Multifunctional Self-Doped Nanocrystal Thin-Film Transistor Sensors

Silver Telluride Colloidal Quantum Dot Solid for Fast Extended Shortwave Infrared Photodetector

Extended shortwave infrared (eSWIR) photodetectors that employ solution-processable semiconductors have attracted attention for use in applications such as ranging, night vision, and gas detection. Colloidal quantum dots (CQDs) are promising materials with facile bandgap tunability across the visible-to-mid-infrared wavelengths. However, toxic elements, such as Hg and Pb, and the slow response time of CQD-based IR photodetectors, limit their commercial viability. This article presents a novel eSWIR photodetector that is fabricated using silver telluride (Ag2Te) CQDs. Effective thiolate ligand exchange enables a lower trap density and improved carrier mobility in CQD solids. Furthermore, a vertical p-n photodiode architecture with a favorable energy-level landscape is utilized to facilitate charge extraction, resulting in a fast, room-temperature-operable, and toxic-element-free CQD photodetector. The best eSWIR Ag2Te CQD photodetector exhibits a fall time of 72 ns, representing the fastest response time among all prior CQD-based eSWIR photodetectors, including those containing toxic elements, such as Pb and Hg.

Mercury chalcogenide colloidal quantum dots for infrared photodetection: from synthesis to device applications

Commercial infrared (IR) photodetectors based on epitaxial growth inorganic semiconductors, e.g. InGaAs and HgCdTe, suffer from high fabrication cost, poor compatibility with silicon integrated circuits, rigid substrates and bulky cooling systems, which leaves a large development window for the emerging solution-processable semiconductor-based photo-sensing devices. Among the solution-processable semiconductors, mercury (Hg) chalcogenide colloidal quantum dots (QDs) exhibit unique ultra-broad and tuneable photo-responses in the short-wave infrared to far-wave infrared range, and have demonstrated photo-sensing abilities comparable to the commercial products, especially with advances in high operation temperature. Here, we provide a focused review on photodetectors employing Hg chalcogenide colloidal QDs, with a comprehensive summary of the essential progress in the areas of synthesis methods of QDs, property control, device engineering, focus plane array integration, etc. Besides imaging demonstrations, a series of Hg chalcogenide QD photodetector based flexible, integrated, multi-functional applications are also summarized. This review shows prospects for the next-generation low-cost highly-sensitive and compact IR photodetectors based on solution-processable Hg chalcogenide colloidal QDs.

Mid-Infrared Intraband Photodetector via High Carrier Mobility HgSe Colloidal Quantum Dots

In this work, a room-temperature mixed-phase ligand exchange method is developed to obtain a relatively high carrier mobility (∼1 cm²/(V s)) on HgSe intraband colloidal quantum dot solids without any observable trap state. What is more, the doping from 1S_e to 1P_e state in the conduction band could be precisely controlled by additional salts during this method, proved by optical and transport experiments. The high mobility and controllable doping benefit the mid-infrared photodetector utilizing the 1S_e to 1P_e transition, with a 1000-fold improvement in response speed, which is several μs, a 55-fold increase in responsivity, which is 77 mA/W, and a 10-fold increase in specific detectivity, which is above 1.7 × 10⁹ Jones at 80 K. The high-performance photodetector could serve as an intraband infrared camera for thermal imaging, as well as a CO₂ gas sensor with a range from 0.25 to 2000 ppm.

Mg-doped InSnO nanofiber field-effect transistor for methanol gas detection at room temperature

Research on high-performance gas sensors for detecting toxic and harmful methanol gas is still a very important issue. For gas sensors, it is very important to be able to achieve low concentration detection at room temperature. In this work, we used the electrospinning method to prepare Mg-doped InSnO nanofiber field-effect transistors (FETs) methanol gas sensor. When the Mg element doping concentration is 2.3 mol.%, InSnO nanofiber FET exhibits excellent electrical properties, including higher mobility of 3.17 cm²V^-1s^-1, threshold voltage of 1.51 V, subthreshold swing of 0.42 V/decade, the excellent on/off current ratio is about 10⁸and the positive bias stress stability of the InSnO nanofiber FET through Mg doping has been greatly improved. In addition, the InSnMgO nanofiber FET gas sensor exhibits acceptable gas selectivity and sensitivity to methanol gas at room temperature. In the methanol gas sensor test at room temperature, when the methanol gas concentration is 60 ppm at room temperature, the response value of the InSnMgO nanofiber FET gas sensor is 81.92; and when the methanol concentration is 5 ppm, the response value is still 1.21. This work provides an effective and novel way to build a gas sensor at room temperature and use it to detect methanol gas at room temperature.

