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Kirihara K, Okigawa Y, Ishihara M, Hasegawa M, Mukaida M, Horike S, Wang Y, Wei Q. Transparent Patternable Large-Area Graphene p-n Junctions by Photoinduced Electron Doping. ACS APPLIED MATERIALS & INTERFACES 2024; 16:1198-1205. [PMID: 38048275 DOI: 10.1021/acsami.3c12419] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/06/2023]
Abstract
We present a novel approach to achieve n-type doping in graphene and create graphene p-n junctions through a photoinduced electron doping method using photobase generators (PBGs). The unique properties of PBGs allow us to spatially and temporally control the doping process via light activation. The selective irradiation of specific regions on the graphene film enables switching their doping from p- to n-type, as confirmed by changes in the electromotive force and Seebeck and Hall coefficients. We demonstrate a stable (over 2 months) high electron mobility exceeding 1000 cm2 V-1s-1 using Hall effect measurements. The precise control of doping and the creation of p-n junctions in graphene offer exciting possibilities for various electronic, optoelectronic, and thermoelectric applications. Furthermore, we fabricate transparent graphene thermocouples with a high electromotive force of approximately ca. 80 μV/K, which validates the reliability and effectiveness of our approach for temperature sensing applications. This work paves the way for high-performance graphene-based electronic devices via controlled doping and patterning techniques. These findings provide valuable insights for the practical implementation of graphene in various fields.
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Affiliation(s)
- Kazuhiro Kirihara
- Advanced Operando-Measurement Technology Open Innovation Laboratory (OPERANDO-OIL), National Institute of Advanced Industrial Science and Technology (AIST), 5-1-5 Kashiwanoha, Kashiwa 277-8565, Japan
- Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
| | - Yuki Okigawa
- Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
- Nano Carbon Device Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
| | - Masatou Ishihara
- Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
| | - Masataka Hasegawa
- Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
| | - Masakazu Mukaida
- Advanced Operando-Measurement Technology Open Innovation Laboratory (OPERANDO-OIL), National Institute of Advanced Industrial Science and Technology (AIST), 5-1-5 Kashiwanoha, Kashiwa 277-8565, Japan
| | - Shohei Horike
- Department of Chemical Science and Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai-cho, Kobe 657-8501, Japan
- Research Center for Membrane and Film Technology, Kobe University, 1-1 Rokkodai-cho, Kobe 657-8501, Japan
- Center for Environmental Management, Kobe University, 1-1 Rokkodai-cho, Kobe 657-8501, Japan
| | - Yuqing Wang
- Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
- Graduate School of Life and Environmental Sciences, University of Tsukuba, 1-1-1, Tennodai, Tsukuba, Ibaraki 305-8572, Japan
| | - Qingshuo Wei
- Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
- Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8577, Japan
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Li X, Maqbool E, Han Z. Narrowband mid-infrared thermal emitters based on the Fabry-Perot type of bound states in the continuum. OPTICS EXPRESS 2023; 31:20338-20344. [PMID: 37381430 DOI: 10.1364/oe.488846] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/28/2023] [Accepted: 05/21/2023] [Indexed: 06/30/2023]
Abstract
The development of narrow-band thermal emitters operating at mid-infrared (MIR) wavelengths is vital in numerous research fields. However, the previously reported results obtained with metallic metamaterials were not successful in achieving narrow bandwidths in the MIR region, which suggests low temporal coherence of the obtained thermal emissions. In this work, we demonstrate a new design strategy to realize this target by employing the bound state in the continuum (BIC) modes of the Fabry-Perot (FP) type. When a disk array of high-index dielectric supporting Mie resonances is separated from a highly reflective substrate by a low refractive index spacer layer with appropriate thickness, the destructive interference between the disk array and its mirror with respect to the substrate leads to the formation of FP-type BIC. Quasi-BIC resonances with ultra-high Q-factor (>103) are achievable by engineering the thickness of the buffer layer. This strategy is exemplified by an efficient thermal emitter operating at a wavelength of 4.587 µm with the on-resonance emissivity of near-unity and the full-width at half-maximum (FWHM) less than 5 nm even along with consideration of metal substrate dissipation. The new thermal radiation source proposed in this work offers ultra-narrow bandwidth and high temporal coherence along with the economic advantages required for practical applications, compared to those infrared sources made from III-V semiconductors.
