Low-Frequency Carrier Kinetics in Perovskite Solar Cells

Progress and Challenges for Memtransistors in Neuromorphic Circuits and Systems

Due to the increasing importance of artificial intelligence (AI), significant recent effort has been devoted to the development of neuromorphic circuits that seek to emulate the energy-efficient information processing of the brain. While non-volatile memory (NVM) based on resistive switches, phase-change memory, and magnetic tunnel junctions has shown potential for implementing neural networks, additional multi-terminal device concepts are required for more sophisticated bio-realistic functions. Of particular interest are memtransistors based on low-dimensional nanomaterials, which are capable of electrostatically tuning memory and learning behavior at the device level. Herein, a conceptual overview of the memtransistor is provided in the context of neuromorphic circuits. Recent progress is surveyed for memtransistors and related multi-terminal NVM devices including dual-gated floating-gate memories, dual-gated ferroelectric transistors, and dual-gated van der Waals heterojunctions. The different materials systems and device architectures are classified based on the degree of control and relative tunability of synaptic behavior, with an emphasis on device concepts that harness the reduced dimensionality, weak electrostatic screening, and phase-changes properties of nanomaterials. Finally, strategies for achieving wafer-scale integration of memtransistors and multi-terminal NVM devices are delineated, with specific attention given to the materials challenges for practical neuromorphic circuits.

A review of design approaches for the implementation of low-frequency noise measurement systems

Electronic noise has its roots in the fundamental physical interactions between matter and charged particles, carrying information about the phenomena that occur at the microscopic level. Therefore, Low-Frequency Noise Measurements (LFNM) are a well-established technique for the characterization of electron devices and materials and, compared to other techniques, they offer the advantage of being non-destructive and of providing a more detailed view of what happens in the matter during the manifestation of physical or chemical phenomena. For this reason, LFNM acquire particular importance in the modern technological era in which the introduction of new advanced materials requires in-depth and thorough characterization of the conduction phenomena. LFNM also find application in the field of sensors, as they allow to obtain more selective sensing systems even starting from conventional sensors. Performing meaningful noise measurements, however, requires that the background noise introduced by the measurement chain be much smaller than the noise to be detected and the instrumentation available on the market does not always meet the specifications required for reaching the ultimate sensitivity. Researchers willing to perform LFNM must often resort to the design of dedicated instrumentation in their own laboratories, but their cultural background does not necessarily include the ability to design, build, and test dedicated low noise instrumentation. In this review, we have tried to provide as much theoretical and practical guidelines as possible, so that even researchers with a limited background in electronic engineering can find useful information in developing or customizing low noise instrumentation.

Graphite/Carbon Black Counter Electrode Deposition Methods to Improve the Efficiency and Stability of Hole-Transport-Layer-Free Perovskite Solar Cells

The interfacial compatibility between the graphite/carbon black composite counter electrode (Gr/CB CE) and the perovskite layer is a crucial determinant of the performance of the hole-transport-layer-free carbon-based perovskite solar cells, and judicious selection of the Gr/CB CE application method is essential for achieving an optimum contact. In this work, three different types of Gr/CB CEs application methods are investigated: (1) deposition of Gr/CB on the fluorine-doped tin oxide (FTO) substrate, followed by clamping to the perovskite layer, (2) direct deposition of Gr/CB onto the perovskite layer, and (3) deposition of Gr/CB onto the PbI₂ precursor layer, followed by immersion in methylammonium iodide solution for the in situ conversion of PbI₂ to perovskite. The results revealed that Method 3 produced superior Gr/CB-perovskite contacts, resulting in up to 8.81% power conversion efficiency. The devices prepared using Method 3 also exhibited the best stability in the air, retaining 71.1% of their original efficiency after 1600 h of continuous testing. These results demonstrate that Gr/CB CEs can be considered excellent alternatives to the costly noble metals often employed in perovskite solar cells (PSCs) when deposited using a suitable technique.

