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Song H, Chen S, Sun X, Cui Y, Yildirim T, Kang J, Yang S, Yang F, Lu Y, Zhang L. Enhancing 2D Photonics and Optoelectronics with Artificial Microstructures. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2403176. [PMID: 39031754 PMCID: PMC11348073 DOI: 10.1002/advs.202403176] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/26/2024] [Revised: 06/04/2024] [Indexed: 07/22/2024]
Abstract
By modulating subwavelength structures and integrating functional materials, 2D artificial microstructures (2D AMs), including heterostructures, superlattices, metasurfaces and microcavities, offer a powerful platform for significant manipulation of light fields and functions. These structures hold great promise in high-performance and highly integrated optoelectronic devices. However, a comprehensive summary of 2D AMs remains elusive for photonics and optoelectronics. This review focuses on the latest breakthroughs in 2D AM devices, categorized into electronic devices, photonic devices, and optoelectronic devices. The control of electronic and optical properties through tuning twisted angles is discussed. Some typical strategies that enhance light-matter interactions are introduced, covering the integration of 2D materials with external photonic structures and intrinsic polaritonic resonances. Additionally, the influences of external stimuli, such as vertical electric fields, enhanced optical fields and plasmonic confinements, on optoelectronic properties is analysed. The integrations of these devices are also thoroughly addressed. Challenges and future perspectives are summarized to stimulate research and development of 2D AMs for future photonics and optoelectronics.
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Affiliation(s)
- Haizeng Song
- Henan Key Laboratory of Rare Earth Functional MaterialsZhoukou Normal UniversityZhoukou466001China
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
| | - Shuai Chen
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
| | - Xueqian Sun
- School of Engineering, College of Engineering and Computer Sciencethe Australian National UniversityCanberraACT2601Australia
| | - Yichun Cui
- National Key Laboratory of Science and Technology on Test Physics and Numerical MathematicsBeijing100190China
| | - Tanju Yildirim
- Faculty of Science and EngineeringSouthern Cross UniversityEast LismoreNSW2480Australia
| | - Jian Kang
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
| | - Shunshun Yang
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
| | - Fan Yang
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
| | - Yuerui Lu
- School of Engineering, College of Engineering and Computer Sciencethe Australian National UniversityCanberraACT2601Australia
| | - Linglong Zhang
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
- Laboratory of Solid State MicrostructuresNanjing UniversityNanjing210093China
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Xu D, Jian P, Liu W, Tan S, Yang Y, Peng M, Dai J, Chen C, Wu F. Vanadium Metal Doping of Monolayer MoS 2 for p-Type Transistors and Fast-Speed Phototransistors. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38657168 DOI: 10.1021/acsami.4c03154] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/26/2024]
Abstract
Modulating the electrical properties of two-dimensional (2D) materials is a fundamental prerequisite for their development to advanced electronic and optoelectronic devices. Substitutional doping has been demonstrated as an effective method for tuning the band structure in monolayer 2D materials. Here, we demonstrate a facile selective-area growth of vanadium-doped molybdenum disulfide (V-doped MoS2) flakes via pre-patterned vanadium-metal-assisted chemical vapor deposition (CVD). Optical microscopy characterization revealed the presence of flake arrays. Transmission electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy were employed to identify the chemical composition and crystalline structure of as-grown flakes. Electrical measurements indicated a light p-type conduction behavior in monolayer V-doped MoS2. Furthermore, the response time of phototransistors based on V-doped MoS2 monolayers exhibited a remarkable capability of 3 ms, representing approximately 3 orders of magnitude faster response than that observed in pure MoS2 phototransistors. This work hereby provides a feasible approach to doping of 2D materials, promising a scalable pathway for the integration of these materials into emerging electronic and optoelectronic devices.
