Hybrid Characteristics of MoS2 Monolayer with Organic Semiconducting Tetracene and Application to Anti-Ambipolar Field Effect Transistor

Spacer Engineering Enables Fine-Tuned Thin Film Microstructure and Efficient Charge Transport for Ultrasensitive 2D Perovskite-Based Heterojunction Phototransistors and Optoelectronic Synapses

2D Ruddlesden-Popper phase layered perovskites (RPLPs) hold great promise for optoelectronic applications. In this study, a series of high-performance heterojunction phototransistors (HPTs) based on RPLPs with different organic spacer cations (namely butylammonium (BA+), cyclohexylammonium (CyHA+), phenethylammonium (PEA+), p-fluorophenylethylammonium (p-F-PEA+), and 2-thiophenethylammonium (2-ThEA+)) are fabricated successfully, in which high-mobility organic semiconductor 2,7-dioctyl[1]benzothieno[3,2-b]benzothiophene is adopted to form type II heterojunction channels with RPLPs. The 2-ThEA+-RPLP-based HPTs show the highest photosensitivity of 3.18 × 107 and the best detectivity of 9.00 × 1018 Jones, while the p-F-PEA+-RPLP-based ones exhibit the highest photoresponsivity of 5.51 × 106 A W-1 and external quantum efficiency of 1.32 × 109%, all of which are among the highest reported values to date. These heterojunction systems also mimicked several optically controllable fundamental characteristics of biological synapses, including excitatory postsynaptic current, paired-pulse facilitation, and the transition from short-term memory to long-term memory states. The device based on 2-ThEA+-RPLP film shows an ultra-high PPF index of 234%. Moreover, spacer engineering brought fine-tuned thin film microstructures and efficient charge transport/transfer, which contributes to the superior photodetection performance and synaptic functions of these RPLP-based HPTs. In-depth structure-property correlations between the organic spacer cations/RPLPs and thin film microstructure/device performance are systematically investigated.

van der Waals 2D transition metal dichalcogenide/organic hybridized heterostructures: recent breakthroughs and emerging prospects of the device

The near-atomic thickness and organic molecular systems, including organic semiconductors and polymer-enabled hybrid heterostructures, of two-dimensional transition metal dichalcogenides (2D-TMDs) can modulate their optoelectronic and transport properties outstandingly. In this review, the current understanding and mechanism of the most recent and significant breakthrough of novel interlayer exciton emission and its modulation by harnessing the band energy alignment between TMDs and organic semiconductors in a TMD/organic (TMDO) hybrid heterostructure are demonstrated. The review encompasses up-to-date device demonstrations, including field-effect transistors, detectors, phototransistors, and photo-switchable superlattices. An exploration of distinct traits in 2D-TMDs and organic semiconductors delves into the applications of TMDO hybrid heterostructures. This review provides insights into the synthesis of 2D-TMDs and organic layers, covering fabrication techniques and challenges. Band bending and charge transfer via band energy alignment are explored from both structural and molecular orbital perspectives. The progress in emission modulation, including charge transfer, energy transfer, doping, defect healing, and phase engineering, is presented. The recent advancements in 2D-TMDO-based optoelectronic synaptic devices, including various 2D-TMDs and organic materials for neuromorphic applications are discussed. The section assesses their compatibility for synaptic devices, revisits the operating principles, and highlights the recent device demonstrations. Existing challenges and potential solutions are discussed. Finally, the review concludes by outlining the current challenges that span from synthesis intricacies to device applications, and by offering an outlook on the evolving field of emerging TMDO heterostructures.

Asymmetric two-dimensional ferroelectric transistor with anti-ambipolar transport characteristics

Two-dimensional (2D) ferroelectric transistors hold unique properties and positions, especially talking about low-power memories, in-memory computing, and multifunctional logic devices. To achieve better functions, appropriate design of new device structures and material combinations is necessary. We present an asymmetric 2D heterostructure integrating MoTe₂, h-BN, and CuInP₂S₆ as a ferroelectric transistor, which exhibits an unusual property of anti-ambipolar transport characteristic under both positive and negative drain biases. Our results demonstrate that the anti-ambipolar behavior can be modulated by external electric field, achieving a peak-to-valley ratio up to 10³. We also provide a comprehensive explanation for the occurrence and modulation of the anti-ambipolar peak based on a model describing linked lateral-and-vertical charge behaviors. Our findings provide insights for designing and constructing anti-ambipolar transistors and other 2D devices with significant potential for future applications.