Systematic Merging of Nonfullerene Acceptor π-Extension and Tetrafluorination Strategies Affords Polymer Solar Cells with >16% Efficiency

The end-capping group (EG) is the essential electron-withdrawing component of nonfullerene acceptors (NFAs) in bulk heterojunction (BHJ) organic solar cells (OSCs). To systematically probe the impact of two frequent EG functionalization strategies, π-extension and halogenation, in A-DAD-A type NFAs, we synthesized and characterized four such NFAs: BT-BIC, LIC, L4F, and BO-L4F. To assess the relative importance of these strategies, we contrast these NFAs with the baseline acceptors, Y5 and Y6. Up to 16.6% power conversion efficiency (PCE) in binary inverted OSCs with BT-BO-L4F combining π-extension and halogenation was achieved. When these two factors are combined, the effect on optical absorption is cumulative. Single-crystal π-π stacking distances are similar for the EG strategies of π-extension. Increasing the alkyl substituent length from BT-L4F to BT-BO-L4F significantly alters the packing motif and eliminates the EG core interactions of BT-L4F. Electronic structure computations reveal some of the largest NFA π-π electronic couplings observed to date, 103.8 meV in BT-L4F and 47.5 meV in BT-BO-L4F. Computed electronic reorganization energies, 132 and 133 meV for BT-L4F and BT-BO-L4F, respectively, are also lower than Y6 (150 meV). BHJ blends show preferential π-face-on orientation, and both fluorination and π-extension increase NFA crystallinity. Femto/nanosecond transient absorption spectroscopy (fs/nsTA) and integrated photocurrent device analysis (IPDA) indicate that π-extension modifies the phase separation to enhance film ordering and carrier mobility, while fluorination suppresses unimolecular recombination. This systematic study highlights the synergistic effects of NFA π-extension and fluorination in affording efficient OSCs and provides insights into designing next-generation materials.

What Can Electric Noise Spectroscopy Tell Us on the Physics of Perovskites?

Electric noise spectroscopy is a non-destructive and a very sensitive method for studying the dynamic behaviors of the charge carriers and the kinetic processes in several condensed matter systems, with no limitation on operating temperatures. This technique has been extensively used to investigate several perovskite compounds, manganese oxides (La1−xSrxMnO3, La0.7Ba0.3MnO3, and Pr0.7Ca0.3MnO3), and a double perovskite (Sr2FeMoO6), whose properties have recently attracted great attention. In this work are reported the results from a detailed electrical transport and noise characterizations for each of the above cited materials, and they are interpreted in terms of specific physical models, evidencing peculiar properties, such as quantum interference effects and charge density waves.

Understanding the thermal degradation mechanism of perovskite solar cells via dielectric and noise measurements

Long term stability is a major obstacle to the success of perovskite solar cell (PSC) photovoltaic technology. PSC performance deteriorates significantly in the presence of humidity, oxygen and exposure to UV light and heat. Here the change in charge transport properties of PSC with temperature and the associated significant drop in device performance at high temperature have been investigated. The latter is shown to be primarily due to an increase in charge carrier recombination, which impacts the open-circuit voltage. To understand the pathway of temperature-induced degradation, low-frequency 1/f noise characteristics, and the capacitance-frequency, as well as capacitance-voltage characteristics have been investigated under various conditions. The results show that at high operating temperature accumulation of ions and charge carriers at the interface increase the surface recombination. Aging experiments at different temperatures show high stability of PSCs up to temperature <70 °C, but a drastic, irreversible degradation occurs at higher temperature (≥80 °C). Low-frequency 1/f noise study revealed that the magnitude of normalized noise in degraded perovskite solar cells is four orders of magnitude higher than the pristine device. This study shows the power of low-frequency noise measurement technique as a highly sensitive non-invasive tool to study the degradation mechanism of PSCs.

Crystallography, Morphology, Electronic Structure, and Transport in Non-Fullerene/Non-Indacenodithienothiophene Polymer:Y6 Solar Cells