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Affiliation(s)
- Dan Xu
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Pengcheng Jian
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Weijie Liu
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Shizhou Tan
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Yiming Yang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Meng Peng
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Jiangnan Dai
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Changqing Chen
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Feng Wu
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
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Yan Q, Kar S, Chowdhury S, Bansil A. The Case for a Defect Genome Initiative. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2303098. [PMID: 38195961 DOI: 10.1002/adma.202303098] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/03/2023] [Revised: 08/12/2023] [Indexed: 01/11/2024]
Abstract
The Materials Genome Initiative (MGI) has streamlined the materials discovery effort by leveraging generic traits of materials, with focus largely on perfect solids. Defects such as impurities and perturbations, however, drive many attractive functional properties of materials. The rich tapestry of charge, spin, and bonding states hosted by defects are not accessible to elements and perfect crystals, and defects can thus be viewed as another class of "elements" that lie beyond the periodic table. Accordingly, a Defect Genome Initiative (DGI) to accelerate functional defect discovery for energy, quantum information, and other applications is proposed. First, major advances made under the MGI are highlighted, followed by a delineation of pathways for accelerating the discovery and design of functional defects under the DGI. Near-term goals for the DGI are suggested. The construction of open defect platforms and design of data-driven functional defects, along with approaches for fabrication and characterization of defects, are discussed. The associated challenges and opportunities are considered and recent advances towards controlled introduction of functional defects at the atomic scale are reviewed. It is hoped this perspective will spur a community-wide interest in undertaking a DGI effort in recognition of the importance of defects in enabling unique functionalities in materials.
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Affiliation(s)
- Qimin Yan
- Department of Physics, Northeastern University, Boston, MA 02115, USA
| | - Swastik Kar
- Department of Physics, Northeastern University, Boston, MA 02115, USA
- Department of Chemical Engineering, Northeastern University, Boston, MA 02115, USA
| | - Sugata Chowdhury
- Department of Physics and Astrophysics, Howard University, Washington, DC 20059, USA
| | - Arun Bansil
- Department of Physics, Northeastern University, Boston, MA 02115, USA
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Danieli Y, Sanders E, Brontvein O, Joselevich E. Guided CdTe Nanowires Integrated into Fast Near-Infrared Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2024; 16:2637-2648. [PMID: 38174359 PMCID: PMC10797596 DOI: 10.1021/acsami.3c15797] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/22/2023] [Revised: 12/11/2023] [Accepted: 12/21/2023] [Indexed: 01/05/2024]
Abstract
Infrared photodetectors are essential devices for telecommunication and night vision technologies. Two frequently used materials groups for this technology are III-V and II-VI semiconductors, notably, mercury-cadmium-telluride alloys (MCT). However, growing them usually requires expensive substrates that can only be provided on small scales, and their large-scale production as crystalline nanostructures is challenging. In this paper, we present a two-stage process for creating aligned MCT nanowires (NWs). First, we report the growth of planar CdTe nanowires with controlled orientations on flat and faceted sapphire substrates via the vapor-liquid-solid (VLS) mechanism. We utilize this guided growth approach to parallelly integrate the NWs into fast near-infrared photodetectors with characteristic rise and fall times of ∼100 μs at room temperature. An epitaxial effect of the planar growth and the unique structure of the NWs, including size and composition, are suggested to explain the high performance of the devices. In the second stage, we show that cation exchange with mercury can be applied, resulting in a band gap narrowing of up to 55 meV, corresponding to an exchange of 2% Cd with Hg. This work opens new opportunities for creating small, fast, and sensitive infrared detectors with an engineered band gap operating at room temperature.
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Affiliation(s)
- Yarden Danieli
- Department
of Molecular Chemistry and Materials Sciences, Weizmann Institute of Science, Rehovot 76100, Israel
| | - Ella Sanders
- Department
of Molecular Chemistry and Materials Sciences, Weizmann Institute of Science, Rehovot 76100, Israel
| | - Olga Brontvein
- Chemical
Research Support, Weizmann Institute of
Science, Rehovot 76100, Israel
| | - Ernesto Joselevich
- Department
of Molecular Chemistry and Materials Sciences, Weizmann Institute of Science, Rehovot 76100, Israel
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Lin H, Zhang Z, Zhang H, Lin KT, Wen X, Liang Y, Fu Y, Lau AKT, Ma T, Qiu CW, Jia B. Engineering van der Waals Materials for Advanced Metaphotonics. Chem Rev 2022; 122:15204-15355. [PMID: 35749269 DOI: 10.1021/acs.chemrev.2c00048] [Citation(s) in RCA: 20] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Abstract
The outstanding chemical and physical properties of 2D materials, together with their atomically thin nature, make them ideal candidates for metaphotonic device integration and construction, which requires deep subwavelength light-matter interaction to achieve optical functionalities beyond conventional optical phenomena observed in naturally available materials. In addition to their intrinsic properties, the possibility to further manipulate the properties of 2D materials via chemical or physical engineering dramatically enhances their capability, evoking new science on light-matter interaction, leading to leaped performance of existing functional devices and giving birth to new metaphotonic devices that were unattainable previously. Comprehensive understanding of the intrinsic properties of 2D materials, approaches and capabilities for chemical and physical engineering methods, the resulting property modifications and novel functionalities, and applications of metaphotonic devices are provided in this review. Through reviewing the detailed progress in each aspect and the state-of-the-art achievement, insightful analyses of the outstanding challenges and future directions are elucidated in this cross-disciplinary comprehensive review with the aim to provide an overall development picture in the field of 2D material metaphotonics and promote rapid progress in this fast emerging and prosperous field.
