Engineering the Kinetics of Directed Self-Assembly of Block Copolymers toward Fast and Defect-Free Assembly

Revealing the 3D Structure of Block Copolymers with Electron Microscopy: Current Status and Future Directions

Block copolymers (BCPs) are considered model systems for understanding and utilizing self-assembly in soft matter. Their tunable nanometric structure and composition enable comprehensive studies of self-assembly processes as well as make them relevant materials in diverse applications. A key step in developing and controlling BCP nanostructures is a full understanding of their three-dimensional (3D) structure and how this structure is affected by the BCP chemistry, confinement, boundary conditions, and the self-assembly evolution and dynamics. Electron microscopy (EM) is a leading method in BCP 3D characterization owing to its high resolution in imaging nanosized structures. Here we discuss the two main 3D EM methods: namely, transmission EM tomography and slice and view scanning EM tomography. We present each method's principles, examine their strengths and weaknesses, and discuss ways researchers have devised to overcome some of the challenges in BCP 3D characterization with EM- from specimen preparation to imaging radiation-sensitive materials. Importantly, we review current and new cutting-edge EM methods such as direct electron detectors, energy dispersive X-ray spectroscopy of soft matter, high temporal rate imaging, and single-particle analysis that have great potential for expanding the BCP understanding through EM in the future.

Sequential Brush Grafting for Chemically and Dimensionally Tolerant Directed Self-Assembly of Block Copolymers

We report a method for the directed self-assembly (DSA) of block copolymers (BCPs) in which a first BCP film deploys homopolymer brushes, or "inks", that sequentially graft onto the substrate's surface via the interpenetration of polymer molecules during the thermal annealing of the polymer film on top of existing polymer brushes. By selecting polymer "inks" with the desired chemistry and appropriate relative molecular weights, it is possible to use brush interpenetration as a powerful technique to generate self-registered chemical contrast patterns at the same frequency as that of the domains of the BCP. The result is a process with a higher tolerance to dimensional and chemical imperfections in the guiding patterns, which we showcase by implementing DSA using homopolymer brushes for the guiding features as opposed to more robust cross-linkable mats. We find that the use of "inks" does not compromise the line width roughness, and the quality of the DSA as a lithographic mask is verified by implementing a robust "dry lift-off" pattern transfer.

Chemical Composition and Strain at Interfaces between Different Morphologies in Block Copolymer Thin Films

Transitional composition between two thin-film morphologies of the block copolymer, polystyrene-block-poly(tert-butyl acrylate) (PS-b-PtBuA), was investigated using near-field infrared spectroscopy and atomic force microscopy mechanical measurements. These techniques allowed block identification with nanoscale spatial resolution and elucidated the material's sub-surface composition. PS was found to form coronae around the PtBuA block in spherical valleys on flat areas of the film, and coronae of PtBuA surrounding the PS lamellae were observed at the edge of the polymer film, where parallel lamellae are formed. Furthermore, we found that the peak position and width varied by location, which may be a result of block composition, chain tension, or substrate interaction.

Cyclic Plasma Halogenation of Amorphous Carbon for Defect-Free Area-Selective Atomic Layer Deposition of Titanium Oxide

As critical dimensions in integrated circuits continue to shrink, the lithography-based alignment of adjacent patterned layers becomes more challenging. Area-selective atomic layer deposition (ALD) allows circumventing the alignment issue by exploiting the chemical contrast of the exposed surfaces. In this work, we investigate the selective deposition of TiO₂ by plasma halogenation of amorphous carbon (a-C:H) acting as a growth-inhibiting layer. On a-C:H, a CF₄ or Cl₂ plasma forms a thin halogenated layer that suppresses the growth of TiO₂, while nucleation remains unaffected on plasma-treated SiO₂. The same halogenating plasmas preferentially etch TiO₂ nuclei over films and thus enable the restoration of the halogenated surface of amorphous carbon. By embedding the intermediate plasma treatments in the ALD TiO₂ sequence, an 8 nm TiO₂ layer could be deposited with a selectivity of 0.998. The application of the cyclic process on a 60 nm half-pitch line pattern resulted in the defect-free deposition of TiO₂ at the bottom of the trenches. Cyclic fluorination demonstrated better growth inhibition compared to chlorination due to more efficient defect removal and retention of the favorable surface composition during plasma exposure. While exploring the TiO₂ nucleation defects at the limit of detection for conventional elemental analysis techniques (<1 × 10¹⁴ at/cm²), we additionally highlight the value of imaging techniques such as atomic force microscopy for understanding defect formation mechanisms and accurately assessing growth selectivity.

