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Im C, Kim J, Cho NK, Park J, Lee EG, Lee SE, Na HJ, Gong YJ, Kim YS. Analysis of Interface Phenomena for High-Performance Dual-Stacked Oxide Thin-Film Transistors via Equivalent Circuit Modeling. ACS APPLIED MATERIALS & INTERFACES 2021; 13:51266-51278. [PMID: 34668371 DOI: 10.1021/acsami.1c17351] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Oxide thin-film transistors (TFTs) have attracted much attention because they can be applied to flexible and large-scaled switching devices. Especially, oxide semiconductors (OSs) have been developed as active layers of TFTs. Among them, indium-gallium-zinc oxide (IGZO) is actively used in the organic light-emitting diode display field. However, despite their superior off-state properties, IGZO TFTs are limited by low field-effect mobility, which critically affects display resolution and power consumption. Herein, we determine new working mechanisms in dual-stacked OS, and based on this, we develop a dual-stacked OS-based TFT with improved performance: high field-effect mobility (∼80 cm2/V·s), ideal threshold voltage near 0 V, high on-off current ratio (>109), and good stability at bias stress. Induced areas are formed at the interface by the band offset: band offset-induced area (BOIA) and BOIA-induced area (BIA). They connect the gate bias-induced area (GBIA) and electrode bias-induced area (EBIA), resulting in high current flow. Equivalent circuit modeling and the transmission line method are also introduced for more precise verification. By verifying current change with gate voltage in the single OS layer, the current flowing direction in the dual-stacked OS is calculated and estimated. This is powerful evidence to understand the conduction mechanism in a dual-stacked OS-based TFT, and it will provide new design rules for high-performance OS-based TFTs.
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Affiliation(s)
- Changik Im
- Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea
| | - Jiyeon Kim
- Department of Applied Bioengineering, Graduate School of Convergence Science and Technology, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea
| | - Nam-Kwang Cho
- Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea
| | - Jintaek Park
- Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea
- Samsung Display Company, Ltd., 1 Samsung-ro, Giheung-gu, Yongin-si, Gyeonggi-do 17113, Republic of Korea
| | - Eun Goo Lee
- Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea
- Samsung Display Company, Ltd., 1 Samsung-ro, Giheung-gu, Yongin-si, Gyeonggi-do 17113, Republic of Korea
| | - Sung-Eun Lee
- Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea
- Samsung Display Company, Ltd., 1 Samsung-ro, Giheung-gu, Yongin-si, Gyeonggi-do 17113, Republic of Korea
| | - Hyun-Jae Na
- Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea
- Samsung Display Company, Ltd., 1 Samsung-ro, Giheung-gu, Yongin-si, Gyeonggi-do 17113, Republic of Korea
| | - Yong Jun Gong
- Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea
| | - Youn Sang Kim
- Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea
- Department of Applied Bioengineering, Graduate School of Convergence Science and Technology, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, and Institute of Chemical Processes, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea
- Advanced Institutes of Convergence Technology, 145 Gwanggyo-ro, Yeongtong-gu, Suwon 16229, Republic of Korea
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Yoo H, Lee IS, Jung S, Rho SM, Kang BH, Kim HJ. A Review of Phototransistors Using Metal Oxide Semiconductors: Research Progress and Future Directions. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2006091. [PMID: 34048086 DOI: 10.1002/adma.202006091] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/06/2020] [Revised: 10/15/2020] [Indexed: 06/12/2023]
Abstract
Metal oxide thin-film transistors have been continuously researched and mass-produced in the display industry. However, their phototransistors are still in their infancy. In particular, utilizing metal oxide semiconductors as phototransistors is difficult because of the limited light absorption wavelength range and persistent photocurrent (PPC) phenomenon. Numerous studies have attempted to improve the detectable light wavelength range and the PPC phenomenon. Here, recent studies on metal oxide phototransistors are reviewed, which have improved the range of light wavelengths and the PPC phenomenon by introducing an absorption layer of oxide or non-oxide hybrid structure. The materials of the absorption layer applied to absorb long-wavelength light are classified into oxides, chalcogenides, organic materials, perovskites, and nanodots. Finally, next-generation convergence studies combined with other research fields are introduced and future research directions are detailed.
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Affiliation(s)
- Hyukjoon Yoo
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - I Sak Lee
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Sujin Jung
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Sung Min Rho
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Byung Ha Kang
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Hyun Jae Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
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Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin Film. NANOMATERIALS 2021; 11:nano11092204. [PMID: 34578520 PMCID: PMC8466751 DOI: 10.3390/nano11092204] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/09/2021] [Revised: 08/22/2021] [Accepted: 08/25/2021] [Indexed: 01/10/2023]
Abstract
In this study, the influence of oxygen concentration in InWZnO (IWZO), which was used as the switching layer of conductive bridge random access memory, (CBRAM) is investigated. With different oxygen flow during the sputtering process, the IWZO film can be fabricated with different oxygen concentrations and different oxygen vacancy distribution. In addition, the electrical characteristics of CBRAM device with different oxygen concentration are compared and further analyzed with an atomic force microscope and X-ray photoelectron spectrum. Furthermore, a stacking structure with different bilayer switching is also systematically discussed. Compared with an interchange stacking layer and other single layer memory, the CBRAM with specific stacking sequence of bilayer oxygen-poor/-rich IWZO (IWZOx/IWZOy, x < y) exhibits more stable distribution of a resistance state and also better endurance (more than 3 × 104 cycles). Meanwhile, the memory window of IWZOx/IWZOy can even be maintained over 104 s at 85 °C. Those improvements can be attributed to the oxygen vacancy distribution in switching layers, which may create a suitable environment for the conductive filament formation or rupture. Therefore, it is believed that the specific stacking bilayer IWZO CBRAM might further pave the way for emerging memory applications.
