1
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Wu R, Hao J, Wang Y. Recent Advances in Engineering of 2D Layered Metal Chalcogenides for Resistive-Type Gas Sensor. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2404821. [PMID: 39344560 DOI: 10.1002/smll.202404821] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/09/2024] [Revised: 08/22/2024] [Indexed: 10/01/2024]
Abstract
2D nanomaterials have triggered widespread attention in sensing applications. Especially for 2D layered metal chalcogenides (LMCs), the unique semiconducting properties and high surface area endow them with great potential for gas sensors. The assembly of 2D LMCs with guest species is an effective functionalization method to produce the synergistic effects of hybridization for greatly enhancing the gas-sensing properties. This review starts with the synthetic techniques, sensing properties, and principles, and then comprehensively compiles the advanced achievements of the pristine 2D LMCs gas sensors. Key advances in the development of the functionalization of 2D LMCs for enhancing gas-sensing properties are categorized according to the spatial architectures. It is systematically discussed in three aspects: surface, lattice, and interlayer, to comprehend the benefits of the functionalized 2D LMCs from surface chemical effect, electronic properties, and structure features. The challenges and outlooks for developing high-performance 2D LMCs-based gas sensors are also proposed.
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Affiliation(s)
- Ruozhen Wu
- Fujian Provincial Collaborative Innovation Center of Bamboo Ecological Industry, College of Ecology and Resources Engineering, Wuyi University, Wuyishan, 354300, P. R. China
- Department of Polymer Materials and Engineering, College of Ecology and Resources Engineering, Wuyi University, Wuyishan, 354300, P. R. China
| | - Juanyuan Hao
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, P. R. China
| | - You Wang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, P. R. China
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2
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Xie Y, Zhang Z, Meng F, Huo S, Hu X, Niu P, Wu E. Anisotropic sensing based on single ReS 2flake for VOCs discrimination. NANOTECHNOLOGY 2024; 35:305203. [PMID: 38651768 DOI: 10.1088/1361-6528/ad41da] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/07/2023] [Accepted: 04/08/2024] [Indexed: 04/25/2024]
Abstract
Selective and sensitive detection of volatile organic compounds (VOCs) holds paramount importance in real-world applications. This study proposes an innovative approach utilizing a single ReS2field-effect transistor (FET) characterized by distinct in-plane anisotropy, specifically tailored for VOC recognition. The unique responses of ReS2, endowed with robust in-plane anisotropic properties, demonstrate significant difference along thea-axis andb-axis directions when exposed to four kinds of VOCs: acetone, methanol, ethanol, and IPA. Remarkably, the responses of ReS2were significantly magnified under ultraviolet (UV) illumination, particularly in the case of acetone, where the response amplified by 10-15 times and the detection limit decreasing from 70 to 4 ppm compared to the dark conditions. Exploiting the discernible variances in responses along thea-axis andb-axis under both UV and dark conditions, the data points of acetone, ethanol, methanol and IPA gases were clearly separated in the principal component space without any overlap through principal component analysis, indicating that the single ReS2FET has a high ability to distinguish various gas species. The exploration of anisotropic sensing materials and light excitation strategies can be applied to a broad range of sensing platforms based on two-dimensional materials for practical applications.
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Affiliation(s)
- Yuan Xie
- School of Electronics and Information Engineering, Tiangong University, No. 399 BinShuiXi Road, Tianjin, 300387, People's Republic of China
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Zhe Zhang
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Fanying Meng
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Shida Huo
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Xiaodong Hu
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Pingjuan Niu
- School of Electronics and Information Engineering, Tiangong University, No. 399 BinShuiXi Road, Tianjin, 300387, People's Republic of China
| | - Enxiu Wu
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
- State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem And Information Technology, No. 865 Changning Road, Shanghai, 200050, People's Republic of China
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3
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Mohammadzadeh MR, Hasani A, Jaferzadeh K, Fawzy M, De Silva T, Abnavi A, Ahmadi R, Ghanbari H, Askar A, Kabir F, Rajapakse R, Adachi MM. Unique Photoactivated Time-Resolved Response in 2D GeS for Selective Detection of Volatile Organic Compounds. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2205458. [PMID: 36658730 PMCID: PMC10074048 DOI: 10.1002/advs.202205458] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/20/2022] [Revised: 12/19/2022] [Indexed: 06/17/2023]
Abstract
Volatile organic compounds (VOCs) sensors have a broad range of applications including healthcare, process control, and air quality analysis. There are a variety of techniques for detecting VOCs such as optical, acoustic, electrochemical, and chemiresistive sensors. However, existing commercial VOC detectors have drawbacks such as high cost, large size, or lack of selectivity. Herein, a new sensing mechanism is demonstrated based on surface interactions between VOC and UV-excited 2D germanium sulfide (GeS), which provides an effective solution to distinguish VOCs. The GeS sensor shows a unique time-resolved electrical response to different VOC species, facilitating identification and qualitative measurement of VOCs. Moreover, machine learning is utilized to distinguish VOC species from their dynamic response via visualization with high accuracy. The proposed approach demonstrates the potential of 2D GeS as a promising candidate for selective miniature VOCs sensors in critical applications such as non-invasive diagnosis of diseases and health monitoring.
