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Kumar P, Singh G, Guan X, Roy S, Lee J, Kim IY, Li X, Bu F, Bahadur R, Iyengar SA, Yi J, Zhao D, Ajayan PM, Vinu A. The Rise of Xene Hybrids. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2403881. [PMID: 38899836 DOI: 10.1002/adma.202403881] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/15/2024] [Revised: 05/22/2024] [Indexed: 06/21/2024]
Abstract
Xenes, mono-elemental atomic sheets, exhibit Dirac/Dirac-like quantum behavior. When interfaced with other 2D materials such as boron nitride, transition metal dichalcogenides, and metal carbides/nitrides/carbonitrides, it enables them with unique physicochemical properties, including structural stability, desirable bandgap, efficient charge carrier injection, flexibility/breaking stress, thermal conductivity, chemical reactivity, catalytic efficiency, molecular adsorption, and wettability. For example, BN acts as an anti-oxidative shield, MoS2 injects electrons upon laser excitation, and MXene provides mechanical flexibility. Beyond precise compositional modulations, stacking sequences, and inter-layer coupling controlled by parameters, achieving scalability and reproducibility in hybridization is crucial for implementing these quantum materials in consumer applications. However, realizing the full potential of these hybrid materials faces challenges such as air gaps, uneven interfaces, and the formation of defects and functional groups. Advanced synthesis techniques, a deep understanding of quantum behaviors, precise control over interfacial interactions, and awareness of cross-correlations among these factors are essential. Xene-based hybrids show immense promise for groundbreaking applications in quantum computing, flexible electronics, energy storage, and catalysis. In this timely perspective, recent discoveries of novel Xenes and their hybrids are highlighted, emphasizing correlations among synthetic parameters, structure, properties, and applications. It is anticipated that these insights will revolutionize diverse industries and technologies.
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Affiliation(s)
- Prashant Kumar
- Global Innovative Centre for Advanced Nanomaterials (GICAN), College of Engineering, Science and Environment (CESE), University of Newcastle, University Drive, Callaghan, New South Wales, 2308, Australia
| | - Gurwinder Singh
- Global Innovative Centre for Advanced Nanomaterials (GICAN), College of Engineering, Science and Environment (CESE), University of Newcastle, University Drive, Callaghan, New South Wales, 2308, Australia
| | - Xinwei Guan
- Global Innovative Centre for Advanced Nanomaterials (GICAN), College of Engineering, Science and Environment (CESE), University of Newcastle, University Drive, Callaghan, New South Wales, 2308, Australia
| | - Soumyabrata Roy
- Department of Materials Science and Nano Engineering, Rice University, 6100 Main St, Houston, TX, 77005, USA
- Department of Sustainable Energy Engineering, Indian Institute of Technology Kanpur, Kanpur, Uttar Pradesh, 208016, India
| | - Jangmee Lee
- Global Innovative Centre for Advanced Nanomaterials (GICAN), College of Engineering, Science and Environment (CESE), University of Newcastle, University Drive, Callaghan, New South Wales, 2308, Australia
| | - In Young Kim
- Global Innovative Centre for Advanced Nanomaterials (GICAN), College of Engineering, Science and Environment (CESE), University of Newcastle, University Drive, Callaghan, New South Wales, 2308, Australia
| | - Xiaomin Li
- Department of Chemistry, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Laboratory of Advanced Materials, State Key Laboratory of Molecular Engineering of Polymers, iChEM (Collaborative Innovation Center of Chemistry for Energy Materials), Fudan University, Shanghai, 200433, P. R. China
| | - Fanxing Bu
