current into the expected lead, have potential applications in the future spintronics designs.

Modified Engineering of Graphene Nanoribbons Prepared via On-Surface Synthesis

1D graphene nanoribbons (GNRs) have a bright future in the fabrication of next-generation nanodevices because of their nontrivial electronic properties and tunable bandgaps. To promote the application of GNRs, preparation strategies of miscellaneous GNRs have to be developed. The GNRs prepared by top-down approaches are accompanied by uncontrolled edges and structures. In order to overcome the difficulties, bottom-up methods are widely used in the growth of various GNRs due to controllability of GNRs' features. Among those bottom-up methods, the on-surface synthesis is a promising approach to prepare GNRs with distinct widths, edge/backbone structures, and so forth. Therefore, modified engineering of the GNRs prepared via on-surface synthesis is of great significance in controllable preparation of GNRs and their potential applications. In the past decade, there have been a lot of reports on controllable preparation of GNRs using on-surface synthesis approach. Herein, the advances of GNRs grown via on-surface growth strategy are described. Several growth parameters, the latest advances in the modification of the GNR structure and width, the GNR doping/co-doping with heteroatoms, a variety of GNR heterojunctions, and the device application of GNRs are reviewed. Finally, the opportunities and challenges are discussed.

Controlling a Chemical Coupling Reaction on a Surface: Tools and Strategies for On-Surface Synthesis

On-surface synthesis is appearing as an extremely promising research field aimed at creating new organic materials. A large number of chemical reactions have been successfully demonstrated to take place directly on surfaces through unusual reaction mechanisms. In some cases the reaction conditions can be properly tuned to steer the formation of the reaction products. It is thus possible to control the initiation step of the reaction and its degree of advancement (the kinetics, the reaction yield); the nature of the reaction products (selectivity control, particularly in the case of competing processes); as well as the structure, position, and orientation of the covalent compounds, or the quality of the as-formed networks in terms of order and extension. The aim of our review is thus to provide an extensive description of all tools and strategies reported to date and to put them into perspective. We specifically define the different approaches available and group them into a few general categories. In the last part, we demonstrate the effective maturation of the on-surface synthesis field by reporting systems that are getting closer to application-relevant levels thanks to the use of advanced control strategies.

Alignment of semiconducting graphene nanoribbons on vicinal Ge(001)

Chemical vapor deposition of CH4 on Ge(001) can enable anisotropic growth of narrow, semiconducting graphene nanoribbons with predominately smooth armchair edges and high-performance charge transport properties. However, such nanoribbons are not aligned in one direction but instead grow perpendicularly, which is not optimal for integration into high-performance electronics. Here, it is demonstrated that vicinal Ge(001) substrates can be used to synthesize armchair nanoribbons, of which ∼90% are aligned within ±1.5° perpendicular to the miscut. When the growth rate is slow, graphene crystals evolve as nanoribbons. However, as the growth rate increases, the uphill and downhill crystal edges evolve asymmetrically. This asymmetry is consistent with stronger binding between the downhill edge and the Ge surface, for example due to different edge termination as shown by density functional theory calculations. By tailoring growth rate and time, nanoribbons with sub-10 nm widths that exhibit excellent charge transport characteristics, including simultaneous high on-state conductance of 8.0 μS and a high on/off conductance ratio of 570 in field-effect transistors, are achieved. Large-area alignment of semiconducting ribbons with promising charge transport properties is an important step towards understanding the anisotropic nanoribbon growth and integrating these materials into scalable, future semiconductor technologies.

Observation of Room-Temperature Photoluminescence Blinking in Armchair-Edge Graphene Nanoribbons

By enhancing the photoluminescence from aligned seven-atom wide armchair-edge graphene nanoribbons using plasmonic nanoantennas, we are able to observe blinking of the emission. The on- and off-times of the blinking follow power law statistics. In time-resolved spectra, we observe spectral diffusion. These findings together are a strong indication of the emission originating from a single quantum emitter. The room temperature photoluminescence displays a narrow spectral width of less than 50 meV, which is significantly smaller than the previously observed ensemble line width of 0.8 eV. From spectral time traces, we identify three optical transitions, which are energetically situated below the lowest bulk excitonic state E₁₁ of the nanoribbons. We attribute the emission to transitions involving Tamm states localized at the end of the nanoribbon. The photoluminescence from a single ribbon is strongly enhanced when its end is in the antenna hot spot resulting in the observed single molecule characteristics of the emission. Our findings illustrate the essential role of the end termination of graphene nanoribbons in light emission and allow us to construct a model for photoluminescence from nanoribbons.

Interpolymer Self-Assembly of Bottom-up Graphene Nanoribbons Fabricated from Fluorinated Precursors

Interpolymer self-assembly of bottom-up graphene nanoribbons (GNRs) has been realized by using fluorinated anthracene trimer precursors (HFH-DBTA) deposited onto heated Au(111) substrate. Whereas polymers derived from conventional precursor [10,10'-dibromo-9,9'-bianthryl (DBBA)] are adsorbed on Au(111) without apparent close packing, poly-HFH polymers derived from HFH-DBTA are densely self-assembled and require a long annealing time for cyclo-dehydrogenation because of the steric hindrance. First-principles calculations based on density functional theory revealed that the partially fluorinated edges of HFH-DBTA make molecular-substrate interaction weaker than that of DBBA, accelerate desorption, and leave islands of accumulated and locally aligned polymers. The partially fluorinated precursors also induce templating effects in interpolymer stacking because of H-F hydrogen bonding and F-F repulsion. The statistical analysis revealed that 84% of GNRs is parallel to the adjacent GNRs in the case of HFH-DBTA precursors. Field-effect transistors (FETs) were fabricated using such locally aligned multiple GNRs as channels. It has been found that on average, the on-current of the FETs is three times larger than that of FETs using less-aligned GNR channels made from the conventional DBBA precursors.

Boron-Doped Graphene Nanoribbons: Electronic Structure and Raman Fingerprint

We investigate the electronic and vibrational properties of bottom-up synthesized aligned armchair graphene nanoribbons of N = 7 carbon atoms width periodically doped by substitutional boron atoms (B-7AGNRs). Using angle-resolved photoemission spectroscopy and density functional theory calculations, we find that the dopant-derived valence and conduction band states are notably hybridized with electronic states of Au substrate and spread in energy. The interaction with the substrate leaves the bands with pure carbon character rather unperturbed. This results in an identical effective mass of ≈0.2 m₀ for the next-highest valence band compared with pristine 7AGNRs. We probe the phonons of B-7AGNRs by ultrahigh-vacuum (UHV) Raman spectroscopy and reveal the existence of characteristic splitting and red shifts in Raman modes due to the presence of substitutional boron atoms. Comparing the Raman spectra for three visible lasers (red, green, and blue), we find that interaction with gold suppresses the Raman signal from B-7AGNRs and the energy of the green laser (2.33 eV) is closer to the resonant E₂₂ transition. The hybridized electronic structure of the B-7AGNR-Au interface is expected to improve electrical characteristics of contacts between graphene nanoribbon and Au. The Raman fingerprint allows the easy identification of B-7AGNRs, which is particularly useful for device fabrication.