Light Trapping in Conformal Graphene/Silicon Nanoholes for High-Performance Photodetectors

Nitrogen-Doped 3D-Graphene Advances Near-Infrared Photodetector for Logic Circuits and Image Sensors Overcoming 2D Limitations

The limitations of two-dimensional (2D) graphene in broadband photodetector are overcome by integrating nitrogen (N) doping into three-dimensional (3D) structures within silicon (Si) via plasma-assisted chemical vapor deposition (PACVD) technology. This contributes to the construction of vertical Schottky heterojunction broad-spectrum photodetectors and applications in logic devices and image sensors. The natural nanoscale resonant cavity structure of 3D-graphene enhances photon capture efficiency, thereby increasing photocarrier generation. N-doping can fine-tune the electronic structure, advancing the Schottky barrier height and reducing dark current. The as-fabricated photodetector exhibits exceptional self-driven photoresponse, especially at 1550 nm, with an excellent photoresponsivity (79.6 A/W), specific detectivity (1013 Jones), and rapid response of 130 μs. Moreover, it enables logic circuits, high-resolution pattern image recognition, and broadband spectra recording across the visible to near-infrared range (400-1550 nm). This research will provide new views and technical support for the development and widespread application of high-performance semiconductor-based graphene broadband detectors.

Monolayer graphene/GaN heterostructure photodetector with UV-IR dual-wavelength photoresponses

An ultraviolet-infrared (UV-IR) dual-wavelength photodetector (PD) based on a monolayer (ML) graphene/GaN heterostructure has been successfully fabricated in this work. The ML graphene was synthesized by chemical vapor deposition (CVD) and subsequently transferred onto GaN substrate using polymethylmethacrylate (PMMA). The morphological and optical properties of the as-prepared graphene and GaN were presented. The fabricated PD based on the graphene/GaN heterostructure exhibited excellent rectify behavior by measuring the current-voltage (I-V) characteristics under dark conditions, and the spectral response demonstrated that the device revealed an UV-IR dual-wavelength photoresponse. In addition, the energy band structure and absorption properties of the ML graphene/GaN heterostructure were theoretically investigated based on density functional theory (DFT) to explore the underlying physical mechanism of the two-dimensional (2D)/three-dimensional (3D) hybrid heterostructure PD device. This work paves the way for the development of innovative GaN-based dual-wavelength optoelectronic devices, offering a potential strategy for future applications in the field of advanced photodetection technology.

Graphene nanowalls in photodetectors

Graphene nanowalls (GNWs) have emerged as a promising material in the field of photodetection, thanks to their exceptional optical, electrical, mechanical, and thermodynamic properties. However, the lack of a comprehensive review in this domain hinders the understanding of GNWs' development and potential applications. This review aims to provide a systematic summary and analysis of the current research status and challenges in GNW-based photodetectors. We begin by outlining the growth mechanisms and methods of GNWs, followed by a discussion on their physical properties. Next, we categorize and analyze the latest research progress in GNW photodetectors, focusing on photovoltaic, photoconductive, and photothermal detectors. Lastly, we offer a summary and outlook, identifying potential challenges and outlining industry development directions. This review serves as a valuable reference for researchers and industry professionals in understanding and exploring the opportunities of GNW materials in photodetection.

Design and Fabrication of High-Efficiency, Low-Power, and Low-Leakage Si-Avalanche Photodiodes for Low-Light Sensing

