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Roy A, Kar S, Ghosal R, Mukhopadhyay R, Naskar K, Bhowmick AK. Unique graphene‐carbon black hybrid nanofiller by a micromechanical cleavage technique as a reinforcing agent in elastomers: Fundamental and experimental studies. J Appl Polym Sci 2023. [DOI: 10.1002/app.53575] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2023]
Affiliation(s)
- Amrita Roy
- Rubber Technology Centre, IIT Kharagpur Kharagpur West Bengal India
| | - Saptarshi Kar
- Birla Carbon India Private Limited, MIDC Taloja Mumbai Maharashtra India
| | - Ranjan Ghosal
- Birla Carbon India Private Limited, MIDC Taloja Mumbai Maharashtra India
| | | | - Kinsuk Naskar
- Rubber Technology Centre, IIT Kharagpur Kharagpur West Bengal India
| | - Anil K. Bhowmick
- Rubber Technology Centre, IIT Kharagpur Kharagpur West Bengal India
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Zeng G, Li XX, Li YC, Chen DB, Chen YC, Zhao XF, Chen N, Wang TY, Zhang DW, Lu HL. A Heterostructured Graphene Quantum Dots/β-Ga 2O 3 Solar-Blind Photodetector with Enhanced Photoresponsivity. ACS APPLIED MATERIALS & INTERFACES 2022; 14:16846-16855. [PMID: 35363489 DOI: 10.1021/acsami.2c00671] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The superior optical and electronic characteristics of quasi-two-dimensional β-Ga2O3 make it suitable for solar-blind (200-280 nm) photodetectors (PDs). The metal-semiconductor-metal (MSM) PDs commonly suffer from low photoresponsivity, slow response speed, and a narrow detection wavelength range despite their simple fabrication process. Herein, we report a high-performance MSM PD by integrating exfoliated β-Ga2O3 flakes with zero-dimensional graphene quantum dots (GQDs), which exhibits the advantages of enhancing the photoresponsivity, shortening the photoresponse time, and stimulating a broad range of photon detection. The hybrid GQDs/β-Ga2O3 heterostructure PD is sensitive to deep-ultraviolet (DUV) light (250 nm) with an ultrahigh responsivity (R of ∼2.4 × 105 A/W), a large detectivity (D* of ∼4.3 × 1013 Jones), an excellent external quantum efficiency (EQE of ∼1.2 × 108%), and a fast photoresponse (150 ms), which is superior to the bare β-Ga2O3 PD. These improvements result from effective charge transfer due to the introduction of GQDs, which enhance the light absorption and the generation of electron-hole pairs. In addition, the hybrid GQDs/β-Ga2O3 PD also exhibits better photoelectric performance than the bare β-Ga2O3 PD at a 1000 nm wavelength. As a conclusion, the hybrid GQDs/β-Ga2O3 DUV photodetector shows potential applications in commercial optoelectronic products and provides an alternative solution for the design and preparation of high-performance photodetectors.
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Affiliation(s)
- Guang Zeng
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Xiao-Xi Li
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Yu-Chun Li
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Ding-Bo Chen
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Yu-Chang Chen
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Xue-Feng Zhao
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Na Chen
- Key Laboratory of Specialty Fiber Optics and Optical Access Networks, Shanghai Institute Communication and Data Science, Shanghai University, Shanghai 200444, China
| | - Ting-Yun Wang
- Key Laboratory of Specialty Fiber Optics and Optical Access Networks, Shanghai Institute Communication and Data Science, Shanghai University, Shanghai 200444, China
| | - David Wei Zhang
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Hong-Liang Lu
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China
- Yiwu Research Institute of Fudan University, Chengbei Road, Yiwu City, Zhejiang 322000, China
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Min M, Sakri S, Saenz GA, Kaul AB. Photophysical Dynamics in Semiconducting Graphene Quantum Dots Integrated with 2D MoS 2 for Optical Enhancement in the Near UV. ACS APPLIED MATERIALS & INTERFACES 2021; 13:5379-5389. [PMID: 33471523 DOI: 10.1021/acsami.0c18615] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The hybrid structure of zero-dimensional (0D) graphene quantum dots (GQDs) and semiconducting two-dimensional (2D) MoS2 has been investigated, which exhibit outstanding properties for optoelectronic devices surpassing the limitations of MoS2 photodetectors where the GQDs extend the optical absorption into the near-UV regime. The GQDs and MoS2 films are characterized by Raman and photoluminescence (PL) spectroscopies, along with atomic force microscopy. After outlining the fabrication of our 0D-2D heterostructure photodetectors comprising GQDs with bulk MoS2 sheets, their photoresponse to the