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Affiliation(s)
- Han Lin
- School of Science, RMIT University, Melbourne, Victoria 3000, Australia.,The Australian Research Council (ARC) Industrial Transformation Training, Centre in Surface Engineering for Advanced Materials (SEAM), Swinburne University of Technology, Hawthorn, Victoria 3122, Australia
| | - Zhenfang Zhang
- School of Textile Science and Engineering, Xi'an Polytechnic University, Xi'an 710048, China
| | - Huihui Zhang
- Centre for Translational Atomaterials, School of Science, Computing and Engineering Technologies, Swinburne University of Technology, P.O. Box 218, Hawthorn, Victoria 3122, Australia
| | - Keng-Te Lin
- School of Science, RMIT University, Melbourne, Victoria 3000, Australia
| | - Xiaoming Wen
- Centre for Translational Atomaterials, School of Science, Computing and Engineering Technologies, Swinburne University of Technology, P.O. Box 218, Hawthorn, Victoria 3122, Australia
| | - Yao Liang
- Centre for Translational Atomaterials, School of Science, Computing and Engineering Technologies, Swinburne University of Technology, P.O. Box 218, Hawthorn, Victoria 3122, Australia
| | - Yang Fu
- Centre for Translational Atomaterials, School of Science, Computing and Engineering Technologies, Swinburne University of Technology, P.O. Box 218, Hawthorn, Victoria 3122, Australia
| | - Alan Kin Tak Lau
- Centre for Translational Atomaterials, School of Science, Computing and Engineering Technologies, Swinburne University of Technology, P.O. Box 218, Hawthorn, Victoria 3122, Australia
| | - Tianyi Ma
- School of Science, RMIT University, Melbourne, Victoria 3000, Australia.,Centre for Translational Atomaterials, School of Science, Computing and Engineering Technologies, Swinburne University of Technology, P.O. Box 218, Hawthorn, Victoria 3122, Australia
| | - Cheng-Wei Qiu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
| | - Baohua Jia
- School of Science, RMIT University, Melbourne, Victoria 3000, Australia.,The Australian Research Council (ARC) Industrial Transformation Training, Centre in Surface Engineering for Advanced Materials (SEAM), Swinburne University of Technology, Hawthorn, Victoria 3122, Australia.,Centre for Translational Atomaterials, School of Science, Computing and Engineering Technologies, Swinburne University of Technology, P.O. Box 218, Hawthorn, Victoria 3122, Australia
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Wang H, Wang Y, Zhang C. Novel Electrochemical Sensor for the Determination of Bisphenol A Using a Molybdenum(IV) Sulfide Quantum Dots Polysodium Styrene Sulfonate Functionalized Reduced Graphene Oxide Modified Glassy Carbon Electrode (GCE) by Differential Pulse Voltammetry (DPV). ANAL LETT 2022. [DOI: 10.1080/00032719.2022.2066111] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/01/2022]
Affiliation(s)
- Haiyang Wang
- Green Catalysis Center and College of Chemistry, Zhengzhou University, Zhengzhou, China
| | - Yan Wang
- Green Catalysis Center and College of Chemistry, Zhengzhou University, Zhengzhou, China
| | - Cuijie Zhang
- Green Catalysis Center and College of Chemistry, Zhengzhou University, Zhengzhou, China
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7
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Kadam SA, Phan GT, Pham DV, Patil RA, Lai CC, Chen YR, Liou Y, Ma YR. Doping-free bandgap tunability in Fe 2O 3 nanostructured films. NANOSCALE ADVANCES 2021; 3:5581-5588. [PMID: 36133276 PMCID: PMC9418971 DOI: 10.1039/d1na00442e] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/14/2021] [Accepted: 07/29/2021] [Indexed: 06/16/2023]
Abstract
A tunable bandgap without doping is highly desirable for applications in optoelectronic devices. Herein, we develop a new method which can tune the bandgap without any doping. In the present research, the bandgap of Fe2O3 nanostructured films is simply tuned by changing the synthesis temperature. The Fe2O3 nanostructured films are synthesized on ITO/glass substrates at temperatures of 1100, 1150, 1200, and 1250 °C using the hot filament metal oxide vapor deposition (HFMOVD) and thermal oxidation techniques. The Fe2O3 nanostructured films contain two mixtures of Fe2+ and Fe3+ cations and two trigonal (α) and cubic (γ) phases. The increase of the Fe2+ cations and cubic (γ) phase with the elevated synthesis temperatures lifted the valence band edge, indicating a reduction in the bandgap. The linear bandgap reduction of 0.55 eV without any doping makes the Fe2O3 nanostructured films promising materials for applications in bandgap engineering, optoelectronic devices, and energy storage devices.