A Review of Phototransistors Using Metal Oxide Semiconductors: Research Progress and Future Directions

Metal oxide thin-film transistors have been continuously researched and mass-produced in the display industry. However, their phototransistors are still in their infancy. In particular, utilizing metal oxide semiconductors as phototransistors is difficult because of the limited light absorption wavelength range and persistent photocurrent (PPC) phenomenon. Numerous studies have attempted to improve the detectable light wavelength range and the PPC phenomenon. Here, recent studies on metal oxide phototransistors are reviewed, which have improved the range of light wavelengths and the PPC phenomenon by introducing an absorption layer of oxide or non-oxide hybrid structure. The materials of the absorption layer applied to absorb long-wavelength light are classified into oxides, chalcogenides, organic materials, perovskites, and nanodots. Finally, next-generation convergence studies combined with other research fields are introduced and future research directions are detailed.

Transformation of Colloidal Quantum Dot: From Intraband Transition to Localized Surface Plasmon Resonance

An increase in the carrier density of semiconductor nanocrystals can gradually change the origin of the optical property from the excitonic transition to the localized surface plasmon resonances. Here, we present the evolution of the electronic transition of self-doped Ag₂Se colloidal quantum dots, from the intraband transition to the localized surface plasmon resonances along with a splitting of the intraband transition (1P_e-1S_e). The minimum fwhm of the split intraband transition is only 23.7 meV, which is exceptionally narrow compared to that of metal oxide nanocrystals showing LSPRs, inferring that the electron-electron scattering is significantly suppressed due to the smaller carrier density. The splitting of the intraband transition mainly results from the asymmetrical crystal structure of the tetragonal Ag₂Se CQDs and becomes distinct when the nanocrystal changes its crystal structure from the cubic to tetragonal structure. Maximizing the discrete energy levels in the quantum dot along with mixing with plasmonic characters may provide opportunities to fully harness merits of both the quantum confinement effect and localized surface plasmon resonance characters.

Nitrogen-Doped Carbon Dots Induced Enhancement in CO2 Sensing Response From ZnO-Porous Silicon Hybrid Structure

In this study, we report a simple method for the fabrication of carbon dots sensitized zinc oxide-porous silicon (ZnO-pSi) hybrid structures for carbon dioxide (CO2) sensing. A micro-/nanostructured layer of ZnO is formed over electrochemically prepared pSi substrates using a simple chemical precipitation method. The hybrid structure was structurally and optically characterized using scanning electron microscopy, X-ray diffraction, fluorescence, and cathodoluminescence after the incorporation of hydrothermally prepared nitrogen-doped carbon dots (NCDs) by drop casting. With respect to the control sample, although all the devices show an enhancement in the sensing response in the presence of NCDs, the optimal concentration shows an increase of ~37% at an operating temperature of 200°C and a response time <30 s. The increment in the CO2-sensing response, upon the addition of NCDs, is attributed to an increase in CO2-oxygen species reactions on the ZnO surface due to an increment in the free electron density at the metal-semiconductor-type junction of NCD clusters and ZnO micro-/nanorods. A significant increase in the sensing response (~24%) at low operating temperature (100°C) opens the possibility of developing very large-scale integrable (VLSI), low operational cost gas sensors with easy fabrication methods and low-cost materials.

Midwavelength Infrared Photoluminescence and Lasing of Tellurium Elemental Solid and Microcrystals

Tellurium has been of great interest in physics, chemistry, material science, and more recently in nanoscience. However, information on the photoluminescence of Te crystals, crucial in understanding the material, has never been disclosed. Here, we present photoluminescence and lasing for the Te bulk crystal and microcrystals. Photoluminescence of Te bulk solid crystal was observed at 3.75 μm in the midwavelength infrared (MWIR) region, matching the theoretically predicted value well. With increasing the photoexcitation intensity or decreasing temperature, we successfully observed MWIR random lasing of the bulk Te crystals at 3.62 μm. Furthermore, the rod-shaped Te microcrystals efficiently exhibit second harmonic and third harmonic lasing at MWIR and short-wavelength infrared regions, respectively. Nonlinear coherent MWIR lasing from the Te microcrystals will serve as an excellent mid-IR light source, opening up new applications in infrared photonics, extremely long-depth penetration bioimaging, and optoelectronics.