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Affiliation(s)
| | - Amirhossein Hasani
- School of Engineering ScienceSimon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada
| | - Keyvan Jaferzadeh
- Department of Computer Science and Software EngineeringConcordia UniversityMontrealQuebecH3G 1M8Canada
| | - Mirette Fawzy
- Department of PhysicsSimon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada
| | - Thushani De Silva
- School of Engineering ScienceSimon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada
| | - Amin Abnavi
- School of Engineering ScienceSimon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada
| | - Ribwar Ahmadi
- School of Engineering ScienceSimon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada
| | - Hamidreza Ghanbari
- School of Engineering ScienceSimon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada
| | - Abdelrahman Askar
- School of Engineering ScienceSimon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada
| | - Fahmid Kabir
- School of Engineering ScienceSimon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada
| | - R.K.N.D. Rajapakse
- School of Engineering ScienceSimon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada
| | - Michael M. Adachi
- School of Engineering ScienceSimon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada
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4
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Paghi A, Mariani S, Barillaro G. 1D and 2D Field Effect Transistors in Gas Sensing: A Comprehensive Review. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2206100. [PMID: 36703509 DOI: 10.1002/smll.202206100] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/05/2022] [Revised: 12/04/2022] [Indexed: 06/18/2023]
Abstract
Rapid progress in the synthesis and fundamental understanding of 1D and 2D materials have solicited the incorporation of these nanomaterials into sensor architectures, especially field effect transistors (FETs), for the monitoring of gas and vapor in environmental, food quality, and healthcare applications. Yet, several challenges have remained unaddressed toward the fabrication of 1D and 2D FET gas sensors for real-field applications, which are related to properties, synthesis, and integration of 1D and 2D materials into the transistor architecture. This review paper encompasses the whole assortment of 1D-i.e., metal oxide semiconductors (MOXs), silicon nanowires (SiNWs), carbon nanotubes (CNTs)-and 2D-i.e., graphene, transition metal dichalcogenides (TMD), phosphorene-materials used in FET gas sensors, critically dissecting how the material synthesis, surface functionalization, and transistor fabrication impact on electrical versus sensing properties of these devices. Eventually, pros and cons of 1D and 2D FETs for gas and vapor sensing applications are discussed, pointing out weakness and highlighting future directions.
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Affiliation(s)
- Alessandro Paghi
- Dipartimento di Ingegneria dell'Informazione, via G. Caruso 16, Pisa, 56122, Italy
| | - Stefano Mariani
- Dipartimento di Ingegneria dell'Informazione, via G. Caruso 16, Pisa, 56122, Italy
| | - Giuseppe Barillaro
- Dipartimento di Ingegneria dell'Informazione, via G. Caruso 16, Pisa, 56122, Italy
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5
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2D Materials towards sensing technology: From fundamentals to applications. SENSING AND BIO-SENSING RESEARCH 2022. [DOI: 10.1016/j.sbsr.2022.100540] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Submit a Manuscript] [Subscribe] [Scholar Register] [Indexed: 11/06/2022] Open
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6
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Guo M, Brewster Ii JT, Zhang H, Zhao Y, Zhao Y. Challenges and Opportunities of Chemiresistors Based on Microelectromechanical Systems for Chemical Olfaction. ACS NANO 2022; 16:17778-17801. [PMID: 36355033 DOI: 10.1021/acsnano.2c08650] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Microelectromechanical-system (MEMS)-based semiconductor gas sensors are considered one of the fastest-growing, interdisciplinary high technologies during the post-Moore era. Modern advancements within this arena include wearable electronics, Internet of Things, and artificial brain-inspired intelligence, among other modalities, thus bringing opportunities to drive MEMS-based gas sensors with higher performance, lower costs, and wider applicability. However, the high demand for miniature and micropower sensors with unified processes on a single chip imposes great challenges. This review focuses on recent developments and pitfalls in MEMS-based micro- and nanoscale gas sensors and details future trends. We also cover the background of the topic, seminal efforts, current applications and challenges, and opportunities for next-generation systems.
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Affiliation(s)
- Mengya Guo
- School of Chemical Engineering & Technology, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China
| | - James T Brewster Ii
- Division of Medicinal Chemistry, Pfizer Boulder Research & Development, Boulder, Colorado80301, United States
| | - Huacheng Zhang
- School of Chemical Engineering & Technology, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China
- School of Chemistry, Chemical Engineering and Biotechnology, Nanyang Technological University, 21 Nanyang Link, Singapore637371, Singapore
| | - Yuxin Zhao
- School of Chemical Engineering & Technology, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China
| | - Yanli Zhao
- School of Chemistry, Chemical Engineering and Biotechnology, Nanyang Technological University, 21 Nanyang Link, Singapore637371, Singapore
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7
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Wang J, Zeng W, Zhou Q. Research status of gas sensing performance of MoTe2-based gas sensors: A mini review. Front Chem 2022; 10:950974. [PMID: 35936095 PMCID: PMC9354782 DOI: 10.3389/fchem.2022.950974] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/24/2022] [Accepted: 07/05/2022] [Indexed: 11/13/2022] Open
Abstract
Transition metal dichalcogenides (TMDs) have been widely explored for their excellent gas sensing properties, especially high sensitivity and stability at room temperature. MoTe2 exhibits good sensitivity and selectivity to some nitrogen-containing gases (i.e., NO2, NH3) and has received extensive attention in gas sensing. In addition, increasingly complex production environments place demands on high-quality gas sensors. Therefore, worldwide efforts are devoted to designing and manufacturing MoTe2-based gas sensors with faster response and recovery speed. This paper summarizes the research progress of MoTe2-based gas sensing, focuses on the practical measures to improve the response and recovery speed of MoTe2-based sensors, and discusses the mechanism. This provides guidance for exploring higher performance MoTe2 sensors.