Interlayer exciton landscape in WS2/tetracene heterostructures

The vertical stacking of two-dimensional materials into heterostructures gives rise to a plethora of intriguing optoelectronic properties and presents an unprecedented potential for technological development. While much progress has been made combining different monolayers of transition metal dichalcogenides (TMDs), little is known about TMD-based heterostructures including organic layers of molecules. Here, we present a joint theory-experiment study on a TMD/tetracene heterostructure demonstrating clear signatures of spatially separated interlayer excitons in low temperature photoluminescence spectra. Here, the Coulomb-bound electrons and holes are localized either in the TMD or in the molecule layer, respectively. We reveal both in theory and experiment signatures of the entire intra- and interlayer exciton landscape in the photoluminescence spectra. In particular, we find both in theory and experiment a pronounced transfer of intensity from the intralayer TMD exciton to a series of energetically lower interlayer excitons with decreasing temperature. In addition, we find signatures of phonon-sidebands stemming from these interlayer exciton states. Our findings shed light on the microscopic nature of interlayer excitons in TMD/molecule heterostructures and could have important implications for technological applications of these materials.

Molecular Triplet Sensitization of Monolayer Semiconductors in 2D Organic/Inorganic Hybrid Heterostructures

Hybrid heterostructures (HSs) comprising organic and two-dimensional (2D) monolayer semiconductors hold great promise for optoelectronic applications. So far, research efforts on organic/2D HSs have exclusively focused on coupling directly photoexcited singlets to monolayer semiconductors. It remains unexplored whether and how the optically dark triplets in organic semiconductors with intriguing properties (e.g., long lifetime) can be implemented for modulating light-matter interactions of hybrid HSs. Herein, we investigate the triplet sensitization of monolayer semiconductors by time-resolved spectroscopic studies on Pd-octaethylporphyrin (PdOEP)/WSe₂ and PdOEP/WS₂ HSs with type I and type II band alignment, respectively. We show that PdOEP triplets formed in ∼5 ps from intersystem crossing can transfer energy or charge to WSe₂ or WS₂ monolayers, respectively, leading to a significant photoluminescence enhancement (180%) in WSe₂ or long-lived charge separation (>2 ns) in WS₂. The triplet transfer occurs in ∼100 ns, which is more than 3 orders of magnitude slower than singlet and can be attributed to its tightly localized nature. Further study of thickness dependence reveals the dictating role of triplet diffusion for triplet sensitization in organic/2D HSs. This study shows the great promise of much less explored molecular triplets on sensitizing 2D monolayer semiconductors and provides the guidance to achieve long-range light harvesting and energy migration in organic/2D HSs for enhanced optoelectronic applications.

Recent progress in 2D hybrid heterostructures from transition metal dichalcogenides and organic layers: properties and applications in energy and optoelectronics fields

Atomically thin transition metal dichalcogenides (TMDs) present extraordinary optoelectronic, electrochemical, and mechanical properties that have not been accessible in bulk semiconducting materials. Recently, a new research field, 2D hybrid heteromaterials, has emerged upon integrating TMDs with molecular systems, including organic molecules, polymers, metal-organic frameworks, and carbonaceous materials, that can tailor the TMD properties and exploit synergetic effects. TMD-based hybrid heterostructures can meet the demands of future optoelectronics, including supporting flexible, transparent, and ultrathin devices, and energy-based applications, offering high energy and power densities with long cycle lives. To realize such applications, it is necessary to understand the interactions between the hybrid components and to develop strategies for exploiting the distinct benefits of each component. Here, we provide an overview of the current understanding of the new phenomena and mechanisms involved in TMD/organic hybrids and potential applications harnessing such valuable materials in an insightful way. We highlight recent discoveries relating to multicomponent hybrid materials. Finally, we conclude this review by discussing challenges related to hybrid heteromaterials and presenting future directions and opportunities in this research field.

Carrier-Transport Mechanism in Organic Antiambipolar Transistors Unveiled by Operando Photoemission Electron Microscopy

Organic antiambipolar transistors (AATs) have partially overlapped p-n junctions. At room temperature, this p-n junction induces a negative differential transconductance in an AAT. However, the detailed carrier-transport mechanism remains unclear. Herein, an operando photoemission electron microscopy is used to tackle this issue owing to the technique's ability to visualize conductive electrons in real time during transistor operation. Notably, it is observed that when the AAT is on, a depletion layer forms at the lateral p-n junction. The visualized depletion layer shows that both p- and n-type channels have pinch-off states in the gate voltage range when the AAT is in on state. The steep potential gradient at the lateral p-n interface enhances the electron conduction from n-type to p-type semiconductor. Another significant finding is that most electrons are considered to recombine with the accumulated holes in the p-type semiconductor, affording the reduction of photoemission intensity by ≈80%. This technique provides a thorough understanding of carrier transport in AATs, further improving the device performance.