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Low-Dimensional Layered Light-Sensitive Memristive Structures for Energy-Efficient Machine Vision. ELECTRONICS 2022. [DOI: 10.3390/electronics11040619] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/04/2023]
Abstract
Layered two-dimensional (2D) and quasi-zero-dimensional (0D) materials effectively absorb radiation in the wide ultraviolet, visible, infrared, and terahertz ranges. Photomemristive structures made of such low-dimensional materials are of great interest for creating optoelectronic platforms for energy-efficient storage and processing of data and optical signals in real time. Here, photosensor and memristor structures based on graphene, graphene oxide, bismuth oxyselenide, and transition metal dichalcogenides are reviewed from the point of view of application in broadband image recognition in artificial intelligence systems for autonomous unmanned vehicles, as well as the compatibility of the formation of layered neuromorphic structures with CMOS technology.
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Stability and Bandgap Engineering of In1-xGaxSe Monolayer. NANOMATERIALS 2022; 12:nano12030515. [PMID: 35159860 PMCID: PMC8839788 DOI: 10.3390/nano12030515] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/31/2021] [Revised: 01/26/2022] [Accepted: 01/28/2022] [Indexed: 02/05/2023]
Abstract
Bandgap engineering of semiconductor materials represents a crucial step for their employment in optoelectronics and photonics. It offers the opportunity to tailor their electronic and optical properties, increasing the degree of freedom in designing new devices and widening the range of their possible applications. Here, we report the bandgap engineering of a layered InSe monolayer, a superior electronic and optical material, by substituting In atoms with Ga atoms. We developed a theoretical understanding of In1−xGaxSe stability and electronic properties in its whole compositional range (x=0−1) through first-principles density functional theory calculations, the cluster expansion method, and kinetic Monte Carlo simulations. Our findings highlight the possibility of modulating the InGaSe bandgap by ≈0.41 eV and reveal that this compound is an excellent candidate to be employed in many optoelectronic and photonic devices.
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An J, Wang B, Shu C, Wu W, Sun B, Zhang Z, Li D, Li S. Research development of 2D materials based photodetectors towards mid‐infrared regime. NANO SELECT 2020. [DOI: 10.1002/nano.202000237] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/06/2023] Open
Affiliation(s)
- Junru An
- State Key Laboratory of Applied Optics Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun P. R. China
- University of Chinese Academy of Sciences (UCAS) Beijing P. R. China
| | - Bin Wang
- State Key Laboratory of Applied Optics Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun P. R. China
| | - Chang Shu
- Institute of Functional Nano and Soft Materials (FUNSOM) Jiangsu Key Laboratory for Carbon‐Based Functional Materials and Devices Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University Suzhou P. R. China
| | - Wenming Wu
- State Key Laboratory of Applied Optics Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun P. R. China
- University of Chinese Academy of Sciences (UCAS) Beijing P. R. China
| | - Baoquan Sun
- Institute of Functional Nano and Soft Materials (FUNSOM) Jiangsu Key Laboratory for Carbon‐Based Functional Materials and Devices Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University Suzhou P. R. China
| | - Zhiyu Zhang
- University of Chinese Academy of Sciences (UCAS) Beijing P. R. China
- Key Laboratory of Optical System Advanced Manufacturing Technology Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun China
| | - Dabing Li
- University of Chinese Academy of Sciences (UCAS) Beijing P. R. China
- State Key Laboratory of Luminescence and Applications Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun P. R. China
| | - Shaojuan Li
- State Key Laboratory of Applied Optics Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun P. R. China
- University of Chinese Academy of Sciences (UCAS) Beijing P. R. China
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