1
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Lee YT, Huang YT, Chiu SP, Wang RT, Taniguchi T, Watanabe K, Sankar R, Liang CT, Wang WH, Yeh SS, Lin JJ. Determining the Electron Scattering from Interfacial Coulomb Scatterers in Two-Dimensional Transistors. ACS APPLIED MATERIALS & INTERFACES 2024; 16:1066-1073. [PMID: 38113538 DOI: 10.1021/acsami.3c14312] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/21/2023]
Abstract
Two-dimensional (2D) transistors are promising for potential applications in next-generation semiconductor chips. Owing to the atomically thin thickness of 2D materials, the carrier scattering from interfacial Coulomb scatterers greatly suppresses the carrier mobility and hampers transistor performance. However, a feasible method to quantitatively determine relevant Coulomb scattering parameters from interfacial long-range scatterers is largely lacking. Here, we demonstrate a method to determine the Coulomb scattering strength and the density of Coulomb scattering centers in InSe transistors by comprehensively analyzing the low-frequency noise and transport characteristics. Moreover, the relative contributions from long-range and short-range scattering in the InSe transistors can be distinguished. This method is employed to make InSe transistors consisting of various interfaces a model system, revealing the profound effects of different scattering sources on transport characteristics and low-frequency noise. Quantitatively accessing the scattering parameters of 2D transistors provides valuable insight into engineering the interfaces of a wide spectrum of ultrathin-body transistors for high-performance electronics.
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Affiliation(s)
- Yi-Te Lee
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Yu-Ting Huang
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
| | - Shao-Pin Chiu
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Ruey-Tay Wang
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Raman Sankar
- Institute of Physics, Academia Sinica, Taipei 106, Taiwan
| | - Chi-Te Liang
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
| | - Wei-Hua Wang
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan
| | - Sheng-Shiuan Yeh
- Center for Emergent Functional Matter Science, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
- International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Juhn-Jong Lin
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
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2
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Chen W, Lin X, Xu G, Zhong K, Zhang JM, Huang Z. The interfacial properties of 2D metal-monolayer blue phosphorene heterojunctions and transport properties of their field-effect transistors. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 36:125303. [PMID: 38056009 DOI: 10.1088/1361-648x/ad12ff] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/04/2023] [Accepted: 12/06/2023] [Indexed: 12/08/2023]
Abstract
Monolayer blue phosphorene (BlueP) has attracted much interest as a potential channel material in electronic devices. Searching for suitable two-dimensional (2D) metal materials to use as electrodes is critical to fabricating high-performance nanoscale channel BlueP-based field effect transistors (FETs). In this paper, we adopted first-principles calculations to explore binding energies, phonon calculations and electronic structures of 2D metal-BlueP heterojunctions, including Ti3C2-, NbTe2-, Ga(110)- and NbS2-BlueP, and thermal stability of Ti3C2-BlueP heterojunction at room temperature. We also used density functional theory coupled with the nonequilibrium Green function method to investigate the transport properties of sub-5 nm BlueP-based FETs with Ti3C2-BlueP electrodes. Our calculated results indicate that Ti3C2-BlueP has excellent thermal stability and may be used as a candidate electrode material for BlueP-based FETs. The double-gate can more effectively improve the device performance compared with the single-gate. The estimated source leakage current of sub-5 nm transistors reaches up to 369µA µm-1, which is expected to meet the requirements of the international technology roadmap for semiconductors for LP (low-power) devices. Our results imply that 2D Ti3C2may act as an appropriate electrode material for LP BlueP-based FETs, thus providing guidance for the design of future short-gate-length BlueP-based FETs.
