Enhanced Valley Splitting of Transition-Metal Dichalcogenide by Vacancies in Robust Ferromagnetic Insulating Chromium Trihalides

A Route to Two-Dimensional Room-Temperature Organometallic Multiferroics: The Marriage of d-p Spin Coupling and Structural Inversion Symmetry Breaking

Two-dimensional (2D) room-temperature multiferroic materials are highly desirable but still very limited. Herein, we propose a potential strategy to obtain such materials in 2D metal-organic frameworks (MOFs) by utilizing the d-p direct spin coupling in conjunction with center-symmetry-breaking six-membered heterocyclic rings. Based on this strategy, a screening of 128 2D MOFs results in the identification of three multiferroics, that is, Cr(1,2-oxazine)2, Cr(1,2,4-triazine)2, and Cr(1,2,3,4-trazine)2, simultaneously exhibiting room-temperature ferrimagnetism and ferroelectricity/antiferroelectricity. The room-temperature ferrimagnetic order (306-495 K) in these MOFs originates from the strong d-p direct magnetic exchange interaction between Cr cations and ligand anions. Specifically, Cr(1,2-oxazine)2 exhibits ferroelectric behavior with an out-of-plane polarization of 4.24 pC/m, whereas the other two manifest antiferroelectric characteristics. Notably, all three materials present suitable polarization switching barriers (0.18-0.31 eV). Furthermore, these MOFs are all bipolar magnetic semiconductors with moderate band gaps, in which the spin direction of carriers can be manipulated by electrical gating.

Enhanced Direct Exchange Interaction and Hybridization by Single-Atom Linkers for High Curie Temperature and Superior Visible-Light Harvesting in Cr3(CN3)2

Designing two-dimensional (2D) ferromagnetic (FM) semiconductors with elevated Curie temperature, high carrier mobility, and strong light harvesting is challenging but crucial to the development of spintronics with multifunctionalities. Herein, we show first-principles computation evidence of the 2D metal-organic framework Kagome ferromagnet Cr3(CN3)2. Monolayer Cr3(CN3)2 is predicted to be an FM semiconductor with a record-high Curie temperature of 943 K owing to the use of a single-atom linker (N), which results in strong direct d-p exchange interaction and hybridization between dyz/xz and pz of Cr and N, as well as excellent matching characteristics in energy and symmetry. The single-atom linker structural feature also leads to notable band dispersion and a relatively high carrier mobility of 420 cm2 V-1 s-1. Moreover, under the in-plane strain, 2D Cr3(CN3)2 can be tuned to possess a strong visible-light-harvesting functionality. These novel properties render monolayer Cr3(CN3)2 a distinct 2D ferromagnet with high potential for the development of multifunctional spintronics.

Coupled Spin-Valley, Rashba Effect, and Hidden Spin Polarization in WSi2N4 Family

Using first-principles calculations, we report the electronic properties with a special focus on the band splitting in the WSi₂N₄ class of materials. Due to the broken inversion symmetry and strong spin-orbit coupling, we detect coupled spin-valley effects at the corners of the first Brillouin zone (BZ). Additionally, we observe cubically and linearly split bands around the Γ and M points, respectively. The in-plane mirror symmetry (σ_h) and reduced symmetry of the arbitrary k-point, enforce the persistent spin textures (PST) to occur in full BZ. We induce the Rashba splitting by breaking the σ_h through an out-of-plane external electric field (EEF). The inversion asymmetric site point group of the W atom introduces the hidden spin polarization in centrosymmetric layered bulk counterparts. Low energy k.p models demonstrate that the PST along the M-K line is robust to EEF and layer thickness, making them suitable for applications in spintronics and valleytronics.

Two-dimensional magnetic atomic crystals

Two-dimensional (2D) magnetic crystals show many fascinating physical properties and have potential device applications in many fields. In this paper, the preparation, physical properties and device applications of 2D magnetic atomic crystals are reviewed. First, three preparation methods are presented, including chemical vapor deposition (CVD) molecular beam epitaxy (MBE) and single-crystal exfoliation. Second, physical properties of 2D magnetic atomic crystals, including ferromagnetism, antiferromagnetism, magnetic regulation and anomalous Hall effect are presented. Third, the application of 2D magnetic atomic crystals in heterojunctions reluctance and other aspects are briefly introduced. Finally, the future development direction and possible challenges of 2D magnetic atomic crystals are briefly addressed.