incoming radiation was measured. The hybrid GQD/MoS2 heterostructure photodetector exhibits a high photoresponsivity R of more than 1200 A W-1 at 0.64 mW/cm2 at room temperature T. The T-dependent optoelectronic measurements revealed a peak R of ∼544 A W-1 at 245 K, examined from 5.4 K up to 305 K with an incoming white light power density of 3.2 mW/cm2. A tunable laser revealed the photocurrent to be maximal at lower wavelengths in the near ultraviolet (UV) over the 400-1100 nm spectral range, where the R of the hybrid GQDs/MoS2 was ∼775 A W-1, while a value of 2.33 × 1012 Jones was computed for the detectivity D* at 400 nm. The external quantum efficiency was measured to be ∼99.8% at 650 nm, which increased to 241% when the wavelength of the incoming laser was reduced to 400 nm. Time-resolved measurements of the photocurrent for the hybrid devices resulted in a rise time τrise and a fall time τfall of ∼7 and ∼25 ms, respectively, at room T, which are 10× lower compared to previous reports. From our promising results, we conclude that the GQDs exhibit a sizable band gap upon optical excitation, where photocarriers are injected into the MoS2 films, endowing the hybrids with long carrier lifetimes to enable efficient light absorption beyond the visible and into the near-UV regime. The GQD-MoS2 structure is thus an enabling platform for high-performance photodetectors, optoelectronic circuits, and quantum devices.
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Affiliation(s)
- Misook Min
- Department of Materials Science and Engineering, PACCAR Technology Institute, University of North Texas, Denton, Texas 76203, United States
| | - Shambhavi Sakri
- Department of Materials Science and Engineering, PACCAR Technology Institute, University of North Texas, Denton, Texas 76203, United States
| | - Gustavo A Saenz
- Department of Electrical Engineering, University of North Texas, Denton, Texas 76203, United States
| | - Anupama B Kaul
- Department of Materials Science and Engineering, PACCAR Technology Institute, University of North Texas, Denton, Texas 76203, United States
- Department of Electrical Engineering, University of North Texas, Denton, Texas 76203, United States
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Min M, Hossain RF, Adhikari N, Kaul AB. Inkjet-Printed Organohalide 2D Layered Perovskites for High-Speed Photodetectors on Flexible Polyimide Substrates. ACS APPLIED MATERIALS & INTERFACES 2020; 12:10809-10819. [PMID: 32068396 DOI: 10.1021/acsami.9b21053] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The synthesis of solution-processed two-dimensional (2D) layered organohalide (CH3(CH2)3NH3)2(CH3NH3)n-1PbnI3n+1 (n = 2, 3, and 4) perovskites is presented, where inkjet printing was used to fabricate heterostructure flexible photodetector (PD) devices on polyimide (PI) substrates. Inks for the n = 4 formulation were developed to inkjet-print PD devices that were photoresponsive to broadband incoming radiation in the visible regime, where the peak photoresponsivity R was calculated to be ∼0.17 A/W, which is higher compared to prior reports, while the detectivity D was measured to be ∼3.7 × 1012 Jones at a low light intensity F ≈ 0.6 mW/cm2. The ON/OFF ratio was also high (∼2.3 × 103), while the response time τ on the rising and falling edges was measured to be τrise ≈ 24 ms and τfall ≈ 65 ms, respectively. Our strain-dependent measurements, conducted here for the first time for inkjet-printed perovskite PDs, revealed that the Ip decreased by only ∼27% with bending (radius of curvature of ∼0.262 cm-1). This work demonstrates the tremendous potential of the inkjet-printed, composition-tunable, organohalide 2D perovskite heterostructures for high-performance PDs, where the techniques are readily translatable toward flexible solar cell platforms as well.
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Affiliation(s)
- Misook Min
- Department of Materials Science and Engineering, PACCAR Technology Institute, University of North Texas, Denton, Texas 76203, United States
| | - Ridwan F Hossain
- Department of Materials Science and Engineering, PACCAR Technology Institute, University of North Texas, Denton, Texas 76203, United States
- Department of Electrical Engineering, University of North Texas, Denton, Texas 76203, United States
| | - Nirmal Adhikari
- Department of Electrical and Computer Engineering, University of Texas at El Paso, El Paso, Texas 79968, United States
| | - Anupama B Kaul
- Department of Materials Science and Engineering, PACCAR Technology Institute, University of North Texas, Denton, Texas 76203, United States
- Department of Electrical Engineering, University of North Texas, Denton, Texas 76203, United States
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