- Department of Chemistry, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Laboratory of Advanced Materials, State Key Laboratory of Molecular Engineering of Polymers, iChEM (Collaborative Innovation Center of Chemistry for Energy Materials), Fudan University, Shanghai, 200433, P. R. China
| | - Rohan Bahadur
- Global Innovative Centre for Advanced Nanomaterials (GICAN), College of Engineering, Science and Environment (CESE), University of Newcastle, University Drive, Callaghan, New South Wales, 2308, Australia
| | - Sathvik Ajay Iyengar
- Department of Materials Science and Nano Engineering, Rice University, 6100 Main St, Houston, TX, 77005, USA
| | - Jiabao Yi
- Global Innovative Centre for Advanced Nanomaterials (GICAN), College of Engineering, Science and Environment (CESE), University of Newcastle, University Drive, Callaghan, New South Wales, 2308, Australia
| | - Dongyuan Zhao
- Department of Chemistry, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Laboratory of Advanced Materials, State Key Laboratory of Molecular Engineering of Polymers, iChEM (Collaborative Innovation Center of Chemistry for Energy Materials), Fudan University, Shanghai, 200433, P. R. China
| | - Pulickel M Ajayan
- Department of Materials Science and Nano Engineering, Rice University, 6100 Main St, Houston, TX, 77005, USA
| | - Ajayan Vinu
- Global Innovative Centre for Advanced Nanomaterials (GICAN), College of Engineering, Science and Environment (CESE), University of Newcastle, University Drive, Callaghan, New South Wales, 2308, Australia
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Akeredolu B, Ahemen I, Amah A, Onojah A, Shakya J, Gayathri H, Ghosh A. Improved liquid phase exfoliation technique for the fabrication of MoS 2/graphene heterostructure-based photodetector. Heliyon 2024; 10:e24964. [PMID: 38322969 PMCID: PMC10845704 DOI: 10.1016/j.heliyon.2024.e24964] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/17/2023] [Revised: 01/11/2024] [Accepted: 01/17/2024] [Indexed: 02/08/2024] Open
Abstract
2D nanosheets produced using liquid phase exfoliation method offers scalable and cost effective routes to optoelectronics devices. But this technique sometimes yields high defect, low stability, and compromised electronic properties. In this work, we employed an innovative approach that improved the existing liquid phase exfoliation method for fabricating MoS2/graphene heterostructure-based photodetector with enhanced optoelectronic properties. This technique involves hydrothermally treating MoS2 before dispersing it in a carefully chosen and environmentally friendly IPA/water solvent for ultrasonication exfoliation through an optomechanical approach. Thereafter, heterostructure nanosheets of MoS2 and graphene were formed through sequential deposition technique for the fabrication of vertical heterojunctions. Furthermore, we achieved a vertically stacked MoS2/graphene photodetector and a bare MoS2 photodetector. The MoS2/graphene hybrid nanosheets were characterized using spectroscopic and microscopic techniques. The results obtained show the size of the nanosheets is between 350 and 500 nm on average, and their thickness is less than or equal to 5 nm, and high crystallinity in the 2H semiconducting phase. The photocurrent, photoresponsivity, external quantum efficiency (EQE), and specific detectivity of MoS2/graphene heterostructure at 4 V bias voltage and 650 nm illumination wavelength were 3.55 μA, 39.44 mA/W, 7.54 %, and 2.02 × 1010 Jones, respectively, and that of MoS2 photodetector are 0.55 μA, 6.11 mA/W, 1.16 %, and 3.4 × 109 Jones. The results presented indicate that the photoresponse performances of the as-prepared MoS2/graphene were greatly improved (about 7-fold) compared to the photoresponse of the sole MoS2. Again, the MoS2/graphene heterostructure fabricated in this work show better optoelectronic characteristics as compared to the similar heterostructure prepared using the conventional solution processed method. The results provide a modest, inexpensive, and efficient method to fabricate heterojunctions with improved optoelectronic performance.