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Affiliation(s)
- Jingyu Wang
- College of Materials Science and Engineering, Chongqing University, Chongqing, China
| | - Wen Zeng
- College of Materials Science and Engineering, Chongqing University, Chongqing, China
- *Correspondence: Wen Zeng, ; Qu Zhou,
| | - Qu Zhou
- College of Engineering and Technology, Southwest University, Chongqing, China
- *Correspondence: Wen Zeng, ; Qu Zhou,
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8
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Khan MA, Khan MF, Rehman S, Patil H, Dastgeer G, Ko BM, Eom J. The non-volatile electrostatic doping effect in MoTe 2 field-effect transistors controlled by hexagonal boron nitride and a metal gate. Sci Rep 2022; 12:12085. [PMID: 35840642 PMCID: PMC9287407 DOI: 10.1038/s41598-022-16298-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/18/2022] [Accepted: 07/07/2022] [Indexed: 11/09/2022] Open
Abstract
The electrical and optical properties of transition metal dichalcogenides (TMDs) can be effectively modulated by tuning their Fermi levels. To develop a carrier-selectable optoelectronic device, we investigated intrinsically p-type MoTe2, which can be changed to n-type by charging a hexagonal boron nitride (h-BN) substrate through the application of a writing voltage using a metal gate under deep ultraviolet light. The n-type part of MoTe2 can be obtained locally using the metal gate pattern, whereas the other parts remain p-type. Furthermore, we can control the transition rate to n-type by applying a different writing voltage (i.e., − 2 to − 10 V), where the n-type characteristics become saturated beyond a certain writing voltage. Thus, MoTe2 was electrostatically doped by a charged h-BN substrate, and it was found that a thicker h-BN substrate was more efficiently photocharged than a thinner one. We also fabricated a p–n diode using a 0.8 nm-thick MoTe2 flake on a 167 nm-thick h-BN substrate, which showed a high rectification ratio of ~ 10−4. Our observations pave the way for expanding the application of TMD-based FETs to diode rectification devices, along with optoelectronic applications.
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Affiliation(s)
- Muhammad Asghar Khan
- Department of Physics and Astronomy, and Graphene Research Institute-Texas Photonics Center International Research Center (GRI-TPC IRC), Sejong University, Seoul, 05006, Korea
| | | | - Shania Rehman
- Department of Electrical Engineering, Sejong University, Seoul, 05006, Korea.,Department of Convergence Engineering for Intelligent Drone, Sejong University, Seoul, 05006, Korea
| | - Harshada Patil
- Department of Electrical Engineering, Sejong University, Seoul, 05006, Korea.,Department of Convergence Engineering for Intelligent Drone, Sejong University, Seoul, 05006, Korea
| | - Ghulam Dastgeer
- Department of Physics and Astronomy, and Graphene Research Institute-Texas Photonics Center International Research Center (GRI-TPC IRC), Sejong University, Seoul, 05006, Korea
| | - Byung Min Ko
- Department of Physics and Astronomy, and Graphene Research Institute-Texas Photonics Center International Research Center (GRI-TPC IRC), Sejong University, Seoul, 05006, Korea
| | - Jonghwa Eom
- Department of Physics and Astronomy, and Graphene Research Institute-Texas Photonics Center International Research Center (GRI-TPC IRC), Sejong University, Seoul, 05006, Korea.
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9
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Choi HK, Park J, Gwon OH, Kim JY, Kang SJ, Byun HR, Shin B, Jang SG, Kim HS, Yu YJ. Gate-Tuned Gas Molecule Sensitivity of a Two-Dimensional Semiconductor. ACS APPLIED MATERIALS & INTERFACES 2022; 14:23617-23623. [PMID: 35549073 DOI: 10.1021/acsami.2c02380] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
In this work, we develop a gate-tunable gas sensor based on a MoS2/hBN heterostructure field effect transistor. Through experimental measurements and numerical simulations, we systematically reveal a principle that relates the concentration of the target gas and sensing signals (ΔI/I0) as a function of gate bias. Because a linear relationship between ΔI/I0 and the gas concentration guarantees reliable sensor operation, the optimal gate bias condition for linearity was investigated. Taking NO2 and NH3 as target molecules, it is clarified that the bias condition greatly depends on the electron accepting/donating nature of the gas. The effects of the bandgap and polarity of the transition metal dichalcogenides (TMDC) channel are also discussed. In order to achieve linearly increasing signals that are stable with respect to the gas concentration, a sufficiently large VBG within VBG > 0 is required. We expect this work will shed light on a way to precisely design reliable semiconducting gas sensors based on the characteristics of TMDC and target gas molecules.
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Affiliation(s)
- Hong Kyw Choi
- Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon 34129, Korea
| | - Jaesung Park
- Korea Research Institute of Standards and Science (KRISS), Daejeon 305-340, Korea
| | - Oh Hun Gwon
- Department of Physics, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon, 34134, Korea
| | - Jong Yun Kim
- Institute of Quantum Systems, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon, 34134, Korea
| | - Seok-Ju Kang
- Institute of Quantum Systems, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon, 34134, Korea
| | - Hye Ryung Byun
- Institute of Quantum Systems, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon, 34134, Korea
| | - BeomKyu Shin
- Department of Physics, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon, 34134, Korea
| | - Seo Gyun Jang
- Department of Physics, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon, 34134, Korea
| | - Han Seul Kim
- Center for Supercomputing Applications, National Institute of Supercomputing and Networking, Korea Institute of Science and Technology Information (KISTI), Daejeon 34141, Korea
| | - Young-Jun Yu
- Department of Physics, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon, 34134, Korea
- Institute of Quantum Systems, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon, 34134, Korea
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10
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Ma Z, Wang Z, Gao L. Light-Assisted Enhancement of Gas Sensing Property for Micro-Nanostructure Electronic Device: A Mini Review. Front Chem 2022; 9:811074. [PMID: 35004627 PMCID: PMC8740134 DOI: 10.3389/fchem.2021.811074] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/08/2021] [Accepted: 11/24/2021] [Indexed: 11/22/2022] Open
Abstract
In recent years, gas sensing electronic devices have always attracted wide attention in the field of environment, industry, aviation and others. In order to improve the gas sensing properties, many micro- and nano-fabrication technologies have been proposed and investigated to develop high-performance gas sensing devices. It is worth noting that light irradiation is an effective strategy to enhance gas sensitivity, shorten the response and recovery time, reduce operating temperature. In this review, firstly, the latest research advances of gas sensors based on different micro-nanostructure materials under UV light and visible light activation is introduced. Then, the gas sensing mechanism of light-assisted gas sensor is discussed in detail. Finally, this review describes the present application of gas sensors with improved properties under light activation assisted conditions and the perspective of their applications.