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Affiliation(s)
- Weiling Chen
- Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, College of Physics and Energy, Fujian Normal University, Fuzhou 350117, People's Republic of China
| | - Xian Lin
- Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, College of Physics and Energy, Fujian Normal University, Fuzhou 350117, People's Republic of China
| | - Guigui Xu
- Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, College of Physics and Energy, Fujian Normal University, Fuzhou 350117, People's Republic of China
- Concord University College, Fujian Normal University, Fuzhou 350117, People's Republic of China
| | - Kehua Zhong
- Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, College of Physics and Energy, Fujian Normal University, Fuzhou 350117, People's Republic of China
- Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, Xiamen 350117, People's Republic of China
| | - Jian-Min Zhang
- Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, College of Physics and Energy, Fujian Normal University, Fuzhou 350117, People's Republic of China
- Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, Xiamen 350117, People's Republic of China
| | - Zhigao Huang
- Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, College of Physics and Energy, Fujian Normal University, Fuzhou 350117, People's Republic of China
- Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, Xiamen 350117, People's Republic of China
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Lee DH, Park H, Cho WJ. Nanowire-Enhanced Fully Transparent and Flexible Indium Gallium Zinc Oxide Transistors with Chitosan Hydrogel Gate Dielectric: A Pathway to Improved Synaptic Properties. Gels 2023; 9:931. [PMID: 38131917 PMCID: PMC10742836 DOI: 10.3390/gels9120931] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/18/2023] [Revised: 11/03/2023] [Accepted: 11/23/2023] [Indexed: 12/23/2023] Open
Abstract
In this study, a transparent and flexible synaptic transistor was fabricated based on a random-network nanowire (NW) channel made of indium gallium zinc oxide. This device employs a biocompatible chitosan-based hydrogel as an electrolytic gate dielectric. The NW structure, with its high surface-to-volume ratio, facilitated a more effective modulation of the channel conductance induced by protonic-ion polarization. A comparative analysis of the synaptic properties of NW- and film-type devices revealed the distinctive features of the NW-type configuration. In particular, the NW-type synaptic transistors exhibited a significantly larger hysteresis window under identical gate-bias conditions. Notably, these transistors demonstrated enhanced paired-pulse facilitation properties, synaptic weight modulation, and transition from short- to long-term memory. The NW-type devices displayed gradual potentiation and depression of the channel conductance and thus achieved a broader dynamic range, improved linearity, and reduced power consumption compared with their film-type counterparts. Remarkably, the NW-type synaptic transistors exhibited impressive recognition accuracy outcomes in Modified National Institute of Standards and Technology pattern-recognition simulations. This characteristic enhances the efficiency of practical artificial intelligence (AI) processes. Consequently, the proposed NW-type synaptic transistor is expected to emerge as a superior candidate for use in high-efficiency artificial neural network systems, thus making it a promising technology for next-generation AI semiconductor applications.
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Affiliation(s)
- Dong-Hee Lee
- Department of Electronic Materials Engineering, Kwangwoon University, Gwangun-ro 20, Nowon-gu, Seoul 01897, Republic of Korea
| | - Hamin Park
- Department of Electronic Engineering, Kwangwoon University, Gwangun-ro 20, Nowon-gu, Seoul 01897, Republic of Korea
| | - Won-Ju Cho
- Department of Electronic Materials Engineering, Kwangwoon University, Gwangun-ro 20, Nowon-gu, Seoul 01897, Republic of Korea
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4
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Lee DH, Kim HS, Park KW, Park H, Cho WJ. Enhanced Synaptic Behaviors in Chitosan Electrolyte-Based Electric-Double-Layer Transistors with Poly-Si Nanowire Channel Structures. Biomimetics (Basel) 2023; 8:432. [PMID: 37754183 PMCID: PMC10526377 DOI: 10.3390/biomimetics8050432] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/24/2023] [Revised: 09/14/2023] [Accepted: 09/16/2023] [Indexed: 09/28/2023] Open
Abstract
In this study, we enhance the synaptic behavior of artificial synaptic transistors by utilizing nanowire (NW)-type polysilicon channel structures. The high surface-to-volume ratio of the NW channels enables efficient modulation of the channel conductance, which is interpreted as the synaptic weight. As a result, NW-type synaptic transistors exhibit a larger hysteresis window compared to film-type synaptic transistors, even within the same gate voltage sweeping range. Moreover, NW-type synaptic transistors demonstrate superior short-term facilitation and long-term memory transition compared with film-type ones, as evidenced by the measured paired-pulse facilitation and excitatory post-synaptic current characteristics at varying frequencies and pulse numbers. Additionally, we observed gradual potentiation/depression characteristics, making these artificial synapses applicable to artificial neural networks. Furthermore, the NW-type synaptic transistors exhibit improved Modified National Institute of Standards and Technology pattern recognition rate of 91.2%. In conclusion, NW structure channels are expected to be a promising technology for next-generation artificial intelligence (AI) semiconductors, and the integration of NW structure channels has significant potential to advance AI semiconductor technology.