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Affiliation(s)
- B.J. Akeredolu
- Department of Physics Joseph Sarwuan Tarka University, Makurdi, P.M.B. 2373, Nigeria
- Department of Pure and Applied Physics Federal University, Wukari, P.M.B 1020, Nigeria
- Department of Physics, Indian Institute of Science, Bangalore, 560012, India
| | - I. Ahemen
- Department of Physics Joseph Sarwuan Tarka University, Makurdi, P.M.B. 2373, Nigeria
| | - A.N. Amah
- Department of Physics Joseph Sarwuan Tarka University, Makurdi, P.M.B. 2373, Nigeria
| | - A.D. Onojah
- Department of Physics Joseph Sarwuan Tarka University, Makurdi, P.M.B. 2373, Nigeria
| | - Jyoti Shakya
- Department of Physics, Indian Institute of Science, Bangalore, 560012, India
| | - H.N. Gayathri
- Department of Physics, Indian Institute of Science, Bangalore, 560012, India
| | - Arindam Ghosh
- Department of Physics, Indian Institute of Science, Bangalore, 560012, India
- Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore, 560012, India
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Katiyar AK, Hoang AT, Xu D, Hong J, Kim BJ, Ji S, Ahn JH. 2D Materials in Flexible Electronics: Recent Advances and Future Prospectives. Chem Rev 2024; 124:318-419. [PMID: 38055207 DOI: 10.1021/acs.chemrev.3c00302] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.
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Affiliation(s)
- Ajit Kumar Katiyar
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Anh Tuan Hoang
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Duo Xu
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Juyeong Hong
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Beom Jin Kim
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Seunghyeon Ji
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
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Li M, Ma X, Mu Y, Xie G, Wan H, Tao M, Guo B, Gong JR. A facile covalent strategy for ultrafast negative photoconductance hybrid graphene/porphyrin-based photodetector. NANOTECHNOLOGY 2022; 34:085201. [PMID: 36541533 DOI: 10.1088/1361-6528/aca598] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/16/2022] [Accepted: 11/24/2022] [Indexed: 06/17/2023]
Abstract
As a powerful complement to positive photoconductance (PPC), negative photoconductance (NPC) holds great potential for photodetector. However, the slow response of NPC relative to PPC devices limits their integration. Here, we propose a facile covalent strategy for an ultrafast NPC hybrid 2D photodetector. Our transistor-based graphene/porphyrin model device with a rise time of 0.2 ms and decay time of 0.3 ms has the fastest response time in the so far reported NPC hybrid photodetectors, which is attributed to efficient photogenerated charge transport and transfer. Both the photosensitive porphyrin with an electron-rich and large rigid structure and the built-in graphene frame with high carrier mobility are prone to the photogenerated charge transport. Especially, the intramolecular donor-acceptor system formed by graphene and porphyrin through covalent bonding promotes photoinduced charge transfer. This covalent strategy can be applied to other nanosystems for high-performance NPC hybrid photodetector.
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Affiliation(s)
- Mengshan Li
- Department of Chemistry, School of Science Tianjin University, Weijin Road, Tianjin 300072, People's Republic of China
- Chinese Academy of Sciences (CAS) Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchy Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Xiaoqing Ma
- Department of Chemistry, School of Science Tianjin University, Weijin Road, Tianjin 300072, People's Republic of China
- Chinese Academy of Sciences (CAS) Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchy Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Yanqi Mu
- Chinese Academy of Sciences (CAS) Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchy Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of CAS, Beijing 100190, People's Republic of China
| | - Guancai Xie
- Chinese Academy of Sciences (CAS) Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchy Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of CAS, Beijing 100190, People's Republic of China
| | - Hongfeng Wan
- Chinese Academy of Sciences (CAS) Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchy Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of CAS, Beijing 100190, People's Republic of China