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Affiliation(s)
- Zongtao Ma
- State Key Laboratory of Reliability and Intelligence Electrical Equipment, Hebei University of Technology, Tianjin, China
| | - Ziying Wang
- National Engineering Research Center for Technological Innovation Method and Tool, School of Mechanical Engineering, Hebei University of Technology, Tianjin, China.,School of Electronics and Information Engineering, Hebei University of Technology, Tianjin, China
| | - Lingxiao Gao
- National Engineering Research Center for Technological Innovation Method and Tool, School of Mechanical Engineering, Hebei University of Technology, Tianjin, China.,School of Electronics and Information Engineering, Hebei University of Technology, Tianjin, China
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11
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Dixit K, Fardindoost S, Ravishankara A, Tasnim N, Hoorfar M. Exhaled Breath Analysis for Diabetes Diagnosis and Monitoring: Relevance, Challenges and Possibilities. BIOSENSORS 2021; 11:476. [PMID: 34940233 PMCID: PMC8699302 DOI: 10.3390/bios11120476] [Citation(s) in RCA: 31] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/15/2021] [Revised: 11/18/2021] [Accepted: 11/20/2021] [Indexed: 05/15/2023]
Abstract
With the global population prevalence of diabetes surpassing 463 million cases in 2019 and diabetes leading to millions of deaths each year, there is a critical need for feasible, rapid, and non-invasive methodologies for continuous blood glucose monitoring in contrast to the current procedures that are either invasive, complicated, or expensive. Breath analysis is a viable methodology for non-invasive diabetes management owing to its potential for multiple disease diagnoses, the nominal requirement of sample processing, and immense sample accessibility; however, the development of functional commercial sensors is challenging due to the low concentration of volatile organic compounds (VOCs) present in exhaled breath and the confounding factors influencing the exhaled breath profile. Given the complexity of the topic and the skyrocketing spread of diabetes, a multifarious review of exhaled breath analysis for diabetes monitoring is essential to track the technological progress in the field and comprehend the obstacles in developing a breath analysis-based diabetes management system. In this review, we consolidate the relevance of exhaled breath analysis through a critical assessment of current technologies and recent advancements in sensing methods to address the shortcomings associated with blood glucose monitoring. We provide a detailed assessment of the intricacies involved in the development of non-invasive diabetes monitoring devices. In addition, we spotlight the need to consider breath biomarker clusters as opposed to standalone biomarkers for the clinical applicability of exhaled breath monitoring. We present potential VOC clusters suitable for diabetes management and highlight the recent buildout of breath sensing methodologies, focusing on novel sensing materials and transduction mechanisms. Finally, we portray a multifaceted comparison of exhaled breath analysis for diabetes monitoring and highlight remaining challenges on the path to realizing breath analysis as a non-invasive healthcare approach.
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Affiliation(s)
- Kaushiki Dixit
- Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology Kharagpur, Kharagpur 721302, India;
- School of Engineering, University of British Columbia, Kelowna, BC V1V 1V7, Canada; (S.F.); (A.R.); (N.T.)
| | - Somayeh Fardindoost
- School of Engineering, University of British Columbia, Kelowna, BC V1V 1V7, Canada; (S.F.); (A.R.); (N.T.)
| | - Adithya Ravishankara
- School of Engineering, University of British Columbia, Kelowna, BC V1V 1V7, Canada; (S.F.); (A.R.); (N.T.)
| | - Nishat Tasnim
- School of Engineering, University of British Columbia, Kelowna, BC V1V 1V7, Canada; (S.F.); (A.R.); (N.T.)
- Faculty of Engineering and Computer Science, University of Victoria, Victoria, BC V8W 2Y2, Canada
| | - Mina Hoorfar
- School of Engineering, University of British Columbia, Kelowna, BC V1V 1V7, Canada; (S.F.); (A.R.); (N.T.)
- Faculty of Engineering and Computer Science, University of Victoria, Victoria, BC V8W 2Y2, Canada
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12
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Liu W, Zeng J, Gao Y, Li H, Rooij NFD, Umar A, Algarni H, Wang Y, Zhou G. Charge transfer driven by redox dye molecules on graphene nanosheets for room-temperature gas sensing. NANOSCALE 2021; 13:18596-18607. [PMID: 34730592 DOI: 10.1039/d1nr04641a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Special functional groups to modify the surface of graphene have received much attention since they enable the charge transfer enhancement, thus realizing gas-sensing at room temperature. In this work, three typical redox dye molecules, methylene blue (MB), indigo carmine (IC) and anthraquinone-2-sulfonate (AQS), were selected to be supramolecularly assembled with reduced graphene oxide (rGO), respectively. Remarkably, three graphene-based materials AQS-rGO (response = 3.2, response time = 400 s), IC-rGO (response = 4.3, response time = 300 s) and MB-rGO (response = 7.1, response time = 100 s) exhibited excellent sensitivity and short response time toward 10 ppm NO2 at room temperature. The corresponding NO2 sensing mechanism of the obtained materials was further investigated by cyclic voltammetry (CV) measurements. CV was conducted to measure the anodic peak potential (Epa) of three redox dyes. Interestingly, it is obvious that the Epa values were positively correlated with the gas sensitivity and response time of the three materials. To explore the mechanism, UV-vis spectroscopy was adopted to analyze the lowest unoccupied molecular orbitals (LUMOs) of three redox dye molecules. The results show that the oxidation abilities of three redox dyes were also positively correlated with the gas sensitivity and response time of three corresponding graphene-based materials.