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Affiliation(s)
- Dong-Hee Lee
- Department of Electronic Materials Engineering, Kwangwoon University, Gwangun-ro 20, Nowon-gu, Seoul 01897, Republic of Korea; (D.-H.L.); (H.-S.K.); (K.-W.P.)
| | - Hwi-Su Kim
- Department of Electronic Materials Engineering, Kwangwoon University, Gwangun-ro 20, Nowon-gu, Seoul 01897, Republic of Korea; (D.-H.L.); (H.-S.K.); (K.-W.P.)
| | - Ki-Woong Park
- Department of Electronic Materials Engineering, Kwangwoon University, Gwangun-ro 20, Nowon-gu, Seoul 01897, Republic of Korea; (D.-H.L.); (H.-S.K.); (K.-W.P.)
| | - Hamin Park
- Department of Electronic Engineering, Kwangwoon University, Gwangun-ro 20, Nowon-gu, Seoul 01897, Republic of Korea;
| | - Won-Ju Cho
- Department of Electronic Materials Engineering, Kwangwoon University, Gwangun-ro 20, Nowon-gu, Seoul 01897, Republic of Korea; (D.-H.L.); (H.-S.K.); (K.-W.P.)
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5
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Giri A, Park G, Jeong U. Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications. Chem Rev 2023; 123:3329-3442. [PMID: 36719999 PMCID: PMC10103142 DOI: 10.1021/acs.chemrev.2c00455] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/01/2023]
Abstract
The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.
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Affiliation(s)
- Anupam Giri
- Department of Chemistry, Faculty of Science, University of Allahabad, Prayagraj, UP-211002, India
| | - Gyeongbae Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea.,Functional Materials and Components R&D Group, Korea Institute of Industrial Technology, Gwahakdanji-ro 137-41, Sacheon-myeon, Gangneung, Gangwon-do25440, Republic of Korea
| | - Unyong Jeong
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea
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6
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Wang S, Liu X, Zhou P. The Road for 2D Semiconductors in the Silicon Age. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2106886. [PMID: 34741478 DOI: 10.1002/adma.202106886] [Citation(s) in RCA: 25] [Impact Index Per Article: 12.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2021] [Revised: 10/21/2021] [Indexed: 06/13/2023]
Abstract
Continued reduction in transistor size can improve the performance of silicon integrated circuits (ICs). However, as Moore's law approaches physical limits, high-performance growth in silicon ICs becomes unsustainable, due to challenges of scaling, energy efficiency, and memory limitations. The ultrathin layers, diverse band structures, unique electronic properties, and silicon-compatible processes of 2D materials create the potential to consistently drive advanced performance in ICs. Here, the potential of fusing 2D materials with silicon ICs to minimize the challenges in silicon ICs, and to create technologies beyond the von Neumann architecture, is presented, and the killer applications for 2D materials in logic and memory devices to ease scaling, energy efficiency bottlenecks, and memory dilemmas encountered in silicon ICs are discussed. The fusion of 2D materials allows the creation of all-in-one perception, memory, and computation technologies beyond the von Neumann architecture to enhance system efficiency and remove computing power bottlenecks. Progress on the 2D ICs demonstration is summarized, as well as the technical hurdles it faces in terms of wafer-scale heterostructure growth, transfer, and compatible integration with silicon ICs. Finally, the promising pathways and obstacles to the technological advances in ICs due to the integration of 2D materials with silicon are presented.
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Affiliation(s)
- Shuiyuan Wang
- ASIC & System State Key Lab, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Xiaoxian Liu
- ASIC & System State Key Lab, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Peng Zhou
- ASIC & System State Key Lab, School of Microelectronics, Fudan University, Shanghai, 200433, China
- Frontier Institute of Chip and System, Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
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7
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Cheng CY, Pai WL, Chen YH, Paylaga NT, Wu PY, Chen CW, Liang CT, Chou FC, Sankar R, Fuhrer MS, Chen SY, Wang WH. Phase Modulation of Self-Gating in Ionic Liquid-Functionalized InSe Field-Effect Transistors. NANO LETTERS 2022; 22:2270-2276. [PMID: 35225620 DOI: 10.1021/acs.nanolett.1c04522] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Understanding the Coulomb interactions between two-dimensional (2D) materials and adjacent ions/impurities is essential to realizing 2D material-based hybrid devices. Electrostatic gating via ionic liquids (ILs) has been employed to study the properties of 2D materials. However, the intrinsic interactions between 2D materials and ILs are rarely addressed. This work studies the intersystem Coulomb interactions in IL-functionalized InSe field-effect transistors by displacement current measurements. We uncover a strong self-gating effect that yields a 50-fold enhancement in interfacial capacitance, reaching 550 nF/cm2 in the maximum. Moreover, we reveal the IL-phase-dependent transport characteristics, including the channel current, carrier mobility, and density, substantiating the self-gating at the InSe/IL interface. The dominance of self-gating in the rubber phase is attributed to the correlation between the intra- and intersystem Coulomb interactions, further confirmed by Raman spectroscopy. This study provides insights into the capacitive coupling at the InSe/IL interface, paving the way to developing liquid/2D material hybrid devices.
