Si-Bridged Ladder-Type Small-Molecule Acceptors for High-Performance Organic Photovoltaics

Renewed Prospects for Organic Photovoltaics

Organic photovoltaics (OPVs) have progressed steadily through three stages of photoactive materials development: (i) use of poly(3-hexylthiophene) and fullerene-based acceptors (FAs) for optimizing bulk heterojunctions; (ii) development of new donors to better match with FAs; (iii) development of non-fullerene acceptors (NFAs). The development and application of NFAs with an A-D-A configuration (where A = acceptor and D = donor) has enabled devices to have efficient charge generation and small energy losses (E_loss < 0.6 eV), resulting in substantially higher power conversion efficiencies (PCEs) than FA-based devices. The discovery of Y6-type acceptors (Y6 = 2,2'-((2Z,2'Z)-((12,13-bis(2-ethylhexyl)-3,9-diundecyl-12,13-dihydro-[1,2,5]-thiadiazolo[3,4-e]-thieno[2″,3″:4',5']thieno-[2',3':4,5]pyrrolo-[3,2-g]thieno-[2',3':4,5]thieno-[3,2-b]indole-2,10-diyl)bis(methanylylidene))bis(5,6-difluoro-3-oxo-2,3-dihydro-1H-indene-2,1-diylidene))dimalononitrile) with an A-DA' D-A configuration has further propelled the PCEs to go beyond 15% due to smaller E_loss values (∼0.5 eV) and higher external quantum efficiencies. Subsequently, the PCEs of Y6-series single-junction devices have increased to >19% and may soon approach 20%. This review provides an update of recent progress of OPV in the following aspects: developments of novel NFAs and donors, understanding of the structure-property relationships and underlying mechanisms of state-of-the-art OPVs, and tasks underpinning the commercialization of OPVs, such as device stability, module development, potential applications, and high-throughput manufacturing. Finally, an outlook and prospects section summarizes the remaining challenges for the further development of OPV technology.

Recent Progress in the Design of Fused-Ring Non-Fullerene Acceptors-Relations between Molecular Structure and Optical, Electronic, and Photovoltaic Properties

Organic solar cells are on the dawn of the next era. The change of focus toward non-fullerene acceptors has introduced an enormous amount of organic n-type materials and has drastically increased the power conversion efficiencies of organic photovoltaics, now exceeding 18%, a value that was believed to be unreachable some years ago. In this Review, we summarize the recent progress in the design of ladder-type fused-ring non-fullerene acceptors in the years 2018-2020. We thereby concentrate on single layer heterojunction solar cells and omit tandem architectures as well as ternary solar cells. By analyzing more than 700 structures, we highlight the basic design principles and their influence on the optical and electrical structure of the acceptor molecules and review their photovoltaic performance obtained so far. This Review should give an extensive overview of the plenitude of acceptor motifs but will also help to understand which structures and strategies are beneficial for designing materials for highly efficient non-fullerene organic solar cells.

Spherical Hole-Transporting Interfacial Layer Passivated Defect for Inverted NiOx-Based Planar Perovskite Solar Cells with High Efficiency of over 20

In this study, we achieved a facile and low-cost (18-22 USD/g) synthesis of spiro[fluorene-9,9-phenanthren-10-one]-based interfacial layer materials (MSs; designated MS-PC, MS-PA, MS-OC, and MS-OA). Carbazoles and dimethylacridine substituents with an extended π-conjugation achieved through ortho- or para-orientations were used as donors at the spiro[fluorene-9,9'-phenanthren-10'-one] moiety. Highly efficient and stable inverted perovskite solar cells (PSCs) with the device architecture of ITO/NiO_x/MSs/perovskite/PC₆₁BM/BCP/Ag can be achieved to improve the surface morphology of NiO_x when MSs are adopted as the interfacial layer. During a morphological study, the ortho-orientated donor of MS-OC and MS-OA has spherical structures indicated that the films were smooth and that the films of perovskite deposited on them had large grain size and uniformity. The photoluminescence properties of the perovskite layers on the NiO_x/MSs were showed better hole-transporting capabilities than the bare NiO_x. The dual-functional interfacial layer has shown defect passivation effect, it not only improved the surface morphology of NiO_x but also enlarged the perovskite layer grain size. The best PSC device performance of the NiO_x/MS-OC was characterized by 22.34 mA cm^-2 short-circuit current density (J_sc), 1.128 V open-circuit voltage (V_oc), and 80.8% fill factor (FF), resulting in 20.34% power conversion efficiency (PCE). The NiO_x/MS-OC PSCs showed good long-term device stability, even retained the original PCE of 93.16% after 370 days under argon (25 °C). Owing to the superior perovskite morphologies of the NiO_x/MSs, the resulting devices outperformed the bare NiO_x-based PSCs.

Silicon Phthalocyanines as Acceptor Candidates in Mixed Solution/Evaporation Processed Planar Heterojunction Organic Photovoltaic Devices

Silicon phthalocyanines (SiPc) are showing promise as both ternary additives and non-fullerene acceptors in organic photovoltaics (OPVs) as a result of their ease of synthesis, chemical stability and strong absorption. In this study, bis(3,4,5-trifluorophenoxy) silicon phthalocyanine ((345F)2-SiPc)) and bis(2,4,6-trifluorophenoxy) silicon phthalocyanine ((246F)2-SiPc)) are employed as acceptors in mixed solution/evaporation planar heterojunction (PHJ) devices. The donor layer, either poly(3-hexylthiophene) (P3HT) or poly[N-9′-heptadecanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl-2′,1′,3′-benzothiadiazole)] (PCDTBT), was spin coated followed by the evaporation of the SiPc acceptor thin film. Several different donor/acceptor combinations were investigated in addition to investigations to determine the effect of film thickness on device performance. Finally, the effects of annealing, prior to SiPc deposition, after SiPc deposition, and during SiPc deposition were also investigated. The devices which performed the best were obtained using PCDTBT as the donor, with a 90 nm film of (345F)2-SiPc as the acceptor, followed by thermal annealing at 150 °C for 30 min of the entire mixed solution/evaporation device. An open-circuit voltage (Voc) of 0.88 V and a fill factor (FF) of 0.52 were achieved leading to devices that outperformed corresponding fullerene-based PHJ devices.