Improving Thermal Stability of Solution-Processed Indium Zinc Oxide Thin-Film Transistors by Praseodymium Oxide Doping

Effect of Sputtering Oxygen Partial Pressure on the Praseodymium-Doped InZnO Thin Film Transistor Using Microwave Photoconductivity Decay Method

The praseodymium-doped indium-zinc-oxide (PrIZO) thin film transistor (TFT) shows broad application prospects in the new generation of display technologies due to its high performance and high stability. However, traditional device performance evaluation methods need to be carried out after the end of the entire preparation process, which leads to the high-performance device preparation process that takes a lot of time and costs. Therefore, there is a lack of effective methods to optimize the device preparation process. In this paper, the effect of sputtering oxygen partial pressure on the properties of PrIZO thin film was studied, and the quality of PrIZO thin film was quickly evaluated by the microwave photoconductivity decay (µ-PCD) method. The μ-PCD results show that as the oxygen partial pressure increases, the peak first increases and then decreases, while the D value shows the opposite trend. The quality of PrIZO thin film prepared under 10% oxygen partial pressure is optimal due to its low localized defect states. The electric performance of PrIZO TFTs prepared under different oxygen partial pressures is consistent with the μ-PCD results. The optimal PrIZO TFT prepared under 10% oxygen partial pressure exhibits good electric performance with a threshold voltage (V_th) of 1.9 V, a mobility (µ_sat) of 24.4 cm²·V⁻¹·s⁻¹, an I_on/I_off ratio of 2.03 × 10⁷, and a subthreshold swing (SS) of 0.14 V·dec⁻¹.

Rapid and facile method to prepare oxide precursor solution by using sonochemistry technology for WZTO thin film transistors

In this paper, a rapid and facile method of preparing metal-oxide semiconductor precursor solution using sonochemistry technology is proposed. Compared with the traditional method (water bath above 60 °C for several hours), the efficiency of preparing solution is improved, because sonochemical reaction is found to accelerate the dissolution of solutes and the agitation of solution. The color comparison and thermal gravimetric and differential scanning calorimetry of solution confirme the formation of W-doped zinc tin oxide (WZTO) precursor solution with good performance. The effects of sonochemical reactions on the film structure, surface morphology, optical properties and chemical composition of WZTO thin films are analyzed by atomic force microscopy, X-ray diffraction, UV visible spectrum and X-ray photoelectron spectroscopy. The results show that the film has a smooth surface, an amorphous structure, a high transmittance and more M-O bonding. Hence, a rapid process of preparing WZTO solution (sonochemical treatment for 10 min) and fabricate TFT with high electron mobility (2.7 cm2 V-1 s-1) is established, while the corresponding mobility of the traditional method is 1.2 cm2 V-1 s-1. The results show that the sonochemical reaction can improve the efficiency of preparing solution by 1800% and it is a fast and efficient method for preparing precursor solutions.