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Affiliation(s)
- Chih-Yi Cheng
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan
| | - Wei-Liang Pai
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
| | - Yi-Hsun Chen
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan
| | | | - Pin-Yun Wu
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan
| | - Chun-Wei Chen
- Department of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan
| | - Chi-Te Liang
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
| | - Fang-Cheng Chou
- Center of Condensed Matter Sciences, National Taiwan University, Taipei 106, Taiwan
| | - Raman Sankar
- Center of Condensed Matter Sciences, National Taiwan University, Taipei 106, Taiwan
- Institute of Physics, Academia Sinica, Taipei 106, Taiwan
| | - Michael S Fuhrer
- School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria 3800, Australia
| | - Shao-Yu Chen
- Center of Condensed Matter Sciences, National Taiwan University, Taipei 106, Taiwan
- School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria 3800, Australia
- Center of Atomic Initiative for New Material, National Taiwan University, Taipei 106, Taiwan
| | - Wei-Hua Wang
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan
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8
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Jang H, Song Y, Seok Y, Im H, Kim TH, Lee JH, Kim YH, Lee K. Zero power infrared sensing in 2D/3D-assembled heterogeneous graphene/In/InSe/Au. NANOSCALE 2022; 14:3004-3012. [PMID: 35170602 DOI: 10.1039/d1nr07884d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Low- or self-powered infrared sensors can be used in a broad range of applications, including networking mobile edge devices and image recognition for autonomous driving technology. Here, we show state-of-the-art self-powered near-infrared (NIR) sensors using graphene/In/InSe/Au as a photoactive region. The self-powered NIR sensors show outstanding performance, achieving a photoresponsivity of ∼8.5 A W-1 and a detectivity of ∼1012 Jones at 850 nm light. Multiple self-powered InSe photodetectors with different device structures and contacts were systematically investigated. In particular, the asymmetrically assembled graphene/In/InSe/Au vertical heterostructure offers a high built-in field, which gives rise to efficient electron-hole pair separation and transit time that is shorter than the photocarrier lifetime. The built-in potential across the InSe was estimated using the Schottky barrier height at each metal contact with InSe, obtained using density functional theory calculations. We also demonstrate InSe vertical field-effect transistors and provide an out-of-plane carrier mobility of InSe. Using the out-of-plane mobility and structural parameters of each device, the built-in field, drift velocity, and corresponding transit time are estimated.
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Affiliation(s)
- Hanbyeol Jang
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Yumin Song
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
| | - Yongwook Seok
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Heungsoon Im
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Tae Hyung Kim
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
| | - Joo-Hyoung Lee
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Yong-Hoon Kim
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
| | - Kayoung Lee
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
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9
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Hu Y, Dai M, Feng W, Zhang X, Gao F, Zhang S, Tan B, Zhang J, Shuai Y, Fu Y, Hu P. Ultralow Power Optical Synapses Based on MoS 2 Layers by Indium-Induced Surface Charge Doping for Biomimetic Eyes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2104960. [PMID: 34655120 DOI: 10.1002/adma.202104960] [Citation(s) in RCA: 26] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/28/2021] [Revised: 09/21/2021] [Indexed: 06/13/2023]
Abstract
Biomimetic eyes, with their excellent imaging functions such as large fields of view and low aberrations, have shown great potentials in the fields of visual prostheses and robotics. However, high power consumption and difficulties in device integration severely restrict their rapid development. In this study, an artificial synaptic device consisting of a molybdenum disulfide (MoS2 ) film coated with an electron injection enhanced indium (In) layer is proposed to increase the channel conductivity and reduce the power consumption. This artificial synaptic device achieves an ultralow power consumption of 68.9 aJ per spike, which is several hundred times lower than those of the optical artificial synapses reported in literature. Furthermore, the multilayer and polycrystalline MoS2 film shows persistent photoconductivity performance, effectively resulting in short-term plasticity, long-term plasticity, and their transitions between each other. A 5 × 5 In/MoS2 synaptic device array is constructed into a hemispherical electronic retina, demonstrating its impressive image sensing and learning functions. This research provides a new methodology for effective control of artificial synaptic devices, which have great opportunities used in bionic retinas, robots, and visual prostheses.