Since the advent of impact ionization and its application in avalanche photodiodes (APD), numerous application goals have contributed to steady improvements over several decades. The characteristic high operating voltages and the need for thick absorber layers (π-layers) in the Si-APDs pose complicated design and operational challenges in complementary metal oxide semiconductor integration of APDs. In this work, we have designed a sub-10 V operable Si-APD and epitaxially grown the stack on a semiconductor-on-insulator substrate with a submicron thin π-layer, and we fabricated the devices with integrated photon-trapping microholes (PTMH) to enhance photon absorption. The fabricated APDs show a substantially low prebreakdown leakage current density of ∼50 nA/mm². The devices exhibit a consistent ∼8.0 V breakdown voltage with a multiplication gain of 296.2 under 850 nm illumination wavelength. We report a ∼5× increase in the EQE at 850 nm by introducing the PTMH into the device. The enhancement in the EQE is evenly distributed across the entire wavelength range (640-1100 nm). The EQE of the devices without PTMH (flat devices) undergo a notable oscillation caused by the resonance at specific wavelengths and show a strong dependency on the angle of incidence. This characteristic dependency is significantly circumvented by introducing the PTMH into the APD. The devices exhibit a significantly low off-state power consumption of 0.41 μW/mm² and stand fairly well against the state-of-the-art literature. Such high efficiency, low leakage, low breakdown voltage, and extremely low-power Si-APD can be easily incorporated into the existing CMOS foundry line and enable on-chip, high-speed, and low-photon count detection on a large scale.

Ultrafast and Resist-Free Nanopatterning of 2D Materials by Femtosecond Laser Irradiation

The performance of two-dimensional (2D) materials is promising for electronic, photonic, and sensing devices since they possess large surface-to-volume ratios, high mechanical strength, and broadband light sensitivity. While significant advances have been made in synthesizing and transferring 2D materials onto different substrates, there is still the need for scalable patterning of 2D materials with nanoscale precision. Conventional lithography methods require protective layers such as resist or metals that can contaminate or degrade the 2D materials and deteriorate the final device performance. Current resist-free patterning methods are limited in throughput and typically require custom-made equipment. To address these limitations, we demonstrate the noncontact and resist-free patterning of platinum diselenide (PtSe₂), molybdenum disulfide (MoS₂), and graphene layers with nanoscale precision at high processing speed while preserving the integrity of the surrounding material. We use a commercial, off-the-shelf two-photon 3D printer to directly write patterns in the 2D materials with features down to 100 nm at a maximum writing speed of 50 mm/s. We successfully remove a continuous film of 2D material from a 200 μm × 200 μm substrate area in less than 3 s. Since two-photon 3D printers are becoming increasingly available in research laboratories and industrial facilities, we expect this method to enable fast prototyping of devices based on 2D materials across various research areas.

Lemon-juice derived highly efficient S-GQD/GO composite as a photocatalyst for regeneration of coenzyme under solar light

The innovation of a highly efficient and inexpensive graphene oxide-based photocatalyst is a challenging task for selective solar chemical regeneration/coenzyme such as nicotinamide adenine dinucleotide (NADH). Herein, we have designed lemon-juice derived highly efficient S-GQD/GO composite as a photocatalyst for regeneration of NADH under solar light. The rational design of a highly efficient photocatalytic system through the orientation of S-GQD on graphene oxide as solar light harvesting photocatalyst is explored for the first time for NADH regeneration. This highly solar light active S-GQD/GO composite photocatalyst upon integration with the NAD + is used for highly regioselective regeneration of coenzyme (76.36%). The present work provides the benchmark instances of graphene oxide-based material as a photocatalyst for selective regeneration of NADH under solar light and opens a new door for green synthesis.

Gradual funnel photon trapping enhanced InAs/GaSb type-II superlattice infrared detector

InAs/GaSb type-II superlattice materials have attracted in the field of infrared detection due to their high quality, uniformity and stability. The performance of InAs/GaSb type-II superlattice detector is limited by dark noise and light response. This work reports a gradual funnel photon trapping (GFPT) structure enabling the light trapping in the T2SL detector absorption area. The GFPT detector exhibits an efficient broadband responsivity enhancement of 30% and a darker current noise reduction of 3 times. It has excellent passivated by atomic layer deposition and achieves a high detectivity of 1.51 × 10¹¹ cm Hz^1/2 at 78 K.