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Affiliation(s)
- Sujit A Kadam
- Department of Physics, National Dong Hwa University Hualien 97401 Taiwan
| | - Giang Thi Phan
- Department of Physics, National Dong Hwa University Hualien 97401 Taiwan
| | - Duy Van Pham
- Department of Physics, National Dong Hwa University Hualien 97401 Taiwan
- Center for Condensed Matter Sciences, National Taiwan University Taipei 10617 Taiwan
| | - Ranjit A Patil
- Department of Physics, National Dong Hwa University Hualien 97401 Taiwan
| | - Chien-Chih Lai
- Department of Physics, National Dong Hwa University Hualien 97401 Taiwan
| | - Yan-Ruei Chen
- Institute of Physics, Academia Sinica Taipei 11529 Taiwan
| | - Yung Liou
- Institute of Physics, Academia Sinica Taipei 11529 Taiwan
| | - Yuan-Ron Ma
- Department of Physics, National Dong Hwa University Hualien 97401 Taiwan
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Wei Z, Tang J, Li X, Chi Z, Wang Y, Wang Q, Han B, Li N, Huang B, Li J, Yu H, Yuan J, Chen H, Sun J, Chen L, Wu K, Gao P, He C, Yang W, Shi D, Yang R, Zhang G. Wafer-Scale Oxygen-Doped MoS 2 Monolayer. SMALL METHODS 2021; 5:e2100091. [PMID: 34927920 DOI: 10.1002/smtd.202100091] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/26/2021] [Revised: 02/26/2021] [Indexed: 06/14/2023]
Abstract
Monolayer MoS2 is an emergent 2D semiconductor for next-generation miniaturized and flexible electronics. Although the high-quality monolayer MoS2 is already available at wafer scale, doping of it uniformly remains an unsolved problem. Such doping is of great importance in view of not only tailoring its properties but also facilitating many potential large-scale applications. In this work, the uniform oxygen doping of 2 in wafer-scale monolayer MoS2 (MoS2- x Ox ) with tunable doping levels is realized through an in situ chemical vapor deposition process. Interestingly, ultrafast infrared spectroscopy measurements and first-principles calculations reveal a reduction of bandgaps of monolayer MoS2- x Ox with increased oxygen-doping levels. Field-effect transistors and logic devices are also fabricated based on these wafer-scale MoS2- x Ox monolayers, and excellent electronic performances are achieved, exhibiting promise of such doped MoS2 monolayers.
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Affiliation(s)
- Zheng Wei
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Jian Tang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Xuanyi Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Zhen Chi
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Yu Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Qinqin Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Bo Han
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
| | - Na Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Biying Huang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Jiawei Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Hua Yu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Jiahao Yuan
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Hailong Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Jiatao Sun
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Information and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Lan Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Kehui Wu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Peng Gao
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing, 100871, China
- Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, 100871, China
| | - Congli He
- Institute of Advanced Materials, Beijing Normal University, Beijing, 100875, China
| | - Wei Yang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Dongxia Shi
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
- Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing, 100190, China
| | - Rong Yang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Guangyu Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
- Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
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Liu Y, Gu F. A wafer-scale synthesis of monolayer MoS 2 and their field-effect transistors toward practical applications. NANOSCALE ADVANCES 2021; 3:2117-2138. [PMID: 36133770 PMCID: PMC9419721 DOI: 10.1039/d0na01043j] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/14/2020] [Accepted: 02/17/2021] [Indexed: 05/11/2023]
Abstract
Molybdenum disulfide (MoS2) has attracted considerable research interest as a promising candidate for downscaling integrated electronics due to the special two-dimensional structure and unique physicochemical properties. However, it is still challenging to achieve large-area MoS2 monolayers with desired material quality and electrical properties to fulfill the requirement for practical applications. Recently, a variety of investigations have focused on wafer-scale monolayer MoS2 synthesis with high-quality. The 2D MoS2 field-effect transistor (MoS2-FET) array with different configurations utilizes the high-quality MoS2 film as channels and exhibits favorable performance. In this review, we illustrated the latest research advances in wafer-scale monolayer MoS2 synthesis by different methods, including Au-assisted exfoliation, CVD, thin film sulfurization, MOCVD, ALD, VLS method, and the thermolysis of thiosalts. Then, an overview of MoS2-FET developments was provided based on large-area MoS2 film with different device configurations and performances. The different applications of MoS2-FET in logic circuits, basic memory devices, and integrated photodetectors were also summarized. Lastly, we considered the perspective and challenges based on wafer-scale monolayer MoS2 synthesis and MoS2-FET for developing practical applications in next-generation integrated electronics and flexible optoelectronics.