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Affiliation(s)
- Wenbo Liu
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China.
- National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China
| | - Junwei Zeng
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China.
- National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China
| | - Yixun Gao
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China.
- National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China
| | - Hao Li
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China.
- National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China
| | - Nicolaas Frans de Rooij
- National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China
| | - Ahmad Umar
- Promising Centre for Sensors and Electronic Devices, Department of Chemistry, Faculty of Science and Arts, Najran University, Najran, 11001, Kingdom of Saudi Arabia
| | - Hamed Algarni
- Department of Physics, King Khalid University, Abha, 61421, Kingdom of Saudi Arabia
| | - Yao Wang
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China.
- National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China
| | - Guofu Zhou
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China.
- National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China
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13
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Sun Q, Li Y, Hao J, Zheng S, Zhang T, Wang T, Wu R, Fang H, Wang Y. Increased Active Sites and Charge Transfer in the SnS 2/TiO 2 Heterostructure for Visible-Light-Assisted NO 2 Sensing. ACS APPLIED MATERIALS & INTERFACES 2021; 13:54152-54161. [PMID: 34734688 DOI: 10.1021/acsami.1c16095] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Tin disulfide (SnS2) has been extensively researched as a promising sensing material due to its large electronegativity, suitable band gap, earth abundance, and nontoxicity. However, the poor conductivity and slow response/recovery speed at room temperature greatly hinder its application in high-performance practical gas sensors. Herein, to promote the study of SnS2-based gas sensors, a hierarchical SnS2/TiO2 heterostructure was synthesized and used as a sensing material to detect NO2 with the help of light illumination. Through the synergistic effect of the SnS2/TiO2 heterostructure and 525 nm light activation, the NO2 sensor based on the SnS2/TiO2 heterostructure exhibited a high response factor of 526% toward 1 ppm NO2 and a short response/recovery time of 43/102 s at room temperature due to the enhanced charge transfer and increased adsorption sites, which was superior to the vast majority of other NO2 sensors. An obvious decrease in the surface-adsorbed oxygen content based on the X-ray photoelectron spectroscopy measurement further confirmed that light illumination was helpful to clear the surface of SnS2/TiO2 and thus increased active sites for NO2 sensing. In addition, a flexible SnS2/TiO2 sensor was also fabricated to confirm its potential application in portable and wearable devices.
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Affiliation(s)
- Quan Sun
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, P. R. China
| | - Yanqiu Li
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, P. R. China
| | - Juanyuan Hao
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, P. R. China
- Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Ministry of Education, Harbin 150001, P. R. China
| | - Shengliang Zheng
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, P. R. China
| | - Tianyue Zhang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, P. R. China
| | - Tingting Wang
- School of Chemical Engineering and Chemistry, Harbin Institute of Technology, Harbin 150001, P. R. China
| | - Ruozhen Wu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, P. R. China
| | - Haitao Fang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, P. R. China
| | - You Wang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, P. R. China
- Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Ministry of Education, Harbin 150001, P. R. China
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14
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Adamu BI, Chen P, Chu W. Role of nanostructuring of sensing materials in performance of electrical gas sensors by combining with extra strategies. NANO EXPRESS 2021. [DOI: 10.1088/2632-959x/ac3636] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
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15
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Hermawan A, Septiani NLW, Taufik A, Yuliarto B, Yin S. Advanced Strategies to Improve Performances of Molybdenum-Based Gas Sensors. NANO-MICRO LETTERS 2021; 13:207. [PMID: 34633560 PMCID: PMC8505593 DOI: 10.1007/s40820-021-00724-1] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/13/2021] [Accepted: 08/22/2021] [Indexed: 05/29/2023]
Abstract
Molybdenum-based materials have been intensively investigated for high-performance gas sensor applications. Particularly, molybdenum oxides and dichalcogenides nanostructures have been widely examined due to their tunable structural and physicochemical properties that meet sensor requirements. These materials have good durability, are naturally abundant, low cost, and have facile preparation, allowing scalable fabrication to fulfill the growing demand of susceptible sensor devices. Significant advances have been made in recent decades to design and fabricate various molybdenum oxides- and dichalcogenides-based sensing materials, though it is still challenging to achieve high performances. Therefore, many experimental and theoretical investigations have been devoted to exploring suitable approaches which can significantly enhance their gas sensing properties. This review comprehensively examines recent advanced strategies to improve the nanostructured molybdenum-based material performance for detecting harmful pollutants, dangerous gases, or even exhaled breath monitoring. The summary and future challenges to advance their gas sensing performances will also be presented.