Epitaxial growth of large-grain-size ferromagnetic monolayer CrI3 for valley Zeeman splitting enhancement

Two-dimensional (2D) magnetic CrI₃ has received considerable research attention because of its intrinsic features, including insulation, Ising ferromagnetism, and stacking-order-dependent magnetism, as well as potential in spintronic applications. However, the current strategy for the production of ambient-unstable CrI₃ thin layer is limited to mechanical exfoliation, which normally suffers from uncontrollable layer thickness, small size, and low yet unpredictable yield. Here, via a confined vapor epitaxy (CVE) method, we demonstrate the mass production of flower-like CrI₃ monolayers on mica. Interestingly, we discovered the crucial role of K ions on the mica surface in determining the morphology of monolayer CrI₃, reacting with precursors to form a KI_x buffer layer. Meanwhile, the transport agent affects the thickness and size of the as-grown CrI₃. Moreover, the Curie temperature of CrI₃ is greatly affected by the interaction between CrI₃ and the substrate. The monolayer CrI₃ on mica could act as a magnetic substrate for valley Zeeman splitting enhancement of WSe₂. We reckon our work represents a major advancement in the mass production of monolayer 2D CrI₃ and anticipate that our growth strategy may be extended to other transition metal halides.

The Magnetic Proximity Effect Induced Large Valley Splitting in 2D InSe/FeI2 Heterostructures

The manipulation of valley splitting has potential applications in valleytronics, which lacks in pristine two-dimensional (2D) InSe. Here, we demonstrate that valley physics in InSe can be activated via the magnetic proximity effect exerted by ferromagnetic FeI₂ substrate with spin-orbit coupling. The valley splitting energy can reach 48 meV, corresponding to a magnetic exchange field of ~800 T. The system also presents magnetic anisotropy behavior with its easy magnetization axis tunable from in-plane to out-of-plane by the stacking configurations and biaxial tensile strain. The d-orbital-resolved magnetic anisotropic energy contributions indicate that the tensile strain effect arises from the increase of hybridization between minority Fe d_xy and dx2−y2 states. Our results reveal that the magnetic proximity effect is an effective approach to stimulate the valley properties in InSe to extend its spintronic applications, which is expected to be feasible in other group-III monochalcogenides.

Prediction of room-temperature ferromagnetism in a two-dimensional direct band gap semiconductor

Two-dimensional (2D) ferromagnetic (FM) semiconductors with a direct electronic band gap have recently drawn much attention due to their promising potential for spintronic and magneto-optical applications. However, the Curie temperature (T_C) of recently synthesized 2D FM semiconductors is too low (∼45 K) and a room-temperature 2D direct band gap FM semiconductor has never been reported, which hinders the development for practical magneto-optical applications. Here, we show that through isovalent alloying, one can increase the T_C of a 2D FM semiconductor up to room temperature and simultaneously turn it from an indirect to a direct band gap semiconductor. Using the first-principles calculations, we predict that the alloyed CrMoS₂Br₂ monolayer is a direct band gap semiconductor with a T_C of ∼360 K, whereas the pristine CrSBr monolayer is an indirect band gap semiconductor with a T_C of ∼180 K. These findings provide a promising pathway to realize 2D direct band gap FM semiconductors with T_C above room temperature, which will greatly stimulate theoretical and experimental interest in future spintronic and magneto-optical applications.

Thermoelectric properties of two-dimensional magnet CrI3

The thermoelectric, phonon transport, and electronic transport properties of two-dimensional magnet CrI₃ are systematically investigated by combining density functional theory with Boltzmann transport theory. A low lattice thermal conductivity of 1.355 W m^-1K^-1 is presented at 300 K due to the low Debye temperature and phonon group velocity. The acoustic modes dominate the lattice thermal conductivity, and the longitudinal acoustic mode has the largest contribution of 42.31% on account of its relatively large phonon group velocity and phonon lifetime. The high band degeneracy and the peaky density of states near the conduction band minimum appear for the CrI₃ monolayer, which is beneficial for forming a significantly increased Seebeck coefficient (1561 μV K^-1). Furthermore, the thermoelectric figure of merit is calculated reasonably, and the value is 1.57 for the optimal n-type doping level at 900 K. N-type doping maintains a higher thermoelectric conversion efficiency than p-type doping throughout the temperature range, while the difference gradually increases as the temperature rises. Our investigation may provide some theoretical support for the application of the CrI₃ monolayer in the thermoelectric field.

Spin-dependent Schottky barriers and vacancy-induced spin-selective ohmic contacts in magnetic vdW heterostructures

The Schottky barriers are spin-dependent in magnetic vdW heterostructures.