Sensitive Silicon Nanowire Ultraviolet B Photodetector Induced by Leakage Mode Resonances

Ultraviolet photodetectors (UVPDs) have played an important role both in civil and military applications. While various studies have shown that traditional UVPDs based on wide-band-gap semiconductors (WBSs) have excellent device performances, it is, however, undeniable that the practical application of WBS-based UVPDs is largely limited by the relatively high fabrication cost. In this work, we propose a new silicon nanowire (Si NW) UVPD that is very sensitive to UVB light illumination. The Si NWs with a diameter of about 36 nm are fabricated by a metal-assisted chemical etching method. Performance analysis revealed that the Si NW device was only sensitive to UVB light and almost blind to illumination in the visible and near-infrared regions. Such abnormal spectral selectivity was associated with the leakage mode resonances (LMRs) of the small diameter, according to our theoretical simulation. Under 300 nm illumination, the responsivity, external quantum efficiency, and specific detectivity were estimated to be 10.2 AW^-1, 4.22 × 10³%, and 2.14 × 10¹⁰ Jones, respectively, which were comparable to or even higher than those of some WBS-based UVPDs. These results illustrate that the small dimension Si NWs are potential building blocks for low-cost and high-performance UVPDs in the future.

Conformal Self-Assembly of Nanospheres for Light-Enhanced Airtightness Monitoring and Room-Temperature Gas Sensing

The fabrication of conformal nanostructures on microarchitectures is of great significance for diverse applications. Here a facile and universal method was developed for conformal self-assembly of nanospheres on various substrates including convex bumps and concave holes. Hydrophobic microarchitectures could be transferred into superhydrophilic ones using plasma treatment due to the formation of numerous hydroxyl groups. Because of superhydrophilicity, the nanosphere suspension spread on the microarchitectures quickly and conformal self-assembly of nanospheres can be realized. Besides, the feature size of the conformal nanospheres on the substrates could be further regulated by plasma treatment. After transferring two-dimensional tungsten disulfide sheets onto the conformal nanospheres, the periodic nanosphere array was demonstrated to be able to enhance the light harvesting of WS2. Based on this, a light-enhanced room-temperature gas sensor with a fast recovery speed (<35 s) and low detecting limit (500 ppb) was achieved. Moreover, the WS2-covered nanospheres on the microarchitectures were very sensitive to the changes in air pressure due to the formation of suspended sheets on the convex bumps and concave holes. A sensitive photoelectronic pressure sensor that was capable of detecting the airtightness of vacuum devices was developed using the WS2-decorated hierarchical architectures. This work provides a simple method for the fabrication of conformal nanospheres on arbitrary substrates, which is promising for three-dimensional microfabrication of multifunctional hierarchical microarchitectures for diverse applications, such as biomimetic compound eyes, smart wetting surfaces and photonic crystals.

Sensitive, Reusable, Surface-Enhanced Raman Scattering Sensors Constructed with a 3D Graphene/Si Hybrid

Surface-enhanced Raman scattering (SERS) substrates based on graphene and its derivatives have recently attracted attention among those interested in the detection of trace molecules; however, these substrates generally show poor uniformity, an unsatisfactory enhancement factor, and require a complex fabrication process. Herein, we design and fabricate three-dimensional (3D) graphene/silicon (3D-Gr/Si) heterojunction SERS substrates to detect various types of molecules. Notably, the detection limit of 3D-Gr/Si can reach 10^-10 M for rhodamine 6G (R6G) and rhodamine B (RB), 10^-7 M for crystal violet (CRV), copper(II) phthalocyanine (CuPc), and methylene blue (MB), 10^-8 M for dopamine (DA), 10^-6 M for bovine serum albumin (BSA), and 10^-5 M for melamine (Mel), which is superior to most reported graphene-based SERS substrates. Besides, the proposed 3D-Gr/Si heterojunction SERS substrates can achieve a high uniformity with relative standard deviations (RSDs) of less than 5%. Moreover, the 3D-Gr/Si SERS substrates are reusable after washing with ethyl alcohol to remove the adsorbed molecules. These excellent SERS performances are attributed to the novel 3D structure and abundantly exposed atomically thin edges, which facilitate charge transfer between 3D-Gr and probe molecules. We believe that the 3D-Gr/Si heterojunction SERS substrates offer potential for practical applications in biochemical molecule detection and provide insight into the design of high-performance SERS substrates.