Ultrafast Singlet Energy Transfer before Fission in a Tetracene/WSe2 Type II Hybrid Heterostructure

Hybrid heterostructures comprising organic and two-dimensional (2D) layered semiconductors hold great promise for light harvesting and optoelectronic applications. Among them, organic materials that exhibit singlet fission (SF) in which one singlet exciton generates two triplet excitons are particularly attractive and can potentially improve the performance of the device. However, SF-enhanced devices require that SF can compete with direct energy/charge transfer from the singlet exciton. Here, we performed ultrafast spectroscopic studies on a prototypical heterostructure consisting of tetracene (Tc) and monolayer WSe₂. We show a type II band alignment with 16.5 ps hole transfer from photoexcited WSe₂ to tetracene and a long-lived (∼565 ps) charge separation. Importantly, we show ultrafast (∼3.4 ps) singlet exciton energy transfer from photoexcited tetracene to WSe₂, prior to the slow SF process (>20 ps) in tetracene. This study raises the challenge and calls for the careful design of SF-enhanced 2D optoelectronic devices.

Bias-controlled multi-functional transport properties of InSe/BP van der Waals heterostructures

Van der Waals (vdW) heterostructures, consisting of a variety of low-dimensional materials, have great potential use in the design of a wide range of functional devices thanks to their atomically thin body and strong electrostatic tunability. Here, we demonstrate multi-functional indium selenide (InSe)/black phosphorous (BP) heterostructures encapsulated by hexagonal boron nitride. At a positive drain bias (V_D), applied on the BP while the InSe is grounded, our heterostructures show an intermediate gate voltage (V_BG) regime where the current hardly changes, working as a ternary transistor. By contrast, at a negative V_D, the device shows strong negative differential transconductance characteristics; the peak current increases up to ~5 μA and the peak-to-valley current ratio reaches 1600 at V_D = −2 V. Four-terminal measurements were performed on each layer, allowing us to separate the contributions of contact resistances and channel resistance. Moreover, multiple devices with different device structures and contacts were investigated, providing insight into the operation principle and performance optimization. We systematically investigated the influence of contact resistances, heterojunction resistance, channel resistance, and the thickness of BP on the detailed operational characteristics at different V_D and V_BG regimes.

N-type and p-type molecular doping on monolayer MoS2

Monolayer MoS2 has attracted much attention due to its high on/off current ratio, transparency, and suitability for optoelectronic devices. Surface doping by molecular adsorption has proven to be an effective method to facilitate the usage of MoS2. However, there are no works available to systematically clarify the effects of the adsorption of F4TCNQ, PTCDA, and tetracene on the electronic and optical properties of the material. Therefore, this work elucidated the problem by using density functional theory calculations. We found that the adsorption of F4TCNQ and PTCDA turns MoS2 into a p-type semiconductor, while the tetracene converts MoS2 into an n-type semiconductor. The occurrence of a new energy level in the conduction band for F4TCNQ and PTCDA and the valence band for tetracene reduces the bandgap of the monolayer MoS2. Besides, the MoS2/F4TCNQ and MoS2/PTCDA systems exhibit an auxiliary optical peak at the long wavelengths of 950 and 850 nm, respectively. Contrastingly, the MoS2/tetracene modifies the optical spectrum of the monolayer MoS2 only in the ultraviolet region. The findings are in good agreement with the experiments.

Engineering of TMDC-OSC hybrid interfaces: the thermodynamics of unitary and mixed acene monolayers on MoS2

Hybrid systems of two-dimensional (2D) materials such as transition metal dichalcogenides (TMDCs) and organic semiconductors (OSCs) have become subject of great interest for future device architectures. Although OSC-TMDC hybrid systems have been used in first device demonstrations, the precise preparation of ultra-thin OSC films on TMDCs has not been addressed. Due to the weak van der Waals interaction between TMDCs and OSCs, this requires precise knowledge of the thermodynamics at hand. Here, we use temperature-programmed desorption (TPD) and Monte Carlo (MC) simulations of TPD traces to characterize the desorption kinetics of pentacene (PEN) and perfluoropentacene (PFP) on MoS₂ as a model system for OSCs on TMDCs. We show that the monolayers of PEN and PFP are thermally stabilized compared to their multilayers, which allows preparation of nominal monolayers by selective desorption of multilayers. This stabilization is, however, caused by entropy due to a high molecular mobility rather than an enhanced molecule-substrate bond. Consequently, the nominal monolayers are not densely packed films. Molecular mobility can be suppressed in mixed monolayers of PEN and PFP that, due to intermolecular attraction, form highly ordered films as shown by scanning tunneling microscopy. Although this reduces the entropic stabilization, the intermolecular attraction further stabilizes mixed films.