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Affiliation(s)
- Yunxia Hu
- Institute for Advanced Ceramics, School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150001, China
| | - Mingjin Dai
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Wei Feng
- Department of Chemistry and Chemical Engineering, College of Science, Northeast Forestry University, Harbin, 150040, China
| | - Xin Zhang
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150001, China
| | - Feng Gao
- Institute for Advanced Ceramics, School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150001, China
| | - Shichao Zhang
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150001, China
| | - Biying Tan
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150001, China
| | - Jia Zhang
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150001, China
| | - Yong Shuai
- School of Energy Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
| | - YongQing Fu
- Faculty of Engineering & Environment, Northumbria University, Newcastle upon Tyne, NE1 8ST, UK
| | - PingAn Hu
- Institute for Advanced Ceramics, School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150001, China
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10
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Chang YR, Nishimura T, Nagashio K. Thermodynamic Perspective on the Oxidation of Layered Materials and Surface Oxide Amelioration in 2D Devices. ACS APPLIED MATERIALS & INTERFACES 2021; 13:43282-43289. [PMID: 34478258 DOI: 10.1021/acsami.1c13279] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Surface oxidation is an unneglectable problem for 2D semiconductors because it hinders the practical application of 2D material-based devices. In this research, the oxidation of layered materials is investigated by a thermodynamic approach to verify their oxidation tendency. It was found that almost all 2D materials are thermodynamically unstable in the presence of oxygen at room temperature. Two potential solutions for surface oxidation are proposed in this work: (i) the conversion of the surface oxides to functional oxides through the deposition of active metals and (ii) the recovery of original 2D materials from the surface oxides by 2D material heterostructure formation with the same chalcogen group. Supported by thermodynamic calculations, both approaches are feasible to ameliorate the surface oxides of 2D materials by the appropriate selection of metals for deposition or 2D materials for heterostructure formation. Thermodynamic data of 64 elements and 75 2D materials are included and compared in this research, which can improve gate insulator or electrode contact material selection in 2D devices to solve the surface oxidation issue. For instance, yttrium and titanium are good candidates for surface oxide conversion, while zirconium and hafnium chalcogenide can trigger the recovery of original 2D materials from their surface oxides. The systematic diagrams presented in this work can serve as a guideline for considering surface oxidation in future device fabrication from various 2D materials.
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Affiliation(s)
- Yih-Ren Chang
- Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
| | - Tomonori Nishimura
- Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
| | - Kosuke Nagashio
- Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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11
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Wang X, Zhou X, Cui A, Deng M, Xu X, Xu L, Ye Y, Jiang K, Shang L, Zhu L, Zhang J, Li Y, Hu Z, Chu J. Flexo-photoelectronic effect in n-type/p-type two-dimensional semiconductors and a deriving light-stimulated artificial synapse. MATERIALS HORIZONS 2021; 8:1985-1997. [PMID: 34846475 DOI: 10.1039/d1mh00024a] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Flexoelectricity and photoelectricity with their coupled effect (the so-called flexo-photoelectronic effect), are of increasing interest in the study of electronics and optoelectronics in van der Waals layered semiconductors. However, the related device design is severely restricted owing to the ambiguous underlying physical nature of flexo-photoelectronic effects originating from the co-manipulation of light and strain-gradients. Here, flexoelectric polarization and the flexo-photoelectronic effect of few-layered semiconductors have been multi-dimensionally investigated from high-resolution microscopic characterization on the nanoscale, physics analysis, and deriving a device design. We found that two back-to-back built-in electric fields form in bent InSe and WSe2, and greatly modulate the transport behaviors of photogenerated carriers, further facilitating the separation of photogenerated electron-hole pairs and trapping the holes/electrons in InSe or WSe2 channels, recorded in realtime by a home-made technique of lighting Kelvin probe force microscopy (KPFM). The slow release of trapped carriers contributes to the photoconductance relaxation after illumination. Utilizing the photoconductance relaxation, a light-stimulated artificial synapse based on the flexo-photoelectronic effect of bent InSe has been achieved. Significantly, all the pair-pulse facilitation (PPF) behavior, spike frequency-dependent excitatory post-synaptic current (EPSC) and the transition from short-term memory (STM) to long-term memory (LTM) have been successfully realized in this artificial synapse. This work adds to the investigation of flexo-photoelectronic effects on 2D optoelectronics, and moves towards the development of 2D neuromorphic electronics.