| | - Minli Tao
- Department of Chemistry, School of Science Tianjin University, Weijin Road, Tianjin 300072, People's Republic of China
| | - Beidou Guo
- Chinese Academy of Sciences (CAS) Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchy Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of CAS, Beijing 100190, People's Republic of China
| | - Jian Ru Gong
- Chinese Academy of Sciences (CAS) Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchy Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of CAS, Beijing 100190, People's Republic of China
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5
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Das S, Gupta G, Chatterjee S, Watanabe K, Taniguchi T, Majumdar K. Highly Nonlinear Biexcitonic Photocurrent from Ultrafast Interlayer Charge Transfer. ACS NANO 2022; 16:9728-9735. [PMID: 35604012 DOI: 10.1021/acsnano.2c03397] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Strong Coulomb interactions in monolayer semiconductors allow them to host optically active large many-body states, such as the five-particle state, charged biexciton. Strong nonlinear light absorption by the charged biexciton under spectral resonance, coupled with its charged nature, makes it intriguing for nonlinear photodetection─an area that is hitherto unexplored. Using the high built-in vertical electric field in an asymmetrically designed few-layer graphene encapsulated 1L-WS2 heterostructure, here we report a large, highly nonlinear photocurrent arising from the strong absorption by two charged biexciton species under zero external bias (self-powered mode). Time-resolved measurement reveals that the generated charged biexcitons transfer to the few-layer graphene in a time scale of sub-5 ps, indicating an ultrafast intrinsic limit of the photoresponse. By using single- and two-color photoluminescence excitation spectroscopy, we show that the two biexcitonic peaks originate from bright-dark and bright-bright exciton-trion combinations. Such innate nonlinearity in the photocurrent due to its biexcitonic origin, coupled with the ultrafast response due to swift interlayer charge transfer, exemplifies the promise of manipulating many-body effects in monolayers toward viable optoelectronic applications.
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Affiliation(s)
- Sarthak Das
- Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India
| | - Garima Gupta
- Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India
| | - Suman Chatterjee
- Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-044 Japan
| | - Kausik Majumdar
- Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India
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6
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Ghosh S, Varghese A, Jawa H, Yin Y, Medhekar NV, Lodha S. Polarity-Tunable Photocurrent through Band Alignment Engineering in a High-Speed WSe 2/SnSe 2 Diode with Large Negative Responsivity. ACS NANO 2022; 16:4578-4587. [PMID: 35188740 DOI: 10.1021/acsnano.1c11110] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Excellent light-matter interaction and a wide range of thickness-tunable bandgaps in layered vdW materials coupled by the facile fabrication of heterostructures have enabled several avenues for optoelectronic applications. Realization of high photoresponsivity at fast switching speeds is a critical challenge for 2D optoelectronics to enable high-performance photodetection for optical communication. Moving away from conventional type-II heterostructure pn junctions towards a WSe2/SnSe2 type-III configuration, we leverage the steep change in tunneling current along with a light-induced heterointerface band shift to achieve high negative photoresponsivity, while the fast carrier transport under tunneling results in high speed. In addition, the photocurrent can be controllably switched from positive to negative values, with ∼104× enhancement in responsivity, by engineering the band alignment from type-II to type-III using either the drain or the gate bias. This is further reinforced by electric-field dependent interlayer band structure calculations using density functional theory. The high negative responsivity of 2 × 104 A/W and fast response time of ∼1 μs coupled with a polarity-tunable photocurrent can lead to the development of next-generation multifunctional optoelectronic devices.