Interface Engineering of a Silicon/Graphene Heterojunction Photodetector via a Diamond-Like Carbon Interlayer

Silicon/graphene nanowalls (Si/GNWs) heterojunctions with excellent integrability and sensitivity show an increasing potential in optoelectronic devices. However, the performance is greatly limited by inferior interfacial adhesion and week electronic transport caused by the horizontal buffer layer. Herein, a diamond-like carbon (DLC) interlayer is first introduced to construct Si/DLC/GNWs heterojunctions, which can significantly change the growth behavior of the GNWs film, avoiding the formation of horizontal buffer layers. Accordingly, a robust diamond-like covalent bond with a remarkable enhancement of the interfacial adhesion is yielded, which notably improves the complementary metal oxide semiconductor compatibility for photodetector fabrication. Importantly, the DLC interlayer is verified to undergo a graphitization transition during the high-temperature growth process, which is beneficial to pave a vertical conductive path and facilitate the transport of photogenerated carriers in the visible and near-infrared regions. As a result, the Si/DLC/GNWs heterojunction detectors can simultaneously exhibit improved photoresponsivity and response speed, compared with the counterparts without DLC interlayers. The introduction of the DLC interlayer might provide a universal strategy to construct hybrid interfaces with high performance in next-generation optoelectronic devices.

Lateral monolayer MoS2 homojunction devices prepared by nitrogen plasma doping

Monolayer MoS₂ possesses good electron mobility, structural flexibility and a direct band gap, enabling it to be a promising candidate for flexible and wearable optoelectronic devices. In this article, the lateral monolayer MoS₂ homojunctions were prepared by a nitrogen plasma selective doping technique. The monolayer MoS₂ thin films were synthesized by chemical vapor deposition and characterized by photoluminescence, atom force microscope and Raman spectroscopy. The electronic and photoelectric properties of the lateral pn and npn homojunctions were discussed. The results showed that the rectifying ratio of the pn homojunction diode is ∼10³. As a photodetector of pn homojunction, the optical responsivity is up to 48.5 A W^-1, the external quantum efficiency is 11 301%, the detectivity is ∼10⁹ Jones and the response time is 20 ms with the laser of 532 nm and the reverse bias voltage of 10 V. As a bipolar junction transistor of npn homojunction, the amplification coefficient reached ∼10². A controllable plasma doping technique, compatible with traditional CMOS process, is utilized to realize the monolayer MoS₂ based pn and npn homojunctions, and it propels the potential applications of 2D materials in the electronic, optoelectronic devices and circuits.

Ultrahigh Sensitivity Graphene/Nanoporous GaN Ultraviolet Photodetectors

Integration of graphene with three-dimensional semiconductors can introduce unique optical and electrical properties that overcome the intrinsic limitation of the materials. Here, we report on the high sensitivity ultraviolet (UV) photodetectors based on monolayer graphene/nanoporous GaN heterojunctions. By investigating the reflectivity, photoluminescence, and Raman spectral characteristics of nanoporous GaN, we find that the increase in the porosity can help to improve its optical properties. The device based on the highest-porosity nanoporous GaN demonstrates rapid and linear response to UV photons, with an ultrahigh detectivity of 1.0 × 10¹⁷ Jones and a UV-visible rejection ratio of 4.8 × 10⁷ at V = -1.5 V. We attribute such high sensitivity to the combination of the significantly enhanced light harvesting of high-porosity nanoporous GaN and the unique UV absorption, high mobility, and finite density of states of the monolayer graphene. The high performance together with a simple and low-cost fabrication process endow these graphene/nanoporous GaN heterojunctions with great potential for future selective detection of weak UV optical signals.