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Affiliation(s)
- Xiang Wang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
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Promises and prospects of two-dimensional transistors. Nature 2021; 591:43-53. [PMID: 33658691 DOI: 10.1038/s41586-021-03339-z] [Citation(s) in RCA: 272] [Impact Index Per Article: 90.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/16/2020] [Accepted: 12/14/2020] [Indexed: 01/31/2023]
Abstract
Two-dimensional (2D) semiconductors have attracted tremendous interest as atomically thin channels that could facilitate continued transistor scaling. However, despite many proof-of-concept demonstrations, the full potential of 2D transistors has yet to be determined. To this end, the fundamental merits and technological limits of 2D transistors need a critical assessment and objective projection. Here we review the promise and current status of 2D transistors, and emphasize that widely used device parameters (such as carrier mobility and contact resistance) could be frequently misestimated or misinterpreted, and may not be the most reliable performance metrics for benchmarking 2D transistors. We suggest that the saturation or on-state current density, especially in the short-channel limit, could provide a more reliable measure for assessing the potential of diverse 2D semiconductors, and should be applied for cross-checking different studies, especially when milestone performance metrics are claimed. We also summarize the key technical challenges in optimizing the channels, contacts, dielectrics and substrates and outline potential pathways to push the performance limit of 2D transistors. We conclude with an overview of the critical technical targets, the key technological obstacles to the 'lab-to-fab' transition and the potential opportunities arising from the use of these atomically thin semiconductors.
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Galiy PV, Nenchuk TM, Ciszewski A, Mazur P, Buzhuk YM, Tsvetkova OV. Self-assembled indium nanostructures formation on InSe (0001) surface. APPLIED NANOSCIENCE 2020. [DOI: 10.1007/s13204-020-01421-y] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/24/2022]
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Chen F, Cui A, Wang X, Gao C, Xu L, Jiang K, Zhang J, Hu Z, Chu J. Lattice vibration characteristics in layered InSe films and the electronic behavior of field-effect transistors. NANOTECHNOLOGY 2020; 31:335702. [PMID: 32344392 DOI: 10.1088/1361-6528/ab8df1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Understanding how temperature affects the structural and electronic properties for two-dimensional (2D) semiconductors could promote the application and development of nanoelectronic devices. Here, the temperature dependence of lattice structure for indium selenide (InSe) nanosheets and the corresponding electronic properties of 3 nm indium-deposited InSe field-effect transistors (FETs) are systematically demonstrated. Analyses of Raman spectra suggest that the difference of phonon frequency (Δω) for the A[Formula: see text] mode is found to be 3.14 cm-1, which is larger than that of the E[Formula: see text] mode due to the stronger electron-phonon coupling for the A[Formula: see text] mode. The device performance based on indium-deposited InSe is systematically explained using Kelvin probe force microscopy (KPFM) and the predicted energy band structure. Furthermore, FETs based on temperature and variable thickness InSe flakes are designed as applicable devices. Our findings are of fundamental importance to explain the underlying physics in intrinsic InSe transistors and improve further applications.