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Affiliation(s)
- Yuchun Liu
- Laboratory of Integrated Opto-Mechanics and Electronics, School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology Shanghai 200093 China
| | - Fuxing Gu
- Laboratory of Integrated Opto-Mechanics and Electronics, School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology Shanghai 200093 China
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Yoo H, Heo K, Ansari MHR, Cho S. Recent Advances in Electrical Doping of 2D Semiconductor Materials: Methods, Analyses, and Applications. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:832. [PMID: 33805062 PMCID: PMC8064109 DOI: 10.3390/nano11040832] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/20/2021] [Revised: 03/19/2021] [Accepted: 03/22/2021] [Indexed: 12/22/2022]
Abstract
Two-dimensional materials have garnered interest from the perspectives of physics, materials, and applied electronics owing to their outstanding physical and chemical properties. Advances in exfoliation and synthesis technologies have enabled preparation and electrical characterization of various atomically thin films of semiconductor transition metal dichalcogenides (TMDs). Their two-dimensional structures and electromagnetic spectra coupled to bandgaps in the visible region indicate their suitability for digital electronics and optoelectronics. To further expand the potential applications of these two-dimensional semiconductor materials, technologies capable of precisely controlling the electrical properties of the material are essential. Doping has been traditionally used to effectively change the electrical and electronic properties of materials through relatively simple processes. To change the electrical properties, substances that can donate or remove electrons are added. Doping of atomically thin two-dimensional semiconductor materials is similar to that used for silicon but has a slightly different mechanism. Three main methods with different characteristics and slightly different principles are generally used. This review presents an overview of various advanced doping techniques based on the substitutional, chemical, and charge transfer molecular doping strategies of graphene and TMDs, which are the representative 2D semiconductor materials.
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Affiliation(s)
- Hocheon Yoo
- Department of Electronic Engineering, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 13120, Korea; (H.Y.); (M.H.R.A.)
- Graduate School of IT Convergence Engineering, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 13120, Korea
| | - Keun Heo
- Department of Semiconductor Science & Technology, Jeonbuk National University, Jeonju-si, Jeollabuk-do 54896, Korea;
| | - Md. Hasan Raza Ansari
- Department of Electronic Engineering, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 13120, Korea; (H.Y.); (M.H.R.A.)
- Graduate School of IT Convergence Engineering, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 13120, Korea
| | - Seongjae Cho
- Department of Electronic Engineering, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 13120, Korea; (H.Y.); (M.H.R.A.)
- Graduate School of IT Convergence Engineering, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 13120, Korea
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11
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Jian J, Chang H, Dong P, Bai Z, Zuo K. A mechanism for the variation in the photoelectric performance of a photodetector based on CVD-grown 2D MoS 2. RSC Adv 2021; 11:5204-5217. [PMID: 35424465 PMCID: PMC8694605 DOI: 10.1039/d0ra10302k] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/07/2020] [Accepted: 12/23/2020] [Indexed: 01/26/2023] Open
Abstract
Two-dimensional transition-metal dichalcogenides are considered as promising candidates for next-generation flexible nanoelectronics owing to their compelling properties. The photoelectric performance of a photodetector based on CVD-grown 2D MoS2 was studied. It is found that annealing treatment can make the photoresponsivity and specific detectivity of the CVD-grown 2D MoS2 based photodetector increase from 0.1722 A W-1 and 1014.65 Jones to 0.2907 A W-1 and 1014.84 Jones, respectively, while vulcanization can make the rise response time and fall response time decrease from 0.9013 s and 2.173 s to 0.07779 s and 0.08616 s, respectively. A method to determine the O-doping concentration in the CVD-grown 2D MoS2 has been obtained. The criterion for the CVD-grown 2D MoS2 to transition from an oxygen-doped state to a pure state has been developed. A mechanism explaining the variation in the photoelectric performance of the CVD-grown 2D MoS2 has been proposed. The CVD-grown 2D MoS2 and the annealed CVD-grown 2D MoS2 are oxygen-doped MoS2 while the vulcanized CVD-grown 2D MoS2 is pure MoS2. The variation in the photoelectric performance of CVD-grown 2D MoS2 results from differences in the O-doping concentration and the bandgap.
