Semimetallic Graphene for Infrared Sensing

Transparent Patternable Large-Area Graphene p-n Junctions by Photoinduced Electron Doping

We present a novel approach to achieve n-type doping in graphene and create graphene p-n junctions through a photoinduced electron doping method using photobase generators (PBGs). The unique properties of PBGs allow us to spatially and temporally control the doping process via light activation. The selective irradiation of specific regions on the graphene film enables switching their doping from p- to n-type, as confirmed by changes in the electromotive force and Seebeck and Hall coefficients. We demonstrate a stable (over 2 months) high electron mobility exceeding 1000 cm2 V-1s-1 using Hall effect measurements. The precise control of doping and the creation of p-n junctions in graphene offer exciting possibilities for various electronic, optoelectronic, and thermoelectric applications. Furthermore, we fabricate transparent graphene thermocouples with a high electromotive force of approximately ca. 80 μV/K, which validates the reliability and effectiveness of our approach for temperature sensing applications. This work paves the way for high-performance graphene-based electronic devices via controlled doping and patterning techniques. These findings provide valuable insights for the practical implementation of graphene in various fields.

Narrowband mid-infrared thermal emitters based on the Fabry-Perot type of bound states in the continuum

The development of narrow-band thermal emitters operating at mid-infrared (MIR) wavelengths is vital in numerous research fields. However, the previously reported results obtained with metallic metamaterials were not successful in achieving narrow bandwidths in the MIR region, which suggests low temporal coherence of the obtained thermal emissions. In this work, we demonstrate a new design strategy to realize this target by employing the bound state in the continuum (BIC) modes of the Fabry-Perot (FP) type. When a disk array of high-index dielectric supporting Mie resonances is separated from a highly reflective substrate by a low refractive index spacer layer with appropriate thickness, the destructive interference between the disk array and its mirror with respect to the substrate leads to the formation of FP-type BIC. Quasi-BIC resonances with ultra-high Q-factor (>10³) are achievable by engineering the thickness of the buffer layer. This strategy is exemplified by an efficient thermal emitter operating at a wavelength of 4.587 µm with the on-resonance emissivity of near-unity and the full-width at half-maximum (FWHM) less than 5 nm even along with consideration of metal substrate dissipation. The new thermal radiation source proposed in this work offers ultra-narrow bandwidth and high temporal coherence along with the economic advantages required for practical applications, compared to those infrared sources made from III-V semiconductors.

Low-Dimensional Layered Light-Sensitive Memristive Structures for Energy-Efficient Machine Vision

Layered two-dimensional (2D) and quasi-zero-dimensional (0D) materials effectively absorb radiation in the wide ultraviolet, visible, infrared, and terahertz ranges. Photomemristive structures made of such low-dimensional materials are of great interest for creating optoelectronic platforms for energy-efficient storage and processing of data and optical signals in real time. Here, photosensor and memristor structures based on graphene, graphene oxide, bismuth oxyselenide, and transition metal dichalcogenides are reviewed from the point of view of application in broadband image recognition in artificial intelligence systems for autonomous unmanned vehicles, as well as the compatibility of the formation of layered neuromorphic structures with CMOS technology.

Stability and Bandgap Engineering of In1-xGaxSe Monolayer

Bandgap engineering of semiconductor materials represents a crucial step for their employment in optoelectronics and photonics. It offers the opportunity to tailor their electronic and optical properties, increasing the degree of freedom in designing new devices and widening the range of their possible applications. Here, we report the bandgap engineering of a layered InSe monolayer, a superior electronic and optical material, by substituting In atoms with Ga atoms. We developed a theoretical understanding of In1−xGaxSe stability and electronic properties in its whole compositional range (x=0−1) through first-principles density functional theory calculations, the cluster expansion method, and kinetic Monte Carlo simulations. Our findings highlight the possibility of modulating the InGaSe bandgap by ≈0.41 eV and reveal that this compound is an excellent candidate to be employed in many optoelectronic and photonic devices.