Sub-2 V, Transfer-Stamped Organic/Inorganic Complementary Inverters Based on Electrolyte-Gated Transistors

Hole Mobility Enhancement in Benzo[1,2-b:4,5-b']Dithiophene-Based Conjugated Polymer Transistors through Directional Alignment, Perovskite Functionalization and Solid-State Electrolyte Gating

Tunability in electronic and optical properties has been intensively explored for developing conjugated polymers and their applications in organic and perovskite-based electronics. Particularly, the charge carrier mobility of conjugated polymer semiconductors has been deemed to be a vital figure-of-merit for achieving high-performance organic field-effect transistors (OFETs). In this study, the systematic hole carrier mobility improvement of benzo[1,2-b:4,5-b']dithiophene-based conjugated polymer in perovskite-functionalized organic transistors is demonstrated. In conventional OFETs with a poly(methyl methacrylate) (PMMA) gate dielectric, improvements in hole mobility of 0.019 cm2 V-1 s-1 are measured using an off-center spin-coating technique, which exceeds those of on-center counterparts (0.22 ± 0.07 × 10-2 cm2 V-1 s-1). Furthermore, the mobility drastically increases by adopting solid-state electrolyte gating, corresponding to 2.99 ± 1.03 cm2 V-1 s-1 for the control, and the best hole mobility is 8.03 cm2 V-1 s-1 (average ≈ 6.94 ± 0.59 cm2 V-1 s-1) for perovskite-functionalized OFETs with a high current on/off ratio of >106. The achieved device performance would be attributed to the enhanced film crystallinity and charge carrier density in the hybrid perovskite-functionalized organic transistor channel, resulting from the high-capacitance electrolyte dielectric.

Ionogels: recent advances in design, material properties and emerging biomedical applications

Ionic liquid (IL)-based gels (ionogels) have received considerable attention due to their unique advantages in ionic conductivity and their biphasic liquid-solid phase property. In ionogels, the negligibly volatile ionic liquid is retained in the interconnected 3D pore structure. On the basis of these physical features as well as the chemical properties of well-chosen ILs, there is emerging interest in the anti-bacterial and biocompatibility aspects. In this review, the recent achievements of ionogels for biomedical applications are summarized and discussed. Following a brief introduction of the various types of ILs and their key physicochemical and biological properties, the design strategies and fabrication methods of ionogels are presented by means of different confining networks. These sophisticated ionogels with diverse functions, aimed at biomedical applications, are further classified into several active domains, including wearable strain sensors, therapeutic delivery systems, wound healing and biochemical detections. Finally, the challenges and possible strategies for the design of future ionogels by integrating materials science with a biological interface are proposed.

Interfacial Interaction Enables Enhanced Mobility in Hybrid Perovskite-Conjugated Polymer Transistors with High-k Fluorinated Polymer Dielectrics

The charge carrier mobility of organic field-effect transistors (OFETs) has been remarkably improved through several engineering approaches and techniques by targeting pivotal parts. Herein, an ultrathin perovskite channel layer that boosts the field-effect mobility of conjugated polymer OFETs by forming perovskite-conjugated polymer hybrid semiconducting channel is introduced. The optimized lead-iodide-based perovskite-conjugated polymer hybrid channel transistors show enhanced hole mobility of over 4 cm²  V^-1  s^-1 (average = 2.10 cm²  V^-1  s^-1 ) with high reproducibility using a benchmark poly(3-hexylthiophene) (P3HT) polymer and employing high-k fluorinated polymer dielectrics. A significant hole carrier mobility enhancement of ≈200-400% in benzo[1,2-b:4,5:b']dithiophene (BDT)-based conjugated polymers is also demonstrated by exploring certain interactive groups with perovskite. This significant enhancement in the transistor performance is attributed to the increased charge carrier density in the hybrid semiconducting channel and the perovskite-polymer interactions. The findings of this paper demonstrate an exceptional engineering approach for carrier mobility enhancement in hybrid perovskite-conjugated-polymer-based electronic devices.