Emerging nonfullerene acceptors (NFAs) with crystalline domains enable high-performance bulk heterojunction (BHJ) solar cells. Thermal annealing is known to enhance the BHJ photoactive layer morphology and performance. However, the microscopic mechanism of annealing-induced performance enhancement is poorly understood in emerging NFAs, especially regarding competing factors. Here, optimized thermal annealing of model system PBDB-TF:Y6 (Y6 = 2,2'-((2Z,2'Z)-((12,13-bis(2-ethylhexyl)-3,9-diundecyl-12,13-dihydro-[1,2,5]thiadiazolo[3,4-e]thieno[2″,3'':4',5']thieno[2',3':4,5]pyrrolo[3,2-g]thieno[2',3':4,5]-thieno[3,2-b]indole-2,10-diyl)bis(methanylylidene))bis(5,6-difluoro-3-oxo-2,3-dihydro-1H-indene-2,1-diylidene))dimalononitrile) decreases the open circuit voltage (V_OC) but increases the short circuit current (J_SC) and fill factor (FF) such that the resulting power conversion efficiency (PCE) increases from 14 to 15% in the ambient environment. Here we systematically investigate these thermal annealing effects through in-depth characterizations of carrier mobility, film morphology, charge photogeneration, and recombination using SCLC, GIXRD, AFM, XPS, NEXAFS, R-SoXS, TEM, STEM, fs/ns TA spectroscopy, 2DES, and impedance spectroscopy. Surprisingly, thermal annealing does not alter the film crystallinity, R-SoXS characteristic size scale, relative average phase purity, or TEM-imaged phase separation but rather facilitates Y6 migration to the BHJ film top surface, changes the PBDB-TF/Y6 vertical phase separation and intermixing, and reduces the bottom surface roughness. While these morphology changes increase bimolecular recombination (BR) and lower the free charge (FC) yield, they also increase the average electron and hole mobility by at least 2-fold. Importantly, the increased μ_h dominates and underlies the increased FF and PCE. Single-crystal X-ray diffraction reveals that Y6 molecules cofacially pack via their end groups/cores, with the shortest π-π distance as close as 3.34 Å, clarifying out-of-plane π-face-on molecular orientation in the nanocrystalline BHJ domains. DFT analysis of Y6 crystals reveals hole/electron reorganization energies of as low as 160/150 meV, large intermolecular electronic coupling integrals of 12.1-37.9 meV rationalizing the 3D electron transport, and relatively high μ_e of 10^-4 cm² V^-1 s^-1. Taken together, this work clarifies the richness of thermal annealing effects in high-efficiency NFA solar cells and tasks for future materials design.

Unveiling the Morphology Effect on the Negative Capacitance and Large Ideality Factor in Perovskite Light-Emitting Diodes

Perovskite light-emitting diodes have almost reached the threshold for potential commercialization within a few years of research. However, there are still some unsolved puzzles such as large ideality factor and the presence of large negative capacitance especially at the low-frequency regime yet to be addressed. Here, we have fabricated a methylammonium lead tri-bromide perovskite n-i-p structure for light-emitting diodes from a smooth and textured emissive layer and demonstrated for the first time that these two factors are strongly dependent on the perovskite film morphology. Bias-dependent capacitance measurement also reveals the transition between negative to positive capacitance in textured films at the low-frequency regime. We have observed an anomalous capacitive behavior at the mid-frequency regime in smooth perovskite films but not in textured films. The relatively large ideality factor and anomalous capacitive behavior observed in perovskite light-emitting diodes are due to the presence of strong coupling between ions and electrons near the electrode interface. Therefore, the ideality factor and anomalous capacitance at the mid-frequency regime can be decreased by minimizing electronic-ionic coupling in textured perovskite films, while light outcoupling can be improved significantly.

Colloidal quantum dot light-emitting diodes employing solution-processable tin dioxide nanoparticles in an electron transport layer

Colloidal quantum-dot-based light-emitting diodes (QD-LEDs) have gained tremendous attention as great candidates to potentially replace current emissive display technologies. The luminescence efficiency of a QD LED has increased rapidly in the past decade; this was triggered by the use of metal oxides in the charge transport layers, particularly zinc oxide (ZnO) for the electron transport layer (ETL). However, the ZnO ETL often results in undesirable device performance such as efficiency roll-off and poor device stability because of excessive electron injection into the QD emissive layer. Here, we explore solution-processable tin dioxide (SnO₂) nanoparticles (NPs) as alternatives to ZnO NPs for the ETL in QD-LEDs. We evaluated the thin-film quality and electrical performance of SnO₂ NPs and then applied them to the ETL for constructing QD-LEDs. As a result of the smooth surface morphology, moderate electron-transport ability, and lower carrier concentration compared to ZnO NPs, the QD-LED with SnO₂ NP-ETL exhibited improved performance in terms of lower turn-on and operating voltages, maximum luminance, improved efficiency roll-off, and improved power efficiency over the reference device with the ZnO NP-ETL. This shows promising potential for SnO₂ NPs in optoelectronic applications.

QD-LEDs have gained tremendous attention to potentially replace current emissive display technologies. Here, we explore solution-processable SnO₂ nanoparticles (NPs) as alternatives to ZnO for the electron transporting layer in QD-LEDs.