Distinctive Field-Effect Transistors and Ternary Inverters Using Cross-Type WSe2/MoS2 Heterojunctions Treated with Polymer Acid

The electrical and optical characteristics of two-dimensional (2D) transition-metal dichalcogenides (TMDCs) can be improved by surface modification. In this study, distinctive field-effect transistors (FETs) were realized by forming cross-type 2D WSe₂/MoS₂ p-n heterojunctions through surface treatment using poly(methyl methacrylate-co-methacrylic acid) (PMMA-co-PMAA). The FETs were applied to new ternary inverters as multivalued logic circuits (MVLCs). Laser confocal microscope photoluminescence spectroscopy indicated the generation of trions in the WSe₂ and MoS₂ layers, and the intensity decreased after PMMA-co-PMAA treatment. For the cross-type WSe₂/MoS₂ p-n heterojunction FETs subjected to PMMA-co-PMAA treatment, the channel current and the region of anti-ambipolar transistor characteristics increased considerably, and ternary inverter characteristics with three stable logic states, "1", "1/2", and "0", were realized. Interestingly, the intermediate logic state 1/2, which results from the negative differential transconductance characteristics, was realized by the turn-on of all component FETs, as the current of the FETs increased after PMMA-co-PMAA treatment. The electron-rich carboxyl acid moieties in PMMA-co-PMAA can undergo coordination with the metal Mo or W atoms present in the Se or S vacancies, respectively, resulting in the modulation of charge density. These features yielded distinctive FETs and ternary inverters for MVLCs using cross-type WSe₂/MoS₂ heterojunctions.

Emerging Opportunities for Electrostatic Control in Atomically Thin Devices

Electrostatic control of charge carrier concentration underlies the field-effect transistor (FET), which is among the most ubiquitous devices in the modern world. As transistors and related electronic devices have been miniaturized to the nanometer scale, electrostatics have become increasingly important, leading to progressively sophisticated device geometries such as the finFET. With the advent of atomically thin materials in which dielectric screening lengths are greater than device physical dimensions, qualitatively different opportunities emerge for electrostatic control. In this Review, recent demonstrations of unconventional electrostatic modulation in atomically thin materials and devices are discussed. By combining low dielectric screening with the other characteristics of atomically thin materials such as relaxed requirements for lattice matching, quantum confinement of charge carriers, and mechanical flexibility, high degrees of electrostatic spatial inhomogeneity can be achieved, which enables a diverse range of gate-tunable properties that are useful in logic, memory, neuromorphic, and optoelectronic technologies.

AgBr Nanoparticles in Situ Growth on 2D MoS2 Nanosheets for Rapid Bacteria-Killing and Photodisinfection

In this study, a multifunctional hybrid coating composed of AgBr nanoparticles (AgBrNPs) and two-dimensional molybdenum sulfide (MoS₂) nanosheets (AgBr@MoS₂) was constructed on Ti implant materials using an in situ growth method for the first time. With 660 nm light and visible light irradiation, the electrons were rapidly excited from the valence band of MoS₂ to its conduction band, at the same time, AgBrNPs was used as a photoelectric receiver, which exhibited an enhanced photocatalytic activity due to the rapid transfer of photoelectrons from MoS₂ nanosheets to AgBrNPs and the suppression of the recombination of electron-hole pairs. This contributed to the rapid production of reactive oxygen species under 660 nm light irradiation, thus the AgBr@MoS₂ system killed bacteria and degraded organic matter quickly and efficiently in a short time. Meanwhile, the AgBr@MoS₂ system showed excellent stability due to the strong covalent binding between S and Ag in the system, thus preventing AgBrNPs from being reduced to metal Ag.

Negative Transconductance Heterojunction Organic Transistors and their Application to Full-Swing Ternary Circuits

Multivalued logic (MVL) computing could provide bit density beyond that of Boolean logic. Unlike conventional transistors, heterojunction transistors (H-TRs) exhibit negative transconductance (NTC) regions. Using the NTC characteristics of H-TRs, ternary inverters have recently been demonstrated. However, they have shown incomplete inverter characteristics; the output voltage (V_OUT ) does not fully swing from V_DD to G_ND . A new H-TR device structure that consists of a dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) layer stacked on a PTCDI-C13 layer is presented. Due to the continuous DNTT layer from source to drain, the proposed device exhibits novel switching behavior: p-type off/p-type subthreshold region /NTC/ p-type on. As a result, it has a very high on/off current ratio (≈10⁵ ) and exhibits NTC behavior. It is also demonstrated that an array of 36 of these H-TRs have 100% yield, a uniform on/off current ratio, and uniform NTC characteristics. Furthermore, the proposed ternary inverter exhibits full V_DD -to-G_ND swing of V_OUT with three distinct logic states. The proposed transistors and inverters exhibit hysteresis-free operation due to the use of a hydrophobic gate dielectric and encapsulating layers. Based on this, the transient operation of a ternary inverter circuit is demonstrated for the first time.