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Affiliation(s)
- Angga Hermawan
- Faculty of Textile Science and Engineering, Shinshu University, 3-15-1 Tokida, Ueda, Nagano, 386-8567, Japan
- Institute of Multidisciplinary Research for Advanced Material (IMRAM), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi, 980-8577, Japan
| | - Ni Luh Wulan Septiani
- Advanced Functional Materials Research Group, Institut Teknologi Bandung, Bandung, 40132, Indonesia
- Research Center for Nanosciences and Nanotechnology (RCNN), Institut Teknologi Bandung, Bandung, 40132, Indonesia
| | - Ardiansyah Taufik
- Institute of Multidisciplinary Research for Advanced Material (IMRAM), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi, 980-8577, Japan
| | - Brian Yuliarto
- Advanced Functional Materials Research Group, Institut Teknologi Bandung, Bandung, 40132, Indonesia.
- Research Center for Nanosciences and Nanotechnology (RCNN), Institut Teknologi Bandung, Bandung, 40132, Indonesia.
| | - Shu Yin
- Institute of Multidisciplinary Research for Advanced Material (IMRAM), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi, 980-8577, Japan.
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16
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Zulkefli A, Mukherjee B, Sahara R, Hayakawa R, Iwasaki T, Wakayama Y, Nakaharai S. Enhanced Selectivity in Volatile Organic Compound Gas Sensors Based on ReS 2-FETs under Light-Assisted and Gate-Bias Tunable Operation. ACS APPLIED MATERIALS & INTERFACES 2021; 13:43030-43038. [PMID: 34463490 DOI: 10.1021/acsami.1c10054] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Using a single-device two-dimensional (2D) rhenium disulfide (ReS2) field-effect transistor (FET) with enhanced gas species selectivity by light illumination, we reported a selective and sensitive detection of volatile organic compound (VOC) gases. 2D materials have the advantage of a high surface-area-to-volume ratio for high sensitivity to molecules attached to the surface and tunable carrier concentration through field-effect control from the back-gate of the channel, while keeping the top surface open to the air for chemical sensing. In addition to these advantages, ReS2 has a direct band gap also in multilayer cases, which sets it apart from other transition-metal dichalcogenides (TMDCs). We take advantage of the effective response of ReS2 to light illumination to improve the selectivity and gas-sensing efficiency of a ReS2-FET device. We found that light illumination modulates the drain current response in a ReS2-FET to adsorbed molecules, and the sensing activity differs depending on the gas species used, such as acetone, ethanol, and methanol. Furthermore, wavelength and carrier density rely on certain variations in light-modulated sensing behaviors for each chemical. The device will distinguish the gas concentration in a mixture of VOCs using the differences induced by light illumination, enhancing the selectivity of the sensor device. Our results shed new light on the sensing technologies for realizing a large-scale sensor network in the Internet-of-Things era.
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Affiliation(s)
- Amir Zulkefli
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
- Department of Chemistry and Biochemistry, Graduate School of Engineering, Kyushu University, 744 Moto-oka, Nishi-ku, Fukuoka 819-0395, Japan
| | - Bablu Mukherjee
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Ryoji Sahara
- Research Center for Structural Materials, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
| | - Ryoma Hayakawa
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Takuya Iwasaki
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Yutaka Wakayama
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
- Department of Chemistry and Biochemistry, Graduate School of Engineering, Kyushu University, 744 Moto-oka, Nishi-ku, Fukuoka 819-0395, Japan
| | - Shu Nakaharai
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Zhang P, Xiao Y, Zhang J, Liu B, Ma X, Wang Y. Highly sensitive gas sensing platforms based on field effect Transistor-A review. Anal Chim Acta 2021; 1172:338575. [PMID: 34119019 DOI: 10.1016/j.aca.2021.338575] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/16/2020] [Revised: 04/21/2021] [Accepted: 04/22/2021] [Indexed: 01/08/2023]
Abstract
Highly selective, sensitive and fast gas sensing has attracted increasing attention in the fields of environmental protection, industrial production, personal safety as well as medical diagnostics. Field effect transistor (FET) sensors have been extensively investigated in gas sensing fields due to their small size, high sensitivity, high reliability and low energy consumption. This comprehensive review aims to discuss the recent advances in FET gas sensors based on materials such as carbon nanotubes, silicon carbide, silicon, metal oxides-, graphene-, transition metal dichalcogenides- and 2-dimensional black phosphorus. We first introduce different types of sensor structures and elaborate the gas-sensing mechanisms. Then, we describe the optimizing strategies for sensing performances, response parameters, FET based dual-mode sensors and FET based logic circuit sensors. Moreover, we present the key advances of the above materials in gas sensing performances. Meanwhile, shortcomings of such materials are also discussed and the future development of this field is proposed in this review.
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Affiliation(s)
- Pan Zhang
- School of Science, Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin, 300072, PR China.
| | - Yin Xiao
- School of Chemical Engineering and Technology, Tianjin Engineering Research Center Functional Fine Chemical, Tianjin University, Tianjin, 300072, PR China.
| | - Jingjing Zhang
- School of Science, Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin, 300072, PR China.
| | - Bingjie Liu
- School of Chemical Engineering and Technology, Tianjin Engineering Research Center Functional Fine Chemical, Tianjin University, Tianjin, 300072, PR China.
| | - Xiaofei Ma
- School of Science, Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin, 300072, PR China.
| | - Yong Wang
- School of Science, Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin, 300072, PR China.