Tuning Threshold Voltage of Electrolyte-Gated Transistors by Binary Ion Doping

Electrolyte-gated transistors (EGTs) operating at low voltages have attracted significant attention in widespread applications, including neuromorphic devices, nonvolatile memories, chemical/biosensors, and printed electronics. To increase the practicality of the EGTs in electronic circuits, systematic control of threshold voltage (Vth), which determines the power consumption and noise margin of the circuits, is essential. In this study, we present a simple strategy for systematically tuning Vth to almost half of the operating potential range of the EGT by controlling the electrochemical doping of electrolyte ions into organic p-type semiconductors. The type of anion in the ionogel determines Vth as well as other transistor characteristics, such as the subthreshold swing and mobility, because the positive hole carriers are the majority carriers. More importantly, Vth can be finely controlled by binary anion doping using ionogels with two anions with varying molar fractions at a fixed cation. In addition, the binary anion doping successfully controls the inversion characteristics of ion-gated inverters. As unlimited combinations of ion pairs are possible for ionogels, this study opens a route for controlling the device characteristics to expand the practicality and applicability of ionogel-based EGTs for next-generation ionic/electronic devices.

Emerging iongel materials towards applications in energy and bioelectronics

In the past two decades, ionic liquids (ILs) have blossomed as versatile task-specific materials with a unique combination of properties, which can be beneficial for a plethora of different applications. The additional need of incorporating ILs into solid devices led to the development of a new class of ionic soft-solid materials, named here iongels. Nowadays, iongels cover a wide range of materials mostly composed of an IL component immobilized within different matrices such as polymers, inorganic networks, biopolymers or inorganic nanoparticles. This review aims at presenting an integrated perspective on the recent progress and advances in this emerging type of material. We provide an analysis of the main families of iongels and highlight the emerging types of these ionic soft materials offering additional properties, such as thermoresponsiveness, self-healing, mixed ionic/electronic properties, and (photo)luminescence, among others. Next, recent trends in additive manufacturing (3D printing) of iongels are presented. Finally, their new applications in the areas of energy, gas separation and (bio)electronics are detailed and discussed in terms of performance, underpinning it to the structural features and processing of iongel materials.

Flexible complementary circuits operating at sub-0.5 V via hybrid organic-inorganic electrolyte-gated transistors

Electrolyte-gated transistors (EGTs) hold great promise for next-generation printed logic circuitry, biocompatible integrated sensors, and neuromorphic devices. However, EGT-based complementary circuits with high voltage gain and ultralow driving voltage (<0.5 V) are currently unrealized, because achieving balanced electrical output for both the p- and n-type EGT components has not been possible with current materials. Here we report high-performance EGT complementary circuits containing p-type organic electrochemical transistors (OECTs) fabricated with an ion-permeable organic semiconducting polymer (DPP-g2T) and an n-type electrical double-layer transistor (EDLT) fabricated with an ion-impermeable inorganic indium-gallium-zinc oxide (IGZO) semiconductor. Adjusting the IGZO composition enables tunable EDLT output which, for In:Ga:Zn = 10:1:1 at%, balances that of the DPP-g2T OECT. The resulting hybrid electrolyte-gated inverter (HCIN) achieves ultrahigh voltage gains (>110) under a supply voltage of only 0.7 V. Furthermore, NAND and NOR logic circuits on both rigid and flexible substrates are realized, enabling not only excellent logic response with driving voltages as low as 0.2 V but also impressive mechanical flexibility down to 1-mm bending radii. Finally, the HCIN was applied in electrooculographic (EOG) signal monitoring for recording eye movement, which is critical for the development of wearable medical sensors and also interfaces for human-computer interaction; the high voltage amplification of the present HCIN enables EOG signal amplification and monitoring in which a small ∼1.5 mV signal is amplified to ∼30 mV.

Solid-State Organic Electrolyte-Gated Transistors Based on Doping-Controlled Polymer Composites with a Confined Two-Dimensional Channel in Dry Conditions

We report comprehensive and comparative studies on chemical and electrochemical controls of doping characteristics of various poly(3,4-ethylenedioxythiophene) (PEDOT) composites complexed with sulfonates. Chemical treatment of PEDOT composites was conducted with a dedoping agent, tetrakis(dimethylamino)ethylene (TDAE), resulting in the changes in conformation and bulk charge-carrier density. Electrochemical control of doping states was done with a solid-state ionogel based on an ionic liquid dispersed in a polymer matrix. With this approach, we can fabricate solid-state organic electrolyte-gated transistors (OEGTs) with a large current modulation, a high mobility of holes, and a low driving voltage. Our OEGTs are operational in a dry environment and, surprisingly, form the two-dimensional channel of the interfacial charge carriers modulating the conductance under gate bias, unlike conventional liquid-based OEGTs. The charge-carrier mobility and the on-to-off current ratio reach up to ∼7 cm² V^-1 s^-1 and over 10⁴, respectively, from the chemically dedoped PEDOT composites. The ionogel-based gating of the layer of TDAE-treated PEDOT composites induces a reversible transition between a highly doped bipolaronic state and neutral/polaronic states, as revealed by the absorption profiles under gate bias. We also demonstrate in-plane OEGTs, in which the dedoped channel and the conductive source/drain electrodes are made of a single PEDOT composite layer.