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Affiliation(s)
- Fangfang Chen
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
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Yu M, Hu Y, Gao F, Dai M, Wang L, Hu P, Feng W. High-Performance Devices Based on InSe-In 1-xGa xSe Van der Waals Heterojunctions. ACS APPLIED MATERIALS & INTERFACES 2020; 12:24978-24983. [PMID: 32378872 DOI: 10.1021/acsami.0c03206] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Multilayer InSe is a promising material for high-performance optoelectronic applications because of its small direct band gap and good light absorption. However, as a photoconductive photodetector, multilayer InSe photodetectors endure large dark current and high driving power. In this work, we study the electrical properties of InGaSe alloys and demonstrate the high-performance devices based on multilayer InSe-In0.24Ga0.76Se van der Waals heterojunctions (vdWHs). The electrical properties of InGaSe alloy samples strongly depend on the ratio of In to Ga, and the In0.24Ga0.76Se alloy shows a p-type transport behavior. More importantly, a multilayer InSe-In0.24Ga0.76Se vdWH device is demonstrated as a high-performance forward diode, photodiode, and self-powered photodetector (SPPD). The multilayer InSe-In0.24Ga0.76Se diode shows a high forward rectification ratio of over 103 without gate modulation at room temperature, which is superior to most of the multilayer vdWH devices. Moreover, the vdWH photodiode has a broadband photoresponse spectrum (400-1000 nm) and a high-performance photoresponse. The light switching ratio, detectivity (D*), and responsivity (R) are 103, 1012 Jones, and 49 A W-1 for 400 nm illumination, respectively. Furthermore, the vdWH SPPD also shows a sensitive photoresponse to a broadband spectrum of 400-1000 nm. Our work offers an opportunity for multilayer vdWH device applications in high-performance electronic and optoelectronic devices.
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Affiliation(s)
- Miaomiao Yu
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Yunxia Hu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150080, China
| | - Feng Gao
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150080, China
| | - Mingjin Dai
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150080, China
| | - Lifeng Wang
- Institute for Frontier Materials, Deakin University, 75 Pigdons Road, Waurn Ponds, Geelong, Victoria 3216, Australia
| | - PingAn Hu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150080, China
| | - Wei Feng
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
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Tu CL, Lin KI, Pu J, Chung TF, Hsiao CN, Huang AC, Yang JR, Takenobu T, Chen CH. CVD growth of large-area InS atomic layers and device applications. NANOSCALE 2020; 12:9366-9374. [PMID: 32338265 DOI: 10.1039/d0nr01104e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Group-III monochalcogenides of two-dimensional (2D) layered materials have attracted widespread attention among scientists due to their unique electronic performance and interesting chemical and physical properties. Indium sulfide (InS) is attracting increasing interest from scientists because it has two distinct crystal structures. However, studies on the synthesis of highly crystalline, large-area, and atomically thin-film InS have not been reported thus far. Here, the chemical vapor deposition (CVD) synthesis method of atomic InS crystals has been reported in this paper. The direct chemical vapour phase reaction of metal oxides with chalcogen precursors produces a large-sized hexagonal crystal structure and atomic-thickness InS flakes or films. The InS atomic films are merged with a plurality of triangular InS crystals that are uniform and entire and have surface areas of 1 cm2 and controllable thicknesses in bilayers or trilayers. The properties of the as-grown highly crystalline samples were characterized by spectroscopic and microscopic measurements. The ion-gel gated InS field-effect transistors (FETs) reveal n-type transport behavior, and have an on-off current ratio of >103 and a room-temperature electron mobility of ∼2 cm2 V-1 s-1. Moreover, our CVD InS can be transferred from mica to any substrates, so various 2D materials can be reassembled into vertically stacked heterostructures, thus facilitating the development of heterojunctions and exploration of the properties and applications of their interactions.
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Affiliation(s)
- Chien-Liang Tu
- Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung 80424, Taiwan.
| | - Kuang-I Lin
- Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan
| | - Jiang Pu
- Department of Applied Physics, Nagoya University, Nagoya 464-8603, Japan
| | - Tsai-Fu Chung
- Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Chien-Nan Hsiao
- Taiwan Instrument Research Institute, National Applied Research Laboratories, Hsinchu 30076, Taiwan
| | - An-Ci Huang
- Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung 80424, Taiwan.
| | - Jer-Ren Yang
- Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Taishi Takenobu
- Department of Applied Physics, Nagoya University, Nagoya 464-8603, Japan
| | - Chang-Hsiao Chen
- Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung 80424, Taiwan.
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Jin S, Sun T, Fan Y, Wang L, Zhu M, Yang J, Jiang W. Synthesis of freestanding PEDOT:PSS/PVA@Ag NPs nanofiber film for high-performance flexible thermoelectric generator. POLYMER 2019. [DOI: 10.1016/j.polymer.2019.01.065] [Citation(s) in RCA: 37] [Impact Index Per Article: 7.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
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