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18
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Cao J, Chen Q, Wang X, Zhang Q, Yu HD, Huang X, Huang W. Recent Development of Gas Sensing Platforms Based on 2D Atomic Crystals. RESEARCH (WASHINGTON, D.C.) 2021; 2021:9863038. [PMID: 33982003 PMCID: PMC8086560 DOI: 10.34133/2021/9863038] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/13/2020] [Accepted: 03/22/2021] [Indexed: 11/24/2022]
Abstract
Sensors, capable of detecting trace amounts of gas molecules or volatile organic compounds (VOCs), are in great demand for environmental monitoring, food safety, health diagnostics, and national defense. In the era of the Internet of Things (IoT) and big data, the requirements on gas sensors, in addition to sensitivity and selectivity, have been increasingly placed on sensor simplicity, room temperature operation, ease for integration, and flexibility. The key to meet these requirements is the development of high-performance gas sensing materials. Two-dimensional (2D) atomic crystals, emerged after graphene, have demonstrated a number of attractive properties that are beneficial to gas sensing, such as the versatile and tunable electronic/optoelectronic properties of metal chalcogenides (MCs), the rich surface chemistry and good conductivity of MXenes, and the anisotropic structural and electronic properties of black phosphorus (BP). While most gas sensors based on 2D atomic crystals have been incorporated in the setup of a chemiresistor, field-effect transistor (FET), quartz crystal microbalance (QCM), or optical fiber, their working principles that involve gas adsorption, charge transfer, surface reaction, mass loading, and/or change of the refractive index vary from material to material. Understanding the gas-solid interaction and the subsequent signal transduction pathways is essential not only for improving the performance of existing sensing materials but also for searching new and advanced ones. In this review, we aim to provide an overview of the recent development of gas sensors based on various 2D atomic crystals from both the experimental and theoretical investigations. We will particularly focus on the sensing mechanisms and working principles of the related sensors, as well as approaches to enhance their sensing performances. Finally, we summarize the whole article and provide future perspectives for the development of gas sensors with 2D materials.
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Affiliation(s)
- Jiacheng Cao
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China
| | - Qian Chen
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China
| | - Xiaoshan Wang
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China
| | - Qiang Zhang
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China
| | - Hai-Dong Yu
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211800, China
| | - Xiao Huang
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211800, China
| | - Wei Huang
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211800, China
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19
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Kim S, Brady J, Al-Badani F, Yu S, Hart J, Jung S, Tran TT, Myung NV. Nanoengineering Approaches Toward Artificial Nose. Front Chem 2021; 9:629329. [PMID: 33681147 PMCID: PMC7935515 DOI: 10.3389/fchem.2021.629329] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/14/2020] [Accepted: 01/05/2021] [Indexed: 12/16/2022] Open
Abstract
Significant scientific efforts have been made to mimic and potentially supersede the mammalian nose using artificial noses based on arrays of individual cross-sensitive gas sensors over the past couple decades. To this end, thousands of research articles have been published regarding the design of gas sensor arrays to function as artificial noses. Nanoengineered materials possessing high surface area for enhanced reaction kinetics and uniquely tunable optical, electronic, and optoelectronic properties have been extensively used as gas sensing materials in single gas sensors and sensor arrays. Therefore, nanoengineered materials address some of the shortcomings in sensitivity and selectivity inherent in microscale and macroscale materials for chemical sensors. In this article, the fundamental gas sensing mechanisms are briefly reviewed for each material class and sensing modality (electrical, optical, optoelectronic), followed by a survey and review of the various strategies for engineering or functionalizing these nanomaterials to improve their gas sensing selectivity, sensitivity and other measures of gas sensing performance. Specifically, one major focus of this review is on nanoscale materials and nanoengineering approaches for semiconducting metal oxides, transition metal dichalcogenides, carbonaceous nanomaterials, conducting polymers, and others as used in single gas sensors or sensor arrays for electrical sensing modality. Additionally, this review discusses the various nano-enabled techniques and materials of optical gas detection modality, including photonic crystals, surface plasmonic sensing, and nanoscale waveguides. Strategies for improving or tuning the sensitivity and selectivity of materials toward different gases are given priority due to the importance of having cross-sensitivity and selectivity toward various analytes in designing an effective artificial nose. Furthermore, optoelectrical sensing, which has to date not served as a common sensing modality, is also reviewed to highlight potential research directions. We close with some perspective on the future development of artificial noses which utilize optical and electrical sensing modalities, with additional focus on the less researched optoelectronic sensing modality.
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Affiliation(s)
- Sanggon Kim
- Department of Chemical and Environmental Engineering, University of California-Riverside, Riverside, CA, United States
| | - Jacob Brady
- Department of Chemical and Environmental Engineering, University of California-Riverside, Riverside, CA, United States
| | - Faraj Al-Badani
- Department of Chemical and Environmental Engineering, University of California-Riverside, Riverside, CA, United States
| | - Sooyoun Yu
- Department of Chemical and Biomolecular Engineering, University of Notre Dame, Notre Dame, IN, United States
| | - Joseph Hart
- Department of Chemical and Biomolecular Engineering, University of Notre Dame, Notre Dame, IN, United States
| | - Sungyong Jung
- Department of Electrical Engineering, University of Texas at Arlington, Arlington, TX, United States
| | - Thien-Toan Tran
- Department of Chemical and Biomolecular Engineering, University of Notre Dame, Notre Dame, IN, United States
| | - Nosang V. Myung
- Department of Chemical and Environmental Engineering, University of California-Riverside, Riverside, CA, United States
- Department of Chemical and Biomolecular Engineering, University of Notre Dame, Notre Dame, IN, United States
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20
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Zhou L, Yu S, Yang Y, Li Q, Li T, Zhang D. Adsorption of gas molecules (NH 3, C 2H 6O, C 3H 6O, CO, H 2S) on a noble metal (Ag, Au, Pt, Pd, Ru)-doped MoSe 2 monolayer: a first-principles study. NEW J CHEM 2021. [DOI: 10.1039/d1nj01705e] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/21/2023]
Abstract
In this paper, the effects of five noble metal (Au, Pt, Pd, Ag, Ru)-doped MoSe2 on improving the gas sensing performance were predicted through density functional theory (DFT) based on first-principles.
