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Al-Qaisi S, Iram N, Samah S, Alqorashi AK, Aljameel AI, Alrebdi TA, Abbas Z, Bouzgarrou S, Rahman MF, Verma AS. Opto-electronic and thermophysical characteristics of A 2TlAgF 6 (A = Rb, Cs) for green technology applications. J Comput Chem 2024; 45:1576-1586. [PMID: 38516839 DOI: 10.1002/jcc.27347] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/01/2023] [Revised: 02/06/2024] [Accepted: 02/20/2024] [Indexed: 03/23/2024]
Abstract
Lead-free double perovskites are unique materials for transport and optoelectronic applications that use clean resources to generate energy. Using first-principle computations, this study thoroughly investigates the structural, thermoelectric, and optical attributes of A2TlAgF6 (A = Rb, Cs). Tolerance factor and formation energy estimates are used to verify that these materials exist in the cubic phase. Elastic constants with high melting temperature values are ductile when evaluated for mechanical stability using the Born stability criterion. The optical absorption band is adjusted from 2 to 4 eV via band gaps of 1.88 and 1.99 eV, as indicated by band structures. Analysis of optical properties reveals perfect absorption in the visible spectrum, whole polarization, and low optical loss. Furthermore, thermoelectric properties are assessed at 300, 500, and 700 K in the range of -0.5 to 3 eV for chemical potential (μ). The materials exhibit significant improvements in the Figure of Merit scale due to their elevated electrical conductivity, Seebeck coefficient, and extremely low thermal conductivity values.
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Affiliation(s)
- Samah Al-Qaisi
- Palestinian Ministry of Education and Higher Education, Nablus, Palestine
| | - Nazia Iram
- Institute of Physics, Bahauddin Zakariya University, Multan, Pakistan
| | - Saidi Samah
- Department of Physics, College of Science and Humanities in Al-Kharj, Prince Sattam Bin Abdulaziz University, Al-Kharj, Saudi Arabia
- Physics Department, Faculty of Sciences of Monastir, Laboratory of Interfaces and Advanced Materials, Monastir, Tunisia
| | | | - A I Aljameel
- Department of Physics, College of Science, Imam Mohammad Ibn Saud Islamic University (IMSIU), Riyadh, Saudi Arabia
| | - Tahani A Alrebdi
- Department of Physics, College of Science, Princess Nourah Bint Abdulrahman University, Riyadh, Saudi Arabia
| | - Zeesham Abbas
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, Republic of Korea
| | - S Bouzgarrou
- Department of Physics, College of Science, Qassim University, Buraidah, Saudi Arabia
- Laboratoire de Microélectronique et Instrumentation (UR 03/13-04), Faculté des Sciences de Monastir, Monastir, Tunisia
| | - Md Ferdous Rahman
- Advanced Energy Materials and Solar Cell Research Laboratory, Department of Electrical and Electronic Engineering, Begum Rokeya University, Rangpur, Bangladesh
| | - Ajay Singh Verma
- Division of Research & Innovation, School of Applied and Life Sciences, Uttaranchal University, Dehradun, India
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2
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Almalawi D, Lopatin S, Edwards PR, Xin B, Subedi RC, Najmi MA, Alreshidi F, Genovese A, Iida D, Wehbe N, Ooi BS, Ohkawa K, Martin RW, Roqan IS. Simultaneous Growth Strategy of High-Optical-Efficiency GaN NWs on a Wide Range of Substrates by Pulsed Laser Deposition. ACS OMEGA 2023; 8:46804-46815. [PMID: 38107938 PMCID: PMC10720009 DOI: 10.1021/acsomega.3c06302] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/24/2023] [Revised: 11/02/2023] [Accepted: 11/06/2023] [Indexed: 12/19/2023]
Abstract
Here, we explore a catalyst-free single-step growth strategy that results in high-quality self-assembled single-crystal vertical GaN nanowires (NWs) grown on a wide range of common and novel substrates (including GaN, Ga2O3, and monolayer two-dimensional (2D) transition-metal dichalcogenide (TMD)) within the same chamber and thus under identical conditions by pulsed laser deposition. High-resolution transmission electron microscopy and scanning transmission electron microscopy (HR-STEM) and grazing incidence X-ray diffraction measurements confirm the single-crystalline nature of the obtained NWs, whereas advanced optical and cathodoluminescence measurements provide evidence of their high optical quality. Further analyses reveal that the growth is initiated by an in situ polycrystalline layer formed between the NWs and substrates during growth, while as its thickness increases, the growth mode transforms into single-crystalline NW nucleation. HR-STEM and corresponding energy-dispersive X-ray compositional analyses indicate possible growth mechanisms. All samples exhibit strong band edge UV emission (with a negligible defect band) dominated by radiative recombination with a high optical efficiency (∼65%). As all NWs have similar structural and optical qualities irrespective of the substrate used, this strategy will open new horizons for developing III-nitride-based devices.