Solvent Vapor Annealing, Defect Analysis, and Optimization of Self-Assembly of Block Copolymers Using Machine Learning Approaches

Self-assembly of block copolymers (BCPs) is an alternative patterning technique that promises high resolution and density multiplication with lower costs. The defectivity of the resulting nanopatterns remains too high for many applications in microelectronics and is exacerbated by small variations of processing parameters, such as film thickness, and fluctuations of solvent vapor pressure and temperature, among others. In this work, a solvent vapor annealing (SVA) flow-controlled system is combined with design of experiments (DOE) and machine learning (ML) approaches. The SVA flow-controlled system enables precise optimization of the conditions of self-assembly of the high Flory-Huggins interaction parameter (χ) hexagonal dot-array forming BCP, poly(styrene-b-dimethylsiloxane) (PS-b-PDMS). The defects within the resulting patterns at various length scales are then characterized and quantified. The results show that the defectivity of the resulting nanopatterned surfaces is highly dependent upon very small variations of the initial film thicknesses of the BCP, as well as the degree of swelling under the SVA conditions. These parameters also significantly contribute to the quality of the resulting pattern with respect to grain coarsening, as well as the formation of different macroscale phases (single and double layers and wetting layers). The results of qualitative and quantitative defect analyses are then compiled into a single figure of merit (FOM) and are mapped across the experimental parameter space using ML approaches, which enable the identification of the narrow region of optimum conditions for SVA for a given BCP. The result of these analyses is a faster and less resource intensive route toward the production of low-defectivity BCP dot arrays via rational determination of the ideal combination of processing factors. The DOE and machine learning-enabled approach is generalizable to the scale-up of self-assembly-based nanopatterning for applications in electronic microfabrication.

Fabrication of Graphoepitaxial Gate-All-Around Si Circuitry Patterned Nanowire Arrays Using Block Copolymer Assisted Hard Mask Approach

We demonstrate the fabrication of sub-20 nm gate-all-around silicon (Si) nanowire field effect transistor structures using self-assembly. To create nanopatterned Si feature arrays, a block-copolymer-assisted hard mask approach was utilized using a topographically patterned substrate with well-defined Si₃N₄ features for graphoepitaxially alignment of the self-assembled patterns. Microphase-separated long-range ordered polystyrene-b-poly(ethylene oxide) (PS-b-PEO) block-copolymer-derived dot and line nanopatterns were achieved by a thermo-solvent approach within the substrate topographically defined channels of various widths and lengths. Solvent annealing parameters (temperature, annealing time, etc.) were varied to achieve the desired patterns. The BCP structures were modified by anhydrous ethanol to facilitate insertion of iron oxide features within the graphoepitaxial trenches that maintained the parent BCP arrangements. Vertical and horizontal ordered Si nanowire structures within trenches were fabricated using the iron oxide features as hard masks in an inductively coupled plasma (ICP) etch process. Cross-sectional micrographs depict wires of persistent width and flat sidewalls indicating the effectiveness of the mask. The aspect ratios could be varied by varying etch times. The sharp boundaries between the transistor components was also examined through the elemental mapping.

Understanding Kinetics of Defect Annihilation in Chemoepitaxy-Directed Self-Assembly

Directed self-assembly (DSA) of block copolymers (BCP) has attracted considerable interest from the semiconductor industry because it can achieve semiconductor-relevant structures with a relatively simple process and low cost. However, the self-assembling structures can become kinetically trapped into defective states, which greatly impedes the implementation of DSA in high-volume manufacturing. Understanding the kinetics of defect annihilation is crucial to optimizing the process and eventually eliminating defects in DSA. Such kinetic experiments, however, are not commonly available in academic laboratories. To address this challenge, we perform a kinetic study of chemoepitaxy DSA in a 300 mm wafer fab, where the complete defectivity information at various annealing conditions can be readily captured. Through extensive statistical analysis, we reveal the statistical model of defect annihilation in DSA for the first time. The annihilation kinetics can be well described by a power law model, indicating that all dislocations can be removed by sufficiently long annealing time. We further develop image analysis algorithms to analyze the distribution of dislocation size and configurations and discover that the distribution stays relatively constant over time. The defect distribution is determined by the role of the guiding stripe, which is found to stabilize the defects. Although this study is based on polystyrene-b-poly(methyl methacrylate) (PS-b-PMMA), we anticipate that these findings can be readily applied to other BCP platforms as well.

Kinetic Pathways of Block Copolymer Directed Self-Assembly: Insights from Efficient Continuum Modeling

We introduce a computationally efficient continuum technique to simulate the complex kinetic pathways of block copolymer self-assembly. Subdiffusive chain dynamics is taken into account via nonlocal Onsager coefficients. An application to directed self-assembly of thin films of diblock copolymers on patterned substrates reveals the conditions under which experimentally observed metastable structures intervene in the desired thin-film morphology. The approach generalizes easily to multiblock copolymers and more complex guiding patterns on the substrate, and its efficiency allows for the systematic optimization of guiding patterns and process conditions.