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Affiliation(s)
- Sayantan Ghosh
- Department of Electrical Engineering, IIT Bombay, Mumbai 400076, India
| | - Abin Varghese
- Department of Electrical Engineering, IIT Bombay, Mumbai 400076, India
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
- IITB-Monash Research Academy, IIT Bombay, Mumbai 400076, India
| | - Himani Jawa
- Department of Electrical Engineering, IIT Bombay, Mumbai 400076, India
| | - Yuefeng Yin
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
| | - Nikhil V Medhekar
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
| | - Saurabh Lodha
- Department of Electrical Engineering, IIT Bombay, Mumbai 400076, India
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Jiang H, Wei J, Sun F, Nie C, Fu J, Shi H, Sun J, Wei X, Qiu CW. Enhanced Photogating Effect in Graphene Photodetectors via Potential Fluctuation Engineering. ACS NANO 2022; 16:4458-4466. [PMID: 35191301 DOI: 10.1021/acsnano.1c10795] [Citation(s) in RCA: 27] [Impact Index Per Article: 13.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/20/2023]
Abstract
The photogating effect in hybrid structures has manifested itself as a reliable and promising approach for photodetectors with ultrahigh responsivity. A crucial factor of the photogating effect is the built-in potential at the interface, which controls the separation and harvesting of photogenerated carriers. So far, the primary efforts of designing the built-in potential rely on discovering different materials and developing multilayer structures, which may raise problems in the compatibility with the standard semiconductor production line. Here, we report an enhanced photogating effect in a monolayer graphene photodetector based on a structured substrate, where the built-in potential is established by the mechanism of potential fluctuation engineering. We find that the enhancement factor of device responsivity is related to a newly defined parameter, namely, fluctuation period rate (Pf). Compared to the device without a nanostructured substrate, the responsivity of the device with an optimized Pf is enhanced by 100 times, reaching a responsivity of 240 A/W and a specific detectivity, D*, of 3.4 × 1012 Jones at 1550 nm wavelength and room temperature. Our experimental results are supported by both theoretical analysis and numerical simulation. Since our demonstration of the graphene photodetectors leverages the engineering of structures with monolayer graphene rather than materials with a multilayer complex structure. it should be universal and applicable to other hybrid photodetectors.
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Affiliation(s)
- Hao Jiang
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
| | - Jingxuan Wei
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
| | - Feiying Sun
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China
| | - Changbin Nie
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China
| | - Jintao Fu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
| | - Haofei Shi
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China
| | - Jiuxun Sun
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Xingzhan Wei
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China
| | - Cheng-Wei Qiu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
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Nalwa HS. A review of molybdenum disulfide (MoS 2) based photodetectors: from ultra-broadband, self-powered to flexible devices. RSC Adv 2020; 10:30529-30602. [PMID: 35516069 PMCID: PMC9056353 DOI: 10.1039/d0ra03183f] [Citation(s) in RCA: 47] [Impact Index Per Article: 11.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/09/2020] [Accepted: 07/17/2020] [Indexed: 12/23/2022] Open
Abstract
Two-dimensional transition metal dichalcogenides (2D TMDs) have attracted much attention in the field of optoelectronics due to their tunable bandgaps, strong interaction with light and tremendous capability for developing diverse van der Waals heterostructures (vdWHs) with other materials. Molybdenum disulfide (MoS2) atomic layers which exhibit high carrier mobility and optical transparency are very suitable for developing ultra-broadband photodetectors to be used from surveillance and healthcare to optical communication. This review provides a brief introduction to TMD-based photodetectors, exclusively focused on MoS2-based photodetectors. The current research advances show that the photoresponse of atomic layered MoS2 can be significantly improved by boosting its charge carrier mobility and incident light absorption via forming MoS2 based plasmonic nanostructures, halide perovskites-MoS2 heterostructures, 2D-0D MoS2/quantum dots (QDs) and 2D-2D MoS2 hybrid vdWHs, chemical doping, and surface functionalization of MoS2 atomic layers. By utilizing these different integration strategies, MoS2 hybrid heterostructure-based photodetectors exhibited remarkably high photoresponsivity raging from mA W-1 up to 1010 A W-1, detectivity from 107 to 1015 Jones and a photoresponse time from seconds (s) to nanoseconds (10-9 s), varying by several orders of magnitude from deep-ultraviolet (DUV) to the long-wavelength infrared (LWIR) region. The flexible photodetectors developed from MoS2-based hybrid heterostructures with graphene, carbon nanotubes (CNTs), TMDs, and ZnO are also discussed. In addition, strain-induced and self-powered MoS2 based photodetectors have also been summarized. The factors affecting the figure of merit of a very wide range of MoS2-based photodetectors have been analyzed in terms of their photoresponsivity, detectivity, response speed, and quantum efficiency along with their measurement wavelengths and incident laser power densities. Conclusions and the future direction are also outlined on the development of MoS2 and other 2D TMD-based photodetectors.
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Affiliation(s)
- Hari Singh Nalwa
- Advanced Technology Research 26650 The Old Road Valencia California 91381 USA
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