Thermostable Ion Gels for High-Temperature Operation of Electrolyte-Gated Transistors

High-temperature durability is critical for application of organic materials in electronic devices that operate in harsh environments. In this work, thermostable physically cross-linked polymer electrolytes, or thermostable physical ion gels, were successfully developed using crystallization-induced phase separation of semicrystalline polyamides (PAs) in an ionic liquid (IL). In these ion gels, phase-separated PA crystals act as network junctions and enable the ion gels to maintain their mechanical integrity up to 180 °C. ILs and ion gels are suitable electrolyte candidates for thin-film devices operating at high temperatures because they outperform other electrolytes that use aqueous and organic solvents, owing to their superior thermal stability and nonvolatility. In addition to thermal stability, the PA gels exhibited high ionic conductivity (∼1 mS/cm) and specific capacitance (∼10 μF/cm²) at room temperature; these values increased significantly with increasing temperature, while the gel retained its solid-state mechanical integrity. These thermostable ion gels were successfully used as an electrolyte gate dielectric in organic thin-film transistors that operate at high temperatures (ca. 150 °C) and low voltages (<1 V). The transistors gated with the dielectrics had a high on/off current ratio of (3.04 ± 0.24) × 10⁵ and a hole mobility of 2.83 ± 0.20 cm²/V·s. By contrast, conventional physical ion gels based on semicrystalline polymers of poly(vinylidene fluoride-co-hexafluoropropylene) and polyvinylidene fluoride lost their mechanical integrity and dewetted from a semiconductor channel at lower temperatures. Therefore, these results demonstrate an effective method of generating thermally stable, mechanically robust, and highly conductive solid polymer electrolytes for electronic and electrochemical devices operating in a wide temperature range.

Ultrahigh-Mobility and Solution-Processed Inorganic P-Channel Thin-Film Transistors Based on a Transition-Metal Halide Semiconductor

The development of p-channel devices with comparable electrical performances to their n-channel counterparts has been delayed due to the lack of p-type semiconductor materials and device optimization. In this present work, we successfully demonstrated p-channel inorganic thin-film transistors (TFTs) with high hole mobilities similar to the values of n-channel devices. To boost the device performance, the solution-processed copper iodide (CuI) semiconductor was gated by a solid polymer electrolyte. The electrolyte gating could realize electrical double layer (EDL) formation and a three-dimensional carrier transport channel and thus substantially increased charge accumulation in the channel region and realized a high mobility above 90 cm²/(V s) (45.12 ± 22.19 cm²/(V s) on average). In addition, due to the high-capacitance EDL formed by electrolyte gating, the CuI TFTs exhibited a low operation voltage below 0.5 V (V_th = -0.045 V) and a high ON current level of 0.7 mA with an ON/OFF ratio of 1.52 × 10³. We also evaluated the operational stabilities of CuI TFTs and the devices showed 80% retention under electrical/mechanical stress. All the active layers of the transistors were fabricated by solution processes at low temperatures (<100 °C), indicating their potential use for flexible, wearable, and high-performance electronic applications.

Ion buffering and interface charge enable high performance electronics with organic electrochemical transistors

Organic electrochemical transistors rely on ionic-electronic volumetric interaction to provide a seamless interface between biology and electronics with outstanding signal amplification. Despite their huge potential, further progress is limited owing to the lack of understanding of the device fundamentals. Here, we investigate organic electrochemical transistors in a wide range of experimental conditions by combining electrical analyses and device modeling. We show that the measurements can be quantitatively explained by nanoscale ionic-electronic charge interaction, giving rise to ion buffering and interface charge compensation. The investigation systematically explains and unifies a wide range of experiments, providing the rationale for the development of high-performance electronics. Unipolar inverters — universal building blocks for electronics — with gain larger than 100 are demonstrated. This is the highest gain ever reported, enabling the design of devices and circuits with enhanced performance and opening opportunities for the next-generation integrated bioelectronics and neuromorphic computing.

The rationale design of optimized organic electrochemical transistors (OECTs) for next-generation bioelectronics requires further exploration of the underlying device physics. Here, the authors report the role of ionic-electronic charge interactions on OECTs and high-performance unipolar inverters.