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Affiliation(s)
- Jiaying Jian
- School of Mechanical Engineering, Northwestern Polytechnical University Baoding 710072 P. R. China .,School of Electronic Information and Engineering, Xi'an Technological University Xi'an 710021 P. R. China .,Shaanxi Key Laboratory of Photoelectric Functional Materials and Devices, Xi'an Technological University Xi'an 710021 P. R. China
| | - Honglong Chang
- School of Mechanical Engineering, Northwestern Polytechnical University Baoding 710072 P. R. China
| | - Pengfan Dong
- Shaanxi Key Laboratory of Photoelectric Functional Materials and Devices, Xi'an Technological University Xi'an 710021 P. R. China
| | - Zewen Bai
- Shaanxi Key Laboratory of Photoelectric Functional Materials and Devices, Xi'an Technological University Xi'an 710021 P. R. China
| | - Kangnian Zuo
- Shaanxi Key Laboratory of Photoelectric Functional Materials and Devices, Xi'an Technological University Xi'an 710021 P. R. China
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12
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Wang D, Zhou Y, Zhang H, Zhang R, Dong H, Xu R, Cheng Z, He Y, Wang Z. Wafer-Scale Growth of Pristine and Doped Monolayer MoS 2 Films for Electronic Device Applications. Inorg Chem 2020; 59:17356-17363. [PMID: 33210904 DOI: 10.1021/acs.inorgchem.0c02677] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/14/2023]
Abstract
Scalable production and controlled doping of large-area two-dimensional transition-metal dichalcogenide films are fundamental steps toward their applications in electronic devices. Although a variety of methods for preparation of wafer-scale transition-metal dichalcogenide films have been developed, it is still challenging to realize homogeneous doping of the large-area films to modulate their electronic properties. In this paper, we report a new chemical vapor deposition (CVD) method for preparation of wafer-scale pristine and doped monolayer MoS2 films on 2-inch sapphire wafers. The molybdenum precursors are supplied in a "face-to-face" manner from a silica gel plate to the sapphire wafer, which guarantees uniform nucleation and growth of monolayer MoS2. This method can be used to prepare substitutionally doped monolayer MoS2 films. By using ReCl3 as the dopant precursor, we have obtained continuous Re-doped monolayer MoS2 films on sapphire wafers. Elemental analysis confirms successful Re-doping of the MoS2 film. Spherical aberration-corrected scanning transmission electron microscopy characterization reveals that the Re atoms are incorporated at the substitutional Mo sites in the MoS2 lattice. The incorporation of Re atoms leads to n-type doping of MoS2 as evidenced by Kelvin probe force microscope studies. Electrical measurements reveal that the transport properties of the Re-doped monolayer MoS2 is dramatically enhanced as compared with the pristine MoS2. The CVD method developed in this study can be applied to the production of a variety of two-dimensional transition-metal dichalcogenide films suitable for applications in electronic devices.