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Chang KC, Liu K, Hu L, Li L, Lin X, Zhang S, Zhang R, Liu HJ, Kuo TP. Supercritical Ammoniation-Enabled Interfacial Polarization for Function-Mode Transformation and Overall Optimization of Thin-Film Transistors. ACS APPLIED MATERIALS & INTERFACES 2021; 13:40053-40061. [PMID: 34392676 DOI: 10.1021/acsami.1c09673] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Thin-film transistors (TFTs) have drawn widespread applications in the increasingly sophisticated display field. Despite the mature process of fabricating enhancement-mode TFTs, lack of facile methods to realize depletion-mode TFTs restrains the implementation of complementary-type circuits, which in turn leads to relatively high power. Here, the supercritical fluid technique is introduced to elaborately design and tune the interface, providing the opportunity for function-mode transformation of TFTs. By harnessing supercritical-assisted ammoniation (SCA) treatment, interfacial polarization induces negative shift of threshold voltage (from 0.2 to -9.8 V), which allows TFTs to remain normally on-state in the absence of complex capacitor-integrated circuits. This convenient technique, without an additional manufacturing process to achieve function-mode transformation, can thus enable the fabrication of comprehensive-mode TFTs under the same process. Furthermore, comprehensive optimizations in the mobility (increases from 2.08 to 17.12 cm2 V-1 s-1), leakage current (reduces from 1.33 × 10-11 to 2.22 × 10-12 A), hysteresis (reduces from 11.2 to 0.2 V), and on/off current ratio (increases from 9.65 × 104 to 7.98 × 106) are achieved simultaneously. Based on conjoint analysis of electrical and material characterization, a reaction model is established for a clearer understanding of the interfacial polarization process. Overall, this low-temperature SCA treatment offers an environmentally benign strategy to modulate the function mode of electronic devices via interfacial engineering and optimize device performance at the same time, exhibiting promise in promoting the implementation of complementary, low-power circuit.
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Affiliation(s)
- Kuan-Chang Chang
- School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, China
| | - Kai Liu
- School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, China
| | - Luodan Hu
- School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, China
| | - Lei Li
- School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, China
| | - Xinnan Lin
- School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, China
| | - Shengdong Zhang
- School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, China
| | - Rui Zhang
- School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, China
| | - Heng-Jui Liu
- Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan
| | - Tzu-Peng Kuo
- Department of Physics, National Sun Yat-sen University, Kaohsiung 804, Taiwan
- Institute of Materials and Optoelectronics, National Sun Yat-sen University, Kaohsiung 804, Taiwan
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Gan KJ, Liu PT, Ruan DB, Hsu CC, Chiu YC, Sze SM. Effect of tungsten doping on the variability of InZnO conductive-bridging random access memory. NANOTECHNOLOGY 2021; 32:035203. [PMID: 33022668 DOI: 10.1088/1361-6528/abbeab] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The characteristics of conductive-bridging random access memory (CBRAM) with amorphous indium-tungsten-zinc-oxide (a-InWZnO) switching layer and copper (Cu) ion-supply layer were prepared by sputtering. It was found that the doping ratio of tungsten has a significant effect on the memory characteristics of the CBRAM, and the doping of tungsten acts as a suppressor of oxygen vacancies in the InWZnO film. The O 1s binding energy associated with the oxygen-deficient regions in the α-InWZnO thin film decreases with increasing tungsten doping ratio, which can be demonstrated by x-ray photoelectron spectroscopy. When the tungsten doping ratio is 15%, the a-InWZnO CBRAM can achieve the excellent memory characteristics, such as high switching endurance (up to 9.7 × 103 cycling endurance), low operating voltage, and good retention capability. Moreover, the electrical uniformity and switching behavior of InWZnO device are evidently improved as the doping ratio of tungsten in the switching layer increases. These results suggest that CBRAM based on novel material InWZnO have great potential to be used in high-performance memory devices.
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Affiliation(s)
- Kai-Jhih Gan
- Department of Electronics Engineering, National Chiao Tung University, Hsinchu, 30010, Taiwan, R.O.C
| | - Po-Tsun Liu
- Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, 30010, Taiwan, R.O.C
| | - Dun-Bao Ruan
- Department of Electronics Engineering, National Chiao Tung University, Hsinchu, 30010, Taiwan, R.O.C
| | - Chih-Chieh Hsu
- Department of Electronics Engineering, National Chiao Tung University, Hsinchu, 30010, Taiwan, R.O.C
| | - Yu-Chuan Chiu
- Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, 30010, Taiwan, R.O.C
| | - Simon M Sze
- Department of Electronics Engineering, National Chiao Tung University, Hsinchu, 30010, Taiwan, R.O.C
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