Strategies for Increasing the Rate of Defect Annihilation in the Directed Self-Assembly of High-χ Block Copolymers

Directed self-assembly (DSA) of high-χ block copolymer thin films is a promising approach for nanofabrication of features with length scale below 10 nm. Recent work has highlighted that kinetics are of crucial importance in determining whether a block copolymer film can self-assemble into a defect-free ordered state. In this work, different strategies for improving the rate of defect annihilation in the DSA of a silicon-containing, high-χ block copolymer film were explored. Chemo-epitaxial DSA of poly(4-methoxystyrene-block-4-trimethylsilylstyrene) with 5× density multiplication was implemented on 300 mm wafers by using production level nanofabrication tools, and the influence of different processes and material parameters on dislocation defect density was studied. It was observed that only at sufficiently low χN can the block copolymer assemble into well-aligned patterns within a practical time frame. In addition, there is a clear correlation between the rate of the lamellar grain coarsening in unguided self-assembly and the rate of dislocation annihilation in DSA. For a fixed chemical pattern, the density of kinetically trapped dislocation defects can be predicted by measuring the correlation length of the unguided self-assembly under the same process conditions. This learning enables more efficient screening of block copolymers and annealing conditions by rapid analysis of block copolymer films that were allowed to self-assemble into unguided (commonly termed fingerprint) patterns.

Combining double patterning with self-assembled block copolymer lamellae to fabricate 10.5 nm full-pitch line/space patterns

Directed self-assembly of block copolymers and self-aligned double patterning are two commonly used pitch scaling techniques to increase the density of lithographic features. In this work, both of these pitch scaling techniques were combined, enabling patterning at even higher densities. In this process, directed self-assembly of a high-χ block copolymer was used to form a line/space pattern, which served as a template for mandrels. Via these mandrels, atomic layer deposition was used to deposit a thin aluminium oxide spacer. By this method, a total pitch scaling factor of 8, equivalent to a 10.5 nm full pitch, was reached. The types of defects and the line roughness at the different steps of the process were discussed.

Dynamic Ordering in High-χ Block Copolymer Lamellae Based on Cross-Sectional Orientational Alignment

Further development of next-generation block copolymer (BCP) lithography processes is contingent on comprehensive studies of the ordering dynamics of high-χ BCPs that can form sub-10 nm features on thin films. However, quantitative analyses of the degree of ordering on the surface and cross sections of thin films have been difficult to execute. To tackle this challenge, we employ a perpendicular lamella-forming high-χ BCP, poly(polyhedral oligomeric silsesquixone-block-2,2,2-trifluoroethyl methacrylate) (PMAPOSS-b-PTFEMA), and reveal that the high-χ PMAPOSS-b-PTFEMA requires three times the activation energy (E_a) compared to that of poly(styrene-block-methyl methacrylate) (PS-b-PMMA) for defect annihilation, at E_a = 2600 ± 420 kJ mol^-1, and a transition from a fast ordering regime with a growth exponent of Φ = 0.30 at lower orientational order parameters (ψ₂ < 0.36) to a slow ordering regime with Φ < 0.05 at ψ₂ > 0.36, where well-aligned lamellae restrict defect annihilations to enthalpically unfavorable glide mechanisms that require BCP intermixing.

Hybrid line-dot nanopatterns from directed self-assembly of diblock copolymers by trenches

We demonstrate that the directed self-assembly of AB diblock copolymers by periodic trenches can be used to fabricate large-scale ordered hybrid line-dot nanopatterns in addition to a defect-free dot nanopattern. The formation of line or dot nanopatterns in thin films with proper surface affinities is controlled by the film thickness, which is modulated by a topographic pattern consisting of steps and trenches. Two kinds of line-dot nanopatterns are achieved with cylinder-forming and sphere-forming copolymers, respectively. One kind of hybrid nanopatterns is composed of perpendicularly standing cylinders (dots) on the steps and parallel monolayer cylinders (lines) within the trenches, while the dots of the other kind are replaced by monolayer spheres on the steps. The thermodynamic stability region of target hybrid nanopatterns is identified by constructing two-dimensional phase diagrams with respect to two control parameters of step height and film thickness using self-consistent field theory. Furthermore, a process window of the line-dot nanopatterns is estimated using cell dynamics simulations based on time-dependent Ginzburg-Landau theory, confirming their feasibility in kinetics.