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Affiliation(s)
- Dongsheng Wang
- Department of Chemistry, Renmin University of China, Beijing 100872, China
| | - Yue Zhou
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Hao Zhang
- Research Institute of Chemical Defense, West Building, 35 Huayuanbei Road, Beijing 100083, China
| | - Rufan Zhang
- Beijing Key Laboratory of Green Chemical Reaction Engineering and Technology, Department of Chemical Engineering, Tsinghua University, Beijing 100084, China
| | - Haoyu Dong
- Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Rui Xu
- Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Zhihai Cheng
- Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Yuhui He
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Zhiyong Wang
- Department of Chemistry, Renmin University of China, Beijing 100872, China
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13
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Zhang L, Wang G, Zhang Y, Cao Z, Wang Y, Cao T, Wang C, Cheng B, Zhang W, Wan X, Lin J, Liang SJ, Miao F. Tuning Electrical Conductance in Bilayer MoS 2 through Defect-Mediated Interlayer Chemical Bonding. ACS NANO 2020; 14:10265-10275. [PMID: 32649178 DOI: 10.1021/acsnano.0c03665] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Interlayer interaction could substantially affect the electrical transport in transition metal dichalcogenides, serving as an effective way to control the device performance. However, it is still challenging to utilize interlayer interaction in weakly interlayer-coupled materials such as pristine MoS2 to realize layer-dependent tunable transport behavior. Here, we demonstrate that, by substitutional doping of vanadium atoms in the Mo sites of the MoS2 lattice, the vanadium-doped monolayer MoS2 device exhibits an ambipolar field effect characteristic, while its bilayer device demonstrates a heavy p-type field effect feature, in sharp contrast to the pristine monolayer and bilayer MoS2 devices, both of which show similar n-type electrical transport behaviors. Moreover, the electrical conductance of the doped bilayer MoS2 device is drastically enhanced with respect to that of the doped monolayer MoS2 device. Employing first-principle calculations, we reveal that such striking behaviors arise from the presence of electrical transport networks associated with the enhanced interlayer hybridization of S-3pz orbitals between adjacent layers activated by vanadium dopants in the bilayer MoS2, which is nevertheless absent in its monolayer counterpart. Our work highlights that the effect of dopant not only is confined in the in-plane electrical transport behavior but also could be used to activate out-of-plane interaction between adjacent layers in tailoring the electrical transport of the bilayer transitional metal dichalcogenides, which may bring different applications in electronic and optoelectronic devices.
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Affiliation(s)
- Lili Zhang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093,China
| | - Gang Wang
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yubo Zhang
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Zhipeng Cao
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093,China
| | - Yu Wang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093,China
| | - Tianjun Cao
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093,China
| | - Cong Wang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093,China
| | - Bin Cheng
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093,China
| | - Wenqing Zhang
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
- Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen 518055, China
| | - Xiangang Wan
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093,China
| | - Junhao Lin
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
- Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen 518055, China
| | - Shi-Jun Liang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093,China
| | - Feng Miao
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093,China
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14
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Nalwa HS. A review of molybdenum disulfide (MoS 2) based photodetectors: from ultra-broadband, self-powered to flexible devices. RSC Adv 2020; 10:30529-30602. [PMID: 35516069 PMCID: PMC9056353 DOI: 10.1039/d0ra03183f] [Citation(s) in RCA: 47] [Impact Index Per Article: 11.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/09/2020] [Accepted: 07/17/2020] [Indexed: 12/23/2022] Open
Abstract
Two-dimensional transition metal dichalcogenides (2D TMDs) have attracted much attention in the field of optoelectronics due to their tunable bandgaps, strong interaction with light and tremendous capability for developing diverse van der Waals heterostructures (vdWHs) with other materials. Molybdenum disulfide (MoS2) atomic layers which exhibit high carrier mobility and optical transparency are very suitable for developing ultra-broadband photodetectors to be used from surveillance and healthcare to optical communication. This review provides a brief introduction to TMD-based photodetectors, exclusively focused on MoS2-based photodetectors. The current research advances show that the photoresponse of atomic layered MoS2 can be significantly improved by boosting its charge carrier mobility and incident light absorption via forming MoS2 based plasmonic nanostructures, halide perovskites-MoS2 heterostructures, 2D-0D MoS2/quantum dots (QDs) and 2D-2D MoS2 hybrid vdWHs, chemical doping, and surface functionalization of MoS2 atomic layers. By utilizing these different integration strategies, MoS2 hybrid heterostructure-based photodetectors exhibited remarkably high photoresponsivity raging from mA W-1 up to 1010 A W-1, detectivity from 107 to 1015 Jones and a photoresponse time from seconds (s) to nanoseconds (10-9 s), varying by several orders of magnitude from deep-ultraviolet (DUV) to the long-wavelength infrared (LWIR) region. The flexible photodetectors developed from MoS2-based hybrid heterostructures with graphene, carbon nanotubes (CNTs), TMDs, and ZnO are also discussed. In addition, strain-induced and self-powered MoS2 based photodetectors have also been summarized. The factors affecting the figure of merit of a very wide range of MoS2-based photodetectors have been analyzed in terms of their photoresponsivity, detectivity, response speed, and quantum efficiency along with their measurement wavelengths and incident laser power densities. Conclusions and the future direction are also outlined on the development of MoS2 and other 2D TMD-based photodetectors.