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Affiliation(s)
- Dhaifallah Almalawi
- Physical
Science and Engineering Division, King Abdullah
University of Science and Technology (KAUST), Thuwal 23955, Saudi Arabia
- Department
of Physics, College of Science, Taif University, Taif 21944, Saudi Arabia
| | - Sergei Lopatin
- Imaging
and Characterization Core Laboratory, King
Abdullah University of Science and Technology (KAUST), Thuwal 23955, Saudi Arabia
| | - Paul R. Edwards
- Department
of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom
| | - Bin Xin
- Physical
Science and Engineering Division, King Abdullah
University of Science and Technology (KAUST), Thuwal 23955, Saudi Arabia
| | - Ram C. Subedi
- Photonics
Laboratory, Division of Computer, Electrical and Mathematical Sciences
and Engineering, King Abdullah University
of Science and Technology (KAUST), Thuwal 23955, Saudi Arabia
| | - Mohammed A. Najmi
- Division
of Computer, Electrical and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology
(KAUST), Thuwal 23955, Saudi Arabia
| | - Fatimah Alreshidi
- Physical
Science and Engineering Division, King Abdullah
University of Science and Technology (KAUST), Thuwal 23955, Saudi Arabia
| | - Alessandro Genovese
- Imaging
and Characterization Core Laboratory, King
Abdullah University of Science and Technology (KAUST), Thuwal 23955, Saudi Arabia
| | - Daisuke Iida
- Division
of Computer, Electrical and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology
(KAUST), Thuwal 23955, Saudi Arabia
| | - Nimer Wehbe
- Imaging
and Characterization Core Laboratory, King
Abdullah University of Science and Technology (KAUST), Thuwal 23955, Saudi Arabia
| | - Boon S. Ooi
- Photonics
Laboratory, Division of Computer, Electrical and Mathematical Sciences
and Engineering, King Abdullah University
of Science and Technology (KAUST), Thuwal 23955, Saudi Arabia
| | - Kazuhiro Ohkawa
- Division
of Computer, Electrical and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology
(KAUST), Thuwal 23955, Saudi Arabia
| | - Robert W. Martin
- Department
of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom
| | - Iman S. Roqan
- Physical
Science and Engineering Division, King Abdullah
University of Science and Technology (KAUST), Thuwal 23955, Saudi Arabia
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Liu M, Jiang M, Zhao Q, Tang K, Sha S, Li B, Kan C, Shi DN. Ultraviolet Exciton-Polariton Light-Emitting Diode in a ZnO Microwire Homojunction. ACS APPLIED MATERIALS & INTERFACES 2023; 15:13258-13269. [PMID: 36866718 DOI: 10.1021/acsami.2c19806] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Low-dimensional ZnO, possessing well-defined side facets and optical gain properties, has emerged as a promising material to develop ultraviolet coherent light sources. However, the realization of electrically driven ZnO homojunction luminescence and laser devices is still a challenge due to the absence of a reliable p-type ZnO. Herein, the sample of p-type ZnO microwires doped by Sb (ZnO:Sb MWs) was synthesized individually. Subsequently, the p-type conductivity was examined using a single-MW field-effect transistor. Upon optical pumping, a ZnO:Sb MW showing a regular hexagonal cross-section and smooth sidewall facets can feature as an optical microcavity, which is evidenced by the achievement of whispering-gallery-mode lasing. By combining an n-type ZnO layer, a single ZnO:Sb MW homojunction light-emitting diode (LED), which exhibited a typical ultraviolet emission at a wavelength of 379.0 nm and a line-width of approximately 23.5 nm, was constructed. We further illustrated that strong exciton-photon coupling can occur in the as-constructed p-ZnO:Sb MW/n-ZnO homojunction LED by researching spatially resolved electroluminescence spectra, contributing to the exciton-polariton effect. Particularly, varying the cross-sectional dimensions of ZnO:Sb wires can further modulate the exciton-photon coupling strengths. We anticipate that the results can provide an effective exemplification to realize reliable p-type ZnO and tremendously promote the development of low-dimensional ZnO homojunction optoelectronic devices.