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Affiliation(s)
- Lanjuan Zhou
- College of Control Science and Engineering
- China University of Petroleum (East China)
- Qingdao 266580
- China
| | - Sujing Yu
- College of Control Science and Engineering
- China University of Petroleum (East China)
- Qingdao 266580
- China
| | - Yan Yang
- College of Control Science and Engineering
- China University of Petroleum (East China)
- Qingdao 266580
- China
| | - Qi Li
- College of Control Science and Engineering
- China University of Petroleum (East China)
- Qingdao 266580
- China
| | - Tingting Li
- College of Control Science and Engineering
- China University of Petroleum (East China)
- Qingdao 266580
- China
| | - Dongzhi Zhang
- College of Control Science and Engineering
- China University of Petroleum (East China)
- Qingdao 266580
- China
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21
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Kumar R, Liu X, Zhang J, Kumar M. Room-Temperature Gas Sensors Under Photoactivation: From Metal Oxides to 2D Materials. NANO-MICRO LETTERS 2020; 12:164. [PMID: 34138159 PMCID: PMC7770837 DOI: 10.1007/s40820-020-00503-4] [Citation(s) in RCA: 85] [Impact Index Per Article: 21.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/15/2020] [Accepted: 07/15/2020] [Indexed: 05/21/2023]
Abstract
Room-temperature gas sensors have aroused great attention in current gas sensor technology because of deemed demand of cheap, low power consumption and portable sensors for rapidly growing Internet of things applications. As an important approach, light illumination has been exploited for room-temperature operation with improving gas sensor's attributes including sensitivity, speed and selectivity. This review provides an overview of the utilization of photoactivated nanomaterials in gas sensing field. First, recent advances in gas sensing of some exciting different nanostructures and hybrids of metal oxide semiconductors under light illumination are highlighted. Later, excellent gas sensing performance of emerging two-dimensional materials-based sensors under light illumination is discussed in details with proposed gas sensing mechanism. Originated impressive features from the interaction of photons with sensing materials are elucidated in the context of modulating sensing characteristics. Finally, the review concludes with key and constructive insights into current and future perspectives in the light-activated nanomaterials for optoelectronic gas sensor applications.
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Affiliation(s)
- Rahul Kumar
- Department of Electrical Engineering, Indian Institute of Technology Jodhpur, Jodhpur, 342037, India
| | - Xianghong Liu
- College of Physics, Center for Marine Observation and Communications, Qingdao University, Qingdao, 266071, People's Republic of China
- Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Nankai University, Tianjin, 300071, People's Republic of China
| | - Jun Zhang
- College of Physics, Center for Marine Observation and Communications, Qingdao University, Qingdao, 266071, People's Republic of China.
- Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Nankai University, Tianjin, 300071, People's Republic of China.
| | - Mahesh Kumar
- Department of Electrical Engineering, Indian Institute of Technology Jodhpur, Jodhpur, 342037, India.
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23
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Chen X, Liu C, Mao S. Environmental Analysis with 2D Transition-Metal Dichalcogenide-Based Field-Effect Transistors. NANO-MICRO LETTERS 2020; 12:95. [PMID: 34138098 PMCID: PMC7770660 DOI: 10.1007/s40820-020-00438-w] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/09/2020] [Accepted: 03/23/2020] [Indexed: 05/27/2023]
Abstract
Field-effect transistors (FETs) present highly sensitive, rapid, and in situ detection capability in chemical and biological analysis. Recently, two-dimensional (2D) transition-metal dichalcogenides (TMDCs) attract significant attention as FET channel due to their unique structures and outstanding properties. With the booming of studies on TMDC FETs, we aim to give a timely review on TMDC-based FET sensors for environmental analysis in different media. First, theoretical basics on TMDC and FET sensor are introduced. Then, recent advances of TMDC FET sensor for pollutant detection in gaseous and aqueous media are, respectively, discussed. At last, future perspectives and challenges in practical application and commercialization are given for TMDC FET sensors. This article provides an overview on TMDC sensors for a wide variety of analytes with an emphasize on the increasing demand of advanced sensing technologies in environmental analysis.
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Affiliation(s)
- Xiaoyan Chen
- Biomedical Multidisciplinary Innovation Research Institute, Shanghai East Hospital, State Key Laboratory of Pollution Control and Resource Reuse, College of Environmental Science and Engineering, Tongji University, 1239 Siping Road, Shanghai, 200092, People's Republic of China
- Shanghai Institute of Pollution Control and Ecological Security, Shanghai, 200092, People's Republic of China
- Department of Materials Science and Engineering, Johns Hopkins University, 3400 N. Charles St., Baltimore, USA
| | - Chengbin Liu
- Biomedical Multidisciplinary Innovation Research Institute, Shanghai East Hospital, State Key Laboratory of Pollution Control and Resource Reuse, College of Environmental Science and Engineering, Tongji University, 1239 Siping Road, Shanghai, 200092, People's Republic of China
- Shanghai Institute of Pollution Control and Ecological Security, Shanghai, 200092, People's Republic of China
| | - Shun Mao
- Biomedical Multidisciplinary Innovation Research Institute, Shanghai East Hospital, State Key Laboratory of Pollution Control and Resource Reuse, College of Environmental Science and Engineering, Tongji University, 1239 Siping Road, Shanghai, 200092, People's Republic of China.
- Shanghai Institute of Pollution Control and Ecological Security, Shanghai, 200092, People's Republic of China.
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