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Affiliation(s)
- Hari Singh Nalwa
- Advanced Technology Research 26650 The Old Road Valencia California 91381 USA
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15
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Gao H, Suh J, Cao MC, Joe AY, Mujid F, Lee KH, Xie S, Poddar P, Lee JU, Kang K, Kim P, Muller DA, Park J. Tuning Electrical Conductance of MoS 2 Monolayers through Substitutional Doping. NANO LETTERS 2020; 20:4095-4101. [PMID: 32396734 DOI: 10.1021/acs.nanolett.9b05247] [Citation(s) in RCA: 47] [Impact Index Per Article: 11.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
Tuning electrical conductivity of semiconducting materials through substitutional doping is crucial for fabricating functional devices. This, however, has not been fully realized in two-dimensional (2D) materials due to the difficulty of homogeneously controlling the dopant concentrations and the lack of systematic study of the net impact of substitutional dopants separate from that of the unintentional doping from the device fabrication processes. Here, we grow wafer-scale, continuous MoS2 monolayers with tunable concentrations of Nb and Re and fabricate devices using a polymer-free approach to study the direct electrical impact of substitutional dopants in MoS2 monolayers. In particular, the electrical conductivity of Nb doped MoS2 in the absence of electrostatic gating is reproducibly tuned over 7 orders of magnitude by controlling the Nb concentration. Our study further indicates that the dopant carriers do not fully ionize in the 2D limit, unlike in their three-dimensional analogues, which is explained by weaker charge screening and impurity band conduction. Moreover, we show that the dopants are stable, which enables the doped films to be processed as independent building blocks that can be used as electrodes for functional circuitry.
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Affiliation(s)
- Hui Gao
- Department of Chemistry and Chemical Biology, Cornell University, Ithaca, New York 14853, United States
- Department of Chemistry, Pritzker School of Molecular Engineering, and James Frank Institute, University of Chicago, Chicago, Illinois 60637, United States
| | - Joonki Suh
- Department of Chemistry, Pritzker School of Molecular Engineering, and James Frank Institute, University of Chicago, Chicago, Illinois 60637, United States
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Korea
| | - Michael C Cao
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, United States
| | - Andrew Y Joe
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Fauzia Mujid
- Department of Chemistry, Pritzker School of Molecular Engineering, and James Frank Institute, University of Chicago, Chicago, Illinois 60637, United States
| | - Kan-Heng Lee
- Department of Chemistry, Pritzker School of Molecular Engineering, and James Frank Institute, University of Chicago, Chicago, Illinois 60637, United States
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, United States
| | - Saien Xie
- Department of Chemistry, Pritzker School of Molecular Engineering, and James Frank Institute, University of Chicago, Chicago, Illinois 60637, United States
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, United States
| | - Preeti Poddar
- Department of Chemistry, Pritzker School of Molecular Engineering, and James Frank Institute, University of Chicago, Chicago, Illinois 60637, United States
| | - Jae-Ung Lee
- Department of Chemistry, Pritzker School of Molecular Engineering, and James Frank Institute, University of Chicago, Chicago, Illinois 60637, United States
- Department of Physics, Ajou University, Suwon 16499, Korea
| | - Kibum Kang
- Department of Chemistry, Pritzker School of Molecular Engineering, and James Frank Institute, University of Chicago, Chicago, Illinois 60637, United States
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Philip Kim
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
| | - David A Muller
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, United States
| | - Jiwoong Park
- Department of Chemistry, Pritzker School of Molecular Engineering, and James Frank Institute, University of Chicago, Chicago, Illinois 60637, United States
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16
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Chen F, Su W, Zhao S, Lv Y, Ding S, Fu L. Morphological evolution of atomically thin MoS 2 flakes synthesized by a chemical vapor deposition strategy. CrystEngComm 2020. [DOI: 10.1039/d0ce00558d] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/18/2023]
Abstract
The evolution of 2D MoS2 flakes from dendritic shape to hexagonal can be realized by the reaction of S and MoO3 powders at different growth temperatures via the chemical vapor deposition method.
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Affiliation(s)
- Fei Chen
- College of Materials and Environmental Engineering
- Hangzhou Dianzi University
- Hangzhou
- China
| | - Weitao Su
- School of Sciences
- Hangzhou Dianzi University
- Hangzhou
- China
| | - Shichao Zhao
- College of Materials and Environmental Engineering
- Hangzhou Dianzi University
- Hangzhou
- China
| | - Yanfei Lv
- College of Materials and Environmental Engineering
- Hangzhou Dianzi University
- Hangzhou
- China
| | - Su Ding
- College of Materials and Environmental Engineering
- Hangzhou Dianzi University
- Hangzhou
- China
| | - Li Fu
- College of Materials and Environmental Engineering
- Hangzhou Dianzi University
- Hangzhou
- China
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