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Affiliation(s)
- Maosheng Liu
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, China
| | - Mingming Jiang
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, China
| | - Qinzhi Zhao
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, China
| | - Kai Tang
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, China
| | - Shulin Sha
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, China
| | - Binghui Li
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
| | - Caixia Kan
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, China
| | - Da Ning Shi
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, China
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Alwadai N, Alharbi Z, Alreshidi F, Mitra S, Xin B, Alamoudi H, Upadhyaya K, Hedhili MN, Roqan IS. Enhanced Photoresponsivity UV-C Photodetectors Using a p-n Junction Based on Ultra-Wide-Band Gap Sn-Doped β-Ga 2O 3 Microflake/MnO Quantum Dots. ACS APPLIED MATERIALS & INTERFACES 2023; 15:12127-12136. [PMID: 36808944 DOI: 10.1021/acsami.2c18900] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Solar-blind self-powered UV-C photodetectors suffer from low performance, while heterostructure-based devices require complex fabrication and lack p-type wide band gap semiconductors (WBGSs) operating in the UV-C region (<290 nm). In this work, we mitigate the aforementioned issues by demonstrating a facile fabrication process for a high-responsivity solar-blind self-powered UV-C photodetector based on a p-n WBGS heterojunction structure, operating under ambient conditions. Here, heterojunction structures based on p-type and n-type ultra-wide band gap WBGSs (i.e. both are characterized by energy gap ≥4.5 eV) are demonstrated for the first time; mainly p-type solution-processed manganese oxide quantum dots (MnO QDs) and n-type Sn-doped β-Ga2O3 microflakes. Highly crystalline p-type MnO QDs are synthesized using cost-effective and facile pulsed femtosecond laser ablation in ethanol (FLAL), while the n-type Ga2O3 microflakes are prepared by exfoliation. The solution-processed QDs are uniformly dropcasted on the exfoliated Sn-doped β-Ga2O3 microflakes to fabricate a p-n heterojunction photodetector, resulting in excellent solar-blind UV-C photoresponse characteristics (with a cutoff at ∼265 nm) being demonstrated. Further analyses using XPS demonstrate the good band alignment between p-type MnO QDs and n-type β-Ga2O3 microflakes with a type-II heterojunction. Superior photoresponsivity (922 A/W) is obtained under bias, while the self-powered responsivity is ∼86.9 mA/W. The fabrication strategy adopted in this study will provide a cost-effective means for the development of flexible and highly efficient UV-C devices suitable for energy-saving large-scale fixable applications.
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Affiliation(s)
- Norah Alwadai
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal23955-6900, Saudi Arabia
- Department of Physics, College of Sciences, Princess Nourah Bint Abdulrahman University (PNU), Riyadh11671, Saudi Arabia
| | - Zohoor Alharbi
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal23955-6900, Saudi Arabia
| | - Fatimah Alreshidi
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal23955-6900, Saudi Arabia
| | - Somak Mitra
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal23955-6900, Saudi Arabia
| | - Bin Xin
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal23955-6900, Saudi Arabia
| | - Hadeel Alamoudi
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal23955-6900, Saudi Arabia
| | - Kishor Upadhyaya
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal23955-6900, Saudi Arabia
| | - Mohamed N Hedhili
- Nanofabrication Core Lab, King Abdullah University of Science and Technology (KAUST), Thuwal23955-6900, Saudi Arabia
| | - Iman S Roqan
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal23955-6900, Saudi Arabia
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Abstract
The investigation of photodetectors with broadband response and high responsivity is essential. Zinc Oxide (ZnO) nanowire has the potential of application in photodetectors, owing to the great optoelectrical property and good stability in the atmosphere. However, due to a large number of nonradiative centers at interface and the capture of surface state electrons, the photocurrent of ZnO based photodetectors is still low. In this work, 2D Bi2Se3/ZnO NWAs heterojunction with type-I band alignment is established. This heterojunction device shows not only an enhanced photoresponsivity of 0.15 A/W at 377 nm three times of the bare ZnO nanowire (0.046 A/W), but also a broadband photoresponse from UV to near infrared region has been achieved. These results indicate that the Bi2Se3/ZnO NWAs type-I heterojunction is an ideal photodetector in broadband detection.
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Zhang Z, Liu F, Lin Y. ZnO@PNIPAM nanospheres synthesis from inverse Pickering miniemulsion polymerization. Colloids Surf A Physicochem Eng Asp 2020. [DOI: 10.1016/j.colsurfa.2020.125264] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/29/2023]
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